Slide 1 QCS Confidential Version 1.0 SCP Models QCS Introduction SCP Technology ROST TM Technology...

QCS Confidential Version 1.0

SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

QC Solutions, Inc.QC Solutions, Inc.

QCS Metrology Overview QCS Metrology Overview Surface Charge Profiler Surface Charge Profiler

QCS-7000 SeriesQCS-7000 Series


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

The Critical QuestionsThe Critical Questions

Who is QC Solutions?Who is QC Solutions?

What makes QCS unique?What makes QCS unique?

Where has QCS been successful?Where has QCS been successful?

How much money can be saved How much money can be saved using QCS tools?using QCS tools?

Who might benefit from QCS Who might benefit from QCS advanced technology?advanced technology?

What should you What should you reallyreally remember remember from this presentation?from this presentation?


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

QC Solutions – The CompanyQC Solutions – The Company

Founded in 1993 as R&D by Dr. Emil Kamieniecki to investigate Founded in 1993 as R&D by Dr. Emil Kamieniecki to investigate methods for non-contact surface charge monitoringmethods for non-contact surface charge monitoring

1997 introduction of ROST™ technology and shipment of first 1997 introduction of ROST™ technology and shipment of first commercial product for metrology of epitaxial layers (QCS-7000 commercial product for metrology of epitaxial layers (QCS-7000 series)series)

1999 relocation to larger facility in Billerica, MA including clean 1999 relocation to larger facility in Billerica, MA including clean room application center and manufacturingroom application center and manufacturing

By 2000, the QCS-7000 series has been accepted and is being By 2000, the QCS-7000 series has been accepted and is being used by more than 85% of the large volume wafer manufacturers.used by more than 85% of the large volume wafer manufacturers.

In Q1-2002 QC Solutions will expand into the ion implantation In Q1-2002 QC Solutions will expand into the ion implantation market utilizing its highly sensitive technology for low dose ion market utilizing its highly sensitive technology for low dose ion implant measurement.implant measurement.


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

What makes QCS unique?What makes QCS unique?

The answer is: The answer is:

The application of our patented The application of our patented technologies!technologies!

The SCP measurement The SCP measurement principleprinciple

In-Situ surface conditioningIn-Situ surface conditioning


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

SCP Principle of Operation SCP Principle of Operation

LIGHT SOURCE

SU

RF

AC

ED

EP

LE

TIO

N

LA

YE

R

P-TYPE Si BULK (NEUTRAL)

MODULATED BEAM OF COLLIMATED LIGHT[h > EG(Si)]

LIG

HT

PE

NE

TR

AT

ION

RE

GIO

N

+ + + + - + + + + + + - 100 m

COUNTER-ELECTRODE

Vs

EL

EC

TR

IC F

IEL

D

e

h

e

he

h

e

h

e

h

e

h

e

h~ 1 m


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

Where has QCS been Where has QCS been successful so far?successful so far?


In the Silicon Epitaxy Market In the Silicon Epitaxy Market where 85% of the large wafer where 85% of the large wafer manufacturers have accepted manufacturers have accepted and are using this technology.and are using this technology.


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

QCS - AcceptanceQCS - Acceptance

Acceptance of SCP as an epi qualification Acceptance of SCP as an epi qualification

metrology technique for their wafer suppliersmetrology technique for their wafer suppliers

[Jan ’2000] [Jan ’2000] Intel, SamsungIntel, Samsung

[June’2000] [June’2000] IBM - JapanIBM - Japan

NECNEC

TI - JapanTI - Japan

[Jan ’2001] [Jan ’2001] FairchildFairchild

and many more…and many more…


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

How much money can be How much money can be saved using QCS tools?saved using QCS tools?


Savings that are directly related to Savings that are directly related to reduced monitor wafer usage.reduced monitor wafer usage.

Savings attributed to preservation of Savings attributed to preservation of funds due to incident avoidance. funds due to incident avoidance.

Both can add up to much more than Both can add up to much more than you think!you think!


