UNIT - 2 VLSI CIRCUIT DESIGN PROCESSES · 2019. 8. 8. · Department of Electronics and...

Department of Electronics and Communication Engineering, VBITDepartment of Electronics and Communication Engineering, VBIT

UNIT - 2

VLSI CIRCUIT DESIGN PROCESSES

P.VIDYA SAGAR ( ASSOCIATE PROFESSOR)

VLSI


SYLLABUS

UNIT II

VLSI CIRCUIT DESIGN PROCESSES: VLSI Design Flow, MOS Layers, Stick Diagrams, Design

Rules and Layout, 2 m CMOS Design rules for wires, Contacts and Transistors Layout Diagrams for

NMOS and CMOS Inverters and Gates, Scaling of MOS circuits.

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CONTENTS:

➢VLSI design flow

➢MOS layers

➢ Stick Diagrams

➢ Design Rules and Layout diagrams

➢ 2µm Design Rules

➢ Layout Diagrams for Inverter, Logic gates

➢ Scaling of MOS

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➢VLSI design flow

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MOS Layers :

There are 4 layers

• N-diffusion

• P-diffusion

• Poly Si

• Metal

•These layers are isolated by one another by thick or thin silicon dioxide insulating layers.

• Thin oxide mask region includes n-diffusion / p-diffusion and transistor channel.

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Stick Diagrams :

➢ A stick diagram is a cartoon of a layout.

➢ Does show all components/ vias (except possibly tub ties), relative

placement.

➢ Does not show exact placement, transistor sizes, wire lengths, wire

widths, tub boundaries

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• Key idea: "Stick figure cartoon" of a layout

• Useful for planning layout

relative placement of transistors

assignment of signals to layers

connections between cells

cell hierarchy

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Stick Diagrams

Metal

poly

ndiff

pdiff

Can also draw in shades

of gray/line style.

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Rules for Drawing Stick Diagrams :

• Metal 1

• Poly Si

• N-diffusion

• P-diffusion

Rule 1:

• When two or more sticks of the same type cross or touch other that

represents electrical contact.

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Rule 2:• When two or more sticks of different type cross or touch other there is no

electrical contact.(if contact is needed show explicitly)

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Rule 3: When a poly crosses diffusion it represents MOSFET. If contact is

shown it is not transistor.

nMOSFET pMOSFET nMOSFET

(Depletion Mode)

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STICK DIAGRAMS

P- Diffusion

n- Diffusion

Poly silicon

Metal 1

Contact cut

N implant

Demarcation line

Substrate contact

PMOS Enhancement Transistor

NMOS Enhancement Transistor

NMOS Depletion transistor

NPN Bipolar Transistor

Buried Contact

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Stick diagram

Encodings for a simple single metal nMOS process

COLOR STICK ENCODING LAYERS MASK LAYOUT ENCODINGCIF LAYER

Caltech Intermediate FormMONOCROME MONOCROME

GREEN

RED

BLUE

BLACK

GRAY

n-diffusion

n+active

Thniox

Polysilicon

Metal 1

Contact cut

OverglassNOT APPLICABLE

nMOS ONLY YELLOW

Implant

Buried

contact

nMOS ONLY

BROWN

ND

NP

NM

NC

NG

NI

NB

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nMOS Design Style:Step 1:Draw metal VDD and GND rails in parallel leaving sufficient space for

circuit components between them.

VDD

GND

Step 2: Thinox (green) paths are drawn between rails for inverter &

inverter logic.

Vin

VOUT

VDD

GND

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Step 3: Connect poly over thinox wherever transistor required.

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Step 4: Connect metal wherever is required and create contact for connection.

