MOST SIGNIFICANT CONTRIBUTION/ACCOMPLISHMENT: · Web viewPAT. NO. Title 1 7,122,841 Bonding pad for...

- Résumé

Jagdish (Jay) Narayan The John C. C. Fan Family Distinguished Chair Professor and Director NSF Center for Advanced Materials and Smart StructuresRoom 3030, Engineering Building I, Centennial CampusDepartment of Materials Science and EngineeringNorth Carolina State UniversityRaleigh, NC 27695-7907.Phone: (919) 515-7874; Fax: (919) 515-7642; E-mail: [email protected]

EducationPh.D. (1971) and M.S. (1970) University of California, Berkeley; B. Tech. (1969 Univ. First Rank Medalist, Highest Hons. & Dist.) I.I.T., Kanpur, India, 1997 Distinguished Alumnus Award Major field- Materials Science and Eng; Minor fields- Electrical and Computer Eng and Solid State Physics

Record of Professional Work Experience2002- The John C. C. Fan Family Distinguished Chair Professor1990- NCSU Distinguished University Professor (Materials Science and Engineering, Electrical

and Computer Engineering and Physics) and Director of Center for Advanced Materials and Smart Structures

2007- ORNL Distinguished Guest Scientist1990-92 National Science Foundation, Division of Materials Research, Director*1984- North Carolina State University, Professor1984-86 Microelectronics Center of North Carolina, Director1972-84 Oak Ridge National Lab., Senior Scientist and Leader of Thin Film and Electron

Microscopy Group1971-72 Lawrence Berkeley National Lab., Research Metallurgist*The DMR is the largest division of the NSF with over twenty Research Program Directorates and over $250M annual budget.

Specific Outstanding Technical and Professional Engineering Accomplishments and ContributionsStarting with his doctoral thesis, Narayan provided first direct evidence for the presence of vacancies and interstitials in ionic solids, and established, via rigorous in-situ diffusion experiments, the activation energy for pipe diffusion along the dislocations and grain boundaries to be half that in the bulk. This research, recognized by numerous Awards, has proven to be pivotal to our understanding of basic phenomena in metals, ceramics and electronic materials and processing. Narayan is internationally known for his seminal contributions in laser processing of novel materials including laser annealing and pulsed laser deposition, atomic-scale characterization, and atomistic modeling of dislocations and interfaces. He invented novel supersaturated semiconductor alloys formed by solid phase epitaxy, and by liquid phase crystallization where melt-quenching rates are billions of degrees per second. This research, featured twice in Science Magazine (5/4/1979 & 4/19/1991 issues), resulted in four U.S. patents and two IR-100 Awards. Narayan discovered and patented new nanocrystalline metal-ceramic composites, invented 1-2-4 (Y1Ba2Cu4O8) superconductor with Tc~80-100 K, co-originated laser ablation for thin film deposition, and patented a novel method for synthesizing thin films.The 1982 ORNL Review, Summarizing the Four Decades of ORNL Achievements, recorded three of Narayan’s achievements (relating to his three unprecedented IR-100 Awards) out of 12 totals in the field of materials science and engineering. This is truly remarkable considering the fact the materials field represents a major mission of the Laboratory in which many billions of dollars were spent over the last

0

forty years, and the fact that Narayan was associated with the ORNL only in the last decade. He established atomic structure and properties of dislocations and grain boundaries in semiconductors and high –Tc superconductors. He discovered the orientation dependence of core energy of dislocations, critical to obtaining dislocation-free silicon wafers for devices. More recently, he has pioneered and patented a new concept of domain epitaxy where an integral number of lattice constants of the film match that of the substrate in large lattice mismatched systems. The domain epitaxy is key to the formation of large-misfit thin film heterostructures, such as TiN films on silicon with 4/3 matching, and III-nitrides & ZnO films on sapphire with 6/7 matching. Narayan has invented new cubic ZnMgO alloys which can be grown epitaxially on (100)silicon substrates for integration between optoelectronic and spintronic devices. Thus, Narayan’s inventions on domain matching epitaxy and fundamental advances in defects and interfaces address a major grand challenge for next-generation solid state devices, which is related to the formation of device-quality single-crystal thin films on substrates with lattice misfit ranging from 2% to 30%. These thin-film heterostructures lead to a successful integration of device functionality ranging from digital computing and signal processing, r-f devices and optical sources, to infrared detection systems. Narayan has discovered and patented a new method of self-assembly for processing nanostructured magnetic, photonic, electronic and structural materials. This research was judged by the National Science Foundation to be a major breakthrough in 2004. His pioneering research on synthesis and modeling of nanocrystalline metals, ceramics, and composites has established a solid foundation and clarified long-standing controversies related to their structure-property correlations. One of his ideas related to quantum confinement by thickness variation (creating Nano Pocket@) is being used by Kopin Corp. to manufacture high-efficiency light emitting diodes for solid state lighting. He recently delivered The Edward DeMille Campbell memorial lecture entitled, “New Frontiers in Thin Film Growth and Nanomaterials,” at the Annual ASM International Meeting (October 17-20, 2004) in Columbus, Ohio.

Impact of Work

Profound impact on thin film epitaxy across the misfit scale, defects and interfaces, laser processing, semiconductor doping and novel materials processing which led to a record three IR-100 Awards for new materials and technologies. Narayan holds twenty five patents on domain matching epitaxy, defect reduction in thin film heterostructures, new materials, and processing of semiconductor devices. He holds ten patents with Kopin Corp (and Kobrite Corp), which are pivotal to their highly successful CYBER display, solid state lighting and device business. The Kopin Corp, MIT spin-off and Massachusetts based multinational Corp, has licensed patents related to domain epitaxy and new cubic ZnMgO and ZnCdO alloys from NCSU to manufacture III-nitride and II-oxide based light emitting diodes and lasers covering the entire range of the visible spectrum. Using DME and 3-D thin-film growth concepts (Volmer-Weber growth), Narayan invented 3-D self-assembled nanostructures with oriented nanodots (US Patent # 7,105,118, Sept 12, 2006), which NSF hailed as one of the breakthroughs of the year (2004).

Landmark Publications

Properties of Vacancies and Interstitials in MgO – Scripta Met 6, 259 (1972) and Phil Mag. 26, 1179 (1972); J. Appl. Phys 43, 4862(1972); Acta Met 21, 533(1973).

Laser Annealing of Ion Implanted Semiconductors – Appl. Phys. Lett. 32, 139 (1978) Citation Classic, and (Invited) Science 204, 461 (1979) Citation Classic; Pulsed Laser Melting – Phil Mag 43, 1515 (1981) and Phys. Rev. Lett. 52, 561 (1983).

Interface Instability and Formation of Supersaturated Semiconductor Alloys – J. Appl. Phys. 52, 1289 (1981) and Appl. Phys. Lett. 41, 239 (1982).

1

Pulsed Laser Deposition and Processing of Thin Films – Appl. Phys. Lett. 51, 1845 (1987) and Physical Review B41, 8843 (1990) Citation Classic, and Science 252, 416 (1991) and (Invited) International Materials Reviews 42, 137 (1997).

Atomic Structure of Dislocations and Grain Boundaries – Phil. Mag. A71, 537 (1995); Phil Mag. A72, 297 (1995) and Phil Mag. A73, 767 (1996); J. Appl. Phys.92, 7122(2002).

Domain Epitaxy and Thin Films – Appl. Phys. Lett. 61, 1290 (1992); J. Appl. Phys. 84, 2597 (1998); J. Appl Phys. (Invited Review) 87, 965 (2000); J. Appl. Phys.93,278(2003) and Met and Mat Trans 36, 5 (2005)- Edward DeMille Campbell Lecture.

Novel Nanocrystalline Materials – Phys. Rev. Lett. 46, 1491 (1981); Phil Mag A 49,287(1984); Phil Mag 49, 475(1984); US Patent 4,376,755(1984); Appl. Phys. Lett. 76, 43 (2000); J. Nanoparticle Research 2, 91(2000);4,265(2002); Acta materialia 50, 3527 (2002); Acta Materialia 50, 5067(2002); Acta Materialia 50, 3995(2002); Acta Materialia 50, 4823(2002); J. Nanoscience and Nanotechnology 4, 726 (2004); J. Appl. Phys. 89, 132502 (12006); J. Appl Phys 100, 034309 (2006).

III-nitride and II-oxide Based Materials- Appl. Phys Lett 67, 1549(1995); J. Appl Phys. 84,2597(1998); Appl Phys. Lett. 74, 2465(1999); J. Appl Phys, 85, 7884(1999); Solid State Comm 121, 9(2002); Appl. Phys Lett 81,841(2002); Sold State Comm 121, 371(2002); Appl. Phys Lett 81, 3978(2002).

Perovskite Based Materials- J. Appl. Phys. 80,6720(1996); Appl. Phys Lett 71, 1709(1997); Appl. Phys Lett 76, 1458(2000); Appl. Phys Lett 80,4039(2002); Solid State Comm 121, 357(2002) and 121 357(2002); appl Phys Lett 80,1337(2002).

Diluted Magnetic Semiconductors- Solid State Comm 121, 371 (2002); Appl. Phys Lett 88, 142503 (2006); J. Elect Mat 35, 852 (2006); Appl. Phys Lett 88, 142511 (2006); Applied Phys Lett 84, 5255(2004); Appl Phys Lett 87, 172502 (2005).

Smart Materials and Transparent Conducting Oxides- J. Appl. Phys 100, 103524 (2006); J. Appl. Phys 100, 123 102 (2006); J. Appl Phys 100, 093519 (2006); J. Appl Phys 100, 033713 (2006); Appl Phys Lett 88, 032106 (2006); J. Appl Phys 97, 083539 (2005).

Principal Technical Society Membership and Activities

Life Member and Fellow TMS (The Materials Society) and National Academy of Sciences, India – both limited to 100 members; Life Member and Fellow of APS; Fellow of ASM International; Fellow of AAAS; Materials Research Society Governing Board Councillor (1984-87); MRS Fall Meeting Co-chair (1984), MRS Long-Range Planning (1987-89); Executive council-Electronic, Magnetic and Photonic Materials Division of TMS; DOE-National Labs. and NSF-major facilities reviewer; TMS Awards Chair-EMPMD; Board member Kopin (Highly Successful Advanced Materials and Display Devices Co.); Consultants at H. C. Starck, Inc., Advanced Ceramics, Lockheed Martin, Honeywell and Spire Corp.; Director – Division of Materials Research, NSF (1990-92); NSF Representative to NRC Committees; NSF Chair for the Presidential Materials (AMPP) Initiative; Member – University of Alabama Advisory Committee; Member – Visiting Committee (School of Materials Science and Engineering) Georgia Tech.; TMS Bruce Chalmers Award Committee Member and Chair (2000-03); Army Research Office (ARO) Board Member and Chairman of the Board (2002); ASM Nominating Committee Member; ASM Gold Metal Committee Member and Chair (2001-04); International Materials Reviews Committee Member: TMS John Bardeen Committee Member and Chair (2004-07).

2

Professional Awards and Recognition

2008 MRS Inaugural Fellow, 2005 TMS Symposium on NEW FONTIERS IN THIN FILM GROWTH AND NANOMATERIALS held in honor of Professor Narayan at the 134th TMS Annual Meeting in San Francisco; Journal of Electronic Materials (May 2006 Issue) Published honoring Professor Narayan; Winner of 2004 Edward DeMille Campbell Lecture and ASM Campbell Prize; 1999 ASM – International Gold Metal (Highest ASM Honor); Life Member and Fellow TMS elected 1999 (Highest TMS Honor); Honorary Membership MRS-India (Highest Honor) Elected in 2000; ASM Best-in-Class Award (1971); DOE (Div. of Materials Sciences) Award for Outstanding Research (1981); IR-100 Award (1979) for Laser Diffused p-n Junctions and Devices; IR-100 Award (1981) for Novel Supersaturated Semiconductor Alloys; IR-100 Award (1982) for New Nanocrystalline Metal-Ceramic Composites; 1992 NSF Distinguished Service Award; 1997 IIT/K Distinguished Alumnus Award; NCSU – Distinguished University Research Professorship (1990- ); Fellow and Life Member (APS, NAS – limited to 100 members); Fellow (ASM, AAAS); 2001ASM-International Best Paper Award; EMSA – Best Paper Award (1994); One of the most cited authors for Journal articles published 1980 through 1997 (Max-Planck Citation Index), Web of Science: over 10,700 Citations, hi-index 49, Citation Classics 17.

Research and Training of Students

Professor Narayan directs the prestigious NSF Center for Advanced Materials and Smart Structures with a total ($1.2M annual funding to NCSU and NC A&T). The Center was funded initially in 1998 for five years and has recently been renewed for the next five years. He also has ONR, NSF-NIRT and ARO funded Center for Nanostructured Materials with $275K/yr. In addition, he has had over $8.0M funding for his cutting-edge research in advanced materials and devices since 1984. He has published over 1,000 papers in archival journals, edited 9 books and received 25 patents. Three of these patents led to unprecedented 3 IR-100 Awards for three new technologies. In 2004-5, Professor Narayan has published over forty Journal and reviewed conference proceedings papers. Narayan has graduated over 60 Ph.D. students and trained 25 Postdocs who are employed in leading companies such as IBM, INTEL, Motorola, Texas Instruments, AMD; National Labs., and universities. Fourteen of them are in tenured and tenure-track faculty positions, six of these students received NSF-NYI/CAREER Award, One Presidential Early CAREER (PECASE) Award, five MRS-Best Graduate Student Medal, one TMS Hardy Gold Medal, three TMS Young Scientist Award, one IBM Faculty Awards, EMSA and ASM Best Paper Awards, etc. In 2005-6, he graduated five PhD students, two joined INTEL; one Applied Materials; one Texas A&M faculty; and one Post doctoral fellow at Los Alamos National Lab.

Teaching Accomplishments

Since his tenure at NCSU in 1984, Professor Narayan has developed a total of seven courses:

1. MAT 702 – Defects and Mass Transport in Solids2. MAT 760 – Materials Science and Processing of Semiconductor Devices3. MAT 770 – Defects, Diffusion and Ion Implantation in Semiconductors4-5. MAT 791 A & B – Advanced Materials and Smart Structures I & II6-7. MAT 791 J & K – Advanced Materials Processing I & II

Developed seven graduate level courses, two of them are taught on Distance-Education Network. These courses MAT-760 (Materials Science and Processing of Semiconductor Devices) and MAT -770 (Defects, Diffusion and ion Implantation in Semiconductors) are very popular among NCSU students and practicing engineers in microelectronics and photonics industry such as IBM, INTEL, Motorola, AMD, to update their skills and finish the M.S. degrees. Narayan pioneered Distance-Education teaching in North Carolina, starting with his first course in 1985. The GA/Office of the President has provided a special grant as apart of the UNC

3

E-learning Initiative to incorporate these courses into a special degree program in Photonics and Microelectronics. Narayan has the GA grant to develop MS in Nanoengineering which will be offered via Engineering Online nationally and internationally.

MOST SIGNIFICANT CONTRIBUTION/ACCOMPLISHMENT:

Laser Processing of Advanced Materials (1) Published FIRST papers in laser annealing of Ion Implanted semiconductors showing a complete

removal of displacement damage and electrical activation dopants (U.S. Patent, IR-100 Award and DOE Award).(I) "Laser Annealing of Boron Implanted Silicon" by R.T. Young, C.W. White, G.J. Clark, J.

Narayan, W.H. Christie, M. Murakami, P.W. King, and S.D. Kramer, Appl. Phys. Lett. 32, 139 (1978).

(II) "A comparative study of Laser and Thermal Annealing of Boron Implanted Silicon", J. Narayan, R.T. Young, and C.W. White, J. Appl. Phys. 49, 3912 (1978).

(III) "Laser Annealing of Diffusion Induced Imperfections in Silicon", R.T. Young and J. Narayan, Appl. Phys. Lett. 33, 14 (1978).

(IV) "Laser Annealing of Ion Implanted Semiconductors", C.W. White, J. Narayan and R.T. Young, Invited Article in Science 204, 461 (1979).

(2) Confirmation of the Melting model by annealing of microstructural defects and precipitates and growth of dislocations.

(I) "Depth of Melting by Pulsed Laser Irradiation", J. Narayan, Appl. Phys. Lett. 34, 312 (1979).(II) "Growth of Dislocations During Laser Melting and Solidification", J. Narayan and F.W. Young,

Jr., Appl. Phys. Lett. 35, 330 (1979).(III) "Melting Phenomenon and Properties of Defects associated with Pulsed Laser Irradiation", J.