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

SCP Economics in 3 CompaniesSCP Economics in 3 Companies

Company A 8” CMOS EPI

Company B 8” CMOS EPI

Company C 4-6” Specialty EPI

Production Capacity 1,000K wafers/year

2,500K wafers/year

1,040K wafers/year

Monitor wafers used 17,800/year 1.7%

10,000/year 0.4%

62,400 /year 6%

Monitor wafer cost / year

$445, 000 @ $25/wafer

$250,000 @ $25/wafer

$312,000 @ $5 /wafer

Wafer preparation cost / year

$75,000 $42,000 $75,000

Product revenue gain from monitor wafer elimination

$1,780,000/year @ $100/wafer

$1,000,000/year @ $100/wafer

$2,496,000/year @ $40/wafer

Total Savings peryear

$ 2,300,000 $ 1,290,200 $ 2,883,000, ,


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

Cost of Real Wafer Quality Cost of Real Wafer Quality Incident in Device FabIncident in Device Fab11

33% of epi wafer shipments (more than 1500 33% of epi wafer shipments (more than 1500 wafers) were out-of-spec at the surface, resulting wafers) were out-of-spec at the surface, resulting in 33% yield reduction (0% yield on 1/3 of wafers)in 33% yield reduction (0% yield on 1/3 of wafers)

The SCP tool caught the problem while doing a The SCP tool caught the problem while doing a process evaluation process evaluation

The wafer manufacturer used Hg-CV for outgoing The wafer manufacturer used Hg-CV for outgoing quality control and did not see the problemquality control and did not see the problem

How much money did QCS save this customer on How much money did QCS save this customer on this ONE incident?this ONE incident?

1 Source: Fairchild Semiconductor, Inc. “Benefits of Non-destructive Resistivity Testing in Silicon Epitaxial Wafer Quality Control” Semicon West 2000 Silicon Symposium


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

$$ Saved Dollars $$$$ Saved Dollars $$

““Wafer Cost” = $160,000Wafer Cost” = $160,000(includes material, fab processing, and test)(includes material, fab processing, and test)

Packaging Cost = $160,000Packaging Cost = $160,000(wafers could be screened at fab)(wafers could be screened at fab)

Opportunity Cost = $270,000Opportunity Cost = $270,000(gross profit margin lost)(gross profit margin lost)

In Total: $590,000In Total: $590,000


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

Who might benefit from QCS Who might benefit from QCS advanced technology?advanced technology?


Everyone who produces Epi Everyone who produces Epi layers!layers!

• CMOS EpiCMOS Epi

• Thin EpiThin Epi

• Epi over Buried LayerEpi over Buried Layer


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

What should you What should you reallyreally remember about QC Solutions?remember about QC Solutions?

The answer is:

Superior technology

Reliable, field proven hardware

Attractive ROI through cost savings/cost avoidance


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

Principles of OperationPrinciples of Operation


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

SCP Principles of Operation SCP Principles of Operation

LIGHT SOURCE

SU

RF

AC

ED

EP

LE

TIO

N

LA

YE

R

P-TYPE Si BULK (NEUTRAL)

MODULATED BEAM OF COLLIMATED LIGHT[h > EG(Si)]

LIG

HT

PE

NE

TR

AT

ION

RE

GIO

N

+ + + + - + + + + + + - 100 m

COUNTER-ELECTRODE

Vs

EL

EC

TR

IC F

IEL

D

e

h

e

he

h

e

h

e

h

e

h

e

h~ 1 m


SCP Models

QCS Introduction

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ROSTTM Technology

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Examples

Reliability

Summary

SCP Block DiagramSCP Block Diagram

WAFER SUPPORT WITH INSULATING COATING

SIGNALPROCESSING

MOTIONCONTROLLER

PROBE MOTION CONTROL

SYSTEM CONTROL STATION

WAFER

LEDLIGHT SOURCE

DATA ACQUISITION

ELECTRICAL & OPTICAL CABLES

WAFER MOTION

NON-

CONTACT

PROBE


SCP Models

QCS Introduction

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Examples

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Summary

Surface Charge ProfileSurface Charge ProfileSPV Measured Surface CapacitanceSPV Measured Surface Capacitance

