FQP27P06 Final DS Rev. C0 20130402 - Adafruit Industries · Symbol Parameter Test Conditions Min...
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©2001 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comFQP27P06 Rev.C0
FQP27P06P-Channel QFET® MOSFET- 60 V, - 27 A, 70 m
Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
• - 27 A, - 60 V, RDS(on) = 70 m (Max.) @ VGS = - 10 V, ID = - 13.5 A
• Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• 100% Avalanche Tested
• 175C Maximum Junction Temperature Rating
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQP27P06 UnitVDSS Drain-Source Voltage -60 V
ID Drain Current - Continuous (TC = 25°C) -27 A
- Continuous (TC = 100°C) -19.1 A
IDM Drain Current - Pulsed (Note 1) -108 A
VGSS Gate-Source Voltage 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 560 mJ
IAR Avalanche Current (Note 1) -27 A
EAR Repetitive Avalanche Energy (Note 1) 12 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/nsPD Power Dissipation (TC = 25°C) 120 W
- Derate above 25°C 0.8 W/°CTJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TLMaximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300 °C
Symbol Parameter FQP27P06 UnitRJC Thermal Resistance, Junction-to-Case, Max. 1.25 °C/W
RCS Thermal Resistance, Case-to-Sink, Typ. 0.5 °C/W
RJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W
●
●
●
▲▶
●
●
●
▲▶
S
D
G
SD
G
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©2001 Fairchild Semiconductor Corporation 2 www.fairchildsemi.comFQP27P06 Rev.C0
Elerical Characteristics TC = 25°C unless otherwise noted
Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 Starting TJ = 25°C3. ISD ≤ -27A, di/dt ≤ 300A/s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max UnitOff CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A -60 -- -- V
BVDSS
/ TJ
Breakdown Voltage Temperature Coefficient
ID = -250 A, Referenced to 25°C -- -0.06 -- V/°C
IDSSZero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V -- -- -1 A
VDS = -48 V, TC = 150°C -- -- -10 A
IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nAOn Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A -2.0 -- -4.0 V
RDS(on) Static Drain-Source On-Resistance
VGS = -10 V, ID = -13.5 A -- 0.055 0.07
gFS Forward Transconductance VDS = -30 V, ID = -13.5 A -- 12.4 -- SDynamic CharacteristicsCiss Input Capacitance VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 1100 1400 pF
Coss Output Capacitance -- 510 660 pF
Crss Reverse Transfer Capacitance -- 120 155 pFSwitching Characteristics td(on) Turn-On Delay Time
VDD = -30 V, ID = -13.5 A,
RG = 25
-- 18 45 ns
tr Turn-On Rise Time -- 185 380 ns
td(off) Turn-Off Delay Time -- 30 70 ns
tf Turn-Off Fall Time -- 90 190 ns
Qg Total Gate Charge VDS = -48 V, ID = -27 A,
VGS = -10 V
-- 33 43 nC
Qgs Gate-Source Charge -- 6.8 -- nC
Qgd Gate-Drain Charge -- 18 -- nC
Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- -27 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -108 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -27 A -- -- -4.0 V
trr Reverse Recovery Time VGS = 0 V, IS = -27 A,
dIF / dt = 100 A/s
-- 105 -- ns
Qrr Reverse Recovery Charge -- 0.41 -- C
(Note 4)
(Note 4)
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©2001 Fairchild Semiconductor Corporation 3 www.fairchildsemi.comFQP27P06 Rev.C0
0 5 10 15 20 25 30 350
2
4
6
8
10
12
VDS
= -30V
VDS
= -48V
※ Note : ID = -27 A
-VG
S,
Gat
e-S
ourc
e V
olta
ge
[V
]
QG, Total Gate Charge [nC]10-1 100 1010
500
1000
1500
2000
2500
3000Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Ca
paci
tan
ce [p
F]
VDS, Drain-Source Voltage [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.810
-1
100
101
102
175℃※ Notes : 1. V
GS = 0V
2. 250μs Pulse Test
25℃
-ID
R ,
Rev
erse
Dra
in C
urre
nt
[A]
-VSD
, Source-Drain Voltage [V]
0 10 20 30 40 50 60 70 80 90 100 110 120 1300.00
0.04
0.08
0.12
0.16
0.20
0.24
※ Note : TJ = 25℃
VGS
= - 20V
VGS = - 10V
RD
S(o
n)
[],
Dra
in-S
ourc
e O
n-R
esis
tan
ce
-ID , Drain Current [A]
2 4 6 8 1010
-1
100
101
102
175℃
25℃
-55℃※ Notes : 1. V
DS = -30V
2. 250μs Pulse Test
-ID ,
Dra
in C
urre
nt [
A]
-VGS , Gate-Source Voltage [V]10-1 100 101
100
101
102
VGS
Top : - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 VBottom : - 4.5 V
※ Notes : 1. 250μs Pulse Test 2. T
C = 25℃