Narayan and C.W. White, Phil. Mag. 43, 1515 (1981).(IV) "Pulsed Laser Melting of Amorphous Silicon: Time-resolved Measurements and Model

Calculations", D.H. Lowndes, R.F. Wood and J. Narayan, Phys. Rev. Lett. 52, 561 (1983).(3) Novel method for forming p-n junction by dopant deposition followed by laser melting and

solidification (U.S. Patent + IR-100 Award)."P-n Junction Formation in Boron Deposited Silicon by laser-Induced Diffusion", J. Narayan, R.T. Young, R.F. Wood and W.H. Christie, Appl. Phys. Lett. 33, 338 (1978).

(4) Invented a novel method for forming ohmic contacts on wide-band-gap semiconductors based laser melting and interfacial reaction (U.S. Patent)."Formation of Ohmic Contacts in Semiconducting Oxides", J. Narayan and V.N. Shukla, Appl. Phys. Lett. 51, 3444 (1980).

(5) Formation of Supersaturated semiconductor alloys by laser melting and solid-phase-epitaxial growth of dopant implanted layers and rapid quenching (U.S. Patent + IR-100 Award)(I) "Formation of Metastable Supersaturated Solid Solutions...", J. Narayan and O.W. Holland, Appl.

Phys. Lett. 41, 239 (1982).(II) "Interface Instability and Cell Formation in Ion Implanted and Laser Annealed Silicon", J.

Narayan, J. Appl. Phys. 52, 1289 (1981). (III) "Solid-phase-epitaxial growth and formation of metastable alloys in ion implanted silicon", J.

Narayan, O.W. Holland and B.R. Appleton, J. Vac. Sc. Tech. B1, 871 (1983). (6) Transition to flame annealing or rapid thermal annealing of semiconductors —> Published first papers

in this area immense technological significance.(I) "Flame Annealing of Arsenic- and Boron-Implanted Silicon", J. Narayan and R.T. Young, Appl.

Phys. Lett. 42, 466 (1983).(II) "Rapid Thermal Annealing of Arsenic- and Boron-Implanted Silicon", J. Narayan et al., Appl.

Phys. Lett. 43, 957 (1983).

4

(7) Transition to Laser Surface Modification of Ceramics.(I) "Ion Beam and Laser Mixing of Nickel Overlayers on Silicon Carbide", J. Narayan et al., Appl.

Phys. Lett. 56, 1577 (1984).(II) "Laser Surface Modification of Metal-coated Ceramics", R.K. Singh, K. Jagannadham, and J.

Narayan, J. Mater. Res. 3, 1119 (1988).(III) "Mechanisms of Improvement of Fracture Strength in Laser-Surface-Modified Ceramics", K.

Jagannadham and J. Narayan, J. Am. Ceram. Soc. 72, 1185 (1989).(8) Transition to Laser Evaporation - Pulsed Laser Deposition of Thin Films (2U.S. Patents)

Published first experimental (concurrently with Bell Core Group) and theoretical papers on pulsed laser deposition of thin films and obtained record critical current density (5.0x106A cm-2 at 77K) value in PLD high Tc films.(I) "Formation of Thin Films by a Laser Processing Method", J. Narayan et al., Appl. Phys. Lett. 51,

1845 (1987).(II) "In-situ Processing of Epitaxial Y-Ba-Cu-O Thin Films" by R.K. Singh, J. Narayan, Appl. Phys.

Lett. 54, 2271 (1989).(III) "A Novel Method for Simulating Laser-solid Interactions in Semiconductors and Layers

structures", R.K. Singh and J. Narayan, Mat. Sc. and Eng. B3, 217 (1989).(IV) "Theoretical Model for Deposition of Superconducting Thin Films using Pulsed Laser

Evaporation Technique", R.K. Singh, O.W. Holland and J. Narayan, J. Appl. Phys. 68, 233 (1990).

(V) "Pulsed Laser Evaporation Technique for Deposition of Thin Films", R.K. Singh and J. Narayan, Phys. Rev. B41, 8843 (1990).

(9) Invented Domain Epitaxy where integral multiples of lattice constants or major planes match across the film-substrate interface, e.g., TiN/Si, Cu/TiN/Si, Ysz/Y123 (J. Narayan, U.S. Patent 5,406,123, 4/11/1995)(I) "Epitaxial Growth of TiN Films on (100) Silicon Substrates by Laser Physical Vapor

Deposition", J. Narayan, P. Tiwari, X. Chen, J. Singh, R. Chowdhury, and T. Zheleva, Appl. Phys. Lett. 61, 1290 (1992).

(II) "Epitaxial Growth in Large-Lattice-Mismatch Systems", T. Zheleva, K. Jagannadham and J. Narayan, J. Appl. Phys. 75, 860 (1994).

(III) "Pulsed Laser Deposition of Epitaxial Si/TiN/Si(100) Heterostructures", R. Chowdhury, X. Chen and J. Narayan, Appl. Phys. Lett. 64 (10), 1236 (1994).

(IV) "Pulsed Laser Deposition and Characterization of Epitaxial Cu/TiN/Si(100) Heterostructures", R. Chowdhury, X. Chen, P. Tiwari and J. Narayan, Appl. Phys. Lett. 65, 2565 (1994).

(V) “ Domain Matching Epitaxy- a Unified Paradigm for Thin Film Growth,” J. Narayan and B.C. Larson, J. Appl. Phys. 93, 278(2003).

(10) Domain Matching Epitaxy for the Growth of III-nitrides, II-oxides and Perovskite based materials on sapphire and silicon(I) “Epitaxial Growth of AlN on Si(111),” R. D. Vispute, J. Narayan, H. Wu, J. Appl. Phys. 77, 4724(1995).(II) “ High-Quality Epitaxial AlN on Sapphire (0001),” R. D. Vispute, H. Wu, J. Narayan, Appl. Phys. Lett. 67, 1549(1995).(III) “Defects and Interfaces in ZnO/Sapphire and AlN/ZnO/Sapphire Heterostructures,” J. Narayan , J. Appl. Phys. 84, 2597(1998).(IV) “ Novel Cubic ZnMgO Epitaxial Heterostructures on Si(100),” J. Narayan et. Al. Solid State Comm 121, 9(2002).(V) “ Formation of Epitaxial Au/Ni/Au Ohmic Contacts,” J. Narayan et al. Appl. Phys. Lett. 81, 3978(2002).

5

(VI) “ Strain-induced tuning of metal-insulator transition in NdNiO3,” A. Tiwari, C. Jin, J, Narayan, Appl. Phys. Lett. 80, 4039(2002).

(VII) “ Growth of Epitaxial NdNiO3 and Integration with Si(100),” A. Tiwari, C. Jin, J. Narayan, Appl. Phys. Lett. 80, 1337(2002).

(VIII) “Characteristics of nucleation layer and epitaxy in GaN/sapphire heterostructures,” J. Narayan, P. Pant, A. Chugh, H. Choi, and J. C. C. Fan, J. Appl. Phys. 99, 054313 (2006).

(11) Fundamentals of Defects and Interfaces in Thin Film Heterostructures(I) “ Misfit Dislocations in Ge/Si Heterostructures,” S. Oktyabrsky, H. Wu, J. Narayan, Phil Mag. 71,537(1995).(II) “ New Mechanism of Formation of Stacking Faults in Ge/Si Heterostructures,” S. Oktyabrsky and J. Narayan, Phil. Mag. 72, 305 (1995).(III) “ Role of Surface Steps in Misfit Dislocation Nucleation and Critical Thickness Determination,” M. Ichimura and J. Narayan, Mat Sci and Eng B 31, 299(1995).(IV) “Atomic Study of Dislocation Nucleation in Ge/Si Heterostructures,” M. Ichimura and J. Narayan, Phil. Mag. 72,281(1995).(V) “ Negative Step Surface Energy Change and Misfit Dislocations in Semiconductor Heterostructures,” M. Ichimura and J. Narayan, Phil. Mag. 72, 297(1995).(VI) “ Formation of Misfit Dislocations in Thin Film Heterostructures,” J. Narayan and S. Oktyabrsky, J. Appl. Phys. 92,7122(2002).(VII) “Z-Contrast Imaging of Dislocation Cores at GaAs/Si Interface,” S. Lopatin, S. Pennycook, J. Narayan, Appl. Phys Lett 81,2728(2002).(12) Novel Nanostructured Materials: Narayan started his pioneering research on metal-ceramic nanocomposites in 1981(I) “Nickel Colloids in MgO,” J. Narayan, Y. Chen, and R. M. Moon, Phys. Rev. Lett 46, 1491(1981); Phil. Mag. A 49,287(1984); Phil Mag. A49, 475(1984); US Patent # 4,376 755(March 15,1983).(II) “ Size and Interface Control of novel Nanocrystalline Materials,” J. Narayan, J. Nanoparticle Res. 91, 7(2000).(III) “ Structure and Properties of Nanocrystalline Zinc Films,” J. Narayan et al, J. Nanoparticle Res. 4,265(2002).(IV) “ Mechanism of Grain Size Softening in Nanocrystalline Zn,” H. Conrad and J. Narayan, Appl. Phys Lett. 81,2241(2002).(V)“ Studies of Deformation Mechanisms in Ultra-fine-grained and Nanostructured Zn,” X. Zhang..and J. Narayan, Acta Mater 50, 4823(2002).(VI) “ Effect of Thickness Variation in High-efficiency InGaN/GaN LEDs,” J. Nrayan et al. Appl. Phys. Lett 81, 841(2002).(VII) “ Role of Self-assembled Gold Nanodots on Electrical and Optical Properties of ZnO,” A. Tiwari.. and J. Narayan, J. Nanoscience and Nanotechnology 3, 368(2003).

PATENTS of Professor Narayan (from USPTO Website)

PAT. NO. Title

1 7,122,841 Bonding pad for gallium nitride-based light-emitting devices 2 7,105,118 Methods of forming three-dimensional nanodot arrays in a matrix 3 6,955,985 Domain epitaxy for thin film growth 4 6,881,983 Efficient light emitting diodes and lasers 5 6,847,052 Light-emitting diode device geometry 6 6,734,091 Electrode for p-type gallium nitride-based semiconductors 7 6,518,077 Method for making optoelectronic and microelectronic devices including cubic

ZnMgO and/or CdMgO alloys

6

http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=Narayan-jagdish&OS=Narayan-jagdish&RS=Narayan-jagdish















8 6,423,983 Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys

9 5,453,153 Zone-melting recrystallization process 10 5,406,123 Single crystal titanium nitride epitaxial on silicon 11 5,221,411 Method for synthesis and processing of continuous monocrystalline diamond thin

films 12 5,208,182 Dislocation density reduction in gallium arsenide on silicon heterostructures 13 5,063,202 High transition temperature superconductors 14 5,021,119 Zone-melting recrystallization process 15 4,885,052 Zone-melting recrystallization process 16 4,863,877 Ion implantation and annealing of compound semiconductor layers 17 4,774,630 Apparatus for mounting a semiconductor chip and making electrical connections

thereto 18 4,376,755 Production of crystalline refractory metal oxides containing colloidal metal

precipitates and useful as solar-effective absorbers 19 4,261,764 Laser method for forming low-resistance ohmic contacts on semiconducting

oxides 20 4,181,538 Method for making defect-free zone by laser-annealing of doped silicon 21 4,147,563 Method for forming p-n junctions and solar-cells by laser-beam processing

PUB. APP. NO. Title

1 20090042751 Lubricant having nanoparticles and microparticles to enhance fuel efficiency, and a laser synthesis method to create dispersed nanoparticles

2 20070280848 Methods Of Forming Alpha And Beta Tantalum Films With Controlled And New Microstructures

3 20060266442 Methods of forming three-dimensional nanodot arrays in a matrix 4 20060130745 Domain epitaxy for thin film growth 5 20060016388 Domain epitaxy for thin film growth 6 20050161689 Efficient light emitting diodes and lasers 7 20050124161 Growth and integration of epitaxial gallium nitride films with silicon-based

devices 8 20040262621 Bonding pad for gallium nitride-based light-emitting devices 9 20040119064 Methods of forming three-dimensional nanodot arrays in a matrix 10 20040077135 Light-emitting diode device geometry 11 20040072381 Domain epitaxy for thin film growth 12 20040000671 Electrode for p-type gallium nitride-based semiconductors 13 20030160246 Efficient light emitting diodes and lasers 14 20030160229 Efficient light emitting diodes and lasers 15 20020084466 Optoelectronic and microelectronic devices including cubic ZnMgO and/or

CdMgO alloys

MOST SIGNIFICANT PUBLICATIONS IN ARCHIVAL JOURNALS FROM A TOTAL LIST OF OVER 560 ARCHIVAL JOURNAL PAPERS

7

http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=15&f=G&l=50&co1=AND&d=PG01&s1=Narayan-Jagdish&OS=Narayan-Jagdish&RS=Narayan-Jagdish



































































1. J. Narayan and J. Washburn, “Direct Observation of Pipe Diffusion in Magnesium Oxide,” Scripta Met. 6, 259 (1972).

2. J. Narayan and J. Washburn, “Self Climb of Dislocation Loops in Magnesium Oxide,” Phil. Mag. 26, 1179 (1972).

3. J. Narayan and J. Washburn, “Stability of Dislocation Loops Near a Free Surface,” J. Appl. Phys. 43, 4862 (1972).

4. J. Narayan and J. Washburn, “Self Diffusion in Magnesium Oxide,” Acta Met. 21, 533 (1973).5. J. Narayan, “Coexistance of Two Charge Density Waves of Different Symmetry in Transition Metal

Dichalcogenide 4Hb-TaS2,” Appl. Phys. Lett. 29, 223 (1976).6. J. Narayan and B. C. Larson, “Defect Clusters and Annealing in Self-Ion Irradiated Nickel,” J. Appl.

Phys. 48, 4536 (1977).7. Y. Chen, H. T. Tohver, J. Narayan, and M. M. Abraham, “High Temperature and Ionization-Induced

Effects in Lithium-Doped MgO Single Crystals,” Phys. Rev. B 16, 5535 (1977).8. J. Narayan and S. M. Ohr, “Residual Image Contrast of Dislocation Loops,” Phys. Stat. Sol. (a) 46, 281

(1978). 9. R. T. Young, C. W. White, G. J. Clark, J. Narayan, W. H. Christie, M. Murakami, P. W. King and S. D.

Kramer, “Laser Annealing of Boron Implanted Silicon,” Appl. Phys. Lett. 32, 139 (1978).10. J. Narayan, R. T. Young and C. W. White, “ A Comparative Study of Laser and Thermal Annealing of

Boron Implanted Silicon,” J. Appl. Phys. 49, 3912 (1978).11. R. T. Young and J. Narayan, “Laser Annealing of Diffusion-Induced Imperfection in Silicon,” Appl.

Phys. Lett. 33, 14 (1978).12. J. Narayan, M. M. Abraham, H. T. Tohver and Y. Chen, “Electron Microscope Studies on Li-doped

MgO,” Phil. Mag. A 38, 247 (1978).13. J. B. Lacy, M. M. Abraham, J. L. Boldu, Y. Chen, J. Narayan, and H. T. Tohver, “Oxidation and

Reduction of Lithium Containing Magnesium Oxide,” Phys. Rev. B18, 4136 (1978).14. J. Narayan, R. T. Young, R. F. Wood and W. H. Christie, “P-n Junction Formation in Boron-Deposited

Silicon by Laser-Induced Diffusion,” Appl. Phys. Lett. 33, 338 (1978).15. C. W. White, J. Narayan, B. R. Appleton and S. R. Wilson, “Impurity Segregation by Pulsed Laser

Irradiation,” J. Appl. Phys. 50, 2967 (1979).16. C. W. White, J. Narayan, and R. T. Young, “Laser Annealing of Ion Implanted Semiconductors,”

Invited Article for Science Magazine 204, 461 (1979).17. J. Narayan, “Depth of Melting Produced by Pulsed Laser Irradiation,” Appl. Phys. Lett. 34, 312 (1979).18. J. Narayan and F. W. Young, Jr., “Growth of Dislocations During Laser Melting and Solidification,”

Appl. Phys. Lett. 35, 330 (1979).19. R. T. Young, J. Narayan, and R. F. Wood, “Electrical and Structural Characteristics of Laser-Induced

Epitaxial Layers in Silicon,” Appl. Phys. Lett. 35, 448 (1979).20. S. M. Ohr and J. Narayan, “Electron Microscope Observation of Shear Cracks in Stainless Steel Single

Crystals,” Phil. Mag. 41, 81 (1980).21. J. Narayan, “Laser Annealing Under the Oxide Layers in Silicon,” Appl. Phys. Lett. 37, 66 (1980). 22. J. Narayan, “Laser Processing of Materials,” J. of Metals 33, 15 (1980).23. H. R. Kerchner, J. Narayan, D. K. Christen and S. T. Sekula, “Fluxoid Pinning by Small Nitride

Precipitates in Niobium,” Phys. Rev. Lett. 44, 1146 (1980).24. J. Narayan and V. N. Shukla, “Formation of Ohmic-Contacts in Semi-Conducting Oxides,” J. Appl.

