DC Characteristics of a CMOS Inverter

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DC Characteristics of a CMOS Inverter A complementary CMOS inverter consists of a p- type and an n-type device connected in series. The DC transfer characteristics of the inverter are a function of the output voltage (V out ) with respect to the input voltage (V in ). The MOS device first order Shockley equations describing the transistors in cut- off, linear and saturation modes can be used to generate the transfer characteristics of a CMOS inverter. Plotting these equations for both the n- and p-type devices produces voltage- current characteristics shown below.

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A complementary CMOS inverter consists of a p-type and an n-type device connected in series. The DC transfer characteristics of the inverter are a function of the output voltage (V out ) with respect to the input voltage (V in ). - PowerPoint PPT Presentation

Transcript of DC Characteristics of a CMOS Inverter

  • DC Characteristics of a CMOS InverterA complementary CMOS inverter consists of a p-type and an n-type device connected in series.The DC transfer characteristics of the inverter are a function of the output voltage (Vout) with respect to the input voltage (Vin).

    The MOS device first order Shockley equations describing the transistors in cut-off, linear and saturation modes can be used to generate the transfer characteristics of a CMOS inverter.Plotting these equations for both the n- and p-type devices produces voltage-current characteristics shown below.

  • IV Curves for nMOS

  • PMOS IV Curves

  • DC ResponseDC Response: Vout vs. Vin for a gateEx: InverterWhen Vin = 0 -> Vout = VDDWhen Vin = VDD -> Vout = 0In between, Vout depends ontransistor size and currentBy KCL, we thatIdsn = |Idsp|We could solve equationsBut graphical solution gives more insight

  • Transistor OperationCurrent depends on region of transistor behaviorFor what Vin and Vout are nMOS and pMOS inCutoff?Linear?Saturation?

  • nMOS Operation

    CutoffLinearSaturatedVgsn

    Vdsn

    Vdsn >

  • nMOS Operation

    CutoffLinearSaturatedVgsn < VtnVgsn > Vtn

    Vdsn < Vgsn VtnVgsn > Vtn

    Vdsn > Vgsn Vtn

  • nMOS OperationVgsn = VinVdsn = Vout

    CutoffLinearSaturatedVgsn < VtnVgsn > Vtn

    Vdsn < Vgsn VtnVgsn > Vtn

    Vdsn > Vgsn Vtn

  • nMOS OperationVgsn = VinVdsn = Vout

    CutoffLinearSaturatedVgsn < VtnVin < VtnVgsn > VtnVin > VtnVdsn < Vgsn VtnVout < Vin - VtnVgsn > VtnVin > VtnVdsn > Vgsn VtnVout > Vin - Vtn

  • pMOS Operation

    CutoffLinearSaturatedVgsp >Vgsp Vgsp Vgsp VtpVgsp < Vtp

    Vdsp < Vgsp Vtp

  • pMOS OperationVgsp = Vin - VDDVdsp = Vout - VDDVtp < 0

    CutoffLinearSaturatedVgsp > VtpVgsp < Vtp

    Vdsp > Vgsp VtpVgsp < Vtp

    Vdsp < Vgsp Vtp

  • pMOS OperationVgsp = Vin - VDDVdsp = Vout - VDDVtp < 0

    CutoffLinearSaturatedVgsp > VtpVin > VDD + VtpVgsp < VtpVin < VDD + VtpVdsp > Vgsp VtpVout > Vin - VtpVgsp < VtpVin < VDD + VtpVdsp < Vgsp VtpVout < Vin - Vtp

  • I-V CharacteristicsMake pMOS wider than nMOS such that bn = bp

  • Current vs. Vout, Vin

  • Load Line AnalysisFor a given Vin:Plot Idsn, Idsp vs. VoutVout must be where |currents| are equal.

  • Load Line AnalysisVin = 0

  • Load Line AnalysisVin = 0.2VDD

  • Load Line AnalysisVin = 0.4VDD

  • Load Line AnalysisVin = 0.6VDD

  • Load Line AnalysisVin = 0.8VDD

  • Load Line AnalysisVin = VDD

  • Load Line Summary

  • DC Transfer CurveTranscribe points onto Vin vs. Vout plot

  • Operating RegionsRevisit transistor operating regions

    RegionnMOSpMOSABCDE

  • Operating RegionsRevisit transistor operating regions

    RegionnMOSpMOSACutoffLinearBSaturationLinearCSaturationSaturationDLinearSaturationELinearCutoff

  • Beta RatioIf bp / bn 1, switching point will move from VDD/2Called skewed gateOther gates: collapse into equivalent inverter

  • DC Characteristics of a CMOS InveterThe DC transfer characteristic curve is determined by plotting the common points of Vgs intersection after taking the absolute value of the p-device IV curves, reflecting them about the x-axis and superimposing them on the n-device IV curves.We basically solve for Vin(n-type) = Vin(p-type) and Ids(n-type)=Ids(p-type)The desired switching point must be designed to be 50 % of magnitude of the supply voltage i.e. VDD/2.Analysis of the superimposed n-type and p-type IV curves results in five regions in which the inverter operates.Region A occurs when 0 leqVin leq Vt(n-type).The n-device is in cut-off (Idsn =0).p-device is in linear region,Idsn = 0 therefore -Idsp = 0Vdsp = Vout VDD, but Vdsp =0 leading to an output of Vout = VDD.Region B occurs when the condition Vtn leq Vin le VDD/2 is met.Here p-device is in its non-saturated region Vds neq 0.n-device is in saturationSaturation current Idsn is obtained by setting Vgs = Vin resulting in the equation:

  • CMOS Inverter DC Characteristics

  • CMOS Inverter Transfer CharacteristicsIn region B Idsp is governed by voltages Vgs and Vds described by:

    Region C has that both n- and p-devices are in saturation.Saturation currents for the two devices are:Region D is defined by the inequality

    p-device is in saturation while n-device is in its non-saturation region.

    Equating the drain currents allows us to solve for Vout. (See supplemental notes for algebraic manipulations).

  • CMOS Inverter Static CharateristicsIn Region E the input condition satisfies:

    The p-type device is in cut-off: Idsp=0The n-type device is in linear modeVgsp = Vin VDD and this is a more positive value compared to Vtp.Vout = 0nMOS & pMOS Operating pointsACBDEVtpVtnVDD0VDD/2VDD+VtpVDDBoth in satnMOS in satpMOS in satOutput VoltageVout =Vin-VtpVout =Vin-Vtn