-I
D, D
rain
Cur
rent
[A
]
-VDS, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
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©2001 Fairchild Semiconductor Corporation 4 www.fairchildsemi.comFQP27P06 Rev.C0
1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 11 0
-2
1 0-1
1 00
※ N o te s : 1 . Z
θ J C( t ) = 1 .2 5 /W M a x .℃
2 . D u ty F a c to r , D = t1/ t
2
3 . TJ M
- TC
= PD M
* Zθ J C
( t )
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Zθ
JC(t
), T
herm
al R
espo
nse
t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ]
25 50 75 100 125 150 1750
5
10
15
20
25
30
-ID,
Dra
in C
urre
nt [
A]
TC, Case Temperature [ ]℃
100
101
102
10-1
100
101
102
DC
10 ms
1 ms
100 s
Operation in This Area is Limited by R
DS(on)
※ Notes :
1. TC = 25
oC
2. TJ = 175
oC
3. Single Pulse
-ID,
Dra
in C
urre
nt [
A]
-VDS
, Drain-Source Voltage [V]
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
※ Notes : 1. V
GS = -10 V
2. ID = -13.5 A
RD
S(O
N),
(Nor
mal
ized
)D
rain
-Sou
rce
On-
Res
ista
nce
TJ, Junction Temperature [
oC]
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
※ Notes : 1. V
GS = 0 V
2. ID = -250 μA
-BV
DS
S,
(Nor
mal
ized
)D
rain
-Sou
rce
Bre
akdo
wn
Vol
tag
e
TJ, Junction Temperature [
oC]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs. Case Temperature
Figure 7. Breakdown Voltage Variationvs. Temperature
Figure 8. On-Resistance Variationvs. Temperature
Figure 11. Transient Thermal Response Curve
t1
PDM
t2
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©2001 Fairchild Semiconductor Corporation 5 www.fairchildsemi.comFQP27P06 Rev.C0
Charge
VGS
-10VQg
Qgs Qgd
-3mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Typeas DUT
Charge
VGS
-10VQg
Qgs Qgd
-3mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Typeas DUT
VDS
VGS10%
90%
td(on) tr
t on t off
td(off) tfVDD
-10V
VDS
RL
DUT
RG
VGS
VDS
VGS10%
90%
td(on) tr
t on t off
td(off) tfVDD
-10V
VDS
RL
DUT
RG
VGS
EAS = L IAS2----
21 --------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
-10V DUT
RG
L
I D
t p
EAS = L IAS2----
21
EAS = L IAS2----
21----21 --------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
-10V DUT
RG
LL
I DI D
t p
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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©2001 Fairchild Semiconductor Corporation 6 www.fairchildsemi.comFQP27P06 Rev.C0
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
DriverRG
Compliment of DUT (N-Channel)
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDDBody Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse Width
Gate Pulse Period--------------------------
DUT
VDS
+
_
DriverRG
Compliment of DUT (N-Channel)
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LLI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDDBody Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse Width
Gate Pulse Period--------------------------D =Gate Pulse Width
Gate Pulse Period--------------------------
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©2001 Fairchild Semiconductor Corporation 7 www.fairchildsemi.comFQP27P06 Rev.C0
Package Dimensions
TO-220
©2001 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
FQP27P06 Rev.C0
TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
2Cool™AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®
Dual Cool™EcoSPARK®
EfficentMax™ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™FACT®
FAST®
FastvCore™FETBench™
FPS™F-PFS™FRFET®
Global Power ResourceSM
Green Bridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver™OptoHiT™OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™Programmable Active Droop™QFET®
QS™Quiet Series™RapidConfigure™
Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®
STEALTH™SuperFET®
SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®
SyncFET™
Sync-Lock™®*
TinyBoost™TinyBuck™TinyCalc™TinyLogic®
TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC®
TriFault Detect™TRUECURRENT®*SerDes™
UHC®
Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™
®
™
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
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Rev. I64
tm
®
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Mouser Electronics
Authorized Distributor
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