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TPS1120, TPS1120YDUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

SLVS080A MARCH 1994 REVISED AUGUST 1995

1POST OFFICE BOX 655303 DALLAS, TEXAS 75265

D Low rDS(on) . . . 0.18 at VGS = 10 V

D 3-V Compatible

D Requires No External VCC

DTTL and CMOS Compatible Inputs

D VGS(th) = 1.5 V Max

D ESD Protection Up to 2 kV perMIL-STD-883C, Method 3015

description

The TPS1120 incorporates two independentp-channel enhancement-mode MOSFETs thathave been optimized, by means of the TexasInstruments LinBiCMOS process, for 3-V or 5-Vpower distribution in battery-powered systems. With a maximum VGS(th) of 1.5 V and an IDSS of only 0.5 A,the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, wheremaximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostaticdischarge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120

includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, andPCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs insmall-outline integrated circuit SOIC packages.

The TPS1120 is characterized for an operating junction temperature range, TJ, from 40C to 150C.

AVAILABLE OPTIONS

PACKAGED DEVICES

TJ SMALL OUTLINE

(D)

(Y)

40C to 150C TPS1120D TPS1120Y

The D package is available taped and reeled. Add an R suffix to device

type (e.g., TPS1120DR). The chip form is tested at 25C.

Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic

fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to

MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than

maximum-rated voltages to these high-impedance circuits.

LinBiCMS is a trademark of Texas Instruments Incorporated.

Copyright 1995, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.

1

2

3

4

8

7

6

5

1SOURCE

1GATE

2SOURCE

2GATE

1DRAIN

1DRAIN

2DRAIN

2DRAIN

D PACKAGE

(TOP VIEW)

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TPS1120, TPS1120YDUAL P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS080A MARCH 1994 REVISED AUGUST 1995

2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265

schematic

1GATE

1SOURCE

1DRAIN

ESD-

ProtectionCircuitry

2GATE

2SOURCE

2DRAIN

ESD-

ProtectionCircuitry

For all applications, both drain pins for each device should be connected.

TPS1120Y chip informationThis chip, when properly assembled, displays characteristics similar to the TPS1120C. Thermal compressionor ultrasonic bonding may be used on the doped aluminum bonding pads. The chip may be mounted withconductive epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 MILS TYPICAL

BONDING PADS: 4 4 MILS MINIMUM

TJmax = 150C

TOLERANCES ARE 10%

ALL DIMENSIONS ARE IN MILS

TPS1120Y

(2)

(6)

(1)

(3)

(7)

(8)

(5)(4)

1DRAIN1SOURCE

1GATE

2SOURCE

2GATE

1DRAIN

2DRAIN

2DRAIN

57

64

(2)

(1)

(3)

(4)

(6)

(7)

(8)

(5)

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absolute maximum ratings over operating free-air temperature (unless otherwise noted)

UNIT

Drain-to-source voltage, VDS 15 V

Gate-to-source voltage, VGS 2 or 15 V

TA = 25C 0.39

GS= .

TA = 125C 0.21

TA = 25C 0.5

GS = TA = 125C 0.25

on nuous ran curren , eac evce J = , DTA = 25C 0.74

GS = .TA = 125C 0.34

TA = 25C 1.17GS =

TA = 125C 0.53

Pulse drain current, ID TA = 25C 7 A

Continuous source current (diode conduction), IS TA = 25C 1 A

Continuous total power dissipation See Dissipation Rating Table

Storage temperature range, Tstg 55 to 150 C

Operating junction temperature range, TJ 40 to 150 COperating free-air temperature range, TA 40 to 125 C

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 C

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

DISSIPATION RATING TABLE

PACKAGETA 25C

POWER RATING

DERATING FACTOR

ABOVE TA = 25C

TA = 70C

POWER RATING

TA = 85C

POWER RATING

TA = 125C

POWER RATING

D 840 mW 6.71 mW/ C 538 mW 437 mW 169 mW

Maximum values are calculated using a derating factor based on RJA = 149C/W for the package. These devices are

mounted on an FR4 board with no special thermal considerations.

