Surface Micromachining
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Transcript of Surface Micromachining
Surface Micromachining
Dr. Marc Madou,
Fall 2012, UCI
Class 10
Blanket n+ diffusion of Si substrate (ground plane)
Passivation layer (e.g. SiO2 , Si3N4 , LPCVD Si3N4 on top of SiO2)
Opening up the passivation layer for contacts (observe color change or hydrophobic/hydrophilic behavior):
– wet (BHF)
– dry (SF6)
Strip resist in piranha (adds some oxide in the window)
Short BHF etch to remove thin oxide
n+
n
n+
ntSiO2
Lm
Lm + 2tSiO2Photoresist
Si3N4
Surface MicromachiningBasic Process Sequence (poly-Si)
Deposition of a base, spacer or sacrificial layer-phosphosilicate glass (PSG)-CVD
Densification at 950 °C for 30-60 min in wet oxygen
Base window etching in BHF for anchors
Structural material deposition e.g. poly-Si (doped or undoped) from (CVD at about 600°C , 73 Pa and 125 sccm (standard centimeter cube per minute); at about 100Å/min) e.g.
Anneal of the poly-Si at 1050°C for 1 hour to reduce stress in the structure
PSG
Structural layer
SiH4 → Si + 2H2
nitride
Surface Micromachining
Basic Process Sequence (poly-Si).
Basic Process Sequence (poly-Si)
Doping of poly-Si: in-situ, PSG sandwich and ion implantation
Patterning of structural material e.g. RIE in , say, CF4-O2
Release step, selective etching of spacer layer e.g. in diluted HF
RS(μm / )min >> Rm(μm / )min >> R i(μm )min
RS
Ri Rm
nitride
Surface Micromachining
Etchants-Spacer and Microstructural LayerEtchant Buffer/Isolation Spacer MicrostructureBuffered HF(5:1, NH4F:conc. HF)
LPCVD Si3N4/thermal
SiO2
PSG Poly-Si
RIE us ing CHF3BHF (6:1)
LPCVDSi3N4
LP CVDSiO2
CVD Tungsten
KOH LPCVDSi3N4/thermal SiO2
Poly-Si Si3N4
Ferri c Chloride Thermal SiO2 Cu Polyimide
HF LPCVDSi3N4/thermal SiO2
PSG Polyimide
Phosphoric/Aceti cAcid/Ni tri c Acid(PAN or5:8:1:1water:phosphoric:aceti c:ni tri c)
Thermal SiO2 Al PE CVD Si3N4Nickel
Ammonium Iodide/ Iodine Alcohol
Thermal SiO2 Au Ti
EDP Thermal SiO2 Poly-Si SiO2
Generic principle of surface micromachining
Si
Si
Al
Etch access
Si
Sacrificial layer definition
Releasing diaphragm:phosphoric/acetic acid/nitric acid (PAN)
Polyimide diaphragm deposition
Surface Micromachining
LPCVD of poly-Si Hot wall, horizontal reactor Reaction rate controlled--at lower
pressures and well controlled temperatures (100 to 200 wafers)
Poly-Si deposits everywhere requiring periodic cleaning (e.g. every 20 runs if each run deposits 0.5 µm)
Visit: http://mems.eeap.cwru.edu/shortcourse/partII_2.html and http://www-mtl.mit.edu:800/htdocs/tutorial.html
Surface Micromachining
ABCDESi Phosphosilicate glass PolysiliconStiction Stiction during release:– Surface tension during drying pulls movable
members together (See also room temperature bonding of Si to Si and glass to Si)
– Solutions:» Stand-off bumps» Sacrificial polymer » Sacrificial poly-Si links to stiffen the structures» HF vapor» Freeze-drying water/methanol mixtures» Super critical cleaning
Stiction after release:– Hydrophobic monolayers– Rough surfaces– Bumps
Surface Micromachining
Control of film stress With L=150 µm and W=t=2 µm, fo=10 to 100 kHz.