Phys. 51, 3444 (1980).25. J. Narayan and C. W. White, ”Melting Phenomenon and Properties of Defects Associated with Pulsed

Laser Irradiation,” Philos. Mag. 43, 1513 (1981).26. Y. Chen, N. Dudney, J. Narayan and V. M. Orera, “Subthreshold [Li] Formation and Decoration of

Stained Regions in Crystalline MgO,” Phil. Mag. 44, 1783 (1981).27. J. Narayan, “Interface Instability and Cell Formation in Ion-Implanted and Laser Annealed Silicon,” J.

Appl. Phys. 52, 1289 (1981).

8

28. J. Narayan, Y. Chen and R. M. Moon, “Nickel Colloids in Reduced Nickel-Doped MgO,” Phys. Rev. Lett. 46, 1491 (1981).

29. J. Narayan and C. W. White, “Melting Phenomenon and Properties of Defects Associated with Pulsed Laser Irradiation,” Phil. Mag. 43, 1515 (1981).

30. B. R. Appleton, O. W. Holland, J. Narayan,, O. E. Schow, III, J. S. Williams, K. T. Short, and E. Lawson, “Characterization of Ion-Implanted Ge,” Appl. Phys. Lett. 41, 711 (1982).

31. J. Narayan, “Development of Morphological Instability and Formation of Cells in Silicon Alloys During Pulsed-Laser Irradiation,” J. Cryst. Growth 59, 583 (1982).

32. J. Narayan, “Interface Structure during Solid-Phase-Epitaxial Growth in Ion-Implanted Semiconductors and a Crystallization Model,” J. Appl. Phys. 53, 8607 (1982).

33. J. Narayan and O. W. Holland, “Formation of Metastable Supersaturated Solid Solutions in Ion-Implanted Silicon During Solid-Phase Crystallization,” Appl. Phys. Lett. 41, 239 (1982).

34. P. P. Pronko, A. K. Rai, O. W. Holland, B. R. Appleton, and J. Narayan, “The Material State of Ion-Implanted Cr in GaAs,” J. Appl. Phys. 53, 5621 (1982).

35. J. Narayan, O. W. Holland and B. R. Appleton, “Solid-Phase-Epitaxial Growth and Formation of Metastable Alloys in Ion Implanted Silicon,” J. Voc. Sci. Tech. B1, 871 (1983).

36. O. W. Holland, B. R. Appleton, and J. Narayan, “Ion Implantation Damage and Annealing in Germanium,” J. Appl. Phys. 54, 2295 (1983).

37. J. Narayan, O. W. Holland, R. E. Eby, J. J. Wortman, V. Ozguz, and G. A. Rozgonyi, “Rapid Thermal annealing of Arsenic- and Boron-Implanted Silicon,” Appl. Phys. Lett. 43, 957 (1983).

38. J. Narayan and R. T. Young, “Flame Annealing of Arsenic- and Boron-Implanted Silicon,” Appl. Phys. Lett. 42, 466 (1983).

39. D. H. Lowndes, R. F. Wood, and J. Narayan, “Pulsed Laser Melting of Amorphous silicon: Time-Resolved Measurements and Model Calculations,” Phys. Rev. Lett. 52, 561 (1984).

40. J. Narayan and C. W. White, “Pulsed-Laser Melting of Amorphous Silicon Layers,” Appl. Phys. Lett. 44, 35 (1984).

41. S. J. Pennycook, J. Narayan, and O. W. Holland, “Point Defect Trapping in Solid-Phase Epitaxially Grown silicon-Antimony Alloys,” J. Appl. Phys. 55, 837 (1984).

42. J. Narayan, Y. Chen, R. M. Moon, and R. W. Carpenter, “Characterization of Metal Precipitates in Magnesium Oxide - Part I,” Philos. Mag. A49, 287 (1984).

43. J. Narayan and Y. Chen, “Physical Properties of Oxides Containing Metal Precipitates -Part II,” Philos. Mag. A49, 475 (1984).

44. S. J. Pennycook, J. Narayan, and O. W. Holland, “Spatially Resolved Measurement of Substitutional dopant Concentrations in Semiconductors,” Appl. Phys. Lett. 44, 547 (1984).

45. R. F. Wood, D. H. Lowndes, and J. Narayan, “Bulk Nucleation and Amorphous Phase Formation in Highly Undercooled Molten silicon,” Appl. Phys. Lett. 44, 770 (1984)

46. O. W. Holland and J. Narayan, “Mechanism for Dynamic Annealing During High-flux Ion Irradiation in Si,” Appl. Phys. Lett. 44, 758 (1984).

47. J. Narayan, D. Fathy, O. S. Oen, and O. W. Holland, “Atomic Structure of Ion Implantation Damage and Process of Amorphization in Semiconductors,” J. Vac. Sci. Technol. A2, 1303 (1984).

48. J. Narayan and O. W. Holland, “Rapid Thermal Annealing of Ion-Implanted Semiconductors,” J. Apppl. Phys. 56, 2913 (1984).

49. J. Narayan, D. Fathy, O. W. Holland, B. R. Appleton, R. F. Davis and P. F. Becher, “Ion-Beam and Laser Mixing of Nickel Overlayers on Silicon Carbide,” J. Appl. Phys. 56, 1577 (1984).

50. S. J. Pennycook and J. Narayan, “Direct Imaging of Dopant Distributions in Silicon by STEM,” Appl. Phys. Lett. 45, 385 (1984).

51. J. Narayan and O. W. Holland, “Characteristics of Ion Implantation Damage and Annealing Phenomena in Semiconductors,” J. Electrochem. Soc. 131, 2651 (1984).

52. J. Narayan, C. W. White, O. W. Holland, and M. J. Aziz, “Phase Transformation and Impurity Redistribution During Pulsed Laser Irradiation of Amorphous Silicon Layers,” J. Appl. Phys. 56, 1821 (1984).

9

53. O. W. Holland, T. P. Sjoreen, D. Fathy, and J. Narayan, “The Influence of Substrate Temperature on the Formation of Buried Oxide and Surface Crystallinity During High Dose Oxygen Implantation of Si,” Appl. Phys. Lett. 45, 1081 (1984).

54. S. J. Pennycook, J. Narayan, and O. W. Holland, “Enhanced Diffusion from Interstitial Trapping solid-Phase-Epitaxial Growth of Silicon Alloys,” J. Cryst. Growth 70, 597 (1984).

55. J. Narayan, “Properties of <100> Dislocations in Magnesium Oxide,” J. Appl. Phys. 57, 2703 (1985).56. J. Narayan, O. W. Holland, W. H. Christie, and J. J. Wortman, “Rapid Thermal and Pulsed Laser

Annealing of BF2+ Implanted silicon,” J. Appl. Phys. 57, 2709 (1985).57. S. J. Pennycook, and J. Narayan, “Atom Location by Axial Electron channeling Analysis,” Phys. Rev.

Lett. 54, 1543 (1985).58. S. J. Pennycook, J. Narayan, and O. W. Holland, “Transient Enhanced Diffusion During furnace and

Rapid thermal Annealing of Ion-Implanted Silicon,” J. Electrochem. Soc. 132, 1962 (1985).59. K. Vedam, P. J. McMarr, and J. Narayan, “Spectroscopic Ellipsometry, A New Tool for Nondestructive

Depth-Profiling and Characterization of Interfaces,” Appl. Phys. Lett. 47, 339 (1985).60. K. Jagannadham and J. Narayan, “Elastic Strain Energy and Forces on Point Defects in a Two-Phase

Medium,” J. Mat. Res. 1, 193 (1986).61. J. Narayan, T. A. Stephenson, T. Boat, D. Fathy, and S. J. Pennycook, “Formation of Solicides by Rapid

Thermal Annealing over Polycrystalline Silicon,” J. Appl. Phys. 60, 631 (1986).62. N. M. Ravindrra and J. Narayan, “Optical Properties of Amorphous Silicon and Silicon Oxide,” J. Appl.

Phys. 60, 1139 (1986).63. S. J. Pennycook, R. J. Culbertson, and J. Narayan, “Formation of Stable Dopant Interstitials During Ion

Implantation of silicon,” J. Mater. Res. 1 (3) 476 (1986).64. P. J. McMarr, K. Vedam, and J. Narayan, “Spectroscopic Ellipsometry: A new tool for nondestructive

depth profiling and characterization of interfaces,” J. Appl. Phys. 59, 694 (1986).65. K. Jagannadham and J. Narayan, “Modification of Dopant Profiles due to Surface and Interface

Interactions: Applications to Semiconductor Materials,” J. Appl. Phys. 61, 987 (1987).66. N. M. Ravindrra and J. Narayan, “Optical Properties of Silicon Related Insulators,” J. Appl. Phys. 61,

2017 (1987).67. N. M. Ravindrra, J. Narayan, D. Fathy, J. K. Srivastava and E. A. Irene, “Silicon Oxidation and Si-SiO2

Interfaces of Thin Oxides,” J. Mater. Res. 2, 216 (1987).68. A. S. Nandedkar and J. Narayan, “Atomic Structure of Dislocations and Dipoles in Silicon,” Phil. Mag.

A56, 625 (1987).69. J. Narayan, Y. Chen, and K. Tsang, “Metallic Colloids in Plastically Deformed MgO:Ni Crystals,” Phil.

Mag. A55, 807 (1987).70. J. Narayan and K. Vedam, “Formation of SOI and Nondestructive Characterization Ion Implanted SOI

Layers,” Appl. Phys. Lett. 51, 343 (1987).71. J. Narayan and K. Jagannadham, “Effect of free Surface and Interface on Thermal Annealing of

Dislocation Loops in silicon,” J. Appl. Phys. 62, 1694 (1987).72. K. Jagannadham and J. Narayan, “The Elastic field Associated with a Square Loop in a Two Phase

Medium,” J. Appl. Phys. 62, 1698 (1987).73. J. Narayan et al., “Microstructure and Properties of YBa2Cu3O7-d Superconductors with Transitions at 90

and near 290K,” Appl. Phys. Lett. 51, 914 (1987).74. J. Narayan et al., “Formation of superconducting Films by a Novel Laser processing Method,” Appl.

Phys. Lett. 51, 1845 (1987).75. J. Narayan, “Microstructure and Properties of Novel high-Tc Superconductors,” J. of Metals, 41, 18

(1988).76. J. Narayan, A. R. Srivatsa, M. Peters, S. Yokota, and K. V. Ravi, “On Epitaxial Growth of Diamond

Films on (100) silicon Substrates,” Appl. Phys. Lett. 53, 1823 (1988).77. R. K. Singh, K. Jagannadham, and J. Narayan, “Laser Surface Modification of Metal Coated Ceramics,”

J. Mater. Res. 3, 1119 (1988).

10

78. R. K. Singh and J. Narayan, “A Novel Method for Simulating Laser-Solid Interactions in Semiconductors and Layered Structures,” Mat. Sci. and Engr. B3, 217 (1989).

79. J. Narayan and A. R. Srivatsa, “Mechanism of formation of <100> oriented Fivefold Crystallites in Diamond Films,” Appl. Phys. Lett. 59, 1659 (1989).

80. K. Jagannadham and J. Narayan, “Mechanisms of Improvement in Fracture Strength in Laser-Surface Modified Ceramics,” J. Amer. Cer. Soc. 72, 1185 (1989).

81. J. Krishnaswamy, A. Rengan, J. Narayan, K. Vedam and C. J. McHaurge, “Thin Film Deposition by a New Laser Ablation and Plasma hybrid Technique,” Appl. Phys. Lett. 54, 2455 (1989).

82. K. Jagannadham and J. Narayan, “Modelling of Microstructural Features in Y-Ba-Cu-O Superconductors,” Phil Mag. A59, 917 (1989).

83. A. S. Nandedkar and J. Narayan, “Atomic Structure of 60 and 90 Dislocations in Ge/Si Systems and Critical Phenomena,” Mat. Sci. and Engr. A113, 51 (1989).

84. K. Jagannadham and J. Narayan, “Self-consistent Approach for critical Thickness during Three-dimensional Epitaxial Growth,” Mat. Sci. and Engr. A113, 65 91989).

85. A. R. Srivatsa, S. Sharan, O. W. Holland, and J. Narayan, “Nature of Interfaces and Oxidation Processes in Ge+ Implanted Silicon,” J. Appl. Phys. 65, 4028 (1989).

86. S. Sharan and J. Narayan, “Critical Thickness and Strain Relief Mechanisms in Semiconductor Heterostructures, J. Appl. Phys. 66, 2376 (1989).

87. R. K. Singh, J. Narayan, A. K. Singh, and J. Krisnaswamy, “In-situ Processing High-Tc

Superconducting Y-Ba-Cu-O Thin Films,” Appl. Phys. Lett. 54, 2271 (1989).88. J. Narayan, s. Sharan, and J. C. C. Fan, “Dislocation and Interfaces in Semiconductor Heterostructures,”

J. of Metals 41, 10 (1989).89. R. K. Singh, L. Ganapathi, P. Tiwari and J. Narayan, “Effect of Processing Geometry in Oxygen

Incorporation and In-situ Formation of YBa2Cu3O7 Superconducting Thin Films by Pulsed Laser Evaporation Technique,” Appl. Phys. Lett. 55, 2351 (1989).

90. N. Biunno, J. Narayan, A. R. Srivatsa, and O. W. Holland, “Laser Deposition of Epitaxial TiN Films on (100) MgO,” Appl. Phys. Lett. 55, 405 (1989).

91. R. K. Singh and J. Narayan, Pulsed Laser Evaporation Technique for Deposition of Thin Films: physics and Theoretical Model,” Phys. Rev. B41, 8843 (1990).

92. R. K. Singh, O. W. Holland, and J. Narayan, “Theoretical Model for Deposition of Thin films Using Pulsed Laser Evaporation Technique,” J. Appl. Phys. 68, 233 (1990).

93. K. Jagannadham and J. Narayan, “Critical current Density and Atomic Structure of Grain Boundaries in High Tc Superconductors,” Phil. Mag. A61, 129 (1990).

94. R. Singh, S. Sinha, N. J. Hsu, P. Chou, R. K. Singh, and J. Narayan, “Superconducting Thin Films of Y-Ba-Cu-O Prepared by Metal-Organic Chemical Vapor Deposition,” J. Appl. Phys. 1990, Vol. 67, pp. 1562-1565.

95. R. Singh, R. P. S. Thakur, A. Kumar, P. Chou, and J. Narayan, “Role of In-Situ Rapid Isothermal Processing the Solid Phase Epitaxial Growth of II-A fluoride Films on InP,” Appl. Phys. Lett., 1990, Vol. 56, pp. 247-249, and 1990, Vol. 56, p. 1808.

96. R. Singh, R. P. S. Thakur, A. Kumar, P. Chou, and J. Narayan, “Structural Properties of Solid Phase Epitaxial Films of BaF2 on (100) InP Formed by In-Situ Rapid Isothermal Processing,” J. Appl. Phys., Vol.67, 1990, pp. 6411-6414.

97. J. Narayan, “Dislocations, twins, and grain Boundaries in CVD Diamond Thin Films,” J. Mater. Res. 15, 2414 (1990).

98. R. K. Singh and J. Narayan, “Nature of Epitaxial Growth of high-Tc Laser Deposited Y-Ba-Cu-O Films on (100) SrTiO3 Substrates,” J. Appl. Phys. 67, 3658 (1990).

99. R. K. Singh and J. Narayan, “ion Beam Analysis and Oxygen determination in High-Tc YBa2Cu3O7

superconducting Thin Films,” J. Mat. Res. 5, 1793 (1990)100. R. K. Singh, A. K. Singh, and J. Narayan, “In-Situ Patterned Laser Deposition of High Tc Y-Ba-Cu-O

superconducting Thin Films,” J. Appl. Phys. 67, 3448 (1990).

11

101. R. K. Singh, A. K. Singh, and J. Narayan, “Epitaxial Single Crystal Laser Deposition of Y-Ba-Cu-O Superconducting Thin Films on YS-ZrO2 Substrates at Low Processing Temperatures,” J. Appl. Phys. 67, 3452 (1990).

102. Ashok Kumar, L. Ganapathi, and J. Narayan, “In-Situ Processing of Textured Thin Films of 110K in Bi(-Pb)-Ca-Sr-Cu-O by Excimer Laser Ablation,” Appl. Phys. Lett. 56, 2034 (1990).

103. N. V. Nguyen, K. Vedam and J. Narayan, “Characterization of the Interface Between Ge+ Implanted Crystalline silicon and Thermally Grown Oxide by Spectroscopic Ellipsometry,” J. Appl. Phys. 67, 599 (1990).

104. R. K. Singh, D. Bhattacharya and J. Narayan, “Sub-Surface Heating Effects During Pulsed Laser Evaporation of Materials,” Appl. Phys. Lett. 57, 2022 (1990).

