Study on field-effect transistors ... Transistor operation in Si MOS field-effect transistor .....2...

2013, August
Xuexia He
Study on field-effect transistors and
superconductors with phenacene
molecules
Graduate School of Natural Science
and Technology
(Doctor’s Course)
OKAYAMA UNIVERSITY

Contents
Abstract ......................................................................................................................................i
Chapter 1. Introduction to recent organic field-effect transistors and aim of this study ........ 1
1-1.Basic principle of field-effect transistor ............................................................................. 1
1-2. Transistor operation in Si MOS field-effect transistor ....................................................... 2
1-3. History of development of field-effect transistor ................................................................ 3
1-4. Fundamental principle of organic field-effect transistor.................................................... 4
1-5. A brief history of organic field-effect transistor................................................................. 5
1-6. A new type of organic field-effect transistor with phenacene molecules ............................. 7
1-7. Interesting physical properties of phenacene molecules .................................................... 8
1-8. Motivation and aim of this study ....................................................................................... 9
References ............................................................................................................................ 11
Chapter 2. Crystal growth of phenacene molecules and topological images of crystals ....... 25
2-1. Growth of phenacene single crystals ............................................................................... 25
2-2. Melt growth method for single crystal growth ................................................................. 26
2-3. Solution process for single crystal growth ...................................................................... 27
2-4. Physical vapour transport method for single crystal growth............................................ 27
2-5. Physical vapour transport method used in this study ....................................................... 28
2-6. Optical microscope images of phenacene single crystals ................................................. 29
2-7. Atomic force microscope (AFM) images of phenacene single crystals ............................. 30
2-8. X-ray diffraction patterns for [6]phenacene and [7]phrnacene single crystals ................ 31
References ............................................................................................................................ 33
Chapter 3. Electronic structures of phenacene single crystals ............................................... 47
3-1. Electronic structures of phenacene molecules determined by photoelectron yield
spectroscopy and optical absorption under atmospheric condition ......................................... 47

3-2. Electronic structures of phenacene molecules determined by ultra-high vacuum
photoemission spectroscopy................................................................................................... 48
3-3. Angle-resolved photoemission spectroscopy (ARPES) of picene solids ............................ 49
References ............................................................................................................................ 51
Chapter 4. Theoretical bases for FET .................................................................................... 59
4-1. Explanation of technical terms in FET ............................................................................ 59
4-1-1. Field-effect mobility ................................................................................................ 59
4-1-2. Threshold voltage and on-off ratio ........................................................................... 60
4-1-3. Subthreshold swing ................................................................................................. 61
4-2. Theoretical background of FET ...................................................................................... 61
4-3. Evaluation of carrier injection barrier height ................................................................. 63
References ............................................................................................................................ 65
Chapter 5. Fundamental FET characteristics of phenacene single crystal FETs.................. 73
5-1. Common experimental techniques used in chapters 5 to 11 ............................................. 73
5-2. Fundamental FET characteristics of picene single crystal FET ....................................... 75
5-2-1. Introduction ............................................................................................................ 75
5-2-2. Experimental section ............................................................................................... 76
5-2-3. Results and discussion ............................................................................................. 77
5-3. Fundamental FET characteristics of [6]phenacene and [7]phenacene single crystal FETs
............................................................................................................................................. 78
5-3-1. Introduction ............................................................................................................ 78
5-3-2. Experimental section ............................................................................................... 78
5-4. Conclusion on fundamental FET characteristics ............................................................. 80
References ............................................................................................................................ 81

Chapter 6. Interface modification with electron acceptor and donor in phenacene single
crystal FETs ............................................................................................................................ 93
6-1. FET characteristics of phenacene single crystal FETs in which electron acceptor or donor
is inserted .............................................................................................................................. 93
6-1-1. Introduction ............................................................................................................ 93
6-1-2. Experimental ........................................................................................................... 94
6-2. FET characteristics of [7]phenacene single crystal FETs in which Et2TCNQ is inserted:
the observation of excellent FET characteristics .................................................................... 98
6-3. Conclusion ..................................................................................................................... 98
References ............................................................................................................................ 99
Chapter 7. Systematic control of hole-injection barrier height with electron donors and
acceptors in [7]phenacene single crystal EFTs ..................................................................... 109
7-1. Introduction ................................................................................................................. 109
7-2. Experimental ................................................................................................................ 110
7-3. Results and Discussion ................................................................................................. 111
7-3-1. Evaluation of in [7]phenacene single crystal FETs with / without insertion
materials ......................................................................................................................... 111
7-3-2. Variation of for insertion materials with different redox potentials ............. 113
7-3-3. Temperature dependence of and the distinction of Schottky barrier and
tunnelling barrier ............................................................................................................ 114
7-3-4. VG dependence of and influence of accumulated holes in channel range ..... 115
7-3-5. A correlation between FET parameters and Eredox .................................................. 116
7-3-6. Effect of crystal thickness on hole-injection barrier height ..................................... 118
7-4. Conclusion ................................................................................................................... 119
References .......................................................................................................................... 120

Chapter 8. Low voltage operation

Study on field-effect transistors ... Transistor operation in Si MOS field-effect transistor .....2...

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