ADVANCED VLSI CHAP3-4

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    Modern VLSI Design 4e: Chapter 3 Copyright 2008 Wayne Wolf

    Topics

    n Pseudo-nMOS gates.

    n DCVS logic.

    n Domino gates.

    n Design-for-yield.

    n

    Gates as IP.

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    Modern VLSI Design 4e: Chapter 3 Copyright 2008 Wayne Wolf

    Pseudo-nMOS

    n Uses a p-type as a resistive pullup, n-type

    network for pulldowns.

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    Characteristics

    n Consumes static power.

    n Has much smaller pullup network than

    static gate.

    n Pulldown time is longer because pullup is

    fighting.

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    Output voltages

    n Logic 1 output is always at VDD.

    n Logic 0 output is above Vss.

    n VOL = 0.25 (VDD - VSS) is one plausible

    choice.

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    Producing output voltages

    n For logic 0 output, pullup and pulldown

    form a voltage divider.

    n Must choose n, p transistor sizes to create

    effective resistances of the required ratio.

    n Effective resistance of pulldown network

    must be comptued in worst caseseries n-types means larger transistors.

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    Transistor ratio calculation

    n In steady state logic 0 output:

    pullup is in linear region,Vds = Vout - (VDD -

    VSS) ;

    pulldown is in saturation.

    n Pullup and pulldown have same current

    flowing through them.

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    Transistor ratio, contd.

    n Equate two currents:

    Idp = Idd.

    n Using 0.5 mm parameters, 3.3V power

    supply:

    Wp/Lp / Wn/Ln = 3.9.

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    DCVS logic

    n DCVSL = differential cascode voltage

    logic.

    n Static logicconsumes no dynamic power.

    n Uses latch to compute output quickly.

    n Requires true/complement inputs, produces

    true/complement outputs.

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    DCVS structure

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    DCVS operation

    n Exactly one of true/complement pulldown

    networks will complete a path to the power

    supply.

    n Pulldown network will lower output

    voltage, turning on other p-type, which also

    turns off p-type for node which is goingdown.

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    DCVS example

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    Precharged logic

    n Precharged logic uses stored charge to help

    evaluation.

    n Precharge node, selectively discharge it.

    n Take advantage of higher speed of n-types.

    n Requires multiple phases for evaluation.

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    Modern VLSI Design 4e: Chapter 3 Copyright 2008 Wayne Wolf

    Domino logic

    n Uses precharge clock to compute output in

    two phases:

    precharge;

    evaluate.

    n Is not a complete logic familycannot

    invert.

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    Domino gate structure

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    Domino phases

    n Controlled by clock.

    n Precharge:p-type pullup precharges the

    storage node; inverter ensures that outputgoes low.

    n Evaluate: storage node may be pulled down,

    so output goes up.

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    Domino buffer

    n Output inverter is needed for two reasons:

    make sure that outputs start low, go high so that

    domino output can be connected to anotherdomino gate;

    protects storage node from outside influence.

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    Domino operation

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    Domino effect

    Gate outputs fall in sequence:

    gate 1 gate 2 gate 3

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    Monotonicity

    n Domino gates inputs must be monotonically

    increasing: glitch causes storage node to

    discharge.

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    Output buffer

    n Inverting buffer isolates storage node.

    Storage node and inverter have correlated

    values.

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    Using domino logic

    n Can rewrite logic expression using De

    Morgans Laws:

    (a + b) = ab

    (ab) = a + b

    n Add inverters to network inputs/outputs as

    required.

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    Design-for-yield

    n Design processes that improve chip yield in

    very deep submicron/nanometer

    technologies.n Must treat design and manufacturing as a

    unified processing to maximize yield in

    nanometer technologies.

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    Variations in manufacturing

    n Three types of variations:

    Systematic variations can be predicted based on

    design and mask information plusmanufacturing equipment.

    Random variations include variations in

    parameters, etc.

    Environmental variations include temperature,

    etc.

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    Trends in manufacturing

    n Larger variations in process and circuit

    parameters.

    n Higher leakage currents.

    n Patterning problems caused by specific

    combinations of geometric features.

    n Metal width and thickness variations.

    n Stress in vias.

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    Gates as IP

    n The standard cell library was one of the first

    forms of IP.

    Reusable across many chips.

    Portable from one process to another.

    n Standard cell compatibility issues:

    Layout: cell size, pin placement.

    Delay: driving specified load.

    Power consumption.

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    Standard cell physical design

    n Basic cell organization is dictated by

    placement and routing system.

    n All cells are the same height.

    May be one of a set of standard widths.

    n Pins must be placed on routing grid, usually

    determined by wiriing layers used.

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    Standard cell logical design

    n Must support a Boolean complete set of

    functions.

    n Should support enough gate types for goodlogic synthesis results.

    n Need several electrical variations of each

    function:Low power.

    High speed.

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    Cell verification and qualification

    n Cells are verified by layout extraction and

    circuit simulation.

    Simulate a variety of process parametercombinations.

    n Qualification requires fabrication of cells on

    the target process.