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electrical characteristics at TJ = 25C (unless otherwise noted)

static

TPS1120

MIN TYP MAX

VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 A 1 1.25 1.50 V

VSD Source-to-drain voltage (diode forward voltage) IS = 1 A, VGS = 0 V 0.9 V

IGSS Reverse gate current, drain short circuited to source VDS = 0 V, VGS = 12 V 100 nA

VDS = 12 V, TJ = 25C 0.5DSS ero-ga e-vo age ra n curren VGS = 0 V TJ = 125C 10

VGS = 10 V ID = 1.5 A 180

VGS = 4.5 V ID = 0.5 A 291 400rDS(on) Static drain-to-source on-state resistance

VGS = 3 V 476 700m

VGS = 2.7 VD = .

606 850

gfs Forward transconductance VDS = 10 V, ID = 2 A 2.5 S

Pulse test: pulse width 300 s, duty cycle 2%

static

TPS1120Y

MIN TYP MAX

VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 A 1.25 V

VSD Source-to-drain voltage (diode forward voltage) IS = 1 A, VGS = 0 V 0.9 V

VGS = 10 V ID = 1.5 A 180

VGS = 4.5 V ID = 0.5 A 291rDS(on) a c ran- o-source on-s a e res s ance

VGS = 3 V 476m

VGS = 2.7 VD = .

606

gfs Forward transconductance VDS = 10 V, ID = 2 A 2.5 S

Pulse test: pulse width 300 s, duty cycle 2%

dynamic

TPS1120, TPS1120Y

MIN TYP MAX

Qg Total gate charge 5.45

Qgs Gate-to-source charge VDS = 10 V, VGS = 10 V, ID = 1 A 0.87 nC

Qgd Gate-to-drain charge 1.4

td(on) Turn-on delay time 4.5 ns

td(off) Turn-off delay time VDD = 10 V, RL = 10 , ID = 1 A,13 ns

tr Rise time RG = 6 , See Figures 1 and 2 10

tf Fall time 2 ns

trr(SD) Source-to-drain reverse recovery time IF = 5.3 A, di/dt = 100 A/ s 16

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PARAMETER MEASUREMENT INFORMATION

Figure 1. Switching-Time Test Circuit

RG

RL

VDD

+VGS

DUT

VDS

Figure 2. Switching-Time Waveforms

td(on)

tr

VDS

td(off)

tf

90%

10%

0 V

10 V

VGS

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TYPICAL CHARACTERISTICS

Table of Graphs

FIGURE

Drain current vs Drain-to-source voltage 3

Drain current vs Gate-to-source voltage 4

Static drain-to-source on-state resistance vs Drain current 5

Capacitance vs Drain-to-source voltage 6

Static drain-to-source on-state resistance (normalized) vs Junction temperature 7

Source-to-drain diode current vs Source-to-drain voltage 8

Static drain-to-source on-state resistance vs Gate-to-source voltage 9

Gate-to-source threshold voltage vs Junction temperature 10

Gate-to-source voltage vs Gate charge 11

5

4

2

1

0

3

0 1 2 3 4 5 6

DrainCurrentA

7

6

DRAIN CURRENT

vs

DRAIN-TO-SOURCE VOLTAGE

7 8 9 10

VGS = 6 V

ID

VDS Drain-to-Source Voltage V

VGS = 8 V

VGS = 7 V

VGS = 3 V

VGS = 4 V

VGS = 2 V

VGS = 5 V

TJ = 25C

Figure 3 Figure 4

0 2 3 5

DRAIN CURRENT

vs

GATE-TO-SOURCE VOLTAGE

7 1 4 6

DrainCurrentA

ID

VGS Gate-to-Source Voltage V

TJ = 150CTJ = 25C

TJ = 40C

VDS = 10 V

0

5

4

2

1

3

7

6

All characteristics data applies for each independent MOSFET incorporated on the TPS1120.