Vout

VinVin

VOUT

VDD

GND

Depletion

mode nMOS

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VDD

GND

NMOS INVERTER STICK DIAGRAM

D

A

BS

D

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5 V

Dep

Vout

Enh

0V


5 V

Dep

Vout

Enh

0V

Vin

5 v

0 V

Vin

5 v

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VDD

GND

CMOS INVERTER STICK DIAGRAM

FIG 1 Supply rails

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VDD

GN

D

PMOS

NMOS

S

S

D

D


Fig 2 Drawing Pmos and Nmos Transistors between Supply rails

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VDD

GND

PMOS

NMOS

A

S

S

D

D


Fig 3 Combining Gate of Pmos and Nmos Transistors and giving common input With same gate poly silicon metal

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VDD

GND

PMOS

NMOS

A

DS

S D


Fig 4 Combining Drain pf Pmos and Nmos Transistors to take output with metal 1

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VDD

GND

PMOS

NMOS

D

A

S

S D

B


Fig 5 Take the output with the poly silicon metal

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VDD

GND

PMOS

NMOS

D

A

S

S D

B


Fig 6 Connect the source of Pmos to VDD and Nmos to GND

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VDD

GND

PMOS

NMOS

D

A

S

S D

B

CONTACT


Fig 7 Connect the contact cuts where the different metals are connected

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VDD

GND

PMOS

NMOS

D

A

S

S D

B

CONTACT


Fig 8 Final CMOS Inverter

Substrate contact

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Alternate Layout of NOT Gate

Gnd

Vp

x

x

X

x

Vp

Gnd

X

x

X

X

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NAND GATE

Schematic Stick diagram Layout

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VDD

GND

CMOS NAND GATE STICK DIAGRAM

FIG 9 Supply rails

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VDD

GND


Fig 10 Drawing P and N Diffusion between Supply rails

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VDD

GND

SS

SD

DD

DS

A B

C


Fig 11 Drawing the poly silicon for two different inputs and

identify the source and drain

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VDD

GND

SS

SD

DD

DS

A B

C


Fig 12 Connect the source of Pmos to VDD and Nmos to GND and

subtrate contacts of both

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VDD

GND

SS

SD

DD

DS

A B

C


Fig 13 Draw the output connections

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VDD

GND

SS

SD

DD

DS

A B

C


Fig 14 Connect the contact cuts where the different metals are connected

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Gnd

Vp

ba.

a b

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Vdd contact

Vss contact

Vdd

Vss

Demarcation Line

Vout(A nand B)

A

Ploy(G)

Ploy(G)

Ploy(G)

Ploy(G)

s

s

s s

D

D

D

D

B

Cmos Nor GATE

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Cmos Nor GATE

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Power

Ground

B

C

OutA


BiCmos inverter

Vss contact

Vdd

Vss

Demarcation

Line Vout

Vdd contact


Encodings for NMOS process:

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Encodings for CMOS process:

•Figure shows when a n-transistor is

formed: a transistor is formed when a

green line (n+ diffusion) crosses a red

line (poly) completely.

•Figure also shows when a p-

transistor is formed: a transistor is

formed when a yellow line(p+

diffusion) crosses a red line (poly)

completely

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Encoding for BJT and MOSFETs:

layers in an nMOS chip consists of

a p-type substrate

paths of n-type diffusion

a thin layer of silicon dioxide

paths of polycrystalline silicon

a thick layer of silicon dioxide

paths of metal (usually aluminium)

a further thick layer of silicon dioxide

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LAYOUT

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1.Scalable Design Rules (e.g. SCMOS, λ-based design rules):

In this approach, all rules are defined in terms of a single parameter λ.

The rules are so chosen that a design can be easily ported over a cross section of industrial

process ,making the layout portable .Scaling can be easily done by simply changing the

value .

2.Absolute Design Rules (e.g. μ-based design rules ) :

In this approach, the design rules are expressed in absolute dimensions (e.g.0.75μm) and

therefore can exploit the features of a given process to a maximum degree.

There are primarily two approaches in describing the design rules

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What is Via?

It is used to connect higher level metals from metal1 connection

The direct connections between metal, polysilicon, and diffusion use

intermediate layers such as the contact-cut and the buried-contact layers.

