PSMN2R0-30PL N-channel 30 V 2.1 mΩ logic level MOSFET · 2017. 5. 8. · PSMN2R0-30PL N-channel 30...

PSMN2R0-30PLN-channel 30 V 2.1 mΩ logic level MOSFETRev. 01 — 24 June 2009 Product data sheet

1. Product profile

1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

1.2 Features and benefits

High efficiency due to low switching and conduction losses

Suitable for logic level gate drive sources

1.3 Applications

DC-to-DC convertersLoad switiching

Motor controlServer power supplies

1.4 Quick reference data

[1] Continuous current is limited by package.

[2] Measured 3 mm from package.

Table 1. Quick referenceSymbol Parameter Conditions Min Typ Max UnitVDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V

ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1

[1] - - 100 A

Ptot total power dissipation

Tmb = 25 °C; see Figure 2 - - 211 W

Dynamic characteristicsQGD gate-drain charge VGS = 4.5 V; ID = 25 A;

VDS = 12 V; see Figure 13; see Figure 14

- 16 - nC

QG(tot) total gate charge - 55 - nC

Static characteristicsRDSon drain-source

on-state resistanceVGS = 4.5 V; ID = 15 A; Tj = 25 °C

- 2 2.8 mΩ

VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 12

[2] - 1.7 2.1 mΩ

Nexperia PSMN2R0-30PLN-channel 30 V 2.1 mΩ logic level MOSFET

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2. Pinning information

3. Ordering information

Table 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol1 G gate

SOT78 (TO-220AB)

2 D drain

3 S source

mb D mounting base; connected to drain

1 2

mb

3

S

D

G

mbb076

Table 3. Ordering informationType number Package

Name Description VersionPSMN2R0-30PL TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead

TO-220ABSOT78

Nexperia B.V. 2017. All rights reservedPSMN2R0-30PL_1

Product data sheet Rev. 01 — 24 June 2009 2 of 13


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4. Limiting values

[1] Continuous current is limited by package.

Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max UnitVDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 30 V

VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 30 V

VGS gate-source voltage -20 20 V

ID drain current VGS = 10 V; Tmb = 100 °C; see Figure 1 [1] - 100 A

VGS = 10 V; Tmb = 25 °C; see Figure 1 [1] - 100 A

IDM peak drain current tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3 - 943 A

Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 211 W

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C

Source-drain diodeIS source current Tmb = 25 °C [1] - 100 A

ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - 943 A

Avalanche ruggednessEDS(AL)S non-repetitive

drain-source avalanche energy

VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped

- 555 mJ

Fig 1. Normalized continuous drain current as a function of mounting base temperature

Fig 2. Normalized total power dissipation as a function of mounting base temperature

003aad248

0

50

100

150

200

250

0 50 100 150 200Tmb (°C)

ID (A)

(1)

Tmb (°C)0 20015050 100

03aa16

40

80

120

Pder(%)

0




©

5. Thermal characteristics

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

003aad295

1

10

102

103

104

10-1 1 10 102VDS (V)

ID (A)

Limit RDSon = VDS / ID

DC

100 ms

10 ms

1 ms

100 μs

10 μs

(1)

Table 5. Thermal characteristicsSymbol Parameter Conditions Min Typ Max UnitRth(j-mb) thermal resistance from

junction to mounting base

see Figure 4 - 0.41 0.71 K/W

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

003aad247

10-4

10-3

10-2

10-1

1

10-6 10-5 10-4 10-3 10-2 10-1 1 10tp (s)

Zth (j-mb) (K/W)

single shot

0.02

0.05

0.1

0.2

δ = 0.5

tpT

P

t

tpT

δ =




©

6. Characteristics

Table 6. CharacteristicsSymbol Parameter Conditions Min Typ Max UnitStatic characteristicsV(BR)DSS drain-source

breakdown voltageID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V

ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V

VGS(th) gate-source threshold voltage

ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 9; see Figure 10

1.3 1.7 2.15 V

ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10

0.5 - - V

ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10

- - 2.45 V

IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 3 µA

VDS = 30 V; VGS = 0 V; Tj = 125 °C - - 70 µA

IGSS gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C - - 100 nA

VGS = -16 V; VDS = 0 V; Tj = 25 °C - - 100 nA

RDSon drain-source on-state resistance

VGS = 4.5 V; ID = 15 A; Tj = 25 °C - 2 2.8 mΩ


- - 3 mΩ


[2] - 1.7 2.1 mΩ

RG gate resistance f = 1 MHz - 0.78 - Ω

Dynamic characteristicsQG(tot) total gate charge ID = 25 A; VDS = 12 V; VGS = 10 V;

see Figure 13; see Figure 14- 117 - nC

ID = 25 A; VDS = 12 V; VGS = 4.5 V; see Figure 13; see Figure 14

- 55 - nC

QGS gate-source charge ID = 25 A; VDS = 12 V; VGS = 4.5 V; see Figure 13; see Figure 14

- 17 - nC

QGS(th) pre-threshold gate-source charge

- 11 - nC

QGS(th-pl) post-threshold gate-source charge

- 6 - nC

QGD gate-drain charge - 16 - nC

VGS(pl) gate-source plateau voltage

VDS = 12 V; see Figure 13; see Figure 14 - 2.6 - V

Ciss input capacitance VDS = 12 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 15

- 6810 - pF

Coss output capacitance - 1410 - pF

Crss reverse transfer capacitance

- 650 - pF

td(on) turn-on delay time VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V; RG(ext) = 4.7 Ω

- 63 - ns

tr rise time - 125 - ns

td(off) turn-off delay time - 111 - ns

tf fall time - 59 - ns




©

[1] Tested to JEDEC standards where applicable.