Annealing at high temperature (900-1150°C)
Fine-grained tensile vs large grained compressive
Doping elements Sandwich doping and annealing. Vary material composition e.g Si
rich Si3N4
In PECVD: change the RF power and frequency
In sputtering: gas pressure and substrate bias
fo ≈12π
4EtW3
ML3 +24σ rtW5ML
Polysilicon Drive combSense combAnchorFlexure ( length L, width W, thickness t)Drive combcontact padSense contact padyxSuspended shuttle (mass M)
Surface Micromachining
Control of film stress
MMMM
Folding flexures makes the resonant frequency independent of the residual stress but warpage becomes an issue Corrugated structural members (see above)
Y
X
ky >> kx( )force constant
fx =kx
M ⎛ ⎝
⎞ ⎠
12
Surface Micromachining
Sealing processes Microshells a wafer level
packaging strategy Thin gaps (e.g. 100 nm) are etched
out and then sealed:– Reactive sealing by oxidation
– LPCVD deposition
Surface Micromined Sealed ResonatorSiO2Si Polysilicon VacuumResonatorAEtched spacerCavityO2B
COMPOSITE SI3 N4 /POLYSILICONPOLYSILICON PIEZORESISTOR
Surface Micromachining
IC compatibility
CMOS SurfaceMicromachining
Common Features Silicon based processes Same materials Same etching principles
Process flow Standard Application specificVertical dimens ion ~ 1 µm ~1-5 µmLateral dimension <1 µm 2-10 µmComplexity (# masks) >10 2-6
Temperature (°C) MaterialLP CVD Depos ition 450 Low Temperature Oxide
(LTO)/PSG" " 610 Low stress poly Si" " 650 Doped poly Si" " 800 NitrideAnnealing 950
1050PSG densificationPoly Si stress annealing
Comparison of CMOS and Surface Micromachining
Critical Process Temperatures for Microstructures
- Junction migration at 800 to 950°C- Al interconnect suffers at 400-450 °C- Topography
Surface Micromachining
Poly-Si surface micromachining modifications: porous poly-Si
Just like we can make porous Si from single crystal Si we can do the same with poly-Si (low currents densities in highly concentrated HF)
Applications:– Channels parallel to a flat surface
(switch from porous to polishing and back--chambers with porous plugs)
– Enclosed chambers (blisters of free poly-Si)
– Hollow resonators (higher Q)
CVD Si3N4
CVD poly-Si
CVD Si3N4
Surface Micromachining
Poly-Si surface micromachining modifications: hinged poly-Si
Make structures horizontally and erect them on a poly-Si hinge (probe station)---rigid structures (Prof. Pister, UCB)
Polyimide hinges also have been made ( butterfly wing)---movable structures
Poly 1OxidePoly 2Poly 2Poly 1Poly 2 staple holdingpoly 1 plate
polyimide hinge (E= 3 GPa) poly-Si hinge (E= 140 GPa)
Surface Micromachining
Poly-Si surface micromachining modifications:hinged poly-Si
Pister et al., UCB
Micromachined integrated optics for free space interconnections
Surface Micromachining
Poly-Si surface micromachining modifications: thick poly-Si and HEXSIL
Thick poly-Si--10 µm in 20 ‘ with SiH2Cl2 at 1000°C has become possible (low tensile stress)
HEXSIL (Dr. Keller, UCB):– Deep dry etching of trenches in SCS
(e.g. 100 µm deep)-short isotropic etch to smooth the walls
– Deposition of sacrificial and structural materials (undoped, doped poly-Si and metal e.g. Ni)
– Demolding by etching away the sacrificial material
Surface Micromachining
Poly-Si surface micromachining modifications: HEXSIL
Dr. Keller, UCB
Membrane filter with stiffening rib HEXSIL tweezers
Surface Micromachining
Poly-Si surface micromachining modifications: SIMOX
Types of Silicon On Insulator (SOI) processes:
– SIMOX (Separated by IMplanted OXygen)
– Si fusion bonded wafers
– Zone-melt recrystallized polysilicon (ZMR)
SIMOX substrate
0.2 μ -m epi Si
0.4 μ m buried oxide
Thicken up epi Si to
4 μ m
Dry etch access hole
S acrificial layer etching Hermetic sealing of etching hole by plasma CVD of
non stressed dielectric plug
Metallization and diaphragm definition
PP
Surface Micromachining
Non-poly-Si surface micromaching.
Polyimide: e.g. SRI flat panel display
UV depth lithography– AZ-4000 (high viscosity, many
layers)
– SU-8 (IBM)
Surface Micromachining
Capp Spindt