105. D. K. Christen, C. E. Klabunde, R. Feenstra, D. H. Lowdnes, D. P. Norton, J. D. Budai, H. R. Kerchner, J. R. Thompson, L. A. Boatner, J. Narayan, and R. Singh, “Transport Dissipation Effects in Y-Ba-Cu-O Thin Films,” Physica C 165-166, 1415 (1990).

106. J. Narayan and A. S. Nandedkar, “Atomic Structure and Energy of Grain Boundaries in Silicon, Germanium and Diamond,” Phil. Mag. B63, 1181 (1991).

107. J. Narayan, V. P. Godbole, and C. W. White, “Laser Method for Processing Continuous Diamond Thin Films,” Science 252, 416 (1991); Research News in Science 252, 375 (1991).

108. J. Narayan and S. Sharan, “Mechanism of Formation of 60 and 90 dislocations in Semiconductor Heterostructures,” Materials Sci. and Engr., B10, 261 (1991).

109. R. K. Singh, D. Bhattacharya and J. Narayan, “Improvement in Superconducting Properties of Silver Doped Y-Ba-Cu-O Thin Films,” Appl. Phys. Lett. 60, 255 (1992).

110. K. Jagannadham and J. Narayan, “Depression of Order Parameter and Effect on Grain Boundary Critical Current Density,” Mat. Sci. and Engr., B14, 214 (1992).

111. J. Narayan, V. P. Godbole, G. Matera, and R. K. Singh, “Enhancement of Nucleation and Adhesion of Diamond Films on Copper, Stainless Steel, and Silicon Substrates,” J. of Appl. Phys. 71 (2), 966 (1992).

112. J. Narayan and X. Chen, “Laser Pattering of Diamond Films,” J. of Appl. Phys. 71 (8), 3795 (1992).113. V. P. Godbole and J. Narayan, “Synthesis of Diamond Films on Hastealloy,” J. Mater. Res. 7, 2785

(1992).114. J. Narayan, P. Tiwari, X. Chen, J. Singh, R. Chowdhury, and T. Zheleva, “Epitaxial Growth of TiN

Films on (100) Silicon Substrates by Laser Physical Vapor Deposition,” Appl. Phys. Lett. 61, 1290 (1992).

115. R. K. Singh, D. Bhattacharya, and J. Narayan, “Control of Surface Particle Density in Pulsed Laser Deposition of superconducting Y1Ba2Cu3O7 and Diamondlike Carbon Thin Films,” Appl. Phys. Lett. 61, 483 (1992).

116. S. Pramanick and J. Narayan, “Effect of Processing Geometry on YBa2Cu3O7-x Plasma Emission During Superconducting Thin Film Growth of Pulsed Laser Evaporation Technique,” J. Appl. Phys. 73, 316 (1993).

117. P. Tiwari, R. Singh, and J. Narayan, “Evaluation of Physical and Electrical Properties of CoSi2 Thin Films on (100) Si by Laser Physical Vapor Deposition,” Philosophical Mag. B68, 413 (1993).

118. X. Chen and J. Narayan, “Effect of the Chemical Nature of Transition-Metal Substrates on Chemical Vapor Deposition of Diamond,” J. Appl. Phys. 74, 4168 (1993).

119. P. Tiwari, T. Zheleva, and J. Narayan, “Preparation of Pb(Zr0.54Ti0.46)O3 Thin Films on 9100) Si With Textured Y1Ba2Cu3O7 and YSZ Buffer Layers by LPVD,” Appl. Phys. Lett. 63, 30 (1993).

120. J. Narayan, J. Reddy, N. Biunno, S. M. Kanetkar, P. Tiwari, and N. Parikh, “Ion Assisted Laser Processing of CNx Films,” Mat. Sci. and Engr. B26, 49 (1994).

121. K. Jagannadham and J. Narayan, “ Invited Review - Microstructure and Properties of High-Temperature superconducting Materials,” Mat. Sci. and Engr. B26, 75 (1994).

122. S. Bhargava, H. D. Bist, S. B. Samanta, A. V. Narlikar, A. Rengan, and J. Narayan, “Nanoclusters in Laser Ablated Diamondlike Films Through Scanning Tunneling Microscopy,” Solid State Comm. 90, 205 (1994).

12

123. T. Zheleva, K. Jagannadham, and J. Narayan, “Epitaxial Growth in Large-Lattice-Mismatch Systems,” J. Appl. Phys. 75, 860 (1994).

124. R. Chowdhury, X. Chen, and J. Narayan, “Pulsed Laser Deposition of Epitaxial Si/TiN/Si(100) Heterostructures,” Appl. Phys. Lett. 64 (10), 1236 (1994).

125. J. Narayan, W. D. Fan, R. J. Narayan, P. Tiwari and H. H. Stadelmaier, “Diamond, Diamondlike and Titanium Nitride Biocompatible Coatings for Human Body Parts,” Mat. Sci. and Engr. B25, 5 (1994).

126. J. Narayan, P. Tiwari, K. Jagannadham, and O. W. Holland, “Formation of Epitaxial and Textured Films on Ceramics - (100) MgO Single Crystals by Pulsed Laser Deposition,” Appl. Phys. Lett. 64, 2093 (1994).

127. J. Narayan, R. Raghunathan, R. Chowdhury, and K. Jagannadham, “On the Mechanism of Combustion of Silicon Carbide,” J. Appl. Phys. 75, 7252 (1994).

128. W. D. Fan, X. Chen, K. Jagganadham, and J. Narayan, “Diamond-ceramic Composite Tool Coatings,” J. Mat. Res. 9, 2850 (1994).

129. M. O. Aboelfotoh, S. Oktyabrsky, and J. Narayan, “Microstructure Characterization of Cu3Ge/n-type GaAs Ohmic Contacts,” J. Appl. Phys. 76, 5760 (1994).

130. R. D. Vispute, R. Chowdhury, P. Tiwari and J. Narayan, “Pulsed Laser Deposition and Characterization of Epitaxial Cu/TiN/Si(100) Heterostructures,” Appl. Phys. Lett. 65, 2565 (1994).

131. R. K. Singh, S. Harkness, P. Tiwari, J. Narayan, C. Jahncke, and M. Paesler, “Existence of Superconductivity in Chain Disordered YBa2Cu3O7-d,” Phys. Rev. B51(14), 9155 (1995).

132. S. Oktyabrsky, H. Wu, R. D. Vispute and J. Narayan, “Misfit Dislocations in Low-Temperature Grown Ge/Si Heterostructures,” Phil. Mag. A71, 537 (1995).

133. M. Ichimura and J. Narayan, “Role of Surface Step on Misfit Dislocation Nucleation and Critical Thickness in Semiconductor Heterostructures,” Mat. Sci. and Engr. B31, 299 (1995).

134. M. Ichimura and J. Narayan, “Negative Surface Energy in Semiconductor Heterostructures,” Phil. Mag. A72, 297 (1995).

135. M. Ichimura and J. Narayan, “Atomic Study of Dislocation Nucleation in Ge/(001)Si Heterostructures,” Phil. Mag. A72, 281 (1995).

136. S. Oktyabrsky and J. Narayan, “New Mechanism of Formation of Stacking Faults in Ge/(001)Si Heterostructures,” Phil. Mag. A72, 305 (1995).

137. R. D. Vispute, Hong Wu and J. Narayan, “High Quality Aluminum Nitride Layers on Sapphire by Pulsed Laser Deposition,” Appl. Phys. Lett. 67, 1549 (1995).

138. J. Narayan R. D. Vispute, and K. Jagannadham,” Interfacial Processing and Adhesion of Diamond, Diamondlike Carbon and TiN Films on Metallic and Polymeric Substrates,” J. Adhesion Sci. Technol. 9, 753 (1995).

139. V. P. Godbole, K. Jagannadham, and J. Narayan, “Synthesis of Diamond Films on AIN Coated Nickel,” Appl. Phys. Lett. 67, 1322 (1995).

140. M. Ichimura and J. Narayan, “Atomic Study of Partial Misfit dislocations in Ge/(001)Si Heterostructures,” Phil. Mag. A73, 767 (1996).

141. V. P. Godbole and J. Narayan, “Aluminum Nitride Buffer Layer for Diamond Growth on Steels,” J. Mat. Res. 11(7), 1810 (1996).

142. T. Zheleva, K. Jagannadham, R. D. Vispute, S. Oktyabrsky, and J. Narayan, “Characterization of Highly Oriented (110) TiN Films Grown on Epitaxial Ge/Si(001) Heterostructures,” J. Mat. Res. 11, 399 (1996).

143. V. Weihnacht, W. D. Fan, K. Jagannadham, J. Narayan and C. T. Liu, “A New Design of Tungsten Carbide Tools with Diamond Coatings,” J. Mat. Res. 11, 2220 (1996).

144. J. Narayan, H. Wu and R. D. Vispute, “Laser Processing of BN and AlN Films,” J. Elect. Mat. 25, 143 (1996).

145. S. Oktyabrsky, M. O. Aboelfotoh, J. Narayan, and J. M. Woodall, “Cu3Ge Ohmic contacts to n-type GaAs,” J. Elect. Mat. 25, 1662 (1996).

146. S. Oktyabrsky, M. O. Aboelfotoh, and J. Narayan, “Microstructure and Chemistry of Cu-Ge Ohmic Contact Layers to GaAs,” J. Elect. Mat. 25, 1673 (1996).

13

147. K. Dovidenko, S. Oktyabrsky, J. Narayan, and M. Razeghi, “Epitaxial Aluminum Nitride Thin Films on Two Orientations of Sapphire,” J. Appl. Phys. 79, 2439 (1996).

148. M. A. Borek, S. Oktyabrsky, M. O. Aboelfotoh, and J. Narayan, “Low Resistivity Copper Germanide on (100) Si contacts and Interconnections,” Appl. Phys. Lett. 69, 3560-3562 (1996).

149. R. D. Vispute, J. Narayan, K. Dovidenko, K. Jagannadham, N. Parikh, A. Suvkhanov, J. D. Budai, “Heteroepitaxial Structures of SrTiO3/TiN on Si(100) by In-situ Pulsed Laser Deposition,” J. Appl. Phys. 80 (1996), No.12, p. 6720-6724.

150. R. Chowdhury, R. D. Vispute, K. Jagannadham, and J. Narayan, “Cahracteristics of Titanium Nitride Films Grown by Pulsed Laser Deposition,” J. Mat. Res. 11 (1196), No.6, 1458-1469.

151. K. Jagannadham, W. D. Fan, R. Komanduri, and J. Narayan, “Comparison of Diamond composite Coatings with Polycrystalline Diamond and Polycrystalline BN Layers on WC Tools,” J. Vac. Sci. and Technol. A15, 2262 (1997).

152. M. O. Aboelfotoh, S. Oktyabrsky, J. Narayan, and J. M. Woodall, “Electrical and Microstructural Characteristics of Ge/Cu Ohmic Contacts to n-type GaAs,” J. Mat. Res. 12, 2325 (1997).

153. A. K. Sharma and J. Narayan, “Synthesis and Processing of Superhard Carbon Nitride Solids (Invited Review),” International Materials Reviews 42, 137 (1997).

154. S. R. Kalyanraman, R. D. Vispute, S. Oktyabrsky, K. Dovidenko, K. Jagannadham, and J. Narayan, “Influence of Oxygen Background Pressure on Crystallinity of SrTiO3 Films Grown on MgO by PLD,” Appl. Phys. Lett. 71, 1709 (1997).

155. R. D. Vispute, J. Narayan, and J. D. Budai, “High-quality Optoelectric Grade Epitaxial AlN Films on a-Al2O3, Si and 6H-SiC by PLD,” Thin Solid Films 11, 171 (1997).

156. M. Q. Ding, A. F. Myers, S. M. Campausen, J. Narayan, J. J. Cuomo, J. J. Hren, and J. Bruley, “Field Emission from Amorphous Diamond Coated Mo Tip Emitters by Pulsed Laser Deposition,” J. Vac. Sci. Technol. B15, 840 (1997).

157. K. Dovidenko, S. Oktyabrsky, and J. Narayan, “Characteristics of Stacking Faults in AlN Thin Films,” J. Appl. Phys. 82, No.9, 4296-4299 (1997).

158. J. Narayan, K. Dovidenko, A. Sharma, and S. Oktyabrsky, “Defects and Interfaces in Epitaxial ZnO/Al2O3 and AlN/ZnO/a-Al2O3 Heterostructures,” J. Appl. Phys. 84, 2597 (1998).

159. K. Jagannadham, A. K. Sharma, Q. Wei, R. Kalyanraman, and J. Narayan, “Structural Characteristics of AlN Films by PLD and Magnetron sputtering: A Comparative Study,” J. Vac. Sci. Technol. A16(5), 2805 (1998).

160. M.O. Aboelfotoh, M.A. Borek, M.A., J. Narayan, Ohmic contact to P-type Gaas using Cu3Ge. Appl. Phys. Lett., 75, 3953 (1999).

161. A.K. Sharma, A. Kvit, J. Narayan, Growth of single crystal MgO on TiN/Si heterostructure by pulsed laser deposition. J. Vacuum Sci. & Tech. A, 17, 3393(1999). 162. A.K. Sharma, J. Narayan, J.F. Muth, C.W. Teng, C. Jin, A. Kvit, R.M. Kolbas, O.W. Holland, Optical and structural properties of epitaxial MgxZn1-xO alloys. Appl. Phys. Lett., 75, 3327 (1999). 163. Q, Wei, R.J. Narayan, A.K. Sharma, J. Sankar, J. Narayan, Preparation and mechanical properties of composite diamond-like carbon thin films. J. of Vacuum Sci. & Tech. A, 17, 3406 (1999).

164. Q. Wei, J. Sankar, A.D. Kelkar, J. Narayan, Microstructure evolution accompanying high temperature; uniaxial tensile creep of self-reinforced silicon nitride ceramics. Mat. Sci. Engg. A, 272, 380 (1999). 165. Q. Wei, J. Sankar, A.D. Kelkar, J. Narayan. Mechanical properties of diamond-like carbon composite thin films prepared by pulsed laser deposition. Composites: Part B, Engineering, 30, 675 (1999).

14

166. K. Dovidenko, S. Oktyabrsky, J. Narayan, M. Razeghi, Study of thin films polarity of group III nitrides. MRS Internet J. of Nitride Semiconductor Res., 4S1 G6.46 (1999). 167. V.P. Godbole, R. Narayan, Z. Xu, J. Narayan, J. Sankar, Diamond films and composites on cobalt-chromium alloys. Mat. Sci. Engg. B, 58, 251 (1999).

168. R. Kalyanaraman, S. Oktyabrsky, J. Narayan, The role of Ag in the pulsed laser growth of YBCO thin films. J. of Appl. Phys., 85, 6636 (1999).

169. S. Oktyabrsky, K. Dovidenko, A.K. Sharma, V, Joshkin, J. Narayan, Crystal structure and defects in nitrogen-deficient GaN. MRS Internet J. of Nitride Semiconductor Res., 4S1 G6.46 (1999). 170. S. Oktyabrsky, K. Dovidenko, A.K. Sharma, J. Narayan, V. Joshkin, Cubic GaN formation under nitrogen-deficient conditions. Appl. Phys. Lett., 74, 2465 (1999).

171. J.F. Muth, R.M. Kolbas, A.K. Sharma, S. Oktyabrsky, J. Narayan, Excitonic structure and adsorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition. J. of Appl. Phys., 85, 7884 (1999).

172. Y. Yamagata, A. Sharma, J. Narayan, R.M. Mayo, J.W. Newman, K. Ebihara, Optical emission study of ablation plasma plume in the preparation of diamond-like carbon films by KrF excimer laser. J. of Appl. Phys., 86, 4154 (1999).

173. M.O. Aboelfotoh, M.A. Borek, J. Narayan, Interaction of Cu and Cu3Ge thin films with Si1-xGex alloys. Appl. Phys. Lett., 75, 1739 (1999). 174. K.M. Hassan, A.K. Sharma, J. Narayan, J.F. Muth, C.W. Teng, R.M. Kolbas, Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition. Appl. Phys. Lett., 75, 1222 (1999). 175. R.M. Mayo, J.W. Newman, A. Sharma, Y. Yamagata, J. Narayan, Electrostatice measurement of plasma plume characteristics in pulsed laser evaporated carbon. J. of Appl. Phys., 86, 2865 (1999). 176. V.P. Godbole, K. Dovidenko, A.K. Sharma, J. Narayan, Thermal reactions and micro-structure of TiN-AlN layered nano-composites. Mat. Sci. Engg. B, 68, 85 (1999). 177. A.K. Sharma, J. Narayan, C. Jin, A. Kvit, A, S. Chattopadhyay, C. Lee, Integration of Pb(Zr0.52Ti.0.48) O-3 epilayers with Si by domain epitaxy. Appl. Phys. Lett., 76, 1458 (2000).