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TYPICAL CHARACTERISTICS

0.3

0.2

0.1

0 0.1 1

0.4

0.5

STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE

vs

DRAIN CURRENT

0.6

10

ID Drain Current A

0.7

VGS = 2.7 V

VGS = 3 V

VGS = 4.5 V

VGS = 10 V

TJ = 25C

StaticDrain-to-Source

rDS(on)

On-StateResistance

Figure 5

200

150

50

00 1 2 3 4 5 6

CCapacitancepF 250

300

CAPACITANCE

vs


350

7 8 9 12

100

10 11

Coss


Ciss

Crss

VGS = 0f = 1 MHzTJ = 25C

Crss + Cgd, Coss + Cds

)

Cgs Cgd

Cgs ) Cgd C

ds)

Cgd

Ciss

+Cgs ) Cgd

, Cds(shorted)

Figure 6

Figure 7

1.2

0.9

0.8

0.6

1.3

1.4

STATIC DRAIN-TO-SOURCE

ON-STATE RESISTANCE (NORMALIZED)

vs

JUNCTION TEMPERATURE

1.5

1.1

1

0.7

50 0 50 100 150

TJ Junction Temperature C

VGS = 10 VID = 1A

StaticDrain-to-Source

rDS(o

n)

On-StateResistance(Normalized)

0.10 0.6 1.2 1.8

So

urce-to-DrainDiodeCurrentA

SOURCE-TO-DRAIN DIODE CURRENT

vs

SOURCE-TO-DRAIN VOLTAGE

1

10

0.2 0.4 0.8 1 1.4 1.6

ISD

VSD Source-to-Drain Voltage V

Pulse Test

TJ = 150C

TJ = 25C

TJ = 40C

Figure 8

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THERMAL INFORMATION

NOTE A: FR4-board-mounted only

1

0.1

0.001

10

0.1 1 10 100

DrainCurrentA

DRAIN CURRENT

vs


ID


0.001 s

0.01 s

0.1 s

1 s

10 s

DC

TJ = 150

CTA = 25C

Single PulseSee Note A

Figure 12

10

1

0.1

100

0.001 0.01 0.1 1 10

TRANSIENT JUNCTION-TO-AMBIENT

THERMAL IMPEDANCE

vs

PULSE DURATION

tw Pulse Duration s

TransientJunction-to-Ambient

Z

C/W

JA

Single PulseSee Note A

ThermalImpedance

Figure 13

NOTE A: FR4-board-mounted only

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THERMAL INFORMATION

The profile of the heat sinks used for thermal measurements is shown in Figure 14. Board type is FR4 with 1-oz copperand 1-oz tin/lead (63/37) plate. Use of vias or through-holes to enhance thermal conduction was avoided.

Figure 15 shows a family of RJAcurves. The RJA was obtained for various areas of heat sinks while subject to airflow. Power remained fixed at 0.25 W per device or 0.50 W per package. This testing was done at 25C.

As Figure 14 illustrates, there are two separated heat sinks for each package. Each heat sink is coupled to the leadthat is internally tied to a single MOSFET source and is half the total area, as shown in Figure 15. For example, if thetotal area shown in Figure 15 is 4 cm2, each heat sink is 2 cm2.

1DRAIN

2DRAIN

1SOURCE

1GATE

2GATE

The Combined Area

of These Two Heat

Sinks Is 4 cm2

TPS1120D ICHS: 4 cm2

8P SOIC Thermal Analysis

2 cm

2SOURCE

Figure 14. Profile of Heat Sinks

70

60

500 50 100 150

80

90

THERMAL RESISTANCE, JUNCTION-TO-AMBIENT

vsAIRFLOW, 25C

100

200 250 300

Airflow, 25C ft/min

110

120

ThermalR

esistance,Junction-to-Ambient

C/W

R

130

140

150

TJ = 25CP = 0.5 WHeat Sink Areasas Shown

JA

0.5 cm2

1 cm2

2 cm2

4 cm2

0 cm2

8 cm2

Figure 15

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THERMAL INFORMATION

Figure 16 illustrates the thermally enhanced (SO) lead frame. Attaching the two MOSFET dies directly to the sourceterminals allows maximum heat transfer into a power plane.

