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Transcript of Cabtures
Enabling Autonomous Sensor Nodes: Tunable Carbon Nanotube Electro-Mechanical Resonators (CabTuRes)
C. Hierold, C. Roman
W. Andreoni, A. Magrez / L. Forró , O. Gröning, A. Ionescu, M. Kayal, B. Nelson, D. Poulikakos, D. Briand / N. de Rooij
12.05.2011
Nano‐Tera.ch ‐ Annual Plenary Meeting, Bern, May 12, 2011
Overview
CabTuRes proposes a SiP solution to integrate CNT resonators (NEMS) with readout electronics (CMOS IC) within a package adapted to application (cap wafer)
CabTuRes is an interdisciplinary engineering research project at the cross roads between basic science and engineering with great innovation potential and high commercial opportunities for Swiss industry.
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5 mm
Main deliverables in
I. Tunable CNT resonators as a platform, enabling low-power sensors and devices for autonomous complex sensor systems for health, security and the environment
II. A System-in-Package (SiP) technology platform, integrating CMOS, MEMS and CNTs (or other nanostructures) for many future applications
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Potential applications
Tunable CNT resonators enable a wide range of apps such as:
b. Electronics:
a. Sensors:
CabTuRes demonstrator
CabTuRes demonstrator
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Rationale: mass balance
Yes, it is miniature and it is ultra low-power
What else?
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Miniaturization per se is not the
motivation but all the benefits
coming with miniaturization….
Mass detection: CNTs vs. SiC
First CNT mass sensors (2008) have surpassed in mass resolution state of the art SiC
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Yang et al, Nano Lett. 6, 583 (2006) Yang et al, Nano Lett. 11, 1753 (2011)
190.5 MHz
2.3 μm × 150 nm × 100 nm
SiC
7 zg @ 4.2 K 20 zg @ 300 K
1.4 zg @ 5 K
128 MHz
900 nm × 2 nm SWNT
Lassagne et al, Nano Lett. 8, 3735 (2008)
Mass detection: Record holders
CNT resonators have achieved atomic resolution:
[Jensen08] 0.13 zg (0.4 Au atom) @ 10-10 torr (shown) using singly clamped CNT field emission device
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[Chiu08] 0.085 zg (1 Ar atom) @ 6 K (not-shown) using SET detection
[Hüttel09] extrapolate (not measured) resolution to 7 yg (1 He atom) @ 20 mK using ultraclean SWNTs with Q~105 (@350 MHz)
Jensen et al, Nature Nano. 3, 533 (2008)
Chiu et al, Nano Lett. 8, 4342 (2008) Hüttel et al, Nano Lett. 9, 2547 (2009)
Rationale: mass balance
Yes, it is miniature and it requires ultra low-power to excite/readout a nanoresonator
Unprecedented mass resolution in comparison to nanowires and QCMs (~1 cm size) in UHV and low temperature demonstrated in literature
SNR and Q for SWNT resonators at ambient conditions must be investigated
Unprecedented mechanical tuning range of SWNTs (yield strain up to 5%) allows for a very large measurement range in closed loop operation.
High sensitivity for mass balance because of low m and high ω0
Goal: ultra low power and small size & weight is conditional for autonomous sensor systems
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Miniaturization per se is not the
motivation but all the benefits
coming with miniaturization….