• High frequency surface photo voltage

• Low intensity: Vs < 0.05 kT/q

• Peak wavelength 450 nm

• Light penetration depth < 0.4 m

Vs Wd Cs

Wd-inv = ƒ(Nsc)

• No change of net wafer charge

( QWFR = 0)

• No external current flow

Illumination

~~~~

Wd

Vs Wd

h

e

h

Re

Rh

Dark

Bulkp-type

h

0Q +

-


SCP Models

QCS Introduction

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Examples

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SCP Principle of Operation: SummarySCP Principle of Operation: Summary

• Based on proprietary Based on proprietary phase-sensitive ac-SPVphase-sensitive ac-SPV principle principleSurface properties determined from analysis of Surface properties determined from analysis of magnitudemagnitude and and phasephase of of ac-Surface Photo Voltageac-Surface Photo Voltage

at high modulation frequency of light intensityat high modulation frequency of light intensity

at at small deviationsmall deviation from thermal equilibriumfrom thermal equilibrium

Phase shift Phase shift ss&& n/pn/p

ImVImVss && ss WWdd QQs s & N& Nscsc

• Non-destructiveNon-destructive measurement measurement

• Non-contactNon-contact

• No voltage applied or external current flowNo voltage applied or external current flow

• Measurements independent of the irradiated area (self- Measurements independent of the irradiated area (self- normalization)normalization)


SCP Models

QCS Introduction

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Examples

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Summary

SCP Measurements of n-Type SCP Measurements of n-Type WafersWafers

- kV

SILICON WAFER

gnd

Wire Corona Source

ControlGrid

Native Oxide

UV Illumination

SILICON WAFER

Native Oxide

Step 1. UV illuminationgrows native oxide

(~10 Å) in 5-10 min.

Step 2. Negatively chargedcorona is deposited on oxide to forminversion state.


SCP Models

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SCP Measurements of n-Type SCP Measurements of n-Type WafersWafers

0.0

0.1

0.2

0.3

0.4

0.5

0.6

Corona Charge Applied

Dep

leti

on

Wid

th (

mic

ron

s)

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

Inve

rse

Lif

etim

e (u

sec^

-1)

Depletion Width Inverse Lifetime

Wmax = 0.57 um

(2.5E+15/cm^3)


SCP Models

QCS Introduction

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Summary

Determination of Doping ConcentrationDetermination of Doping Concentrationfrom Maximum Depletion Layer Widthfrom Maximum Depletion Layer Width

0.01

0.1

1

10

100

1E+12 1E+13 1E+14 1E+15 1E+16 1E+17 1E+18 1E+19

Nsc (cm3)

Wd

(m

icro

ns

)


SCP Models

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ROST™ Principles of OperationROST™ Principles of Operation


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

ROST™ Technology OverviewROST™ Technology Overview

++ + +

+ + ++

--

SILICON

Start with ANY Oxide Layer

++ + +

+ + ++

-

--

+_

+_+_ +_

+_

+_

+_+_ + _

+_

+_+_-

SILICON

Formation of theDouble Layer

++ + +

+ + ++

--

-

+_ +_ +_ +_ +_ +_ +_

+_ + _

+_

+_+_-

SILICON

Specifically adsorbed ions

Non-specifically adsorbed ions

DoubleLayer

Double Layer


SCP Models

QCS Introduction

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Performance

Examples

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Summary

PHOTO-THERMAL TREATMENTROST™

++ + +

+ + ++

--

+

- - - - - - - -

+ ++

++

+- - --

-+

+++

+SILICON

-+_ +_ +_ +_ +_ +_ +_

+_ + _

+_

+_+_-

Heating effect

Optically generated electron-hole pairs

Illumination

ROST™ Technology OverviewROST™ Technology Overview

++ + +

+ + ++

--

SILICON

-

+_ +_ +_ +_+_ +_ +_

+_ + _

+_+_

+_-

Surface LayerDesorption

++ + +

+ + ++

--

-

+_ +_ +_ +_ +_ +_ +_