Lead 8

Lead 7

Lead 6

Lead 5

Lead 1

Lead 2

Lead 3

Lead 4

1GATE

1SOURCE

2GATE

2SOURCE

1DRAIN

1DRAIN

2DRAIN

2DRAIN

MOSFET 2

MOSFET 1

Pad 1

Pad 1

Figure 16. TPS1120 Dual MOSFET SO-8 Lead Frame

APPLICATION INFORMATION

Load

3 V or 5 V

Microcontroller

Figure 17. Notebook Load Management

MicrocontrollerCharge

Pump

5 V

4 V GaAs FET

Amplifier

Driver

Figure 18. Cellular Phone Output Drive

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PACKAGING INFORMATION

Orderable Device Status (1) PackageType

PackageDrawing

Pins PackageQty

Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)

TPS1120D ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TPS1120DG4 ACTIVE SOIC D 8 75 Green (RoHS &no Sb/Br)


TPS1120DR ACTIVE SOIC D 8 2500 Green (RoHS &no Sb/Br)


TPS1120DRG4 ACTIVE SOIC D 8 2500 Green (RoHS &no Sb/Br)


(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part ina new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2)Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check

http://www.ti.com/productcontent for the latest availability information and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirementsfor all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be solderedat high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die andpackage, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHScompatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flameretardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3)MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder

temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it isprovided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to theaccuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to takereasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis onincoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limitedinformation may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TIto Customer on an annual basis.

PACKAGE OPTION ADDENDUM

www.ti.com 17-Apr-2006

Addendum-Page 1
http://www.ti.com/productcontenthttp://www.ti.com/productcontent

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TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0 (mm) B0 (mm) K0 (mm) P1(mm)

W(mm) Q

TPS1120DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0

PACKAGE MATERIALS INFORMATION

www.ti.com 11-Mar-2008

Pack Materials-Page 1

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*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TPS1120DR SOIC D 8 2500 346.0 346.0 29.0

PACKAGE MATERIALS INFORMATION

www.ti.com 11-Mar-2008

Pack Materials-Page 2

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I M P O R T A N T N O T I C E

T e x a s I n s t r u m e n t s I n c o r p o r a t e d a n d i t s s u b s i d i a r i e s ( T I ) r e s e r v e t h e r i g h t t o m a k e c o r r e c t i o n s , m o d i f i c a t i o n s , e n h a n c e m e n t s , i m p r o v e m e n t s , a n d o t h e r c h a n g e s t o i t s p r o d u c t s a n d s e r v i c e s a t a n y t i m e a n d t o d i s c o n t i n u e a n y p r o d u c t o r s e r v i c e w i t h o u t n o t i c e . C u s t o m e r s s h o u l do b t a i n t h e l a t e s t r e l e v a n t i n f o r m a t i o n b e f o r e p l a c i n g o r d e r s a n d s h o u l d v e r i f y t h a t s u c h i n f o r m a t i o n i s c u r r e n t a n d c o m p l e t e . A l l p r o d u c t s a r e s o l d s u b j e c t t o T I s t e r m s a n d c o n d i t i o n s o f s a l e s u p p l i e d a t t h e t i m e o f o r d e r a c k n o w l e d g m e n t .

T I w a r r a n t s p e r f o r m a n c e o f i t s h a r d w a r e p r o d u c t s t o t h e s p e c i f i c a t i o n s a p p l i c a b l e a t t h e t i m e o f s a l e i n a c c o r d a n c e w i t h T I s s t a n d a r d

w a r r a n t y . T e s t i n g a n d o t h e r q u a l i t y c o n t r o l t e c h n i q u e s a r e u s e d t o t h e e x t e n t T I d e e m s n e c e s s a r y t o s u p p o r t t h i s w a r r a n t y . E x c e p t w h e r e m a n d a t e d b y g o v e r n m e n t r e q u i r e m e n t s , t e s t i n g o f a l l p a r a m e t e r s o f e a c h p r o d u c t i s n o t n e c e s s a r i l y p e r f o r m e d .

T I a s s u m e s n o l i a b i l i t y f o r a p p l i c a t i o n s a s s i s t a n c e o r c u s t o m e r p r o d u c t d e s i g n . C u s t o m e r s a r e r e s p o n s i b l e f o r t h e i r p r o d u c t s a n d a p p l i c a t i o n s u s i n g T I c o m p o n e n t s . T o m i n i m i z e t h e r i s k s a s s o c i a t e d w i t h c u s t o m e r p r o d u c t s a n d a p p l i c a t i o n s , c u s t o m e r s s h o u l d p r o v i d e a d e q u a t e d e s i g n a n d o p e r a t i n g s a f e g u a r d s .

