Prashant Pal College of Technology GBPUA&T Pantnagar
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Transcript of Prashant Pal College of Technology GBPUA&T Pantnagar
Overview
What is SET?
How it works?
Logic Implementation
Programmable Logic Implementation
Fabrication
Applications
Limitations of SETs
Single Electron Transistor
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What is a Single Electron Transistor (SET)?
Device based on ‘Quantum mechanical principles’
Exploits ‘Quantum effect of tunneling’. Tunneling on purpose. one electron sufficient to define a logic
state. Tunneling : a discrete process
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Single Electron Transistor
The Tunneling Phenomenon
•Tunneling is possible because of the wave-like properties of matter.
•Quantum mechanics allows a small particle, such as an electron, to overcome a potential barrier larger than its kinetic energy.
•Transmission Probability: T ≈ 16ε(1 – ε)e-2κL
• Tunnelling on purpose: Make ‘T ‘ very high => Adjust device parameters
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Single Electron Transistor
Introduction to Single Electron Transistor:
A Quantum Dot(QD) or Island.
Two tunnels Junctions
A Gate electrode
Gate capacitor
( optional ) 2nd Gate electrode
Symmetric device : S and D interchangeable
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Single Electron Transistor
What Happens in SET..?
A SET is similar to a normal MOS transistor, except
1) the channel is replaced by a nano dot.
2) the dot is separated from source and drain by thin insulators (SiO2). An electron tunnels in two steps: source → dot → drain
3) The gate voltage Vg is used to control the charge on the gate-dot capacitor Cg .
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Single Electron Transistor
COULOMB BLOCKADE
Ec =e^2 /2Cg is the electrostatic energy needed for one electron of the "source" electrode to tunnel across the metal island and reach the "drain" electrode.
If this energy barrier is appreciably higher than the thermal fluctuation energy KBT, the island remains sensitive to the addition of just one extra electron to the millions it already contains.
And precisely one extra electron can be added in certain polarization conditions of the SET device.
If there is not enough electron energy, the transfer will be blocked.
This phenomenon is called the Coulomb blockade.
Single Electron Transistor
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COULOMB BLOCKADE
Electron transfers on island : based on Coulomb interaction.
“ Island’s electrostatic potential increases with the addition of an electron and addition of further electrons becomes more difficult”
For electron to hop onto the island:
Its Energy =Charging energy, Ec =e^2 /2Cg
Provide ext. bias voltage…
Single Electron Transistor
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V-I Characteristics
At Vg = e/2C ,current rises
Additional voltage ‘e/C’ (Coulomb gap voltage), for further increase.
Periodic Id-Vg chara. (Coulomb oscillations)
Single Electron Transistor
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On Increasing Vg…..
Single electron tunnelling
Two electron tunneling Current rises..
Single Electron Transistor
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On Increasing Vg…..
Electron gets trapped..Current drops
Single Electron Transistor
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Both electrons trapped..Current=0
LOGIC IMPLEMENTATION
nMOS nSET
( ON when Vg=‘1’)
pMOS pSET
( ON when Vg=‘0’)
To realise pSET :
=>Use 2nd Gate electrode..!!
=> Apply reqd. voltage to shift I-V characteristics
Single Electron Transistor
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PROGRAMMABLE LOGIC
With the help of Non Volatile Memory (NVM)
function. (implemented using SETs)
NVM node is capacitively coupled to the ISLAND
SET I-V characteristics programmed via NVM.
i.e SET can dynamically change to pSET or nSET.
Single Electron Transistor
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ADVANTAGES OF PROGRAMMABLE SET LOGIC
High degree of programmability with low device count.
A single logic ckt can implement many logic
functions..!
Impossible with CMOS tech.
Single Electron Transistor
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Initial device structure of SET
SIMOX wafer. A type of
SOI.
Conductance oscillations as a function of the gatevoltage measured at 300 K at a drain voltage of 10 mV.
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Conductance oscillations as a
function of the gate voltage measured at
40 K and at adrain voltage of 10
mV.
Initial structure of the twin SETs before
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Supersensitive electrometry:-Supersensitive electrometry:-If the source-drain voltage to a single- electron transistor is slightly above its Coulomb blockade threshold, source-drain current through the device is extremely sensitive to the gate voltage.
Supersensitive electrometry:-Supersensitive electrometry:-If the source-drain voltage to a single- electron transistor is slightly above its Coulomb blockade threshold, source-drain current through the device is extremely sensitive to the gate voltage.
Microwave detection:-Microwave detection:-The videoresponse ("photoresponse") of single-electron systems to electromagnetic radiation with frequency f=Ec/h. Microwave has low frequency, and so low energy, so detection would not have been possible without SET.
Microwave detection:-Microwave detection:-The videoresponse ("photoresponse") of single-electron systems to electromagnetic radiation with frequency f=Ec/h. Microwave has low frequency, and so low energy, so detection would not have been possible without SET.
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LIMITATIONS OF SET
Susceptible to Back ground charge. High bit error rates. Room temperature operation. Fabrication. Low fanout (High o/p impedance).
Single Electron Transistor
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Conclusion
The future of SETs looks very bright. Instead of working with millions of electrons in today’s MOS tech., one can realize the limit of calculating with single electrons. No matter how good SET tech. might turn out to be, it is hard to imagine that it will replace MOS tech. completely. The biggest benefits seem to lie in the clever combination of both.
Moore’s Law will sustain......!!
Single Electron Transistor
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REFERENCES
1. H. Pothier, P. Lafarge, D. Esteve, C. Urbina, and M. H. Devoret, “Passing electrons one by one: Is a 8 accuracy achievable?,” IEEE Trans. Instrum. Meas., vol. 42, pp. 324–330, Apr. 1993.
2. Josh Clark, "How Quantum Suicide Works"
3. (http://science.howstuffworks.com/quantum-suicide.htm)
4. M.A. Kastner, Physics Today 46(1993) 24
5. R.H. Chen, A.N. Korotkov, K.K. Likharev: Single- Electron Transistor Logic, Appl. Phys.Lett., Vol. 68, No. 14, April 1996, pp. 1954 – 1956Single Electron Transistor
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