Surface Micromachining - Hot Chips · Surface Micromachining IC fabrication technology: –...

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Surface Micromachining An IC-Compatible Sensor Technology Bernhard E. Boser Berkeley Sensor & Actuator Center Dept. of Electrical Engineering and Computer Sciences University of California, Berkeley

Transcript of Surface Micromachining - Hot Chips · Surface Micromachining IC fabrication technology: –...

Page 1: Surface Micromachining - Hot Chips · Surface Micromachining IC fabrication technology: – electronics – mechanics (processing on chip surface) ⇒Micro-Electro-Mechanical System

Surface Micromachining

An IC-Compatible Sensor Technology

Bernhard E. BoserBerkeley Sensor & Actuator Center

Dept. of Electrical Engineering and Computer SciencesUniversity of California, Berkeley

Page 2: Surface Micromachining - Hot Chips · Surface Micromachining IC fabrication technology: – electronics – mechanics (processing on chip surface) ⇒Micro-Electro-Mechanical System

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Sensor Applications ...

• pressure

• chemical

• inertial

• image

• temperature

• ...

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Surface Micromachining

IC fabrication technology:– electronics

– mechanics(processing on chip surface)

⇒ Micro-Electro-Mechanical System

(MEMS) on a chip

Ref: Analog Devices ADXL-50

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Versatile Sensor Technology• 4 µm BiCMOS

• 3 x 3 mm2 chip size

• polysilicon sensors

• devices:– accelerometers– gyroscopes– resonant force sensor– high-Q filters– clocksRef: ADI / UCB Multiproject Run (BiMEMS)

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Outline

)Accelerometer Example– performance versus application

– mechanical sensing element

– electronic interface

• Fabrication Technology• MEMS Applications• Summary

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Acceleration Sensors

10 -6 10 -210 -4 1 10 2 10 4

10 -1

10 1

10 2

1

10 3

10 4

Acceleration [ g ] (1g = 9.8m/sec 2)

Ban

dwid

th

[ Hz

]Smart Bomb

Air Bag

Pointing Device

Head Mounted DisplayShipping

Active Suspension

Navigation

Machine Health

Earth Graviat ion

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Acceleration Sensing Principle

∆xInertial Mass

F = m aext

SpringF = k ∆x

aextRef: Analog Devices ADXL05

Inertial Mass, m 0.1 µgramsPlate Thickness 2 µmSpring Width 1 µmAir Gap (to substrate) 1.6 mmResonant Frequency 10 kHz

m aext = k ∆x

∆x = aext m/k = aext / ωr2

= 1 mg / (2π 10kHz) = 0.025 Å

x

springanchor

inertial mass

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Capacitive ∆x Sensinginertial mass

Sense Fingers:• length 150 µm• gap 1 µm• number 40• capacitance 3 fF/finger• total cap 120 fF• sensitivity ∆C/∆x 12 aF/Å

x

anchor ∆C = 0.3 aF for aext = 1 mg

Cs + ∆C Cs - ∆C

Ref: Analog Devices ADXL05

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Sense Electronics

Cs + ∆C

Cs - ∆C

A1

A2

Voffset

Cint

Σ

Cauto-zero

Φ2

Φ1

Φ1

Φ1

Φ1

Φ1Φ2

Φ2

Vout ~ aext

Two-Phase Operation:Φ1 offset & 1/f noise cancellationΦ2 position sense

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MEMS Accelerometer

• Die size 3 x 3mm2

• Supply current 3.7mA @ 5V

• Bandwidth 50 Hz

• Full scale input ± 5g

• Resolution 1mg

• Digital output

Ref.: M. A. Lemkin et al., “A fully differential surfacemicromachined lateral accelerometer”, CICC,Atlanta, 1996.

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Angular Accelerometer

Ref: T. J. Brosnihan et al, “SurfaceMicromachined Angular Accelerometer withForce Feedback”, Digest ASME Int. Conf. andExpo, San Francisco, Nov. 1995.