T I d o e s n o t w a r r a n t o r r e p r e s e n t t h a t a n y l i c e n s e , e i t h e r e x p r e s s o r i m p l i e d , i s g r a n t e d u n d e r a n y T I p a t e n t r i g h t , c o p y r i g h t , m a s k w o r k r i g h t , o r o t h e r T I i n t e l l e c t u a l p r o p e r t y r i g h t r e l a t i n g t o a n y c o m b i n a t i o n , m a c h i n e , o r p r o c e s s i n w h i c h T I p r o d u c t s o r s e r v i c e s a r e u s e d . I n f o r m a t i o np u b l i s h e d b y T I r e g a r d i n g t h i r d - p a r t y p r o d u c t s o r s e r v i c e s d o e s n o t c o n s t i t u t e a l i c e n s e f r o m T I t o u s e s u c h p r o d u c t s o r s e r v i c e s o r a w a r r a n t y o r e n d o r s e m e n t t h e r e o f . U s e o f s u c h i n f o r m a t i o n m a y r e q u i r e a l i c e n s e f r o m a t h i r d p a r t y u n d e r t h e p a t e n t s o r o t h e r i n t e l l e c t u a l p r o p e r t y o f t h e t h i r d p a r t y , o r a l i c e n s e f r o m T I u n d e r t h e p a t e n t s o r o t h e r i n t e l l e c t u a l p r o p e r t y o f T I .

R e p r o d u c t i o n o f T I i n f o r m a t i o n i n T I d a t a b o o k s o r d a t a s h e e t s i s p e r m i s s i b l e o n l y i f r e p r o d u c t i o n i s w i t h o u t a l t e r a t i o n a n d i s a c c o m p a n i e d b y a l l a s s o c i a t e d w a r r a n t i e s , c o n d i t i o n s , l i m i t a t i o n s , a n d n o t i c e s . R e p r o d u c t i o n o f t h i s i n f o r m a t i o n w i t h a l t e r a t i o n i s a n u n f a i r a n d d e c e p t i v e b u s i n e s s p r a c t i c e . T I i s n o t r e s p o n s i b l e o r l i a b l e f o r s u c h a l t e r e d d o c u m e n t a t i o n . I n f o r m a t i o n o f t h i r d p a r t i e s m a y b e s u b j e c t t o a d d i t i o n a l r e s t r i c t i o n s .

R e s a l e o f T I p r o d u c t s o r s e r v i c e s w i t h s t a t e m e n t s d i f f e r e n t f r o m o r b e y o n d t h e p a r a m e t e r s s t a t e d b y T I f o r t h a t p r o d u c t o r s e r v i c e v o i d s a l l

e x p r e s s a n d a n y i m p l i e d w a r r a n t i e s f o r t h e a s s o c i a t e d T I p r o d u c t o r s e r v i c e a n d i s a n u n f a i r a n d d e c e p t i v e b u s i n e s s p r a c t i c e . T I i s n o t r e s p o n s i b l e o r l i a b l e f o r a n y s u c h s t a t e m e n t s .

T I p r o d u c t s a r e n o t a u t h o r i z e d f o r u s e i n s a f e t y - c r i t i c a l a p p l i c a t i o n s ( s u c h a s l i f e s u p p o r t ) w h e r e a f a i l u r e o f t h e T I p r o d u c t w o u l d r e a s o n a b l y b e e x p e c t e d t o c a u s e s e v e r e p e r s o n a l i n j u r y o r d e a t h , u n l e s s o f f i c e r s o f t h e p a r t i e s h a v e e x e c u t e d a n a g r e e m e n t s p e c i f i c a l l y g o v e r n i n g s u c h u s e . B u y e r s r e p r e s e n t t h a t t h e y h a v e a l l n e c e s s a r y e x p e r t i s e i n t h e s a f e t y a n d r e g u l a t o r y r a m i f i c a t i o n s o f t h e i r a p p l i c a t i o n s , a n d a c k n o w l e d g e a n d a g r e e t h a t t h e y a r e s o l e l y r e s p o n s i b l e f o r a l l l e g a l , r e g u l a t o r y a n d s a f e t y - r e l a t e d r e q u i r e m e n t s c o n c e r n i n g t h e i r p r o d u c t s a n d a n y u s e o f T I p r o d u c t s i n s u c h s a f e t y - c r i t i c a l a p p l i c a t i o n s , n o t w i t h s t a n d i n g a n y a p p l i c a t i o n s - r e l a t e d i n f o r m a t i o n o r s u p p o r t t h a t m a y b e p r o v i d e d b y T I . F u r t h e r , B u y e r s m u s t f u l l y i n d e m n i f y T I a n d i t s r e p r e s e n t a t i v e s a g a i n s t a n y d a m a g e s a r i s i n g o u t o f t h e u s e o f T I p r o d u c t s i n s u c h s a f e t y - c r i t i c a l a p p l i c a t i o n s .

