Of the High Performance Gallium Arsenide ( GaAs ) Nanowires ( NWs )

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    CITY UNIVERSITY OF HONG KONG

    DEPARTMENT OF

    PHYSICS AND MATERIALS SCIENCEBACHELOR OF ENGINEERING (HONS) IN MATERIALS ENGINEERING

    2011-2012

    DISSERTATION

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    CHEUNG SIU O

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    BACHELOR OF ENGINEERING (HONS)

    IN

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    M$'& 2012

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    T$.! * Cnt!nt"

    Table of Contents...........................................................................................................i

    2.1 Introduction of GaAs.................................................................12.2 GaAs Nanowires (GaAs NWs)....................................................2

    2.3 The growth mechanism of the fabrication of GaAs NWs...........3

    2.3.1 Vaor!so"id!so"id (V##) mechanism.....................................3

    2.3.2 Vaor!"i$uid!so"id (V%#) growth...........................................&

    2.& The rocess arameters...........................................................'

    2.&.1 The use of cata"st for GaAs NWs.......................................'

    2.&.2 The substrate temerature.................................................

    2.&.3 The source temerature.....................................................*2.&.& The recursor ratio+ Growth time and carriers gas ............*

    2.' ,haracteri-ation of the GaAs NWs............................................

    2.'.1 The diameter distribution of GaAs NWs............................../

    2.&.1 The e"ectrica" erformance of NWs fie"d effect transistors

    (NW 0T)....................................................................................1

    2.'.2 The re"ation between the I# 4 VG# and I# 4 VG# of 0T

    for GaAs NWs.............................................................................11

    2.. Nanowires a"ication5 the NWs so"ar ce"".............................12

    &.1 The sam"e rearation5.........................................................1*

    &.3 The so"ar ce"" de6ice fabrication5............................................1/

    &.&.1 "ectrica" and 7hoto6o"taic (7V) measurement.................21

    5. Results and Discussion...........................................................................................21

    '.1 #tructura" characteri-ation.....................................................22

    '.3 The e"ectrica" measurement of the GaAs NWs so"ar ce"".........2*

    6. Conclusion ..............................................................................................................32

    7. References...............................................................................................................33

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    t'in (u fil)s, (cta Mater. 2*1*, 5+, 6*356*-5......................................................35

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    /i%ure 5.T'e %eneral &or#in% "rinci"le of ;'ili"s

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    7. References

    1 G/%#9"!n M S; L$/n L 8;$n+ 8; S#t D C $n% L#!!' C M 2002 G't *

    N "/,!'.$tt#&! "t'/&t/'!" *' n$n"&$.! ,tn#&" $n% !.!&t'n#&" N$t/'! ?1@ 1

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    10 C. C; S,#'9"9$ D; F'#!' M; A"t'!#t!' G $n% M''$. A F I 200 G$-

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    11 P!'""n A I; L$'""nM ; St!n"t' S; O.""n B 8; S$/!."n L

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    21 K'y.y/9 S; D$4y%4 A V $n% L!4#n I 2010 T$,!'#n+ &nt'. * S# N" +'n

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