The entire chip is typically covered with a layer of protective coating called

overglass

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Buried contacts:The buried contact is a method to make direct ohmic contact between the polysilicon gate material andthe junctions, in silicon-gate integrated circuits.With this method – requiring an additional masking layer – it was possible to use the polysilicon as anadditional layer of interconnection, greatly improving the circuit density, particularly in random logiccircuits.Here gate length is dependent upon the alignment of the buried contact mask relative to the poly siliconand therefore vary by ± λ.

Butting contact:The gate and source of a depletion device can be connected by a method known as butting contact.Here metal makes contact to both the diffusion forming the source of the depletion transistor and to thepoly silicon forming this device’s gate.Its advantage is that no buried contact mask is required and it avoids associated processing.


CMOS Process Layers

Layer

Polysilicon

Metal1

Metal2

Contact To Poly

Contact To Diffusion

Via

Well (p,n)

Active Area (n+,p+)

Color Representation

Yellow

Green

Red

Blue

Magenta

Black

Black

Black

Select (p+,n+) Green

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2λ

2λ

1λ

2λ

3λ

P diffusion N diffusion

P diffusion

P diffusion N diffusion

P diffusion

METAL 1

METAL 14λ

4λ3λ

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Intra-Layer Design Rules

Metal24

3

10

90

Well

Active3

3

Polysilicon

2

2

Different PotentialSame Potential

Metal13

3

2

Contactor Via

Select

2

or6

2Hole

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Transistor Layout

1

2

5

3T

ransi

stor

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Via’s and Contacts

1

2

1

Via

Metal toPoly ContactMetal to

Active Contact

1

2

5

4

3 2

2

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Select Layer

1

3 3

2

2

2

WellSubstrate

Select3

5

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2λ

4λ

4λ

1λ 2λ 4λ

4λ

1λ

2λ3λ

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2λ

2λ

2λ

2λ2λ

2λ

2λ

2λ

2λ

2λ6λ x 6λ

2λ

2λ

2λ

2λ

2λ

NMOS

ENHANCEMENT

PMOS

ENHANCEMENT

NMOS

DEPLETION

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LAMBDA BSED RULES

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Lambda based Design Rules:

Design rules include width rules and spacing rules.

Mead and Conway developed a set of simplified scalable λ -based design rules, which

are valid for a range of fabrication technologies.

In these rules, the minimum feature size of a technology is characterized as 2 λ .

All width and spacing rules are specified in terms of the parameter λ .

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Design rules for the diffusion layers and metal layers

Figure shows the design rule n diffusion, p diffusion, poly, metal1 and metal 2. The n and p

diffusion lines is having a minimum width of 2λ and a minimum spacing of 3λ. Similarly

it shows for other layers.

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Design rules for transistors and gate over hang distance

Figure shows the design rule for the transistor, and it also shows that the poly should extend

for a minimum of 2λ beyond the diffusion boundaries.(gate over hang distance)

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Via

VIA is used to connect higher level metals from metal1 connection.

Figure shows the design rules for

contact cuts and Vias. The design rule

for contact is minimum 2λx2λ and

same is applicable for a Via.

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Buried contact and Butting contact

Buried contact is made down

each layer to be joined

Butting contact

The layers are butted together in such a way

the two contact cuts become contiguous

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CMOS LAMBDA BASED DESIGN RULES:

Figure shows the rules to be followed in CMOS well processes to accommodate both n

and p transistors

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CMOS Inverter Layout

A A’

np-substrate Field

Oxidep+n+

In

Out

GND VDD

(a) Layout

(b) Cross-Section along A-A’

A A’

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SCHEMATIC AND LAYOUT OF BASIC GATES

a) CMOS INVERTER NOT GATE

Schematic Stick diagram Layout72

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The CMOS NOT Gate

X

X

X

X

Vp

Gnd

x

Gnd

n-well

Vp

x x

x

Contact Cut

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Alternate Layout of NOT Gate

Gnd

Vp

x

x

X

x

Vp

Gnd

X

x

X

X

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b) NAND GATE

Schematic Stick diagram Layout

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NAND2 Layout

Gnd

Vp

ba.

a b

X

Vp

Gnd

X X

X X

a b

ba.