T I p r o d u c t s a r e n e i t h e r d e s i g n e d n o r i n t e n d e d f o r u s e i n m i l i t a r y / a e r o s p a c e a p p l i c a t i o n s o r e n v i r o n m e n t s u n l e s s t h e T I p r o d u c t s a r e s p e c i f i c a l l y d e s i g n a t e d b y T I a s m i l i t a r y - g r a d e o r " e n h a n c e d p l a s t i c . " O n l y p r o d u c t s d e s i g n a t e d b y T I a s m i l i t a r y - g r a d e m e e t m i l i t a r y s p e c i f i c a t i o n s . B u y e r s a c k n o w l e d g e a n d a g r e e t h a t a n y s u c h u s e o f T I p r o d u c t s w h i c h T I h a s n o t d e s i g n a t e d a s m i l i t a r y - g r a d e i s s o l e l y a t t h e B u y e r ' s r i s k , a n d t h a t t h e y a r e s o l e l y r e s p o n s i b l e f o r c o m p l i a n c e w i t h a l l l e g a l a n d r e g u l a t o r y r e q u i r e m e n t s i n c o n n e c t i o n w i t h s u c h u s e .

T I p r o d u c t s a r e n e i t h e r d e s i g n e d n o r i n t e n d e d f o r u s e i n a u t o m o t i v e a p p l i c a t i o n s o r e n v i r o n m e n t s u n l e s s t h e s p e c i f i c T I p r o d u c t s a r e d e s i g n a t e d b y T I a s c o m p l i a n t w i t h I S O / T S 1 6 9 4 9 r e q u i r e m e n t s . B u y e r s a c k n o w l e d g e a n d a g r e e t h a t , i f t h e y u s e a n y n o n - d e s i g n a t e d p r o d u c t s i n a u t o m o t i v e a p p l i c a t i o n s , T I w i l l n o t b e r e s p o n s i b l e f o r a n y f a i l u r e t o m e e t s u c h r e q u i r e m e n t s .

F o l l o w i n g a r e U R L s w h e r e y o u c a n o b t a i n i n f o r m a t i o n o n o t h e r T e x a s I n s t r u m e n t s p r o d u c t s a n d a p p l i c a t i o n s o l u t i o n s :

P r o d u c t s A p p l i c a t i o n s A m p l i f i e r s a m p l i f i e r . t i . c o m A u d i o w w w . t i . c o m / a u d i o D a t a C o n v e r t e r s d a t a c o n v e r t e r . t i . c o m A u t o m o t i v e w w w . t i . c o m / a u t o m o t i v e D S P d s p . t i . c o m B r o a d b a n d w w w . t i . c o m / b r o a d b a n d C l o c k s a n d T i m e r s w w w . t i . c o m / c l o c k s D i g i t a l C o n t r o l w w w . t i . c o m / d i g i t a l c o n t r o l I n t e r f a c e i n t e r f a c e . t i . c o m M e d i c a l w w w . t i . c o m / m e d i c a l L o g i c l o g i c . t i . c o m M i l i t a r y w w w . t i . c o m / m i l i t a r y P o w e r M g m t p o w e r . t i . c o m O p t i c a l N e t w o r k i n g w w w . t i . c o m / o p t i c a l n e t w o r k M i c r o c o n t r o l l e r s m i c r o c o n t r o l l e r . t i . c o m S e c u r i t y w w w . t i . c o m / s e c u r i t y R F I D w w w . t i - r f i d . c o m T e l e p h o n y w w w . t i . c o m / t e l e p h o n y R F / I F a n d Z i g B e e S o l u t i o n s w w w . t i . c o m / l p r f V i d e o & I m a g i n g w w w . t i . c o m / v i d e o

W i r e l e s s w w w . t i . c o m / w i r e l e s s

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