Of the High Performance Gallium Arsenide ( GaAs ) Nanowires ( NWs )
Transcript of Of the High Performance Gallium Arsenide ( GaAs ) Nanowires ( NWs )
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CITY UNIVERSITY OF HONG KONG
DEPARTMENT OF
PHYSICS AND MATERIALS SCIENCEBACHELOR OF ENGINEERING (HONS) IN MATERIALS ENGINEERING
2011-2012
DISSERTATION
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CHEUNG SIU O
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BACHELOR OF ENGINEERING (HONS)
IN
MATERIALS ENGINEERING
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C#ty Un#4!'"#ty * Hn+ Kn+
M$'& 2012
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CHEUNG SIU O
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T$.! * Cnt!nt"
Table of Contents...........................................................................................................i
2.1 Introduction of GaAs.................................................................12.2 GaAs Nanowires (GaAs NWs)....................................................2
2.3 The growth mechanism of the fabrication of GaAs NWs...........3
2.3.1 Vaor!so"id!so"id (V##) mechanism.....................................3
2.3.2 Vaor!"i$uid!so"id (V%#) growth...........................................&
2.& The rocess arameters...........................................................'
2.&.1 The use of cata"st for GaAs NWs.......................................'
2.&.2 The substrate temerature.................................................
2.&.3 The source temerature.....................................................*2.&.& The recursor ratio+ Growth time and carriers gas ............*
2.' ,haracteri-ation of the GaAs NWs............................................
2.'.1 The diameter distribution of GaAs NWs............................../
2.&.1 The e"ectrica" erformance of NWs fie"d effect transistors
(NW 0T)....................................................................................1
2.'.2 The re"ation between the I# 4 VG# and I# 4 VG# of 0T
for GaAs NWs.............................................................................11
2.. Nanowires a"ication5 the NWs so"ar ce"".............................12
&.1 The sam"e rearation5.........................................................1*
&.3 The so"ar ce"" de6ice fabrication5............................................1/
&.&.1 "ectrica" and 7hoto6o"taic (7V) measurement.................21
5. Results and Discussion...........................................................................................21
'.1 #tructura" characteri-ation.....................................................22
'.3 The e"ectrica" measurement of the GaAs NWs so"ar ce"".........2*
6. Conclusion ..............................................................................................................32
7. References...............................................................................................................33
[35] Mller, C. M. !"olena#, R. Microstructure e$olution durin% de&ettin% in
t'in (u fil)s, (cta Mater. 2*1*, 5+, 6*356*-5......................................................35
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/i%ure 5.T'e %eneral &or#in% "rinci"le of ;'ili"s
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t#" ".$' &!.. #t $#,.$' "t'/&t/'!7 It #" $%4#"$.! *' t! #n4!"t#+$t#n n '!
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7. References
1 G/%#9"!n M S; L$/n L 8;$n+ 8; S#t D C $n% L#!!' C M 2002 G't *
N "/,!'.$tt#&! "t'/&t/'!" *' n$n"&$.! ,tn#&" $n% !.!&t'n#&" N$t/'! ?1@ 1
20
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10 C. C; S,#'9"9$ D; F'#!' M; A"t'!#t!' G $n% M''$. A F I 200 G$-
$""#"t!% &$t$.y"t-*'!! +'t !&$n#" * G$A" N" y .!&/.$' !$ !,#t$:y
Py"7 R!47 B 1@@2
11 P!'""n A I; L$'""nM ; St!n"t' S; O.""n B 8; S$/!."n L
$n%$..!n!'+ L R 200? S.#%-,$"! %#**/"#n !&$n#" *' G$A" N +'t N$t7
M$t!'7 1
12 H$n N7; $n+ F7Y7; H/# A7T7; H/ 8787; S$n G7C7; F!#
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21 K'y.y/9 S; D$4y%4 A V $n% L!4#n I 2010 T$,!'#n+ &nt'. * S# N" +'n
*' S#C.? $t '!%/&!% ,'!""/'! ACS N$n @ @?
22 #9#,!%#$ tt,6!n7#9#,!%#$7'+#9#
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Ry F/n+-2012-L!&t/'!?-N$nt!&n.+y7,%*; P$+! 1
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