+_ + _

+_

+_+_-

SILICON

Specifically adsorbed ions

Non-specifically adsorbed ions

Double Layer


SCP Models

QCS Introduction

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Performance

Examples

Reliability

Summary

ROST™ Processing ChamberROST™ Processing Chamber

INFRARED SENSOR

WAFER

LAMP POWERCONTROLLER

ILLUMINATION (<30sec)

PROPRIATORY

OPTICAL

FILTER


SCP Models

QCS Introduction

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ROSTTM Technology

Performance

Examples

Reliability

Summary

SCP ModelsSCP Models


SCP Models

QCS Introduction

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ROSTTM Technology

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Summary

Wafer Monitoring SystemsWafer Monitoring Systems

• QCS-7200R p-type QCS-7200R p-type

100mm ~ 200mm wafers100mm ~ 200mm wafers

• QCS-7200C n-typeQCS-7200C n-type


• QCS-7200RC p and n-type QCS-7200RC p and n-type


QCS-7300R p-typeQCS-7300R p-type

200mm & 300mm wafers200mm & 300mm wafers


SCP Models

QCS Introduction

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ROSTTM Technology

Performance

Examples

Reliability

Summary

SCP Epi Monitoring CapabilitiesSCP Epi Monitoring Capabilities

• Measures active-device region of epi layersMeasures active-device region of epi layers SCP measured doping correlates with device SCP measured doping correlates with device

performance. performance.

Sensitive to over and under doping in the subsurface Sensitive to over and under doping in the subsurface region of the Epi layerregion of the Epi layer

• Epi over buried layerEpi over buried layer Eliminate need for monitor wafers, measure product Eliminate need for monitor wafers, measure product

waferswafers

• Thin EPI measurement capabilityThin EPI measurement capability Not affected by substrate/Epi transition regionNot affected by substrate/Epi transition region


SCP Models

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Measurement ParametersMeasurement Parameters

QCS-7000 Series tool provides various QCS-7000 Series tool provides various measurements, here is a list of some of measurements, here is a list of some of the most often usedthe most often used NNscsc - Doping Concentration - Doping Concentration ResRes - Resistivity (Ohms-cm)- Resistivity (Ohms-cm)

QQss - Surface Charge- Surface Charge

WWdd - Depletion Layer Width (u- Depletion Layer Width (um) 1/t1/t - Surface Recombination Lifetime- Surface Recombination Lifetime p/np/n - Conductivity type- Conductivity type


SCP Models

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SCP SpecificationsSCP Specifications

• Resistivity Repeatability with production wafers:Resistivity Repeatability with production wafers: p-type:p-type: 1%, 1 sigma <0.1 - >500 ohm-cm1%, 1 sigma <0.1 - >500 ohm-cm

n-type:n-type: 1%, 1 sigma <0.1 - 15 ohm-cm1%, 1 sigma <0.1 - 15 ohm-cm

1.5%, 1 sigma 15 - 30 ohm-cm1.5%, 1 sigma 15 - 30 ohm-cm

2%, 1 sigma 30 - 50 ohm-cm2%, 1 sigma 30 - 50 ohm-cm

• Surface Recombination Lifetime Surface Recombination Lifetime 0.5 - 1000 0.5 - 1000 secsec

• Throughput *Throughput * ~ 30 wph (p-type)~ 30 wph (p-type)

• Wafer SizesWafer Sizes 100 mm ~ 200 mm or 100 mm ~ 200 mm or

200 mm - 300 mm200 mm - 300 mm* Measurement resolution and wafer type dependant* Measurement resolution and wafer type dependant


SCP Models

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SCP ApplicationsSCP Applications

• Epi Wafer ManufacturingEpi Wafer Manufacturing

• Process monitoring of production wafersProcess monitoring of production wafers

• Process development / tool qualificationProcess development / tool qualification

• Specialty EpiSpecialty Epi

• Incoming inspection Incoming inspection

