BUK9M17-30E - NexperiaBUK9M17-30E N-channel 30 V, 17 mΩ logic level MOSFET in LFPAK33 19 September...

BUK9M17-30EN-channel 30 V, 17 mΩ logic level MOSFET in LFPAK3319 September 2016 Product data sheet

1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.

2. Features and benefits• Q101 compliant• Repetitive avalanche rated• Suitable for thermally demanding environments due to 175 °C rating• True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C

3. Applications• 12 V automotive systems• Motors, lamps and solenoid control• Transmission control• Ultra high performance power switching

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 30 V

ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 - - 37 A

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 44 W

Static characteristics

RDSon drain-source on-stateresistance

VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11 - 14 17 mΩ

Dynamic characteristics

QGD gate-drain charge ID = 10 A; VDS = 24 V; VGS = 5 V;Tj = 25 °C; Fig. 13; Fig. 14

- 3.7 - nC

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9M17-30EN-channel 30 V, 17 mΩ logic level MOSFET in LFPAK33

BUK9M17-30E All information provided in this document is subject to legal disclaimers.

Product data sheet 19 September 2016 2 / 13

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 S Source

2 S Source

3 S Source

4 G Gate

mb D Mounting base; connected todrain

1 432

LFPAK33 (SOT1210)

S

D

G

mbb076

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

BUK9M17-30E LFPAK33 Plastic single ended surface mounted package(LFPAK33); 8 leads

SOT1210

7. MarkingTable 4. Marking codesType number Marking code

BUK9M17-30E 91730E

8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 30 V

VDGR drain-gate voltage RGS = 20 kΩ - 30 V

DC; Tj ≤ 175 °C -10 10 VVGS gate-source voltage

Pulsed; Tj ≤ 175 °C [1][2] -15 15 V

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 44 W

VGS = 5 V; Tmb = 25 °C; Fig. 2 - 37 AID drain current

VGS = 5 V; Tmb = 100 °C; Fig. 2 - 26 A

IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 148 A





Symbol Parameter Conditions Min Max Unit

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C

Source-drain diode

IS source current Tmb = 25 °C - 37 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 148 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-sourceavalanche energy

ID = 37 A; Vsup ≤ 30 V; RGS = 50 Ω;VGS = 5 V; Tj(init) = 25 °C; unclamped;Fig. 4

[3][4] - 13.7 mJ

[1] Accumulated pulse duration up to 50 hours delivers zero defect ppm.[2] Significantly longer life times are achieved by lowering Tj and or VGS[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.[4] Refer to application note AN10273 for further information.

Tmb (°C)0 20015050 100

03aa16

40

80

120

Pder(%)

0

Fig. 1. Normalized total power dissipation as afunction of mounting base temperature

aaa-021184

0 25 50 75 100 125 150 175 2000

10

20

30

40

Tmb (°C)

ID(A)

VGS ≥ 5 V

Fig. 2. Continuous drain current as a function ofmounting base temperature





aaa-021186

10-1 1 10 10210-1

1

10

102

103

VDS (V)

ID(A)

DCDC

100 ms100 ms10 ms10 ms

1 ms1 ms

100 us100 us

tp = 10 ustp = 10 us

Limit RDSon = VDS / IDLimit RDSon = VDS / ID

Tmb = 25 °C; IDM is a single pulse

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltageaaa-021185

10-3 10-2 10-1 1 1010-2

10-1

1

10

102

tAL (ms)

IAL(A)

(1)(1)

(2)(2)

(3)(3)

(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche

Fig. 4. Avalanche rating; avalanche current as a function of avalanche time

9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistancefrom junction tomounting base

Fig. 5 - 2.77 3.4 K/W





aaa-021187

10-6 10-5 10-4 10-3 10-2 10-1 110-2

10-1

1

10

tp (s)

Zth(j-mb)(K/W)

single shotsingle shot

δ = 0.5δ = 0.5

0.20.2

0.10.1

0.050.05

0.020.02 P

ttpT

tpδ = T

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - VV(BR)DSS drain-sourcebreakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V

ID = 1 mA; VDS = VGS; Tj = 25 °C;Fig. 9; Fig. 10

1.4 1.7 2.1 V

ID = 1 mA; VDS = VGS; Tj = -55 °C;Fig. 10

- - 2.45 V

VGS(th) gate-source thresholdvoltage

ID = 1 mA; VDS = VGS; Tj = 175 °C;Fig. 10

0.5 - - V

VDS = 30 V; VGS = 0 V; Tj = 25 °C - 0.01 1 µAIDSS drain leakage current

VDS = 30 V; VGS = 0 V; Tj = 175 °C - - 500 µA

VGS = 10 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current

VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 11 - 14 17 mΩ

VGS = 10 V; ID = 10 A; Tj = 25 °C;Fig. 11

- 11 14 mΩ

RDSon drain-source on-stateresistance

VGS = 5 V; ID = 10 A; Tj = 175 °C;Fig. 12

- - 32 mΩ

Dynamic characteristics

QG(tot) total gate charge - 8 - nC

QGS gate-source charge

ID = 10 A; VDS = 24 V; VGS = 5 V;Tj = 25 °C; Fig. 13; Fig. 14 - 1.7 - nC





Symbol Parameter Conditions Min Typ Max Unit

QGD gate-drain charge - 3.7 - nC

Ciss input capacitance - 545 725 pF

Coss output capacitance - 125 150 pF

Crss reverse transfercapacitance

VDS = 25 V; VGS = 0 V; f = 1 MHz;Tj = 25 °C; Fig. 15

- 85 117 pF

td(on) turn-on delay time - 6.3 - ns

tr rise time - 12.3 - ns

td(off) turn-off delay time - 12.2 - ns

tf fall time

VDS = 25 V; RL = 2.4 Ω; VGS = 5 V;RG(ext) = 5 Ω; Tj = 25 °C

- 9.8 - ns

Source-drain diode

VSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.85 1.2 V

trr reverse recovery time - 13.4 - ns

Qr recovered charge

IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;VDS = 25 V; Tj = 25 °C - 5 - nC

aaa-021188

0 1 2 3 40

10

20

30

40

VDS (V)