178. M.O. Aboelfotoh, M.A. Borek,, J. Narayan, Microstructure and electrical resistivity of Cu and Cu3Ge thin films on Si1-xGex alloy layers, J. of Appl. Phys., 87, 365 (2000).

179. C.W. Teng, J.F. Muth, U. Ozgur, M.J. Bergmann, H.O. Everitt, A.K. Sharma, C. Jin, J. Narayan, Refractive indices and adsorption coefficients of MgxZn1-xO alloys. Appl. Phys. Lett., 76, 979 (2000). 180. Q. Wei, J. Sankar, A.K. Sharma, S. Oktyabrsky, J. Narayan, R.J. Narayan, Atomic structure, electrical properties, and infrared range optical properties of diamondlike carbon films containing foreign atoms prepared by pulsed laser deposition. J. Mat. Res., 14, 633 (2000).

181. S.C. Jain, M. Willander, J. Narayan, R. Van Overstraeten, III-nitrides: Growth, characterization, and properties. J. of Appl. Phys., 87, 965 (2000).

15

182. C.W. Teng, J.F. Muth, R.M. Kolbas, K.M. Hassan, A.K. Sharma, A. Kvit, J. Narayan, Quantum confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al203 or an AlN Matrix. Appl. Phys. Lett., 76, 43 (2000). 183. H. Conrad, J. Narayan, On the grain size softening in nanocrystalline materials. Scripta Materialia, 42, 1025 (2000). 184. A.K. Sharma, R.J. Narayan, J. Narayan, J. Kasichainula, Structural and tribological characteristics of diamond-like carbon films deposited by pulsed laser ablation. Mat. Sci. Engg. B, 77, 139 (2000). 185. Y. Yamagata, A. Sharma, J. Narayan, R.M. Mayo, J.W. Newman, K. Ebihara, Comparative study of pulsed laser ablated plasma plumes from single crystal graphite and amorphous carbon target – part I optical emission spectroscopy. J. Appl. Phys., 88, 6861 (2000).

186. R.M. Mayo, J.W. Newman, Y. Yamagata, A. Sharma, J. Narayan, Comparative study of pulsed laser ablated plasma plumes from single crystal graphite and amorphous carbon targets – part II electrostatic probe measurements. J. Appl. Phys., 88, 6868-6874 (2000)

187. J. Narayan, Size and interface control of novel nanocrystalline materials using pulsed laser deposition. J. Nanoparticle Research, 91, (2000).

188. A.K. Sharma, J. Narayan, R.J. Narayan, K. Jagannadham, Structural and Tribological characteristics of diamondlike carbon films. Mat. Sci. Engg. B, 77, 139 (2000).

189. J. Narayan and Q. Wei, Superhard diamonlike carbon: preparation, theory and properties. Int. Mat. Rev. (Invited), 45, 133 (2000).

100 Recent Publications in Archival Journals from Prof. Narayan’s Group

1. Title: Raman Studies of GaN/sapphire thin film heterostructuresAuthor(s): Hushur, A; Manghnani, MH; P; Narayan, J.Source: JOURNAL OF APPLIED PHYSICS Volume: 106 Issue: 5 Article Number: 054317 Published: 2009

2. Title: Thin film epitaxy and structure property correlations for non-polar ZnO films Author(s): Pant, P; Budai, JD; Aggarwal, R; Narayan, RJ; Narayan, JSource: ACTA MATERIALIA Volume: 57 Issue: 15 Pages: 4426-4431 Published: 2009

3. Title: Formation of single and multiple deformation twins in nanocrystalline fcc metals Author(s): Zhu, YT; Narayan, J; Hirth, JP; Mahajan, S; Wu, XL; Liao, XZSource: ACTA MATERIALIA Volume: 57 Issue: 13 Pages: 3763-3770 Published: 2009

4. Title: Twinning partial multiplication at grain boundary in nanocrystalline fcc metals Author(s): Zhu, YT; Wu, XL; Liao, XZ, et al.Source: APPLIED PHYSICS LETTERS Volume: 95 Issue: 3 Article Number: 031909 Published: 2009

5. Title: Defect mediated room temperature ferromagnetism in VO2 thin films Author(s): Yang, TH; Nori, S; Zhou, H; and Narayan, J.

16

http://apps.isiknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=1&SID=4CAl2K85PMDfO2HcgbF&page=1&doc=4&colname=WOS

http://apps.isiknowledge.com/OneClickSearch.do?product=UA&search_mode=OneClickSearch&db_id=&SID=4CAl2K85PMDfO2HcgbF&field=AU&value=Liao%20XZ&ut=000268414100008&pos=6

http://apps.isiknowledge.com/OneClickSearch.do?product=UA&search_mode=OneClickSearch&db_id=&SID=4CAl2K85PMDfO2HcgbF&field=AU&value=Wu%20XL&ut=000268414100008&pos=5

http://apps.isiknowledge.com/OneClickSearch.do?product=UA&search_mode=OneClickSearch&db_id=&SID=4CAl2K85PMDfO2HcgbF&field=AU&value=Mahajan%20S&ut=000268414100008&pos=4&cacheurlFromRightClick=no


http://apps.isiknowledge.com/OneClickSearch.do?product=UA&search_mode=OneClickSearch&db_id=&SID=4CAl2K85PMDfO2HcgbF&field=AU&value=Narayan%20J&ut=000269420400009&pos=5

http://apps.isiknowledge.com/OneClickSearch.do?product=UA&search_mode=OneClickSearch&db_id=&SID=4CAl2K85PMDfO2HcgbF&field=AU&value=Narayan%20RJ&ut=000269420400009&pos=4&cacheurlFromRightClick=no


Source: APPLIED PHYSICS LETTERS Volume: 95 Issue: 10 Article Number: 102506 Published: 2009

6. Title: The synthesis and magnetic properties of a nanostructured Ni-MgO system Author(s): Narayan, J; Nori, S; Ramachandran, S, et al.Source: JOM Volume: 61 Issue: 6 Pages: 76-81 Published: 2009

7. Title: New frontier in thin film epitaxy and nanostructured materials Author(s): Narayan, JSource: INTERNATIONAL JOURNAL OF NANOTECHNOLOGY Volume: 6 Issue: 5-6 Pages: 493-510 Published: 2009

8. Title: Magnetic Properties of Self-Assembled Ni Nanoparticles in Two Dimensional Structures Author(s): Gupta, A; Narayan, J; Kumar, DSource: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 9 Issue: 6 Pages: 3993-3996 Published: 2009

9. Title: Structural characterization of two-step growth of epitaxial ZnO films on sapphire substrates at low temperatures Author(s): Pant, P; Budai, JD; Aggarwal, R, et al.Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 42 Issue: 10 Article Number: 105409 Published: 2009

10. Title: Magnetic properties and their dependence on deposition parameters of Co/Al2O3 multilayers grown by pulsed laser deposition Author(s): Aggarwal, R; Nori, S; Jin, CM, et al.Source: ACTA MATERIALIA Volume: 57 Issue: 6 Pages: 2040-2046 Published: 2009

11. Title: MoOx modified ZnGaO based transparent conducting oxides Author(s): Dutta, T; Gupta, P; Bhosle, V, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 105 Issue: 5 Article Number: 053704 Published: 2009

12. Title: Plasma plume dynamics in magnetically assisted pulsed laser deposition Author(s): Haverkamp, JD; Bourham, MA; Du, S, et al.Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 42 Issue: 2 Article Number: 025201 Published: 2009

13. Title: Growth of biepitaxial zinc oxide thin films on silicon (100) using yttria-stabilized zirconia buffer layer Author(s): Aggarwal, R; Jin, CM; Pant, P, et al.Source: APPLIED PHYSICS LETTERS Volume: 93 Issue: 25 Article Number: 251905 Published: 2008

14. Title: Self-thickening, cross-slip deformation twinning model Author(s): Narayan, J; Zhu, YT.Source: APPLIED PHYSICS LETTERS Volume: 92 Issue: 15 Article Number: 151908 Published: 2008

15. Title: Comparative Raman and HRTEM Study of Nanostructured GaN Nucleation Layers and Device Layers on Sapphire (0001) Author(s): Pant, P; Narayan, J; Wushuer, A, et al.

17

http://apps.isiknowledge.com/full_record.do?product=UA&search_mode=Refine&qid=5&SID=3COB1Kg94MncPO5EI2P&page=1&doc=7&colname=WOS














Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 8 Issue: 11 Pages: 5985-5992 Published: 2008

16. Title: Defect dependent ferromagnetism in MgO doped with Ni and Co Author(s): Narayan, J; Nori, S; Pandya, DK, et al.Source: APPLIED PHYSICS LETTERS Volume: 93 Issue: 8 Article Number: 082507 Published: 2008

17. Title: Observation of room temperature ferromagnetism in Ga : ZnO: A transition metal free transparent ferromagnetic conductor Author(s): Bhosle, V; Narayan, JSource: APPLIED PHYSICS LETTERS Volume: 93 Issue: 2 Article Number: 021912 Published: 2008

18. Title: Deformation twin formed by self-thickening, cross-slip mechanism in nanocrystalline Ni Author(s): Wu, XL; Narayan, J; Zhu, YTSource: APPLIED PHYSICS LETTERS Volume: 93 Issue: 3 Article Number: 031910 Published: 2008

19. Title: Plasma instabilities in magnetically assisted pulsed laser deposition Author(s): Haverkamp, JD; Bourham, MA; Du, S, et al.Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 41 Issue: 11 Article Number: 115206 Published: 2008

20. Title: Structure-magnetic property correlations in the epitaxial FePt system Author(s): Trichy, GR; Chakraborti, D; Narayan, J, et al.Source: APPLIED PHYSICS LETTERS Volume: 92 Issue: 10 Article Number: 102504 Published: 2008

21. Title: Magnetic properties of epitaxial oxide heterostructures Author(s): Ramachandran, S; Prater, JT; Sudhakar, N, et al.Source: SOLID STATE COMMUNICATIONS Volume: 145 Issue: 1-2 Pages: 18-22 Published: 2008

22. Title: Effect of Al doping on the magnetic and electrical properties of Zn(Cu)O based diluted magnetic semiconductors Author(s): Chakraborti, D; Trichy, G; Narayan, J, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 11 Article Number: 113908 Published: 2007

23. Title: The effect of oxygen annealing on ZnO : Cu and ZnO :(Cu,Al) diluted magnetic semiconductors Author(s): Chakraborti, D; Trichy, GR; Prater, JT, et al.Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 40 Issue: 24 Pages: 7606-7613 Published: 2007

24. Title: High-kappa gate dielectrics with ultra-low leakage current for sub-45 nm CMOS Author(s): Venkateshan, A; Singh, R; Poole, KF, et al.Source: ELECTRONICS LETTERS Volume: 43 Pages: 1130-1132 Published: 2007

25. Title: Nanostructured GaN nucleation layer for light-emitting diodes Author(s): Narayan, J; Pant, P; Wei, W, et al.Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 7

18















Issue: 8 Pages: 2719-2725 Published: AUG 2007

26. Title: Growth, characterization, and magnetic properties of FePt nanodots on Si (100) Author(s): Trichy, GR; Chakraborti, D; Narayan, J, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 3 Article Number: 033901 Published: AUG 1 2007

27. Title: Gallium-doped zinc oxide films as transparent electrodes for organic solar cell applications Author(s): Bhosle, V; Prater, JT; Yang, F, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 2 Article Number: 023501 Published: JUL 15 2007

28. Title: Anisotropic magnetic properties in [110] oriented epitaxial La0.7Sr0.3MnO3 films on (0001) sapphire Author(s): Bhosle, V; Prater, JT; Narayan, JSource: JOURNAL OF APPLIED PHYSICS Volume: 102 Issue: 1 Article Number: 013527 Published: JUL 1 2007

29. Title: Room temperature ferromagnetism and magnetotransport properties of the layered manganite system La1.2Ba1.8Mn2-xRuxO7 (0 <= x <= 1-0) Author(s): Sudhakar, N; Rajeev, KP; Tiwari, A, et al.Source: SOLID STATE COMMUNICATIONS Volume: 142 Issue: 9 Pages: 519-524 Published: JUN 2007

30. Title: Structural, magnetic, and electron transport studies on nanocrystalline layered manganite La1.2Ba1.8Mn2O7 system Author(s): Sudhakar, N; Ningthoujam, RS; Rajeev, KP; Gajbhiye, NS; Narayan, JSource: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 7 Issue: 3 Pages: 965-969 Published: 2007

31. Title: Magnetic properties of Ni-doped MgO diluted magnetic insulators Author(s): Ramachandran, S; Narayan, J; Prater, JTSource: APPLIED PHYSICS LETTERS Volume: 90 Issue: 13 Article Number: 132511 Published: MAR 26 2007

32. Title: Epitaxial growth and magnetic properties of La0.7Sr0.3MnO3 films on (0001) sapphire Author(s): Bhosle, V; Narayan, JSource: APPLIED PHYSICS LETTERS Volume: 90 Issue: 10 Article Number: 101903 Published: MAR 5 2007

33. Title: Magnetic, electrical, and microstructural characterization of ZnO thin films codoped with Co and Cu Author(s): Chakraborti, D; Ramachandran, S; Trichy, G, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 101 Issue: 5 Article Number: 053918 Published: MAR 1 2007

34. Title: Room temperature ferromagnetism in Zn1-xCuxO thin films Author(s): Chakraborti, D; Narayan, J; Prater, JTSource: APPLIED PHYSICS LETTERS Volume: 90 Issue: 6 Article Number: 062504 Published: FEB 5 2007

35. Title: Photoluminescence study of ZnO films codoped with nitrogen and tellurium

19

















Author(s): Porter, HL; Muth, JF; Narayan, J, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 12 Article Number: 123102 Published: DEC 15 2006

36. Title: Transmission electron microscopy observations on the microstructure of naturally aged Al-Mg-Si alloy AA6022 processed with an electric field Author(s): Conrad, H; Ramachandran, S; Jung, K; Narayan, J Source: JOURNAL OF MATERIALS SCIENCE Volume: 41 Issue: 22 Pages: 7555-7561 Published: NOV 2006

37. Title: Phase transition and critical issues in structure-property correlations of vanadium oxide Author(s): Narayan, J; Bhosle, VMSource: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 10 Article Number: 103524 Published: NOV 15 2006

38. Title: Regular and high resolution transmission electron microscopy observations on the precipitates in a naturally aged Al-Mg-Si alloy AA6022 Author(s): Ramachandran, S; Jung, K; Narayan, J, et al.Source: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING Volume: 435 Pages: 693-697 Published: NOV 5 2006

39. Title: Microstructure and electrical property correlations in Ga : ZnO transparent conducting thin films Author(s): Bhosle, V; Narayan, JSource: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 9 Article Number: 093519 Published: NOV 1 2006

40. Title: Self-assembled magnetic nanostructures: Epitaxial Ni nanodots on TiN/Si (001) surface Author(s): Zhou, H; Narayan, JSource: JOURNAL OF NANOPARTICLE RESEARCH Volume: 8 Issue: 5 Pages: 595-600 Published: OCT 2006

41. Title: Methods for processing tantalum films of controlled microstructures and properties Author(s): Narayan, J; Bhosle, V; Tiwari, A, et al.Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Volume: 24 Issue: 5 Pages: 1948-1954 Published: SEP-OCT 2006

42. Title: L1(0) ordered epitaxial FePt (001) thin films on TiN/Si (100) by pulsed laser deposition Author(s): Trichy, GR; Narayan, J; Zhou, HSource: APPLIED PHYSICS LETTERS Volume: 89 Issue: 13 Article Number: 132502 Published: SEP 25 2006

43. Title: Electrical properties of transparent and conducting Ga doped ZnO Author(s): Bhosle, V; Tiwari, A; Narayan, JSource: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 3 Article Number: 033713 Published: AUG 1 2006

44. Title: Critical size for defects in nanostructured materials Author(s): Narayan, JSource: JOURNAL OF APPLIED PHYSICS Volume: 100 Issue: 3 Article Number:

20
















034309 Published: AUG 1 2006

45. Title: Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors Author(s): Ramachandran, S; Narayan, J; Prater, JTSource: APPLIED PHYSICS LETTERS Volume: 88 Issue: 24 Article Number: 242503 Published: JUN 12 2006

46. Title: Epitaxial ZnO/Pt layered structures and ZnO-Pt nanodot composites on sapphire (0001) Author(s): Chugh, A; Ramachandran, S; Tiwari, A, et al.Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 35 Issue: 5 Pages: 840-845 Published: 2006

47. Title: Co-doped ZnO dilute magnetic semiconductor Author(s): Prater, JT; Ramachandran, S; Tiwari, A; Narayan, JSource: JOURNAL OF ELECTRONIC MATERIALS Volume: 35 Issue: 5 Pages: 852-856 Published: 2006

