2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

TIP100/101/102

NPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted

Electrical Characteristics TC=25C unless otherwise noted

Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP100

: TIP101 : TIP102

60 80100

VVV

VCEO Collector-Emitter Voltage : TIP100 : TIP101 : TIP102

60 80100

VVV

VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 15 A IB Base Current (DC) 1 A PC Collector Dissipation (Ta=25C) 2 W

Collector Dissipation (TC=25C) 80 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C

Symbol Parameter Test Condition Min. Max. Units VCEO(sus) Collector-Emitter Sustaining Voltage

: TIP100: TIP101: TIP102

IC = 30mA, IB = 0 60 80 100

VVV

ICEO Collector Cut-off Current: TIP100: TIP101: TIP102

VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0

50 50 50

AAA

ICBO Collector Cut-off Current: TIP100: TIP101: TIP102

VCE = 60V, IE = 0 VCE = 80V, IE = 0 VCE = 100V, IE = 0

50 50 50

AAA

IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA

hFE DC Current Gain VCE = 4V, IC = 3A VCE = 4V, IC = 8A

1000 200

20000

VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 6mA IC = 8A, IB = 80mA

2 2.5

VV

VBE(on) Base-Emitter ON Voltage VCE = 4V, IC = 8A 2.8 V Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz 200 pF

TIP100/101/102

Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP105/106/107

R1 10kR2 0.6k

Equivalent Circuit

B

E

C

R1 R2

1.Base 2.Collector 3.Emitter

1 TO-220

2001 Fairchild Semiconductor Corporation

TIP100/101/102

Rev. A1, June 2001

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

Figure 5. Safe Operating Area Figure 6. Power Derating

0 1 2 3 4 50

1

2

3

4

5

0.8mA0.9mA

IB = 1mA 700uA

600uA500uA

400uA

IB = 300 uA

IB = 200 uA

IB = 100 uA

I C[A

], C

OLL

ECTO

R C

UR

REN

T

VCE[V], COLLECTOR-EMITTER VOLTAGE

0.1 1 10100

1k

10k

VCE = 4V

h FE,

DC

CU

RR

ENT

GAI

N

Ic[A], COLLECTOR CURRENT

0.1 1 10 100100

1k

10k

Ic = 500 IB

VCE(sat)

VBE(sat)

V BE(

sat),

VC

E(sa

t)[V]

, SAT

UR

ATIO

N V

OLT

AGE

IC[A], COLLECTOR CURRENT

0.1 1 10 1001

10

100

1k

10k

C

ob[p

F], C

APA

CIT

ANC

E

VCB[V], COLLECTOR-BASE VOLTAGE

0.1 1 10 1000.01

0.1

1

10

100

TIP102

TIP101

5ms

100s

1ms

DC

TIP100

I C[A

], C

OLL

ECTO

R C

UR

REN

T

VCE[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 1750

20

40

60

80

100

120

P C[W

], PO

WER

DIS

SIPA

TIO

N

TC[oC], CASE TEMPERATURE

Package Demensions

2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

TIP100/101/102

Dimensions in Millimeters

4.50 0.209.90 0.20

1.52 0.10

0.80 0.102.40 0.20

10.00 0.20

1.27 0.10

3.60 0.10

(8.70)

2.80

0.

1015

.90 0

.20

10.0

8 0

.30

18.9

5MAX

.

(1.70

)

(3.70

)(3.

00)

(1.46

)(1.

00)

(45)

9.20

0.

2013

.08 0

.20

1.30

0.

10

1.30 +0.100.05

0.50 +0.100.05

2.54TYP[2.54 0.20]

2.54TYP[2.54 0.20]

TO-220

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.As used herein:

2001 Fairchild Semiconductor Corporation Rev. H3

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is notintended to be an exhaustive list of all such trademarks.

1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.

2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

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