• Process development / tool qualificationProcess development / tool qualification

• In-line monitoring of product wafersIn-line monitoring of product wafers

• Ion ImplantationIon Implantation

• Implant monitoringImplant monitoring


SCP Models

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SCP PerformanceSCP Performance


SCP Models

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Customer Correlation ofCustomer Correlation of Resistivity Techniques Resistivity Techniques

QC

So

luti

on

s S

CP

Re

s (

Oh

m-c

m)

0.1

1

10

100

0 1 10 100

Hg C-V Res (Ohm-cm)

P-epiN-epi


SCP Models

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Resistivity Correlation between SCP and 4 PP

y = 0. 5191x + 0. 389R2 = 0. 9893

0

1

2

3

4

5

6

7

8

0 2 4 6 8 10 12 14

SCP (ohm-cm) on Production Wafer

4-Probe (ohm-cm) on Rs Monitor Wafer

Rs Spec by 4-Probe on Monitor WF : 5.80 - 8.20 ohm-cmRs Spec by SCP on Production WF : 3.40 - 4.65 ohm-cm

Single wafer reactor (AMAT-Centura) on 200 mm DUF wafer


SCP Models

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Summary

Resistivity Correlation between SCP and 4 PP

Rsh monitor waferRsh monitor wafer will move from Top to will move from Top to Bottom by Epi Run Bottom by Epi Run circulatorycirculatory

Productionwafer

Monitor Waferfor 4-Probe

TopMiddleBottom

SCP (ohm-cm) on Production Wafer

4-Probe (ohm-cm) on Rs Monitor Wafer

y = 0.4314x + 0.1788R2 = 0.9999

0

1

2

3

4

5

6

0 1 2 3 4 5 6 7 8 9 10 11 12

Rs Spec by 4-Probe on Monitor WF : 5.80 - 8.20 ohm-cmRs Spec by SCP on Production WF : 2.68 - 3.72 ohm-cm

Batch type reactor (PE-7700) on 150 mm DUF wafer


SCP Models

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SCP Spatial Resolution TestSCP Spatial Resolution Test

Wd

(um

)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

-10 -8 -6 -4 -2 0 2 4 6 8 10

Position along x diameter

Point PatternMedium Resolution Map Delta x = 0.4mmHigh Resolution Map Delta x = 0.25mm

2 mm

4 mm

N-typeSubstrate

Boron diffusedinto N-typeSubstrate


SCP Models

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Summary Examples of SCP Examples of SCP MeasurementMeasurement


SCP Models

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Summary

Epi Reactor QualificationEpi Reactor Qualification

Maps show depletion width of as-received wafers, measured by SCP 7200. Wafers are 200mm diameter

p-type.

Comparison of Silicon Epi Reactors

Reactor A Reactor B


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Summary

SUMITOMO METAL EPITECH ( EUROPE )

There are 3 wafers (points) measured per Epi run

SCP detected process anomaly not detected by Hg-CV resistivity variation

0.0

0.5

1.0

1.5

2.0

2.5

SC

P R

es

isti

vit

y (

Oh

m-c

m)

Control Limits (3 sigma) Product Specification

Epi Process Anomaly

Epi Process MonitoringEpi Process Monitoring


SCP Models

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Examples

Reliability

Summary

Epi Process MonitoringEpi Process Monitoring

2µm

Epi Surface

EpiSubstrate

Under-doped Region

SRP confirmed anomaly SRP confirmed anomaly detected by non-detected by non-destructive SCPdestructive SCP

The under-doping (high The under-doping (high resistance) occured less resistance) occured less than 1µm from the wafer than 1µm from the wafer surface.surface.

Epi resistivity varies from Epi resistivity varies from 0.8 ohm-cm to 2.4 ohm-0.8 ohm-cm to 2.4 ohm-cm.cm.

•SCP is equally sensitive to SCP is equally sensitive to over-dopingover-doping..

High-resolution Spreading Resistance Profile (SRP) of anomalous wafer from the previous

slide

Data courtesy bySUMITOMO METAL EPITECH (EUROPE )


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Summary