48. Title: Growth of highly conducting epitaxial ZnO-Pt-ZnO heterostructure on alpha-Al2O3 (0001) Author(s): Ramachandran, S; Chugh, A; Tiwari, A, et al.Source: JOURNAL OF CRYSTAL GROWTH Volume: 291 Issue: 1 Pages: 212-217 Published: MAY 15 2006

49. Title: Hyperbaric laser chemical vapor deposition of carbon fibers from the 1-alkenes, 1-alkynes, and benzene Author(s): Maxwell, JL; Boman, M; Springer, RW, et al.Source: JOURNAL OF THE AMERICAN CHEMICAL SOCIETY Volume: 128 Issue: 13 Pages: 4405-4413 Published: APR 5 2006

50. Title: Ferromagnetism in Co doped CeO2: Observation of a giant magnetic moment with a high Curie temperature Author(s): Tiwari, A; Bhosle, VM; Ramachandran, S, et al.Source: APPLIED PHYSICS LETTERS Volume: 88 Issue: 14 Article Number: 142511 Published: APR 3 2006

51. Title: Growth and observation of low-field giant magnetoresistance in La0.7Sr0.3MnO3/ZnO superlattice structures Author(s): Tiwari, A; Narayan, JSource: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 6 Issue: 3 Pages: 612-617 Published: MAR 2006

52. Title: Characteristics of nucleation layer and epitaxy in GaN/sapphire heterostructures Author(s): Narayan, J; Pant, P; Chugh, A, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 99 Issue: 5 Article Number: 054313 Published: MAR 1 2006

53. Title: Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO Author(s): Bhosle, V; Tiwari, A; Narayan, JSource: APPLIED PHYSICS LETTERS Volume: 88 Issue: 3 Article Number: 032106 Published: JAN 16 2006

54. Title: Grain size softening in nanocrystalline TiN Author(s): Conrad, H; Narayan, J; Jung, K

21
















Source: INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS Volume: 23 Issue: 4-6 Pages: 301-305 Published: 2005

55. Title: Epitaxial growth and properties of Zn1-xVxO diluted magnetic semiconductor thin films Author(s): Ramachandran, S; Tiwari, A; Narayan, J, et al.Source: APPLIED PHYSICS LETTERS Volume: 87 Issue: 17 Article Number: 172502 Published: OCT 24 2005

56. Title: Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium Author(s): Porter, HL; Cai, AL; Muth, JF, et al.Source: APPLIED PHYSICS LETTERS Volume: 86 Article Number: 211918 Published: 2005

57. Title: Epitaxial growth and properties of MoOx(2 < x < 2.75) films Author(s): Bhosle, V; Tiwari, A; Narayan, JSource: JOURNAL OF APPLIED PHYSICS Volume: 97 Issue: 8 Article Number: 083539 Published: APR 15 2005

58. Title: Epitaxial growth of zinc oxide thin films on silicon Author(s): Jin, CM; Narayan, R; Tiwari, A, et al.Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Volume: 117 Issue: 3 Pages: 348-354 Published: MAR 25 2005

59. Title: Electrical transport in ZnO(1-delta)films: Transition from band-gap insulator to Anderson localized insulator (vol 96, pg 3827, 2004) Author(s): Tiwari, A; Jin, C; Narayan, J, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 97 Issue: 5 Article Number: 059902 Published: MAR 1 2005

60. Title: Effect of UV/VUV enhanced RTP on process variation and device performance of metal gate high-kappa gate stacks for the sub-90-nm CMOS regime Author(s): Damjanovic, D; Bolla, HK; Singh, R, et al.Source: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING Volume: 18 Issue: 1 Pages: 55-62 Published: FEB 2005

61. Title: New frontiers in thin film growth and nanomaterials Author(s): Narayan, JSource: METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE Volume: 36 Issue: 1 Pages: 5-22 Published: 2005

62. Title: New frontiers in thin film growth and nanomaterials Author(s): Narayan, JSource: METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE Volume: 36A Issue: 2 Pages: 277-294 Published: FEB 2005

63. Title: Pulsed laser deposition assisted novel synthesis of self-assembled magnetic nanoparticles Author(s): Kumar, D; Yarmolenko, S; Sarkar, J, et al.Source: COMPOSITES PART B-ENGINEERING Volume: 35 Issue: 2 Pages: 149-155 Published: 2004

22














64. Title: The effect of interfacial layers on high-performance gate dielectrics processed by RTP-ALD Author(s): Fakhruddin, M; Singh, R; Poole, KF, Narayan, J.Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 151 Issue: 8 Pages: G507-G511 Published: 2004

65. Title: Growth of single-phase c-axis aligned La1.2Ca1.8Mn2O7 films on SrTiO3(001) Author(s): Tiwari, A; Narayan, J; Sudhakar, N, et al.Source: SOLID STATE COMMUNICATIONS Volume: 132 Issue: 12 Pages: 863-866 Published: DEC 2004

66. Title: Origin of room-temperature ferromagnetism in cobalt-doped ZnO Author(s): Ramachandran, S; Tiwari, A; Narayan, JSource: JOURNAL OF ELECTRONIC MATERIALS Volume: 33 Issue: 11 Pages: 1298-1302 Published: 2004

67. Title: Electrical transport in ZnO1-delta films: Transition from band-gap insulator to Anderson localized insulator Author(s): Tiwari, A; Jin, C; Narayan, J, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 96 Issue: 7 Pages: 3827-3830 Published: OCT 1 2004

68. Title: Novel methods of forming self-assembled nanostructured materials: Ni nanodots in Al2O3 and TiN matrices Author(s): Narayan, J; Tiwari, ASource: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 4 Issue: 7 Pages: 726-732 Published: SEP 2004

69. Title: Epitaxial GaN on Si(111): Process control of SiNx interlayer formation Author(s): Rawdanowicz, TA; Narayan, JSource: APPLIED PHYSICS LETTERS Volume: 85 Issue: 1 Pages: 133-135 Published: JUL 5 2004

70. Title: Zn0.9Co0.1O-based diluted magnetic semiconducting thin films Author(s): Ramachandran, S; Tiwari, A; Narayan, JSource: APPLIED PHYSICS LETTERS Volume: 84 Issue: 25 Pages: 5255-5257 Published: JUN 21 2004

71. Title: TaN-TiN binary alloys and superlattices as diffusion barriers for copper interconnections (vol 33, pg 1, 2004) Author(s): Wang, H; Gupta, A; Tiwari, A, et al.Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 33 Issue: 1 Pages: L5-L5 Published: JAN 2004

72. Title: Role of self-assembled gold nanodots in improving the electrical and optical characteristics of zinc oxide films Author(s): Tiwari, A; Chugh, A; Jin, C, et al.Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Volume: 3 Issue: 5 Pages: 368-371 Published: OCT 2003

73. Title: TaN-TiN binary alloys and superlattices as diffusion barriers for copper interconnects Author(s): Wang, H; Gupta, A; Tiwari, A, et al.Source: JOURNAL OF ELECTRONIC MATERIALS Volume: 32 Issue: 10 Pages:

23













http://apps.isiknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=1&SID=4CAl2K85PMDfO2HcgbF&page=3&doc=104&colname=WOS&cacheurlFromRightClick=no




994-999 Published: 2003

74. Title: Formation of self-assembled epitaxial nickel nanostructures Author(s): Zhou, H; Kumar, D; Kvit, A, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 94 Issue: 8 Pages: 4841-4846 Published: OCT 15 2003

75. Title: Growth and characteristics of TaN/TiN superlattice structures Author(s): Wang, H; Zhang, X; Gupta, A, et al.Source: APPLIED PHYSICS LETTERS Volume: 83 Issue: 15 Pages: 3072-3074 Published: OCT 13 2003

76. Title: Synthesis of bulk nanostructured Zn by combinations of cryomilling and powder consolidation by room temperature milling: optimizing mechanical properties Author(s): Zhu, XK; Zhang, X; Wang, H, et al.Source: SCRIPTA MATERIALIA Volume: 49 Issue: 5 Pages: 429-433 Published: SEP 2003

77. Title: A novel technique for making self-encapsulated and self-aligned copper films Author(s): Chugh, A; Tiwari, A; Kvit, A, et al.Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Volume: 103 Issue: 1 Pages: 45-48 Published: SEP 25 2003

78. Title: Rectifying electrical characteristics of La0.7Sr0.3MnO3/ZnO heterostructure Author(s): Tiwari, A; Jin, C; Kumar, D, et al.Source: APPLIED PHYSICS LETTERS Volume: 83 Issue: 9 Pages: 1773-1775 Published: SEP 1 2003

79. Title: Effect of microstructure on diffusion of copper in TiN films Author(s): Gupta, A; Wang, H; Kvit, A, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 93 Issue: 9 Pages: 5210-5214 Published: MAY 1 2003

80. Title: Role of silver addition in the synthesis of high critical current density MgB2 bulk superconductors Author(s): Kumar, D; Pennycook, SJ; Narayan, J, et al.Source: SUPERCONDUCTOR SCIENCE & TECHNOLOGY Volume: 16 Issue: 4 Pages: 455-458 Published: APR 2003

81. Title: Plasma plume characteristics and properties of pulsed laser deposited diamond-like carbon films Author(s): Haverkamp, J; Mayo, RM; Bourham, MA, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 93 Issue: 6 Pages: 3627-3634 Published: MAR 15 2003

82. Title: Evolution of microstructure and mechanical properties of in situ consolidated bulk ultra-fine-grained and nanocrystalline Zn prepared by ball milling Author(s): Zhang, X; Wang, H; Scattergood, RO, et al.Source: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING Volume: 344 Issue: 1-2 Pages: 175-181 Published: MAR 15 2003

83. Title: Growth, characterization,, and electrical properties of PbZr0.52Ti0.48O3 thin films

24















on buffered silicon substrates using pulsed laser deposition Author(s): Gilmore, WM; Chattopadhyay, S; Kvit, A, et al.Source: JOURNAL OF MATERIALS RESEARCH Volume: 18 Issue: 1 Pages: 111-114 Published: JAN 2003

84. Title: Domain epitaxy: A unified paradigm for thin film growth Author(s): Narayan, J; Larson, BCSource: JOURNAL OF APPLIED PHYSICS Volume: 93 Issue: 1 Pages: 278-285 Published: JAN 1 2003

85. Title: Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates Author(s): Narayan, J; Sharma, AK; Kvit, A, et al.Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 1 Pages: 9-13 Published: 2002

86. Title: Low temperature electrical transport in La1-xNdxNiO3-delta Author(s): Tiwari, A; Rajeev, KP; Narayan, JSource: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 6-7 Pages: 357-361 Published: 2002

87. Title: Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films Author(s): Tiwari, A; Jin, C; Kvit, A, et al.Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 6-7 Pages: 371-374 Published: 2002

88. Title: Integration of single crystal La0.7Sr0.3MnO3 films with Si(001) Author(s): Tiwari, A; Chug, A; Jin, C, et al.Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 12 Pages: 679-682 Published: 2002

89. Title: Weak-localization effect in single crystal TaN(001) films Author(s): Tiwari, A; Wang, H; Kumar, D, et al.Source: MODERN PHYSICS LETTERS B Volume: 16 Issue: 28-29 Pages: 1143-1149 Published: DEC 20 2002

90. Title: Formation of misfit dislocations in thin film heterostructures Author(s): Narayan, J; Oktyabrsky, SSource: JOURNAL OF APPLIED PHYSICS Volume: 92 Issue: 12 Pages: 7122-7127 Published: DEC 15 2002

91. Title: Mechanisms for grain size hardening and softening in Zn Author(s): Conrad, H; Narayan, JSource: ACTA MATERIALIA Volume: 50 Issue: 20 Pages: 5067-5078 Published: DEC 3 2002

92. Title: Synthesis and atomic-level characterization of Ni nanoparticles in Al2O3 matrix Author(s): Kumar, D; Pennycook, SJ; Lupini, A, et al.Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 22 Pages: 4204-4206 Published:2002

93. Title: Formation of epitaxial Au/Ni/Au ohmic contacts to p-GaN Author(s): Narayan, J; Wang, H; Oh, TH, et al.Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 21 Pages: 3978-3980

25













Published: NOV 18 2002

94. Title: Studies of deformation mechanisms in ultra-fine-grained and nanostructured Zn Author(s): Zhang, X; Wang, H; Scattergood, RO, et al.Source: ACTA MATERIALIA Volume: 50 Issue: 19 Pages: 4823-4830 Published: NOV 14 2002

95. Title: Epitaxial growth of ZnO films on si(111) Author(s): Tiwari, A; Park, M; Jin, C, et al.Source: JOURNAL OF MATERIALS RESEARCH Volume: 17 Issue: 10 Pages: 2480-2483 Published: OCT 2002

96. Title: Z-contrast imaging of dislocation cores at the GaAs/Si interface Author(s): Lopatin, S; Pennycook, SJ; Narayan, J, et al.Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 15 Pages: 2728-2730 Published: OCT 7 2002

97. Title: Modulated oscillatory hardening and dynamic recrystallization in cryomilled nanocrystalline Zn Author(s): Zhang, X; Wang, H; Scattergood, RO, et al.Source: ACTA MATERIALIA Volume: 50 Issue: 16 Pages: 3995-4004 Published: SEP 20 2002

98. Title: Mechanism for grain size softening in nanocrystalline Zn Author(s): Conrad, H; Narayan, JSource: APPLIED PHYSICS LETTERS Volume: 81 Issue: 12 Pages: 2241-2243 Published: SEP 16 2002

99. Title: Copper diffusion characteristics in single-crystal and polycrystalline TaN Author(s): Wang, H; Tiwari, A; Zhang, X, et al.Source: APPLIED PHYSICS LETTERS Volume: 81 Issue: 8 Pages: 1453-1455 Published: AUG 19 2002

100. Title: Mechanical properties of cyromilled nanocrystalline Zn studied by the miniaturized disk bend test Author(s): Zhang, X; Wang, H; Scattergood, RO, et al.Source: ACTA MATERIALIA Volume: 50 Issue: 13 Pages: 3527-3533 Published: AUG 1 2002

Summary of Narayan’s Research Contributions (with Most Cited Papers Below)

(1) Defects and diffusion in magnesium Oxide ( Most Cited #52 and 59; Narayan & Washburn, Acta Met 21, 533(1973); Phil Mag 26, 1179(1972))

Narayan Provided first direct evidence for the presence of paired vacancies (Schottky defects) and paired interstitials (Frenkel defects) and their clusters in magnesium oxide. This research was quite groundbreaking in the field of ionic solids and ceramics, especially in the context of seminal work on the presence of vacancies in metals by Simmons and Balluffi. Through his ingenious in-situ TEM

26










experiments, Narayan studied diffusion mechanisms of Schottky and Frenkel defects and showed activation energy for diffusion along the dislocations and grain boundaries (pipe diffusion) to be approximately half of the bulk value. This work has proved to be pivotal to processing of materials, particularly, ceramics and semiconductors. (2) Ion-solid interactions (Ion Implantation), solid-phase epitaxy, and formation of novel

supersaturated semiconductor alloys (Most Cited # 9, 12, 14, , 23, 26, 28, 29, see attachment below)

Narayan’s expertise in defects and diffusion was ideally suited for the next phase of his career at ORNL on ion implantation, solid phase epitaxy, rapid thermal annealing, and formation of supersaturated semiconductor alloys. He has made outstanding contributions in each of these areas; he established atomic structure of displacement cascades and developed an amorphization model for semiconductors based upon his careful experiments which led to the determination of critical damage energy for amorphization (12eV/atom for silicon). He performed elegant TEM experiments on solid-phase-epitaxy kinetics, and discovered the formation of supersaturated semiconductor alloys with solubility limits exceeding as much as 500 over the equilibrium values. This is a critical step in ion implantation doping for ultra-shallow p-n junctions in current and future devices. Narayan established amorphization in silicon to be the first-order phase transformation with a break in entropy, and proposed a well-known crystallization model to explain orientation dependence of crystallization kinetics and twin defect nucleation.

(3) Pulsed laser annealing and rapid thermal processing of semiconductors (Most Cited # 3, 11, 14, 27, 29, 34, 39, 46; US Patents: # 4,147,563(1979); 4,181,538(1980); 4,261,764(1981))

Narayan and his coworkers at ORNL discovered pulsed laser annealing to remove ion implantation damage and related defects in ion implanted silicon, and created “defect-free” supersaturated semiconductor alloys by nonequilibrium melting and quenching with rates exceeding billions of degrees per second. He performed seminal experiments on interfacial instability and cell formation under controlled rapid quenching conditions. Narayan invented laser induced diffusion to form highly efficient ultra-shallow p-n junctions and low-cost laser-diffused solar cells. This technique is being adopted currently to form next-generation ultra-dense microelectronic devices with feature size less than 50nm. Subsequent research in laser (transient thermal) processing resulted in the discovery of flame annealing and rapid thermal processing, which constitutes the backbone of current device fabrication.

