N-C hannel Logic Level E nhancement Mode F ield E ffect T rans istor

AB S OLUT E MAXIMUM R AT ING S (T C =25 C unless otherwise noted)

T HE R MAL C HAR AC T E R IS T IC S

T hermal R es istance, J unction-to-C ase

T hermal R es istance, J unction-to-Ambient

R J C

R J A

2.5

62.5

/WC

/WC

30

P arameter S ymbol Limit Unit

Drain-S ource Voltage V DS V

G ate-S ource Voltage V G S 20 V

-P ulsed

ID 56 A

IDM 168 A

Drain-S ource Diode F orward C urrent IS 60 A

Maximum P ower Diss ipation P D W

Operating and S torage Temperature R ange T J , T S T G -65 to 175 C

@ T c=25 C 75

Drain C urrent-C ontinuous @ T J =125 Ca

S

G

D

S DB S E R IE ST O-263(DD-P AK )

GS

D

S DP S E R IE ST O-220

SDG

4

1

P R ODUC T S UMMAR Y

V DS S ID R DS (on) ( m W )

30V 56A 11 @ V G S = 10V

19 @ V G S = 4.5V

S DP /B 60N03L

F E AT UR E S

S uper high dense cell des ign for extremely low R DS (ON).

High power and current handling capability.

TO-220 & T O-263 package.

S amHop Microelectronics C orp.

Max

May,2004 ver1.1

S DP /B 60N03LE LE C T R IC AL C HAR AC T E R IS T IC S (T C 25 C unles s otherwis e noted)=

P arameter S ymbol C ondition Min Typ Max Unit

OF F C HAR AC T E R IS T IC S

Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID 250uA= 30 V

Zero G ate Voltage Drain C urrent IDS S V DS 24V, V G S 0V= = 10 uA

G ate-B ody Leakage IG S S V G S 16V, V DS 0V = = nA

ON C HAR AC T E R IS T IC S a

G ate T hreshold Voltage V G S (th) V DS V G S , ID = 250uA= 1 1.5 3 V

Drain-S ource On-S tate R es istance R DS (ON)V G S = 10V, ID = 30A 11

VG S = 4.5V, ID = 24A 16 19

On-S tate Drain C urrent ID(ON) V G S = 10V, V DS = 10V 60

32

A

SF orward Transconductance F Sg V DS = 10V, ID = 26A

DY NAMIC C HAR AC T E R IS T IC S b

Input C apacitance C IS S

C R S S

C OS SOutput C apacitance

R everse Transfer C apacitance

V DS =15V, V G S = 0Vf =1.0MHZ

1200 P F

550 P F

P F160

S WIT C HING C HAR AC T E R IS T IC S b

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OF F )

tf

V DD = 15V,ID = 1A,V G S = 10V,R G E N =60

25 ns

ns

ns

ns

60

Total G ate C harge

G ate-S ource C harge

G ate-Drain C harge

Qg

Qgs

Qgd

V DS =15V,ID =30A,V G S =10V nC

nC

nC

F all T ime

2

4

9.5

30.5

27.5

34.1

6.3

7

100

m ohm

m ohm

ohm

V DS =15V, ID = 30A,V G S =10V

V DS =15V,ID =30A,V G S =4.5V

nC

18.7

S DP /B 60N03L

P arameter S ymbol C ondition Min Typ Max Unit

E LE C T R IC AL C HAR AC T E R IS T IC S (T C =25 C unles s otherwis e noted)

DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S

Diode F orward Voltage V S D V G S = 0V, Is =26A 0.9 1.3 V

a

F igure 1. Output C haracteris tics F igure 2. Transfer C haracteris tics

F igure 3. C apacitance

V DS , Drain-to S ource Voltage (V )

V G S , G ate-to-S ource Voltage (V )V DS , Drain-to-S ource Voltage (V )

ID,

Dra

in C

urr

en

t(A

)C

, C

ap

aci

tan

ce (

pF

)

ID,

Dra

in C

urr

en

t (A

)

Notes

b.G uaranteed by des ign, not subject to production testing.a.P ulse Test:P ulse Width 300us , Duty C ycle 2%.

C iss

C oss

C rss

3000

2500

2000

1500

1000

500

00 105 15 20 25 30

50

40

30

20

10

00 0.5 1.0 1.5 2.0 2.5 3.0

V G S =10,9,8,7,6,5,4V

V G S =3V

20

15

10

5

01 2 3 4 5 6

25

25 C T J=125 C

3

4

2.2

1.8

1.4

1.0

0.6

0.2

0-50 0 50 100 125

T j( C )-25 25 75

-55 C

V G S =10V

ID=30A

F igure 4. On-R es istance Variation withTemperature

Dra

in-S

ou

rce

On

-Re

sist

an

ce

RD

S(O

N),

No

rma

lize

d

S DP /B 60N03L

with T emperatureF igure 6. B reakdown V oltage V ariation

with T emperature

Vth

, N

orm

aliz

ed

Ga

te-S

ou

rce

Th

resh

old

Vo

ltag

eg

FS

, T

ran

sco

nd

uct

an

ce (

S)

VG

S, G

ate

to S

ourc

e V

olta

ge (

V)

BV

DS

S,

No

rma

lize

dD

rain

-So

urc

e B

rea

kdo

wn

Vo

ltag

eIs

, Sou

rce-

drai

n cu

rren

t (A

)

F igure 7. T rans conductance V ariation with Drain C urrent

IDS , Drain-S ource C urrent (A)

F igure 9. G ate C harge Q g, T otal G ate C harge (nC )

F igure 10. Maximum S afe O perating Area

V DS , Drain-S ource V oltage (V )

F igure 8. B ody Diode F orward V oltageV ariation with S ource C urrent

V S D, B ody Diode F orward V oltage (V )

T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

ID,

Dra

in C

urr

en

t (A

)

4

4

F igure 5. G ate T hres hold V ariation

50

40

30

20

10

00 10 20 30 40

50

10

1

0.10.4 0.6 0.8 1.0 1.2 1.4

10

8

6

4

2

00 5 10 15 20 25 30 35 40

V DS =15V

ID=30A100

200300

10

1

0.50.1 1 10 30 60

V DS =10V

V G S =10VS ingle P uls e

T c=25 C

R DS (O

N)L im

it

DC

100ms

10ms

1ms

100s

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6-50 -25 0 25 50 75 100 125

V DS =V G S

ID=250uA

-50 -25 0 25 50 75 100 125

1.15

1.10

1.05

1.00

0.95

0.90

0.85

ID=250uA

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms

t

V

V

t

td(on)

OUT

IN

on

r

10%

td(off)

90%

10% 10%

50% 50%

90%

toff

tf

90%

P ULS E WIDT H

5

INV E R T E D

Tra

nsie

nt T

herm

al Im

peda

nce

2

1

0.1

0.01

0.01 0.1 1 10 100 1000 10000

P DM

t1t2

S quare Wave P ulse Duration (msec)

F igure 13. Normalized T hermal T rans ient Impedance C urve

1. RJ C (t)=r (t) * RJ C2. RJ C =S ee Datasheet3. T J M-T C = P * RJ C (t)4. Duty C ycle, D=t1/t2

r(t)

,Nor

mal

ized

Effe

ctiv

e D=0.5

0.2

0.1

0.05

0.02

0.01

S ingle P ulse

V DD

R

DV

V

R

S

V

G

G S

IN

G E N

OUT

L

S DP /B 60N03L

6S DP /B 60N03L