Customer Monitor Wafer and Customer Monitor Wafer and Production Buried Layer ResultsProduction Buried Layer Results

Buried Layer Product Wafer

SCP eliminates the need for monitor wafers!

Monitor Wafer


SCP Models

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Examples

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Summary

SCP Detects Auto DopingSCP Detects Auto Doping

Map of Doping Level Device BV pass/fail map

SCP detects edge autodoping that affects Breakdown Voltage

low resistivity area => low BV devices

MC. NGUYEN - SUMITOMO METAL EPITECH MC. NGUYEN - SUMITOMO METAL EPITECH 196th ECS Meeting, Honolulu, October 1999 196th ECS Meeting, Honolulu, October 1999


SCP Models

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Summary

MOSFET Breakdown Voltage vs. SCP MOSFET Breakdown Voltage vs. SCP Measured Epi ResistivityMeasured Epi Resistivity

Epi Resistivity (Ohm-cm)

BV

dss

(vo

lts)

Devices Exhibit Higher Rds-on

Wafer Averages Shown for a 24 Wafer Lot

Fairchild Semiconductor

Semicon West 2000 Silicon Wafer Symposium

Wafers measured by SCP prior to MOSFET fabrication


SCP Models

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ROSTTM Technology

Performance

Examples

Reliability

Summary

Autodoping Effects in a Barrel ReactorAutodoping Effects in a Barrel Reactor

• Undoped epi growth on n-type 6-inch substrates

• No backseal used

20 Ohm-cm Substrates

Row 1

Row 2

5000 Ohm-cm

4000

3000

2000

0

1000

0.02 Ohm-cm Substrates600 Ohm-cm

480

360

240

0

120

Gas Flow

Autodoping source is mainly the high doping level of substrates


SCP Models

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Summary

Susceptor Failure DetectionSusceptor Failure Detection

SusceptorRotation

Gas Flow

Location ofa Pinhole inthe susceptorcoating.

Resistivity Maps of 125mm N-type Epi(arranged as-grown in epi reactor)

95 Ohm-cm

90

85

80

75

70 Ohm-cm


SCP Models

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Examples

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Summary

Early Detection of a Pinhole in Early Detection of a Pinhole in Susceptor CoatingSusceptor Coating

• Doping maps are shown for N-Epi wafers grown Doping maps are shown for N-Epi wafers grown sequentially in the same susceptor position of a barrel sequentially in the same susceptor position of a barrel reactor. reactor.

• The effects of a pinhole can be observed in the doping The effects of a pinhole can be observed in the doping map before the pinhole itself can be visually detected. map before the pinhole itself can be visually detected.

• Blue regions of the maps meet customer specification.Blue regions of the maps meet customer specification.

Run # 2 Run # 3 Run # 4

(New Susceptor)

Run # 1


SCP Models

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Summary

Ion Implantation MonitoringIon Implantation Monitoring

Substrate

SCP Map After Ion Implantation before EpiSCP Map After Ion Implantation before Epi

SubstrateEpi

SCP Map After Ion Implantation & EpiSCP Map After Ion Implantation & Epi

Effect on yield of misclamping during Ion ImplantationEffect on yield of misclamping during Ion Implantation(Medium Current Implant)(Medium Current Implant)


SCP Models

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Examples

Reliability

Summary System ReliabilitySystem Reliability


SCP Models

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Summary

SCP System StabilitySCP System Stability

SCP RepeatabilitySCP Repeatability

3.20E+15

3.22E+15

3.24E+15

3.26E+15

3.28E+15

3.30E+15A

vera

ge

Nsc

(cm

^-3

)

Wafer QC1012SL1

• 50 50 sequential maps on sequential maps on n-type reference wafer.n-type reference wafer.

• Standard deviation = .17%.Standard deviation = .17%.

3.10E+15