[2] Measured 3 mm from package.

Source-drain diodeVSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;

see Figure 16- 0.76 1.2 V

trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 30 V

- 49 - ns

Qr recovered charge - 66 - nC

Table 6. Characteristics …continuedSymbol Parameter Conditions Min Typ Max Unit

Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values

Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values

Fig 7. Forward transconductance as a function of drain current; typical values

Fig 8. Drain source on-state resistance as a function of gate-source voltage; typical values

003aad249

0

20

40

60

80

100

0 0.5 1 1.5 2VDS (V)

ID (A)

VGS (V) =2.5 V

3

3.5

4

5

10

003aad254

0

20

40

60

80

100

0 1 2 3 4 5VGS (V)

ID (A)

Tj = 175 °C

25 °C

003aad257

0

55

110

165

220

0 25 50 75 100ID (A)

gfs(S)

003aad251

0

2

4

6

8

0 5 10 15VGS (V)

RDSon (mΩ)




©

Fig 9. Sub-threshold drain current as a function of gate-source voltage

Fig 10. Gate-source threshold voltage as a function of junction temperature

Fig 11. Normalized drain-source on-state resistance factor as a function of junction temperature

Fig 12. Drain-source on-state resistance as a function of drain current; typical values

003aab271

10-6

10-5

10-4

10-3

10-2

10-1

0 1 2 3VGS (V)

ID (A)

maxtypmin

003aac982

0

1

2

3

-60 0 60 120 180Tj (°C)

VGS(th)(V) max

typ

min

03aa27

0

0.5

1

1.5

2

−60 0 60 120 180Tj (°C)

a

003aad250

0

1

2

3

4

5

0 20 40 60 80 100ID (A)

RDSon(mΩ)

VGS (V) =10 V

3.5

3

5

4




©

Fig 13. Gate charge waveform definitions

Fig 14. Gate-source voltage as a function of gate charge; typical values

Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

Fig 16. Source current as a function of source-drain voltage; typical values

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

003aad255

0

2

4

6

8

10

0 30 60 90 120QG (nC)

VGS(V)

VDS = 12V

003aad253

102

103

104

10-1 1 10 102VDS (V)

C (pF)

Ciss

Crss

Coss

003aad256

0

20

40

60

80

100

0 0.5 1 1.5 2VSD (V)

IS (A)

Tj = 175 °C

25 °C




©

Fig 17. Input and reverse transfer capacitances as a function of gate-source voltage; typical values

003aad252

3000

6000

9000

12000

0 2.5 5 7.5 10VGS (V)

C (pF)

Ciss

Crss




©

7. Package outline

Fig 18. Package outline SOT78 (TO-220AB)

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION

ISSUE DATEIEC JEDEC JEITA

SOT78 SC-463-lead TO-220AB

SOT78

08-04-2308-06-13

Notes1. Lead shoulder designs may vary.2. Dimension includes excess dambar.

UNIT A

mm 4.74.11.401.25

0.90.6

0.70.4

16.015.2

6.65.9

10.39.7

15.012.8

3.302.79

3.83.5

A1

DIMENSIONS (mm are the original dimensions)

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b1(2)

1.61.0

c D

1.31.0

b2(2) D1 E e

2.54

L L1(1)L2(1)

max.

3.0

p q

3.02.7

Q

2.62.2

D

D1

q

p

L

1 2 3

L1(1)

b1(2)

(3×)

b2(2)

(2×)

e e

b(3×)

AE

A1

c

Q

L2(1)

mountingbase




©

8. Revision history

Table 7. Revision historyDocument ID Release date Data sheet status Change notice SupersedesPSMN2R0-30PL_1 20090624 Product data sheet - -




©

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com.

9.2 DefinitionsDraft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

9.3 DisclaimersGeneral — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

9.4 TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: [email protected]

Document status [1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.




11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .11.1 General description . . . . . . . . . . . . . . . . . . . . . .11.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .11.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .11.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .12 Pinning information. . . . . . . . . . . . . . . . . . . . . . .23 Ordering information. . . . . . . . . . . . . . . . . . . . . .24 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .35 Thermal characteristics . . . . . . . . . . . . . . . . . . .46 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .57 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .108 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 119 Legal information. . . . . . . . . . . . . . . . . . . . . . . .129.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .129.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .129.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .129.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .1210 Contact information. . . . . . . . . . . . . . . . . . . . . .12

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 24 June 2009

1. Product profile1.1 General description1.2 Features and benefits1.3 Applications1.4 Quick reference data

2. Pinning information3. Ordering information4. Limiting values5. Thermal characteristics6. Characteristics7. Package outline8. Revision history9. Legal information9.1 Data sheet status9.2 Definitions9.3 Disclaimers9.4 Trademarks

10. Contact information11. Contents

PSMN2R0-30PL N-channel 30 V 2.1 mΩ logic level MOSFET · 2017. 5. 8. · PSMN2R0-30PL N-channel 30...

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