IRF9Z24NHEXFET® Power MOSFET

PD -9.1484B

Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide variety of applications.

The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220contribute to its wide acceptance throughout theindustry.

Parameter Max. UnitsID @ TC = 25°C Continuous Drain Current, VGS @ -10V -12ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -8.5 AIDM Pulsed Drain Current -48PD @TC = 25°C Power Dissipation 45 W

Linear Derating Factor 0.30 W/°CVGS Gate-to-Source Voltage ± 20 VEAS Single Pulse Avalanche Energy 96 mJIAR Avalanche Current -7.2 AEAR Repetitive Avalanche Energy 4.5 mJdv/dt Peak Diode Recovery dv/dt -5.0 V/nsTJ Operating Junction and -55 to + 175TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C

Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter Typ. Max. UnitsRθJC Junction-to-Case ––– 3.3RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/WRθJA Junction-to-Ambient ––– 62

Thermal Resistance

VDSS = -55V

RDS(on) = 0.175Ω

ID = -12A

TO-220AB

l Advanced Process Technologyl Dynamic dv/dt Ratingl 175°C Operating Temperaturel Fast Switchingl P-Channell Fully Avalanche RatedDescription

8/27/97

S

D

G

IRF9Z24N

Parameter Min. Typ. Max. Units ConditionsIS Continuous Source Current MOSFET symbol

(Body Diode)––– –––

showing theISM Pulsed Source Current integral reverse

(Body Diode) ––– –––

p-n junction diode.VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -7.2A, VGS = 0V trr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = -7.2AQrr Reverse RecoveryCharge ––– 84 130 µC di/dt = -100A/µs

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Parameter Min. Typ. Max. Units ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mARDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.175 Ω VGS = -10V, ID = -7.2A VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µAgfs Forward Transconductance 2.5 ––– ––– S VDS = -25V, ID = -7.2A

––– ––– -25µA

VDS = -55V, VGS = 0V––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20VGate-to-Source Reverse Leakage ––– ––– -100

nAVGS = -20V

Qg Total Gate Charge ––– ––– 19 ID = -7.2AQgs Gate-to-Source Charge ––– ––– 5.1 nC VDS = -44VQgd Gate-to-Drain ("Miller") Charge ––– ––– 10 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 13 ––– VDD = -28Vtr Rise Time ––– 55 ––– ID = -7.2Atd(off) Turn-Off Delay Time ––– 23 ––– RG = 24Ωtf Fall Time ––– 37 ––– RD = 3.7Ω, See Fig. 10

Between lead,––– –––

6mm (0.25in.)from packageand center of die contact

Ciss Input Capacitance ––– 350 ––– VGS = 0VCoss Output Capacitance ––– 170 ––– pF VDS = -25VCrss Reverse Transfer Capacitance ––– 92 ––– ƒ = 1.0MHz, See Fig. 5

nH

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

LD Internal Drain Inductance

LS Internal Source Inductance ––– –––

IGSS

ns

4.5

7.5

IDSS Drain-to-Source Leakage Current

Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )

ISD ≤ -7.2A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C

Notes:

Starting TJ = 25°C, L = 3.7mH RG = 25Ω, IAS = -7.2A. (See Figure 12)

Pulse width ≤ 300µs; duty cycle ≤ 2%.

S

D

G

Source-Drain Ratings and Characteristics

A

S

D

G

-12

-48

IRF9Z24N

Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output Characteristics,Fig 1. Typical Output Characteristics,

Fig 3. Typical Transfer Characteristics

1

1 0

1 0 0

0 . 1 1 1 0 1 0 0

D

D S

20µs PULS E W IDTH T = 25°C

A

-I

, D

rain

-to-

Sou

rce

Cur

rent

(A

)

-V , Drain-to-Source Voltage (V)

VGS TOP - 15V - 10V - 8 .0V - 7 .0V - 6 .0V - 5 .5V - 5 .0V BOTT OM - 4. 5V

-4.5V

c

1

10

100

0.1 1 10 100D

D S

A-I

,

Dra

in-t

o-S

ourc

e C

urr

ent

(A

)

-V , Dra in-to-Source Voltage (V )

VGS TOP - 15V - 10V - 8 .0V - 7 .0V - 6 .0V - 5 .5V - 5 .0V BOTT OM - 4. 5V

-4.5V 20µs PULSE W IDTH T = 175°CC

1

1 0

1 0 0

4 5 6 7 8 9 1 0

T = 25°CJ

G S

D

A

-I

, D

rain

-to-

So

urce

Cur

rent

(A

)

-V , Ga te-to-So urce Vol tage (V )

V = -2 5V 20µs P ULS E W IDT H

DS

T = 175°CJ

0 . 0

0 . 5

1 . 0

1 . 5

2 . 0

- 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0

JT , Junction Temperature (°C)

R

,

Dra

in-t

o-S

ourc

e O

n R

esi

stan

ceD

S(o

n)(N

orm

aliz

ed)

A V = -10V GS

I = -12AD

J

J

IRF9Z24N

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 7. Typical Source-Drain DiodeForward Voltage

0

4

8

12

16

20

0 5 10 15 20 25

GG

S

A

-V

,

Ga

te-t

o-S

ourc

e V

olta

ge (

V)

Q , Tota l Gate Charge (nC)

FO R TEST CIRCUIT SEE F IGURE 13

I = -7.2A

V = -44V V = -28V

D

DS

DS

0 . 1

1

1 0

1 0 0

0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8

T = 25°C

T = 150°C

J

J

V = 0V GS

S D

SD

A

-I

, R

eve

rse

Dra

in C

urre

nt (

A)