• same electronics

• sensitive to accelerationabout the z-axis

• applications: hard-diskdrives

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Outline

• Accelerometer Example)Fabrication Technology

– MEMS Device Fabrication

– Electronic Devices

– Release

• MEMS Applications• Summary

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Mechanical Device Fabrication

Si substrate

polysilionnitride

sacrificial oxide

Ref.: J. H. Smith et al, “Embedded Micromechanical Devices for the Monolithic Integration of MEMS with CMOS”,Digest IEDM, Dec. 1995, pp. 609-612.

• MEMS-first → avoids degradation of CMOS

CMOS Area MEMS Area

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CMOS Device Fabrication• fill trench with oxide, planarize (CMP)

• standard CMOS device fabrication

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Release

• etch sacrificial oxide in MEMS area

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Released Mechanical Elements

Ref.: J. J. Sniegowski et al., “Monolithic gearedmechanisms driven by a polysiliconsurface-micromachined on-chipelectrostatic microengine”, Digest Solid-State Sensor and Actuator Workshop,Hilton Head, June 1996, pp. 178-182.

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Outline• Accelerometer Example• Fabrication Technology)MEMS Applications & Technology

– Gyroscopes– Displays

– 3D MEMS (Fiber-Optic Interface)

– Packaging

• Summary

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Gyroscope Principlez

z

x

• spin disk around z-axis

• input: rotation about x-axis

• measure: torque on z-axis

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Electrostatic MEMS Motor

Problem:no high-quality bearings

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Two-Axis Angular Rate Sensor

Ref: T. Juneau et al., “Micromachined Dual InputAxis Angular Rate Sensor”, Solid-StateSensor and Actuator Workshop, Hilton Head,SC, June 1996.

• “vibrate” around z-axis(electrostatic actuation)

• sensitive to x- and y-axisinputs

electrostatic drive combs

rotor

Ωz = A sin ω t

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Gyro Sense Electronics

• Q = 1000 in 60mT vacuum

• Rotor resonance 28 kHz

• Bandwidth 25 Hz

• Resolution 1 deg/sec

• Applications:

– automotive

– head-mounted displays– input devices

Cint

Coriolis Oscillation

Rotor Drive Signal

~Sense Modulation

SenseElectrode

Rotor

Rate Output Signal

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Digital Mirror Display (DMD)

Ref: http://www.ti.com/dlp

DMD

array of movable mirrors directlight to or off screen

light source

DMD concept

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DMD Pixel

Pixel anatomy:- SRAM cell- Al mirror

(electrostatic actuation)

SEM of cleaved pixel

± 10 degrees tilt 20 µm

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3D MEMS Structures

• fold-up structures

add 3D capability

• latches hold

structure in place

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Fiber-Optical Interface

actuated microreflector vibromotor actuator (closeup)

Ref.: M. J. Daneman et al., “Linear Vibromotor Actuated Micromachined Microreflector for Integrated OpticalSystems”, Solid-State Sensor and Actuator Workshop, Hilton Head, 1996, pp. 109-112.

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MEMS Packaging

• packaging issues:– controlled ambient (e.g.

vacuum)

– protect from plastic injectionmolding

• solution:– MEMS caps

• fabricate on donor wafer• batch transfer

Ref.: M. B. Cohn et al.: “Wafer-to-wafer transfer ofmicrostructures for vacuum packaging”, Solid-StateSensor and Actuator Workshop, Hilton Head, 1996.

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Vacuum Cap FabricationSi Mold (reusable)

0.5 µm sacrificial PSG

5 µm polysilicon

1 µm gold

HEXSIL cap

Release

Contact & Anneal

Separate

completed MEMS wafer

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Vacuum Caps

100 µm flange

300 µmstiffening ribs

4 µm cavity

Ref.: M. B. Cohn et al.: “Wafer-to-wafer transfer ofmicrostructures for vacuum packaging”, Solid-StateSensor and Actuator Workshop, Hilton Head, 1996.

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Surface Micromachining Summary

• IC compatible processing

• Versatile:• inertial sensors• displays• optical bench• vacuum encapsulation+ RF components+ disk-drive R/W arm assembly+ . . .