(4) Pulsed laser evaporation and deposition of thin films (Most Cited # 1, 4, 5, 6, , 13, 16, 18, 20, 21,, 22, 30; US Patents: # 5,406,123 (1995); 6,734 091 (2004); 6,955, 985 (2005)

Narayan’s critical understanding of laser-solid interactions led to nonequilibrium pulsed laser evaporation at higher laser energies, and deposition of thin films. His group (along with Bell Core group) published first seminal paper on pulsed laser deposition (PLD) of thin films of high-Tc superconductors in 1987 (Most Cited # 4). Since then, PLD technique has become one of the most popular techniques for thin film deposition along with MOCVD and MBE. The PLD is proving to be an elegant nonequilibrium technique, lending itself to higher quality films of multicomponent systems at lower thermal budgets with fewer processing steps. Singh and Narayan developed a theoretical model based upon laser plume generation and expansion to lay a firm foundation of PLD, leading to Most Cited #1 and #5.

(5) Domain matching epitaxy: Thin film epitaxy across the misfit scale (Most Cited # 2,7, 8, 15, 20,21, 30, 42) US Patents: # 5,406,123 (1995); 6,734 091 (2004); 6,955, 985 (2005)

Narayan discovered a new paradigm for thin film epitaxy across the misfit scale based upon matching of integral multiples of lattice planes across the film-substrate interface. Thus, the films with 2% and 25%

27

misfits involve 49/50 and 3/4 matching, respectively. If the misfit falls in between the integral multiples, it is accommodated by the principle of domain variation, where two domains alternate with a certain frequency. The GaN based III-nitrides and ZnO II-oxides with misfit ranging from 13-20% on sapphire and silicon substrates can be grown by domain matching epitaxy paradigm. Since the critical thickness under such a large misfit is less than a monolayer, most of the strain is relaxed in less than two monolayers so that rest of the film can grow relatively strain-free, as demonstrated by in-situ synchrotron experiments of ZnO growth on sapphire by Narayan and Larson (# 42). Thus, for hard materials with higher lattice friction and dislocation nucleation energy, better quality film can be grown at larger misfits with the DME paradigm. The DME paradigm has been used to grow nucleation layer, device layer, and epitaxial Ohmic contact layer to fabricate next-generation LEDs for solid state lighting.

Kopin and Kobrite (Chinese Subsidiary of Kopin) Corporations have licensed these patents to manufacture high-efficiency LEDs and lasers on sapphire and silicon substrates.

(6) Nanotechnology for high-efficiency LEDs and lasers: (Applied Phys Lett. 81, 841 (2002); 81, 3978 (2002)); US Patents: # 6,881,983 (2005); 6,847,052 (2005); 7,122,841(2006)

Narayan and Kopin engineers have invented novel “Nano Pocket” LEDs where carriers are quantum confined by introducing a thickness variation to control the bandgap of GaInN/GaN quantum wells. This technology has been used to further enhance quantum efficiency of solid-state LEDs to compete effectively with fluorescent lighting. The thickness variation is introduced during thin film growth as a result of misfit strain between GaInN and GaN layers. This phenomenon was discovered and modeled by Narayan to predict processing parameters and optimize the structures for high efficiency.

(7) Defects and interfaces in thin film heterostructures

(a) Ge/Si(100) and Si-Ge/Si(100) thin film heterostructures (Most Cited # 37, 41 66, 96)

Narayan proposed the mechanism of misfit stress relaxation by nucleation of slip dislocation at the steps on the free surface of the film, above a critical thickness. In the case of Si-Ge/Si(100) heterostructure, he verified them to be 600 dislocations, via in-situ TEM experiments, which glide to the interface. Another set of correct 600 dislocations can be nucleated at the surface to form 900 dislocations or incorrect Burgers vectors of the second set can lead to formation of stacking faults. Narayan and coworkers showed that critical thickness is increased under tensile stress because of higher dislocation nucleation energy, and it can be also increased under three-dimensional growth conditions. Narayan calculated core energy and core radii of dislocations and established orientation dependence of core energy of dislocations, which forms the basis for obtaining dislocation-free silicon wafers for devices. He published seminal papers on defect control and reduction in semiconductor heterostructures, leading to three U.S. patents.

(b) ZnO and perovskite based thin film epitaxy and devices (Most Cited # 8, , 15, , 17, 22, 33,87)

Narayan and coworkers pioneered epitaxial growth of ZnO films using pulsed laser deposition on sapphire (0001) and silicon (111) substrates via domain matching epitaxy. By controlling two-dimensional growth characteristics of initial layer, misfit dislocations are confined in this layer, and the rest of the film is grown relatively “defect-free.” He obtained fundamental electrical and optical properties of ZnO films as a standard for other researchers. Narayan invented a novel method of p-type doping of ZnO by bombarding with low-energy N2

+ ions during thin film growth, where molecular ions break up into atomic nitrogen upon impact and get incorporated into the film. He has created novel ZnO based thin film heterostructures, where ZnO is doped with magnetic impurities, thus utilizing the charge

28

as well as the spin of an electron for novel spintronic devices. He also invented ZnMgO alloys (of wurtzite and zince blende structure) for increasing the bandgap and ZnCdO alloys for decreasing the bandgap to cover the entire visible spectrum. The cubic ZnMgO alloys can be directly grown on Si(100) via DME for integration with silicon based microelectronics, and creation of novel smart sensor structures. These ZnO based materials have been also grown on perovskite based LSMO (p-type) materials for novel LEDs and sensors. Kopin Corporation has licensed Narayan’s US patents ( # 6,423,983(2002) and 6,518,077 (2003)) to manufacture next-generation high-efficiency ZnO based LEDs and sensors.

(c) High-Tc based thin film heterostructures (Most Cited # 4, 5, 6, , 44, , 65, 67, 88, 90, 92, 93,99)

Narayan and his coworkers have pioneered pulsed laser deposition of high-Tc based thin film heterostructures. He discovered 1-2-4 (Y1Ba2Cu4O8) superconductors Tc> 80-100K (U.S. patent # 5,063,202) and composites 1-2-4 and 1-2-3 (Y1Ba2Cu4O7-) with enhanced flux-pinning characteristics. In addition, the 1-2-4 phase is much more stable than 1-2-3 under oxygen ambient.

(d) Diamond and diamondlike materials (Most Cited # 13, 16, 27, 35, 36, 37, , 49, 64, 71, 75)

Narayan is very well known for epitaxial growth of diamond thin films on Si(100) and Cu (100)substrates. He invented (US Patent # 5,221,411(1993)) a laser method for synthesis and processing of continuous diamond thin films on nondiamond substrates such as Cu(100). He used PLD to create hydrogen-free diamondlike carbon films and invented a new laser ablation and plasma hybrid technique to further enhance the Sp3 fraction in diamondlike films.

(8) Novel materials: nanostructured materials (Most Cited # 24, 32, 44, 68, 69, 81, 82, 94)

Narayan invented metal-ceramic composites having unique and improved mechanical and optical properties. The first groundbreaking paper on Ni-MgO nanocomposites appeared in 1981 (Phys Rev Lett 46, 1491). The metallic precipitates in the ceramics act as dislocation sources and modify photon-solid interactions (U.S. patent # 4,376,755 + IR-100 Award) for solar selective absorbers, cathodochromic, photochromic and data storage applications. More recently, his work has focused on metal, WC and TiN nanocomposites with theoretical modeling to explain grain size dependence on mechanical properties. Using DME and 3-D thin-film growth concepts (Volmer-Weber growth), Narayan invented 3-D self-assembled nanostructures with oriented nanodots (US Patent # 7,105,118, Sept 12, 2006), which NSF hailed as one of the breakthroughs of the year (2004).

(9) High-resolution electron microscopy and other techniques and structure-property correlations ( Most Cited # 10, 12, 36, 37, 41, 50)Narayan developed atomic-resolution electron microscopy techniques to study the atomic structure of defects (dislocations) and interfaces, which are based upon a three-step interactive procedure: calculation simulation and comparison with experimental results. Narayan and his coworkers at ORNL also developed direct imaging of dopants distribution and lattice location by scanning transmission electron microscopy. These STEM and STEM-Z based techniques with Angstrom resolution are critical for atomic structure, chemistry and property correlations, particularly in nanostructured materials and nanocomposites.

29

50 Most Cited Papers of Professor Narayan from the Web of Science

1. Title: III-nitrides: Growth, characterization, and properties Author(s): Jain, SC; Willander, M; Narayan, J, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 87 Issue: 3 Pages: 965-1006 Published: 2000 Times Cited: 544

2. Title: PULSED-LASER EVAPORATION TECHNIQUE FOR DEPOSITION OF THIN-FILMS - PHYSICS AND THEORETICAL-MODEL Author(s): SINGH, RK; NARAYAN, JSource: PHYSICAL REVIEW B Volume: 41 Issue: 13 Pages: 8843-8859 Part: A Published: MAY 1 1990 Times Cited: 512

3. Title: Optical and structural properties of epitaxial MgxZn1-xO alloys Author(s): Sharma, AK; Narayan, J; Muth, JF, et al.Source: APPLIED PHYSICS LETTERS Volume: 75 Issue: 21 Pages: 3327-3329 Published: NOV 22 1999 Times Cited: 186

4. Title: LASER ANNEALING OF BORON-IMPLANTED SILICON Author(s): YOUNG, RT; WHITE, CW; CLARK, GJ, et al.Source: APPLIED PHYSICS LETTERS Volume: 32 Issue: 3 Pages: 139-141 Published: 1978 Times Cited: 173

5. Title: THEORETICAL-MODEL FOR DEPOSITION OF SUPERCONDUCTING THIN-FILMS USING PULSED LASER EVAPORATION TECHNIQUE Author(s): SINGH, RK; HOLLAND, OW; NARAYAN, JSource: JOURNAL OF APPLIED PHYSICS Volume: 68 Issue: 1 Pages: 233-247 Published: JUL 1 1990 Times Cited: 156

6. Title: FORMATION OF THIN SUPERCONDUCTING FILMS BY THE LASER PROCESSING METHOD Author(s): NARAYAN, J; BIUNNO, N; SINGH, R, et al.Source: APPLIED PHYSICS LETTERS Volume: 51 Issue: 22 Pages: 1845-1847 Published: NOV 30 1987 Times Cited: 153

7. Title: EPITAXIAL-GROWTH OF TIN FILMS ON (100) SILICON SUBSTRATES BY LASER PHYSICAL VAPOR-DEPOSITION Author(s): NARAYAN, J; TIWARI, P; CHEN, X, et al.Source: APPLIED PHYSICS LETTERS Volume: 61 Issue: 11 Pages: 1290-1292 Published: SEP 14 1992 Times Cited: 138

30

http://apps.isiknowledge.com/CitingArticles.do?product=UA&SID=4ACjeoa22g7a496hBbD&search_mode=CitingArticles&parentQid=1&parentDoc=7&db_id=WOS&recid=80890580

http://apps.isiknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=1&SID=4ACjeoa22g7a496hBbD&page=1&doc=7&colname=WOS

















javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

8. Title: INSITU PROCESSING OF EPITAXIAL Y-BA-CU-O HIGH-TC SUPERCONDUCTING FILMS ON (100) SRTIO3 AND (100) YS-ZRO2 SUBSTRATES AT 500-650-DEGREES-C Author(s): SINGH, RK; NARAYAN, J; SINGH, AK, et al.Source: APPLIED PHYSICS LETTERS Volume: 54 Issue: 22 Pages: 2271-2273 Published: MAY 29 1989 Times Cited: 130

9. Title: Defects and interfaces in epitaxial ZnO/alpha-Al2O3 and AlN/ZnO/alpha-Al2O3, heterostructures Author(s): Narayan, J; Dovidenko, K; Sharma, AK, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 84 Issue: 5 Pages: 2597-2601 Published: SEP 1 1998 Times Cited: 127

10. Title: Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films Author(s): Tiwari, A; Jin, C; Kvit, A, et al.Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 6-7 Pages: 371-374 Published: 2002 Times Cited: 125

11. Title: Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition Author(s): Muth, JF; Kolbas, RM; Sharma, AK, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 85 Issue: 11 Pages: 7884-7887 Published: JUN 1 1999 Times Cited: 123

12. Title: Zn0.9Co0.1O-based diluted magnetic semiconducting thin films Author(s): Ramachandran, S; Tiwari, A; Narayan, JSource: APPLIED PHYSICS LETTERS Volume: 84 Issue: 25 Pages: 5255-5257 Published: JUN 21 2004 Times Cited: 120

13. Title: On the grain size softening in nanocrystalline materials Author(s): Conrad, H; Narayan, JSource: SCRIPTA MATERIALIA Volume: 42 Issue: 11 Pages: 1025-1030 Published: MAY 31 2000 Times Cited: 109

14. Title: INTERFACE STRUCTURES DURING SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SEMICONDUCTORS AND A CRYSTALLIZATION MODEL Author(s): NARAYAN, JSource: JOURNAL OF APPLIED PHYSICS Volume: 53 Issue: 12 Pages: 8607-8614

31



















javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

Published: 1982 Times Cited: 106

15. Title: SPECTROSCOPIC ELLIPSOMETRY - A NEW TOOL FOR NONDESTRUCTIVE DEPTH PROFILING AND CHARACTERIZATION OF INTERFACES Author(s): MCMARR, PJ; VEDAM, K; NARAYAN, JSource: JOURNAL OF APPLIED PHYSICS Volume: 59 Issue: 3 Pages: 694-701 Published: FEB 1 1986 Times Cited: 103

16. Title: Refractive indices and absorption coefficients of MgxZn1-xO alloys Author(s): Teng, CW; Muth, JF; Ozgur, U, et al.Source: APPLIED PHYSICS LETTERS Volume: 76 Issue: 8 Pages: 979-981 Published: FEB 21 2000 Times Cited: 102

17. Title: EPITAXIAL-GROWTH OF ALN THIN-FILMS ON SILICON(111) SUBSTRATES BY PULSED-LASER DEPOSITION Author(s): VISPUTE, RD; NARAYAN, J; WU, H, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 77 Issue: 9 Pages: 4724-4728 Published: MAY 1 1995 Times Cited: 100

18. Title: HIGH-QUALITY EPITAXIAL ALUMINUM NITRIDE LAYERS ON SAPPHIRE BY PULSED-LASER DEPOSITION Author(s): VISPUTE, RD; WU, H; NARAYAN, JSource: APPLIED PHYSICS LETTERS Volume: 67 Issue: 11 Pages: 1549-1551 Published: SEP 11 1995 Times Cited: 95

19. Title: Domain epitaxy: A unified paradigm for thin film growth Author(s): Narayan, J; Larson, BCSource: JOURNAL OF APPLIED PHYSICS Volume: 93 Issue: 1 Pages: 278-285 Published: JAN 1 2003 Times Cited: 94

20. Title: P-N-JUNCTION FORMATION IN BORON-DEPOSITED SILICON BY LASER-INDUCED DIFFUSION Author(s): NARAYAN, J; YOUNG, RT; WOOD, RF, et al.Source: APPLIED PHYSICS LETTERS Volume: 33 Issue: 4 Pages: 338-340 Published: 1978 Times Cited: 94

21. Title: ION-ASSISTED LASER PROCESSING OF CN(X) FILMS Author(s): NARAYAN, J; REDDY, J; BIUNNO, N, et al.

32



















javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Volume: 26 Issue: 1 Pages: 49-53 Published: AUG 1994 Times Cited: 93

22. Title: NONDESTRUCTIVE DEPTH PROFILING BY SPECTROSCOPIC ELLIPSOMETRY Author(s): VEDAM, K; MCMARR, PJ; NARAYAN, JSource: APPLIED PHYSICS LETTERS Volume: 47 Issue: 4 Pages: 339-341 Published: 1985 Times Cited: 93

23. Title: THIN-FILM DEPOSITION BY A NEW LASER ABLATION AND PLASMA HYBRID TECHNIQUE Author(s): KRISHNASWAMY, J; RENGAN, A; NARAYAN, J, et al.Source: APPLIED PHYSICS LETTERS Volume: 54 Issue: 24 Pages: 2455-2457 Published: JUN 12 1989 Times Cited: 90

24. Title: SUBSURFACE HEATING EFFECTS DURING PULSED LASER EVAPORATION OF MATERIALS Author(s): SINGH, RK; BHATTACHARYA, D; NARAYAN, JSource: APPLIED PHYSICS LETTERS Volume: 57 Issue: 19 Pages: 2022-2024 Published: NOV 5 1990 Times Cited: 86

25. Title: LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS Author(s): WHITE, CW; NARAYAN, J; YOUNG, RTSource: SCIENCE Volume: 204 Issue: 4392 Pages: 461-468 Published: 1979 Times Cited: 83

26. Title: ON EPITAXIAL-GROWTH OF DIAMOND FILMS ON (100) SILICON SUBSTRATES Author(s): NARAYAN, J; SRIVATSA, AR; PETERS, M, et al.Source: APPLIED PHYSICS LETTERS Volume: 53 Issue: 19 Pages: 1823-1825 Published: NOV 7 1988 Times Cited: 82

27. Title: Aluminum nitride films on different orientations of sapphire and silicon Author(s): Dovidenko, K; Oktyabrsky, S; Narayan, J, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 79 Issue: 5 Pages: 2439-2445 Published: MAR 1 1996 Times Cited: 80

28. Title: HIGH-TEMPERATURE AND IONIZATION-INDUCED EFFECTS IN LITHIUM-DOPED MGO SINGLE-CRYSTALS Author(s): CHEN, Y; TOHVER, HT; NARAYAN, J, et al.