-V , Source-to-Drain Voltage (V )

1

10

100

1 10 100

O PERATIO N IN THIS AREA LIM ITED BY RD S(o n)

10m sA

-I

, D

rain

Cur

rent

(A

)

-V , Dra in-to-Source Voltage (V )DS

D

1 0µs

100µ s

1m s

T = 25°C T = 175°C Single Pu lse

CJ

0

100

200

300

400

500

600

700

1 10 100

C,

Ca

paci

tanc

e (p

F)

D SV , Drain-to-Source Voltage (V)

A

V = 0V , f = 1MH zC = C + C , C SHORTEDC = CC = C + C

GSiss gs g d dsrss g doss ds gd

C is s

C o s s

C rs s

IRF9Z24N

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.Case Temperature

VDS

-10VPulse Width ≤ 1 µsDuty Factor ≤ 0.1 %

RD

VGS

VDD

RG

D.U.T.

+-

VDS

90%

10%

VGS

td(on) tr td(off) tf

0

3

6

9

1 2

2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5

CT , C ase Temperature (°C)

A

-I

, Dra

in C

urre

nt (

Am

ps)

D

0 . 0 1

0 . 1

1

1 0

0 . 0 0 0 0 1 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1

t , R ectan gular Pulse D uratio n (sec)1

thJC

D = 0 .5 0

0 .0 10 .0 2

0 .0 5

0 .1 0

0 .2 0

S IN G LE P U L S E(T H E R M A L R E S P O N S E )

A

Th

erm

al R

esp

on

se (

Z

)

P

t 2

1t

DM

Notes : 1. D uty fac tor D = t / t

2. P ea k T = P x Z + T

1 2

J DM th JC C

IRF9Z24N

Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche EnergyVs. Drain Current

QG

QGS QGD

VG

Charge

-10V

D.U.T.VDS

IDIG

-3mA

VGS

.3µF

50KΩ

.2µF12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V (BR)DSS

I AS

R G

IA S

0 .0 1Ωtp

D .U .T

LV D S

VD D

D R IV E RA

15V

-20V

0

50

100

150

200

250

25 50 75 100 125 150 175

J

E

,

Sin

gle

Pu

lse

Ava

lanc

he E

nerg

y (m

J)A

SA

Starting T , Junction Temperature (°C)

ITO P -2.9A -5.1AB OTTO M -7.2A

D

IRF9Z24NPeak Diode Recovery dv/dt Test Circuit

P.W.Period

di/dt

Diode Recoverydv/dt

Ripple ≤ 5%

Body Diode Forward DropRe-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D = P.W.Period

+

-

+

+

+-

-

-

RG

VDD

• dv/dt controlled by RG• ISD controlled by Duty Factor "D"• D.U.T. - Device Under Test

D.U.T*Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer

* Reverse Polarity of D.U.T for P-Channel

VGS

[ ]

[ ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 14. For P-Channel HEXFETS

IRF9Z24N

L E A D A S S IG N M E N T S 1 - G A T E 2 - D R A I N 3 - S O U R C E 4 - D R A I N

- B -

1 .3 2 (. 0 5 2 )1 .2 2 (. 0 4 8 )

3 X0 . 5 5 (. 0 2 2 )0 . 4 6 (. 0 1 8 )

2 .9 2 (. 1 1 5 )2 .6 4 (. 1 0 4 )

4 . 6 9 ( .1 8 5 )4 . 2 0 ( .1 6 5 )

3 X0 . 9 3 ( .0 3 7 )0 . 6 9 ( .0 2 7 )

4 . 0 6 (. 1 6 0 )3 . 5 5 (. 1 4 0 )

1 . 1 5 ( .0 4 5 ) M IN

6 . 4 7 (. 2 5 5 )6 . 1 0 (. 2 4 0 )

3 . 7 8 (. 1 4 9 )3 . 5 4 (. 1 3 9 )

- A -

1 0 . 5 4 (. 4 1 5 )1 0 . 2 9 (. 4 0 5 )2 . 8 7 ( .1 1 3 )

2 . 6 2 ( .1 0 3 )

1 5 . 2 4 ( .6 0 0 )1 4 . 8 4 ( .5 8 4 )

1 4 . 0 9 (.5 5 5 )1 3 . 4 7 (.5 3 0 )

3 X1 .4 0 (. 0 5 5 )1 .1 5 (. 0 4 5 )

2 . 5 4 ( .1 0 0 )

2 X

0 .3 6 ( . 0 1 4 ) M B A M

4

1 2 3

N O T E S :

1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B . 2 C O N T R O L L I N G D IM E N S IO N : I N C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

PART NU M BERIN TER NATION AL R EC TIF IER LO GO

EXAM PLE : THIS IS AN IRF1010 W ITH ASSEMBLY LO T CO DE 9B1M

ASSEM BLY LO T CO DE

D ATE C OD E (YYW W )YY = YEARW W = W EEK

9246IR F1010

9B 1M

A

Part Marking InformationTO-220AB

Package OutlineTO-220AB OutlineDimensions are shown in millimeters (inches)

PART NU M BERIN TER NATION AL R EC TIF IER LO GO

EXAM PLE : THIS IS AN IRF1010 W ITH ASSEMBLY LO T CO DE 9B1M

ASSEM BLY LO T CO DE

D ATE C OD E (YYW W )YY = YEARW W = W EEK

9246IR F1010

9B 1M

A

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