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NOR2 Layout

Gnd

Vp

ba

a bX

Vp

Gnd

X X

X X

a b

ba

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TRANSMISSION GATE

Symbol schematic stick diagram

layout

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Example: Inverter

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Inverter, contd..

Layout using Electric

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Example: NAND3

•Horizontal N-diffusion and p-diffusion strips

•Vertical polysilicon gates

•Metal1 VDD rail at top

•Metal1 GND rail at bottom

•32 by 40

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NAND3 (using Electric), contd.

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Scaling

• VLSI technology is constantly evolving towards smaller line widths

• Reduced feature size generally leads to

– better / faster performance

– More gate / chip

• More accurate description of modern technology is ULSI (ultra large

scale integration

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Scaling Factors

• In our discussions we will consider 2 scaling factors, α and β

• 1/ β is the scaling factor for VDD and oxide thickness D

• 1/ α is scaling factor for all other linear dimensions

• We will assume electric field is kept constant

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Scaling Factors for Device Parameters Simple derivations showing the effects of scaling are derived in Pucknell and Eshraghian pages 125 - 129

It is important that you understand how the following parameters are effected by scaling.

Gate Area

Gate Capacitance per unit area

Gate Capacitance

Charge in Channel

Channel Resistance

Transistor Delay

Maximum Operating Frequency

Transistor Current

Switching Energy

Power Dissipation Per Gate (Static and Dynamic)

Power Dissipation Per Unit Area

Power - Speed Product

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MOSFET Scaling

❑ Constant Field Scaling

❑ Constant Voltage Scaling

❑ Lateral Scaling

❑SCALING - refers to ordered reduction in dimensions of the MOSFET and other VLSI features

❑Reduce Size of VLSI chips.

❑Change operational characteristics of MOSFETs and parasitic.

❑Physical limits restrict degree of scaling that can be achieved.

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Constant Field Scaling

❑ The electric field E is kept constant, and the scaled device is obtained by applying a dimensionless scale-

factor α (such that E is unchanged):

❑ all dimensions, including those vertical to the surface (1/α)

❑ device voltages (1/α)

❑ the concentration densities (α).

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Constant Voltage Scaling

❑ Vdd is kept constant.

❑ All dimensions, including those vertical to the surface are scaled.

❑ Concentration densities are scaled.

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Lateral Scaling

❑ Only the gate length is scaled L = 1/α (gate-shrink).

❑ Year Feature Size(μm)

1980 5.0

1983 3.5

1985 2.5

1987 1.75

1989 1.25

1991 1.0

1993 0.8

1995 0.6

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PARAMETER SCALING MODEL

Constant Constant Lateral

Field Voltage

Length (L) 1/α 1/α 1/α

Width (W) 1/α 1/α 1

Supply Voltage (V) 1/α 1 1

Gate Oxide thickness (tox) 1/α 1/α 1

Junction depth (Xj) 1/α 1/α 1

Current (I) 1/α α α

Power Dissipation (P) 1/α2 α α

Electric Field 1 α 1

Load Capacitance (C) 1/α 1/α 1/α

Gate Delay (T) 1/α 1/α2 1/α2

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Scaling of Interconnects

• Resistance of track R ~ L / wt

• R (scaled) ~ (L / α) / ( (w/ α )* (t

/α))

• R(scaled) = αR

• therefore resistance increases with

scaling

t w L

A

B

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Scaling - Time Constant

• Time constant of track connected to gate,

• T = R * Cg

• T(scaled) = α R * (β / α2) *Cg = (β / α) *R*Cg

• Let β = α, therefore T is unscaled!

• Therefore delays in tracks don’t reduce with scaling

• Therefore as tracks get proportionately larger, effect gets worse

• Cross talk between connections gets worse because of reduced spacing

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Scaling of MOS and circuit parameter

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UNIT - 2 VLSI CIRCUIT DESIGN PROCESSES · 2019. 8. 8. · Department of Electronics and...

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Transcript of UNIT - 2 VLSI CIRCUIT DESIGN PROCESSES · 2019. 8. 8. · Department of Electronics and...