33


















javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

Source: PHYSICAL REVIEW B Volume: 16 Issue: 12 Pages: 5535-5542 Published: 1977

Times Cited: 77

29. Title: CHARACTERISTICS OF ION-IMPLANTATION DAMAGE AND ANNEALING PHENOMENA IN SEMICONDUCTORS Author(s): NARAYAN, J; HOLLAND, OWSource: JOURNAL OF THE ELECTROCHEMICAL SOCIETY Volume: 131 Issue: 11 Pages: 2651-2662 Published: 1984 Times Cited: 76

30. Title: ENHANCEMENT OF NUCLEATION AND ADHESION OF DIAMOND FILMS ON COPPER, STAINLESS-STEEL, AND SILICON SUBSTRATES Author(s): NARAYAN, J; GODBOLE, VP; MATERA, G, et al.Source: JOURNAL OF APPLIED PHYSICS Volume: 71 Issue: 2 Pages: 966-971 Published: JAN 15 1992 Times Cited: 75

31. Title: ELECTRON-MICROSCOPE OBSERVATION OF SHEAR CRACKS IN STAINLESS-STEEL SINGLE-CRYSTALS Author(s): OHR, SM; NARAYAN, JSource: PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES Volume: 41 Issue: 1 Pages: 81-89 Published: 1980 Times Cited: 72

32. Title: SOLID-PHASE-EPITAXIAL GROWTH AND FORMATION OF METASTABLE ALLOYS IN ION-IMPLANTED SILICON Author(s): NARAYAN, J; HOLLAND, OW; APPLETON, BRSource: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Volume: 1 Issue: 4 Pages: 871-887 Published: 1983 Times Cited: 71

33. Title: ATOMIC-STRUCTURE OF ION-IMPLANTATION DAMAGE AND PROCESS OF AMORPHIZATION IN SEMICONDUCTORS Author(s): NARAYAN, J; FATHY, D; OEN, OS, et al.Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS Volume: 2 Issue: 3 Pages: 1303-1308 Published: 1984 Times Cited: 68

34. Title: LASER METHOD FOR SYNTHESIS AND PROCESSING OF CONTINUOUS DIAMOND FILMS ON NONDIAMOND SUBSTRATES Author(s): NARAYAN, J; GODBOLE, VP; WHITE, CWSource: SCIENCE Volume: 252 Issue: 5004 Pages: 416-418 Published: APR 19 1991 Times Cited: 61

34




















javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

35. Title: Preparation and mechanical properties of composite diamond-like carbon thin films Author(s): Wei, Q; Narayan, RJ; Sharma, AK, et al.Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS Volume: 17 Issue: 6 Pages: 3406-3414 Published: NOV-DEC 1999 Times Cited: 60

36. Title: DISLOCATIONS, TWINS, AND GRAIN-BOUNDARIES IN CVD DIAMOND THIN-FILMS - ATOMIC-STRUCTURE AND PROPERTIES Author(s): NARAYAN, JSource: JOURNAL OF MATERIALS RESEARCH Volume: 5 Issue: 11 Pages: 2414-2423 Published: NOV 1990 Times Cited: 60

37. Title: PULSED LASER MELTING OF AMORPHOUS-SILICON LAYERS Author(s): NARAYAN, J; WHITE, CWSource: APPLIED PHYSICS LETTERS Volume: 44 Issue: 1 Pages: 35-37 Published: 1984 Times Cited: 60

38. Title: RAPID THERMAL ANNEALING OF ION-IMPLANTED SEMICONDUCTORS Author(s): NARAYAN, J; HOLLAND, OWSource: JOURNAL OF APPLIED PHYSICS Volume: 56 Issue: 10 Pages: 2913-2921 Published: 1984 Times Cited: 60

39. Title: EPITAXIAL-GROWTH IN LARGE-LATTICE-MISMATCH SYSTEMS Author(s): ZHELEVA, T; JAGANNADHAM, K; NARAYAN, JSource: JOURNAL OF APPLIED PHYSICS Volume: 75 Issue: 2 Pages: 860-871 Published: JAN 15 1994 Times Cited: 59

40. Title: A NOVEL METHOD FOR SIMULATING LASER-SOLID INTERACTIONS IN SEMICONDUCTORS AND LAYERED STRUCTURES Author(s): SINGH, RK; NARAYAN, JSource: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Volume: 3 Issue: 3 Pages: 217-230 Published: AUG 1989 Times Cited: 56

41. Title: ATOMIC-STRUCTURE OF DISLOCATIONS IN SILICON, GERMANIUM AND DIAMOND Author(s): NANDEDKAR, AS; NARAYAN, JSource: PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES Volume: 61 Issue: 6 Pages: 873-891 Published: JUN 1990

35

















javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

Times Cited: 55

42. Title: COMPARATIVE-STUDY OF LASER AND THERMAL ANNEALING OF BORON-IMPLANTED SILICON Author(s): NARAYAN, J; YOUNG, RT; WHITE, CWSource: JOURNAL OF APPLIED PHYSICS Volume: 49 Issue: 7 Pages: 3912-3917 Published: 1978 Times Cited: 55

43. Title: Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates Author(s): Narayan, J; Sharma, AK; Kvit, A, et al.Source: SOLID STATE COMMUNICATIONS Volume: 121 Issue: 1 Pages: 9-13 Published: 2002 Times Cited: 54

44. Title: EFFECT OF THE CHEMICAL NATURE OF TRANSITION-METAL SUBSTRATES ON CHEMICAL-VAPOR-DEPOSITION OF DIAMOND Author(s): CHEN, X; NARAYAN, JSource: JOURNAL OF APPLIED PHYSICS Volume: 74 Issue: 6 Pages: 4168-4173 Published: SEP 15 1993 Times Cited: 54

45. Title: RAPID THERMAL ANNEALING OF ARSENIC AND BORON-IMPLANTED SILICON Author(s): NARAYAN, J; HOLLAND, OW; EBY, RE, et al.Source: APPLIED PHYSICS LETTERS Volume: 43 Issue: 10 Pages: 957-959 Published: 1983 Times Cited: 53

46. Title: CHARACTERIZATION OF DAMAGE IN ION-IMPLANTED GE Author(s): APPLETON, BR; HOLLAND, OW; NARAYAN, J, et al.Source: APPLIED PHYSICS LETTERS Volume: 41 Issue: 8 Pages: 711-712 Published: 1982 Times Cited: 50

47. Title: ATOMIC-STRUCTURE OF DISLOCATIONS AND DIPOLES IN SILICON Author(s): NANDEDKAR, AS; NARAYAN, JSource: PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES Volume: 56 Issue: 5 Pages: 625-639 Published: NOV 1987 Times Cited: 49

48. Title: DIAMOND, DIAMOND-LIKE AND TITANIUM NITRIDE BIOCOMPATIBLE COATINGS FOR HUMAN-BODY PARTS Author(s): NARAYAN, J; FAN, WD; NARAYAN, RJ, et al.

36



















javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

javascript:void

Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Volume: 25 Issue: 1 Pages: 5-10 Published: JUN 1994 Times Cited: 48

49. Title: PULSED-LASER MELTING OF AMORPHOUS-SILICON - TIME-RESOLVED MEASUREMENTS AND MODEL-CALCULATIONS Author(s): LOWNDES, DH; WOOD, RF; NARAYAN, JSource: PHYSICAL REVIEW LETTERS Volume: 52 Issue: 7 Pages: 561-564 Published: 1984 Times Cited: 48

37


http://apps.isiknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=1&SID=4ACjeoa22g7a496hBbD&page=1&doc=50&colname=WOS&cacheurlFromRightClick=no

http://apps.isiknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=1&SID=4ACjeoa22g7a496hBbD&page=1&doc=50&colname=WOS&cacheurlFromRightClick=no


javascript:void

javascript:void

Recent Papers in Acta Materialia and Scripta Materialia1. On the grain size softening in nanocrystalline materials (Citation classic)

Author(s): Conrad H, Narayan J Source: SCRIPTA MATERIALIA Volume: 42 Issue: 11 Pages: 1025-1030 Published: MAY 31 2000

38

http://apps.isiknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=4B6@NDNm9dF27MPPLkO&page=1&doc=3&cacheurlFromRightClick=no

2. Preparation of bulk ultrafine-grained and nanostructured Zn, Al and their alloys by in situ consolidation of powders during mechanical attrition Author(s): Zhang X, Wang H, Kassem M, et al.Source: SCRIPTA MATERIALIA Volume: 46 Issue: 9 Pages: 661-665 Published: MAY 10 2002

3. Synthesis of bulk nanostructured Zn by combinations of cryomilling and powder consolidation by room temperature milling: optimizing mechanical properties Author(s): Zhu XK, Zhang X, Wang H, et al.Source: SCRIPTA MATERIALIA Volume: 49 Issue: 5 Pages: 429-433 Published: SEP 2003

4. Thin film epitaxy and structure property correlations for non-polar ZnO films Author(s): Pant P, Budai JD, Aggarwal R, et al.Source: ACTA MATERIALIA Volume: 57 Issue: 15 Pages: 4426-4431 Published: SEP 2009

5. Formation of single and multiple deformation twins in nanocrystalline fcc metals Author(s): Zhu YT, Narayan J, Hirth JP, et al.Source: ACTA MATERIALIA Volume: 57 Issue: 13 Pages: 3763-3770 Published: AUG 2009

6. Magnetic properties and their dependence on deposition parameters of Co/Al2O3 multilayers grown by pulsed laser deposition Author(s): Aggarwal R, Nori S, Jin CM, et al.Source: ACTA MATERIALIA Volume: 57 Issue: 6 Pages: 2040-2046 Published: APR 2009

7. Mechanisms for grain size hardening and softening in Zn Author(s): Conrad H, Narayan J Source: ACTA MATERIALIA Volume: 50 Issue: 20 Pages: 5067-5078 Published: DEC 3 2002

8. Studies of deformation mechanisms in ultra-fine-grained and nanostructured Zn Author(s): Zhang X, Wang H, Scattergood RO, et al.Source: ACTA MATERIALIA Volume: 50 Issue: 19 Pages: 4823-4830 Published: NOV 14 2002

9. Modulated oscillatory hardening and dynamic recrystallization in cryomilled nanocrystalline Zn Author(s): Zhang X, Wang H, Scattergood RO, et al.Source: ACTA MATERIALIA Volume: 50 Issue: 16 Pages: 3995-4004 Published: SEP 20 2002

10. Mechanical properties of cyromilled nanocrystalline Zn studied by the miniaturized disk bend test Author(s): Zhang X, Wang H, Scattergood RO, et al.Source: ACTA MATERIALIA Volume: 50 Issue: 13 Pages: 3527-3533 Published: AUG 1 2002

11. Evidence for the formation mechanism of nanoscale microstructures in cryomilled Zn powder Author(s): Zhang X, Wang H, Narayan J, et al.Source: ACTA MATERIALIA Volume: 49 Issue: 8 Pages: 1319-1326 Published: MAY 8 2001

12. Nonpolar ZnO film growth and mechanism for anisotropic in-plane strain relaxationAuthor(s): P. Pant, J. Budai, and J. NarayanActa Materialia Volume 58 (2009).

39

http://apps.isiknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=3&SID=4B6@NDNm9dF27MPPLkO&page=1&doc=8













Nanomaterials Breakthrough announced by NSF: Google: jagdish Narayan not so spotty materialhttp://www.nsf.gov/news/news_summ.jsp?cntn_id=100427www.physorg.com/pdf1020.pdfhttp://www.physorg.com/news175252581.htmlhttp://www.innovations-report.com/html/reports/process_engineering/report-33003.htmlhttp://www.phschool.com/science/science_news/articles/falling_into_place.htmlhttp://radio.weblogs.com/0105910/2004/09/06.htmlhttp://www.primidi.com/Self-assembling_3D_Nanostructureshttp://pda.physorg.com/materials-jagdish-researchers_news1020.html

Google: jagdish Narayan mgo-nihttp://news.ncsu.edu/releases/degraffnarayan09/http://ceramics.org/ceramictechtoday/tag/jagdish-jay-narayan/http://asmcommunity.asminternational.org/portal/site/www/NewsItem/?vgnextoid=d1325e47a5c74210VgnVCM100000621e010aRCRDhttp://www.nanotech-now.com/news.cgi?story_id=35082http://www.patentstorm.us/patents/4376755/description.htmlhttp://inderscience.metapress.com/app/home/contribution.asp?referrer=parent&backto=issue,5,11;journal,4,25;linkingpublicationresults,1:110881,1http://localtechwire.com/business/local_tech_wire/news/blogpost/6337123/http://www.rdmag.com/News/2009/10/Materials-Material-Developed-That-Could-Boost-Data-Storage/http://www.gizmag.com/nanomaterial-boosts-data-storage-fuel-efficiency/13176/http://www.sciencedaily.com/releases/2009/10/091020111614.htmhttp://www.scientificcomputing.com/news-HPC-New-Material-Could-Boost-Data-Storage-102109.aspxhttp://www.storagenewsletter.com/news/flash/nc-state-fingernail-size-chip-to-store-1tbhttp://www.scienceblog.com/cms/new-material-could-boost-data-storage-save-energy-26400.htmlhttp://www.infoniac.com/hi-tech/latest-invention-fingernail-size-chip-with-1tb-capacity.html

40

http://www.infoniac.com/hi-tech/latest-invention-fingernail-size-chip-with-1tb-capacity.html

http://www.infoniac.com/hi-tech/latest-invention-fingernail-size-chip-with-1tb-capacity.html

http://www.scienceblog.com/cms/new-material-could-boost-data-storage-save-energy-26400.html

http://www.scienceblog.com/cms/new-material-could-boost-data-storage-save-energy-26400.html

http://www.storagenewsletter.com/news/flash/nc-state-fingernail-size-chip-to-store-1tb

http://www.storagenewsletter.com/news/flash/nc-state-fingernail-size-chip-to-store-1tb

http://www.scientificcomputing.com/news-HPC-New-Material-Could-Boost-Data-Storage-102109.aspx

http://www.scientificcomputing.com/news-HPC-New-Material-Could-Boost-Data-Storage-102109.aspx

http://www.sciencedaily.com/releases/2009/10/091020111614.htm

http://www.gizmag.com/nanomaterial-boosts-data-storage-fuel-efficiency/13176/

http://www.rdmag.com/News/2009/10/Materials-Material-Developed-That-Could-Boost-Data-Storage/

http://www.rdmag.com/News/2009/10/Materials-Material-Developed-That-Could-Boost-Data-Storage/

http://localtechwire.com/business/local_tech_wire/news/blogpost/6337123/

http://inderscience.metapress.com/app/home/contribution.asp?referrer=parent&backto=issue,5,11;journal,4,25;linkingpublicationresults,1:110881,1



http://www.patentstorm.us/patents/4376755/description.html

http://www.nanotech-now.com/news.cgi?story_id=35082

http://asmcommunity.asminternational.org/portal/site/www/NewsItem/?vgnextoid=d1325e47a5c74210VgnVCM100000621e010aRCRD

http://asmcommunity.asminternational.org/portal/site/www/NewsItem/?vgnextoid=d1325e47a5c74210VgnVCM100000621e010aRCRD

http://ceramics.org/ceramictechtoday/tag/jagdish-jay-narayan/

http://news.ncsu.edu/releases/degraffnarayan09/

http://pda.physorg.com/materials-jagdish-researchers_news1020.html

http://www.primidi.com/Self-assembling_3D_Nanostructures

http://radio.weblogs.com/0105910/2004/09/06.html

http://www.phschool.com/science/science_news/articles/falling_into_place.html

http://www.innovations-report.com/html/reports/process_engineering/report-33003.html

http://www.innovations-report.com/html/reports/process_engineering/report-33003.html

http://www.physorg.com/news175252581.html

http://www.physorg.com/pdf1020.pdf

http://www.nsf.gov/news/news_summ.jsp?cntn_id=100427

MOST SIGNIFICANT CONTRIBUTION/ACCOMPLISHMENT: · Web viewPAT. NO. Title 1 7,122,841 Bonding pad for...

Documents

Transcript of MOST SIGNIFICANT CONTRIBUTION/ACCOMPLISHMENT: · Web viewPAT. NO. Title 1 7,122,841 Bonding pad for...