3.15E+15

3.20E+15

3.25E+15

3.30E+15

Ave

rag

e N

sc (

cm^

-3)

Long Term StabilityLong Term Stability

Wafer SF111301

• 4 maps per day for 4 weeks on n-type reference wafer.

• Standard deviation = 0.46%.


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Daily RepeatabilityDaily RepeatabilityDay 1 Day 2 Day 3 Day 4Day 1 Day 2 Day 3 Day 4


SCP Models

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Examples

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Summary

SCP Measurement: No Particle ContaminationSCP Measurement: No Particle Contamination

LETI France December 97 SCP 7200

151413121110

987654321

151413121110

987654321

109876

15 wafers out of the shipment box SCP measurements on wafers 6 to 101000 point map 5 times

cassettebottom

top

After measurement same history for the 15 wafers

Incoming inspection : optical test with TENCORsum of defects - particles @ 0.2µm

Wafer12 345

Defects2 5 222

Wafer67 8910

Defects6 1 625

Wafer1112 131415

Defects0 2 447

Wafer12 345

Defects2 4 233

Wafer67 8910

Defects7 1 626

Wafer1112 131415

Defects0 5 16716

Inspection after measurement : optical test with TENCORsum of defects - particles @ 0.2µm


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

Statistical Process ControlStatistical Process Control

DopantGas Flow

Production wafers straight out of the epi reactor, specification: 54 Ohm.cm 10% 500 point maps.

3E14

2E14

SCP 500 point doping maps (at/cm3)

Multi-Position BarrelFace # 7

45

47

49

51

53

55

57

59

61

63

65

0 5 10 15 20 25 30 35 40 45 50

Wafer Number R

esis

tivity

(O

hm.c

m)

LCL : 54 - 10%

UCL : 54 + 10%

run 1 run 2 run 3

2.1

2.2

2.3

Top

Bottom

2.48E14

2.36E14

2.38E14

Spec.54


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

Statistical Process ControlStatistical Process Control

1.92E+15

1.93E+15

1.94E+15

1.95E+15

1.96E+15

1/10/199917:00

1/10/199919:00

1/10/199921:00

1/10/199923:00

1/11/19991:00

1/11/19993:00

1/11/19995:00

1/11/19997:00

1/11/19999:00

Ns

c (

cm

^-3

)

3*Sigma = 0.43%

Avg

Avg+3*s

Avg-3*s

600 measurements of QCS check-up wafer overnight.


SCP Models

QCS Introduction

SCP Technology

ROSTTM Technology

Performance

Examples

Reliability

Summary

Summary: QCS-7000 Surface Summary: QCS-7000 Surface Charge ProfilerCharge Profiler

• Non-destructive resistivity measurement of product wafersNon-destructive resistivity measurement of product wafers Elimination of monitor wafers and associated costsElimination of monitor wafers and associated costs

Conventional (CMOS) EpiConventional (CMOS) Epi Specialty Epi (devices: power, wireless, linear)Specialty Epi (devices: power, wireless, linear)

• FeaturesFeatures Rapid, full wafer mappingRapid, full wafer mapping

Aids process development, better visualize process resultsAids process development, better visualize process results

Shows subtle problems earlierShows subtle problems earlier Correlates extremely well with traditional measurement Correlates extremely well with traditional measurement

techniques.techniques. Even more important: SCP Maps correlate with FINAL device Even more important: SCP Maps correlate with FINAL device

parameters!parameters! Surface sensitivity detects deposition problems that may escape Surface sensitivity detects deposition problems that may escape

conventional techniquesconventional techniques No preprocessing required for fresh wafersNo preprocessing required for fresh wafers

Slide 1 QCS Confidential Version 1.0 SCP Models QCS Introduction SCP Technology ROST TM Technology...

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Transcript of Slide 1 QCS Confidential Version 1.0 SCP Models QCS Introduction SCP Technology ROST TM Technology...