ID(A)

2.4 V2.4 V

2.6 V2.6 V

2.8 V2.8 V

VGS = 3 VVGS = 3 V

3.5 V3.5 V

4.5 V4.5 V10 V10 V

Tj = 25 °C

Fig. 6. Output characteristics; drain current as afunction of drain-source voltage; typical values

aaa-021189

0 2 4 6 8 10 12 14 160

25

50

75

100

125

150

VGS (V)

RDSon(mΩ)

Tj = 25 °C; ID = 10 A

Fig. 7. Drain-source on-state resistance as a functionof gate-source voltage; typical values





aaa-021202

0 1 2 3 40

5

10

15

20

25

30

VGS (V)

ID(A)

Tj = 25°CTj = 25°C175°C175°C

VDS = 12 V

Fig. 8. Transfer characteristics; drain current as afunction of gate-source voltage; typical values

003aah026

10-6

10-5

10-4

10-3

10-2

10-1

0 1 2 3VGS (V)

ID(A)

maxtypmin

Tj = 25 °C; VDS = 5 V

Fig. 9. Sub-threshold drain current as a function ofgate-source voltage

003aah025

0

0.5

1

1.5

2

2.5

3

-60 0 60 120 180Tj (°C)

VGS(th)

(V)

max

typ

min

ID = 1mA; VDS = VGS

Fig. 10. Gate-source threshold voltage as a function ofjunction temperature

aaa-021205

0 5 10 15 20 25 30 35 400

20

40

60

80

100

ID (A)

RDSon(mΩ) 2.6 V2.6 V 2.8 V2.8 V 3 V3 V 3.5 V3.5 V

4.5 V4.5 V

VGS = 10 VVGS = 10 V

Tj = 25 °C

Fig. 11. Drain-source on-state resistance as a functionof drain current; typical values





003aaj812

0

0.4

0.8

1.2

1.6

2

-60 0 60 120 180Tj (°C)

a

Fig. 12. Normalized drain-source on-state resistancefactor as a function of junction temperature

aaa-021209

0 3 6 9 12 150

2

4

6

8

10

QG (nC)

VGS(V)

24 V24 V

VDS = 14 VVDS = 14 V

Tj = 25 °C; ID = 10 A

Fig. 13. Gate-source voltage as a function of gatecharge; typical values

003aaa508

VGS

VGS(th)

QGS1

QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 14. Gate charge waveform definitions

aaa-021210

10-1 1 10 10210

102

103

VDS (V)

C(pF) CissCiss

CossCoss

CrssCrss

VGS = 0 V; f = 1 MHz

Fig. 15. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues





aaa-021211

0 0.2 0.4 0.6 0.8 1 1.20

10

20

30

40

VSD (V)

IS(A)

Tj = 25°CTj = 25°C175°C175°C

VGS = 0 V

Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values

11. Application informationFor guidance on how to use and understand this datasheet, please refer to applicationnote AN11158 "Understanding power MOSFET datasheet parameters".

http://www.nexperia.com/documents/application_note/an11158.pdf





12. Package outline

ReferencesOutlineversion

Europeanprojection Issue date

IEC JEDEC JEITA

SOT1210

sot1210_po

14-04-2516-08-09

Unit(1)

mmmaxnommin

0.90 0.10 2.4 0.20 0.300.65

A

Dimensions

Note1. Plastic or metal protrusions of 0.15 mm per side are not included.

Plastic single ended surface mounted package (LFPAK33); 8 leads SOT1210

A1 b(1)

0.35

b1(1) c c1 D ref D1 E(1) E1 e

0.650.502.60

e1 H

3.40 2.452.35 3.40

L1

0.25

Lp

0.500.20 0.10

w y

3.20 2.000.80 0.00 2.2 0.10 0.200.25 1.90

D2

3.20 0.13

L

0.65

0.45 0.30

0 5 mm2.5

scale

A

Xw A

mountingbase

E1

c1b1

b

A

E

L1

D1

D2

H(D)

L

e1

e

detail X

C cA1

LpCy

1 4

Fig. 17. Package outline LFPAK33 (SOT1210)





13. Legal information

13.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

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Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

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14. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................29 Thermal characteristics .........................................410 Characteristics .......................................................511 Application information .........................................912 Package outline ................................................... 1013 Legal information .................................................1113.1 Data sheet status ............................................... 1113.2 Definitions ...........................................................1113.3 Disclaimers .........................................................1113.4 Trademarks ........................................................ 12

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 19 September 2016

BUK9M17-30E - NexperiaBUK9M17-30E N-channel 30 V, 17 mΩ logic level MOSFET in LFPAK33 19 September...

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