J2N3819

2N3819Vishay Siliconix

Document Number: 70238S–04028—Rev. D ,04-Jun-01

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N-Channel JFET

VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)

–8 –25 2 2

Excellent High-Frequency Gain:Gps 11 dB @ 400 MHz

Very Low Noise: 3 dB @ 400 MHz Very Low Distortion High ac/dc Switch Off-Isolation High Gain: AV = 60 @ 100 A

Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification

High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches

The 2N3819 is a low-cost, all-purpose JFET which offers goodperformance at mid-to-high frequencies. It features low noiseand leakage and guarantees high gain at 100 MHz.

Its TO-226AA (TO-92) package is compatible with varioustape-and-reel options for automated assembly (seePackaging Information). For similar products in TO-206AF(TO-72) and TO-236 (SOT-23) packages, see the2N4416/2N4416A/SST4416 data sheet.

1

TO-226AA(TO-92)

Top View

S

D

G 2

3

Gate-Source/Gate-Drain Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Forward Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature –55 to 150C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature –55 to 150C. . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature (1/16” from case for 10 sec.) 300C. . . . . . . . . . . . . . . . . . .

Power Dissipationa 350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Notesa. Derate 2.8 mW/C above 25C


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Limits

Parameter Symbol Test Conditions Min Typa Max Unit

Static

Gate-Source Breakdown Voltage V(BR)GSS IG = –1 A , VDS = 0 V –25 –35

Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 2 nA –3 –8V

Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 2 10 20 mA

VGS = –15 V, VDS = 0 V –0.002 –2 nAGate Reverse Current IGSS TA = 100C –0.002 –2 A

Gate Operating Currentc IG VDG = 10 V, ID = 1 mA –20

Drain Cutoff Current ID(off) VDS = 10 V, VGS = –8 V 2pA

Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 150

Gate-Source Voltage VGS VDS = 15 V, ID = 200 A –0.5 –2.5 –7.5

Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7V

Dynamic

f = 1 kHz 2 5.5 6.5Common-Source Forward Transconductancec gfs VDS = 15 V

V = 0 Vf = 100 MHz 1.6 5.5

mS

Common-Source Output Conductancec gos

VGS = 0 Vf = 1 kHz 25 50 S

Common-Source Input Capacitance Ciss 2.2 8

Common-Source Reverse Transfer Capacitance CrssVDS = 15 V, VGS = 0 V, f = 1 MHz

0.7 4pF

Equivalent Input Noise Voltagec en VDS = 10 V, VGS = 0 V, f = 100 Hz 6 nV⁄√Hz

Notesa. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NHb. Pulse test: PW 300 s, duty cycle 2%.c. This parameter not registered with JEDEC.

On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage

500

0 –10–6

300

0

100

60

0

rDS

gos

rDS @ ID = 1 mA, VGS = 0 Vgos @ VDS = 10 V, VGS = 0 Vf = 1 kHz

Drain Current and Transconductancevs. Gate-Source Cutoff Voltage

20

0 –10

0

10

0

IDSS

gfs

VGS(off) – Gate-Source Cutoff Voltage (V)

80

40

20

400

100

200

–2 –4 –8

VGS(off) – Gate-Source Cutoff Voltage (V)

6

8

4

2

–6–2 –4 –8

12

16

4

8

IDSS @ VDS = 15 V, VGS = 0 Vgfs @ VDS = 15 V, VGS = 0 Vf = 1 kHz

gos – Output C

onductance (S)

I DS

S –

Sat

urat

ion

Dra

in C

urre

nt (

mA

)

r DS

(on)

– D

rain

-Sou

rce

On-

Res

ista

nce

( Ω

)g

fs – Forw

ard Transconductance (mS

)



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10

0

2

8

6

4

Gate Leakage Current

0 10 20

5 mA

0.1 mA

100 nA

10 nA

1 nA

100 pA

10 pA

1 pA

0.1 pA

0.1 mA

IGSS @ 25C

TA = 25C

TA = 125C

5 mA

IGSS @125C

Output Characteristics Output Characteristics

Common-Source Forward Transconductancevs. Drain Current

0.1 1 10

10

2

0

VGS(off) = –3 V

TA = –55C

125C

10

0 4 100

–0.2 V

–0.4 V

–0.6 V

–0.8 V

–1.2 V–1.0 V

VGS = 0 V

15

0 100

–0.6 V

–0.9 V

–1.2 V

–1.5 V

–1.8 V

VGS = 0 V

–0.3 V

VDG – Drain-Gate Voltage (V) ID – Drain Current (mA)

VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)

VGS – Gate-Source Voltage (V)

Transfer Characteristics

VGS(off) = –2 V

TA = –55C

125C


Transfer Characteristics

TA = –55C

125C

VGS(off) = –3 V

8

6

4

VDS = 10 Vf = 1 kHz

VGS(off) = –2 V VGS(off) = –3 V

2

8

6

4

2 6 8 42 6 8

3

12

9

6

VDS = 10 V VDS = 10 V

10

0

2

8

6

4

0 –0.8 –2 0 –3–0.4 –1.2 –1.6 –1.2–0.6 –1.8 –2.4

1 mA

1 mA

25C

25C25C

–1.4 V

g fs

– F

orw

ard

Tran

scon

duct

ance

(m

S)

I G –

Gat

e Le

akag

eI D

– D

rain

Cur

rent

(m

A)

I D –

Dra

in C

urre

nt (

mA

)I D

– D

rain

Cur

rent

(m

A)

I D –

Dra

in C

urre

nt (

mA

)


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Transconductance vs. Gate-Source Voltage10

0 –0.8 –2

8

0

VGS(off) = –2 V

TA = –55C

125C


Transconductance vs. Gate-Source Voltgage10

–3–0.600

TA = –55C

125C

VGS(off) = –3 V

ID – Drain Current (mA) ID – Drain Current (mA)

On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current

0.1 1 10

300

0

TA = –55C

–3 V

VGS(off) = –2 V

100.1

100

0

Assume VDD = 15 V, VDS = 5 V

RL

10 VID

VGS(off) = –2 V

–3 V

Common-Source Input Capacitancevs. Gate-Source Voltage

Common-Source Reverse FeedbackCapacitance vs. Gate-Source Voltage

5

0 –20–40

f = 1 MHz

VDS = 0 V

VDS = 10 V

3.0

0 –200

VDS = 0 V

VDS = 10 V

VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)

f = 1 MHz

VDS = 10 Vf = 1 kHz

VDS = 10 Vf = 1 kHz

6

4

2

240

180

120

60

8

6

4

2

80

60

40

20

1

–0.4 –1.6–1.2 –1.2 –1.8 –2.4

4

3

2

1

–8 –12 –16 –4 –8 –12 –16

2.4

1.8

1.2

0.6

AV

gfs RL

1 RLgos

25C 25C

g fs

– F

orw

ard

Tran

scon

duct

ance

(m

S)

g fs

– F

orw

ard

Tran

scon

duct

ance

(m

S)

r DS

(on)

– D

rain

-Sou

rce

On-

Res

ista

nce

( Ω

)

AV –

Vol

tage

Gai

n

Cis

s –

Inpu

t Cap

acita

nce

(pF

)

Crs

s –

Rev

erse

Fee

dbac

k C

apac

itanc

e (p

F)



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Reverse Admittance Output Admittance

Input Admittance Forward Admittance100

10

1

0.1

100 1000

bis

gis

TA = 25CVDS = 15 VVGS = 0 VCommon Source

(mS

)

100

10

1

0.1

100


(mS

)

–bis

gfs

10

1

0.1

0.01


–brs

–grs

10

1

0.1

0.01


bos

gos

f – Frequency (MHz) f – Frequency (MHz)

f – Frequency (MHz)f – Frequency (MHz)

Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current

10 100 1 k 100 k10 k

20

0

ID = 5 mA

VDS = 10 V

20

00.1 1 10

TA = –55C

125C

VGS(off) = –3 V

ID – Drain Current (mA)f – Frequency (Hz)

(mS

)

(mS

)

200 500 1000200 500

100 1000 100200 500 1000200 500

VDS = 10 Vf = 1 kHz

VGS(off) = –3 V

16

12

8

4

16

12

8

4ID = IDSS

25C

en –

Noi

se V

olta

ge n

V/

Hz

g os

– O

utpu

t Con

duct

ance

(S

)

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J2N3819

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