The CABTURES Team
T5: CMOS IC & sys. model
T3: MEMS with CNTs
T4: CNT mech. interfaces
T1: CNT growth & integration
T2: SWNT fund. properties
T6: System in Package
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T6: System level assembly and encapsulation
Defined a consistent 3D System-in-Package integration process, incorporating the CNT NEMS fabrication process, hermetically packaging the NEMS chip and electrically connecting the NEMS and CMOS chips (by TSVs)
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Danick Briand
Rokhaya Gueye
Shih-Wei Lee
Teru Akiyama
T6: System level assembly and encapsulation
Achieved hermetic packaging via Au-Si eutectic bonding of a glass cap wafer with predefined cavities onto a Silicon wafer
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Danick Briand
Teru Akiyama Rokhaya Gueye
Shih-Wei Lee
glass cap wafer with deep cavities of 300 µm bonded to a Si wafer
T6: System level assembly and encapsulation
Demonstrated a Through-Silicon Via (TSV) process flow withstanding both CNT growth temperature and device HF release
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Danick Briand
Teru Akiyama Rokhaya Gueye
Shih-Wei Lee
KOH -TSVs (backside view)
T3: Resonator design, fabrication and characterization
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Shih-Wei Lee
Hengky Chandrahalim Cosmin Roman
Matthias Muoth
Developed a CNT resonator fabrication process based on SoI with contaminant- free, in situ grown SWNTs contacted by thick post-metallization and consistent with the integration SiP process
tilted SEM view of a suspended CNFET
T3: Resonator design, fabrication and characterization
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Shih-Wei Lee
Hengky Chandrahalim Cosmin Roman
Matthias Muoth
Demonstrated a contact passivation
process based on ALD Al2O3 to prevent long term degradation of the contact resistance
T3: Resonator design, fabrication and characterization
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Shih-Wei Lee
Hengky Chandrahalim Cosmin Roman
Matthias Muoth
Developed a characterization setup to excite the CNT resonator and readout its motion via the DC component of the piezoresistance
T3: Resonator design, fabrication and characterization
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Shih-Wei Lee
Hengky Chandrahalim Cosmin Roman
Matthias Muoth
Demonstrated operating tensile MEMS actuators post-growth by performing tensile tests in SEM
T1: Carbon nanotube integration
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Shih-Wei Lee Matthias Muoth
Developed a process to define catalyst particles (LANS) at precise locations (within 80 nm2) from which clean, long CNTs with high yield (100%) and narrow diameter distribution (1.2±0.25 nm) were synthesized
Arnaud Magrez Massimo Spina
1μ
m
T4: Mechanochemical clamping at contacts
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Shih-Wei Lee Matthias Muoth
Developed a process to fabricate suspended
CNT samples compatible with nano-manipulation inside both SEM and TEM to test the mechanical clamping strength
Simone Schürle Manish Tiwari Kaiyu Shou
w.o. metal clamping: failure on contact w metal clamping: failure at CNT outside contact
T4: Mechanochemical clamping at contacts
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Shih-Wei Lee Matthias Muoth
Developed a lateral force microscopy (LFM)
technique including a diamagnetic levitation calibration procedure to enable accurate stiffness acquisition of individual-SWNTs
Simone Schürle Manish Tiwari Kaiyu Shou
2 m
T2: Defect analysis and functionalization
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Developed tools to analyze the impact of chemical functionalization on SWNTs based on Scanning Tunneling Spectroscopy (STS), showing that hydrogenation is reversible and just weakly perturbing electronic properties (no QD states formed)
Fabio Pietrucci
Rached Jaafar
Jaap Kroes
O. Gröning
W. Andreoni
T2: Defect analysis and functionalization
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Analyzed via Density Functional Theory (DFT)
calculations binding energies of different hydrogen adsorption configurations including their impact on the electronic properties, and by Classical MD the impact of topological defect concentration on Young’s modulus
Fabio Pietrucci
Rached Jaafar
Jaap Kroes
O. Gröning
W. Andreoni
T5: Integrated electronics and system properties
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Designed a wideband readout circuit (1-
103MHz) for the CNFET
Defined an oscillator feedback loop around the CNT resonator based on the AC piezoresistance component
Christian Kauth Marc Pastre
Ji Cao Dimitrios Tsamados
T5: Integrated electronics and system properties
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Developed a fabrication process flow for
prototyping double gate, vibrating body CNFETs, to extract their small-signal model parameters and measure AC piezoresistivity
Christian Kauth Marc Pastre
Ji Cao Dimitrios Tsamados
1 m
200 nm
By J. Cao @ EPFL
Summary and Conclusions
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CabTuRes is a technology integration project between nine partner groups: integration of functional nano structures with CMOS circuits and zero level packaging
The process flow for integration is settled, minor changes possible
The unit processes for SWNT growth are under development and follow the constraints of the integrated process flow: suspended SWNT FETs achieved
The oscillator circuit architecture is preliminary defined, utilizing the 2*f0 piezoresistive current modulation of a resonating suspended SWNT FET. Modeling and parameter extraction has started.
Tasks for basic investigations: SWNT localization and radius control, mechanical clamping and damping, defect density and impact on electronic properties, are contributing significantly to the knowledge about SWNT mechanical and electronic properties
Additional information and technical details
For more information please consult any of the 6 CabTuRes posters
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The CabTuRes team thanks you!
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Group picture on 14.10.2009 at ETH Zurich
The CabTuRes team thanks you!
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