PMDXB950UPEL - Nexperia

PMDXB950UPEL20 V, dual P-channel Trench MOSFET28 June 2016 Product data sheet

1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.

2. Features and benefits• Low leakage current• Trench MOSFET technology• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm• Exposed drain pad for excellent thermal conduction• ElectroStatic Discharge (ESD) protection > 1 kV HBM• Drain-source on-state resistance RDSon = 1.02 Ω

3. Applications• Relay driver• High-speed line driver• High-side load switch• Switching circuits

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

Per transistor

VDS drain-source voltage - - -20 V

VGS gate-source voltage

Tj = 25 °C

-8 - 8 V

ID drain current VGS = -4.5 V; Tamb = 25 °C [1] - - -500 mA

Static characteristics (per transistor)

RDSon drain-source on-stateresistance

VGS = -4.5 V; ID = -500 mA; Tj = 25 °C - 1.02 1.4 Ω

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad fordrain 1 cm2.

© Nexperia B.V. 2017. All rights reserved

Nexperia PMDXB950UPEL20 V, dual P-channel Trench MOSFET

PMDXB950UPEL All information provided in this document is subject to legal disclaimers.

Product data sheet 28 June 2016 2 / 16

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 S1 source TR1

2 G1 gate TR1

3 D2 drain TR2

4 S2 source TR2

5 G2 gate TR2

6 D1 drain TR1

7 D1 drain TR1

8 D2 drain TR2

Transparent top view

1 67

8

2

3

5

4

DFN1010B-6 (SOT1216)

017aaa260

D1

S1

G1

D2

S2

G2

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PMDXB950UPEL DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin smalloutline package; no leads; 6 terminals

SOT1216

7. MarkingTable 4. Marking codesType number Marking code

PMDXB950UPEL B 111





MARKING CODE(EXAMPLE)

PIN 1 INDICATION MARK

YEAR DATE CODE

READING DIRECTION

READING EXAMPLE:

A 110

aaa-019766

MARK-FREE AREA

VENDOR CODE

Fig. 1.





8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

Per transistor

VDS drain-source voltage - -20 V

VGS gate-source voltage

Tj = 25 °C

-8 8 V

VGS = -4.5 V; Tamb = 25 °C [1] - -500 mAID drain current

VGS = -4.5 V; Tamb = 100 °C [1] - -300 mA

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -2 A

[2] - 265 mWTamb = 25 °C

[1] - 380 mW

Ptot total power dissipation

Tsp = 25 °C - 4025 mW

Per device

Tj junction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

IS source current Tamb = 25 °C [1] - -350 mA

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad fordrain 1 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.





Tj (°C)- 75 17512525 75- 25

017aaa123

40

80

120

Pder(%)

0

Fig. 2. Normalized total power dissipation as afunction of junction temperature

Tj (°C)- 75 17512525 75- 25

017aaa124

40

80

120

Ider(%)

0

Fig. 3. Normalized continuous drain current as afunction of junction temperature

aaa-006901

VDS (V)-10-1 -102-10-1

-1

-10-1

-10

ID(A)

-10-2

100 µs

1 ms

10 msDC; Tsp = 25 °C

DC; Tamb = 25 °C;drain mounting pad 1 cm2

Limit RDSon = VDS/ID tp = 10 µs

100 ms

IDM = single pulse

Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

Per transistor

[1] - 410 475 K/WRth(j-a) thermal resistancefrom junction toambient

in free air

[2] - 285 330 K/W





Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistancefrom junction to solderpoint

- 27 31 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

aaa-006902

tp (s)10-3 102 10310110-2 10-1

102

103

Zth(j-a)(K/W)

10

duty cycle = 1

0.75

0.50.33

0.25 0.2

0.10.05

0.020 0.01

FR4 PCB, standard footprint

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical valuesaaa-006903

tp (s)10-3 102 10310110-2 10-1

102

103

Zth(j-a)(K/W)

10

duty cycle = 1

0.75

0.50.33

0.25 0.2

0.10.05

0.020 0.01

FR4 PCB, mounting pad for drain 1 cm2

Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values





10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics (per transistor)

V(BR)DSS drain-sourcebreakdown voltage

ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V

VGSth gate-source thresholdvoltage

ID = -250 µA; VDS=VGS; Tj = 25 °C -0.45 -0.7 -0.95 V

VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA

VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA

IDSS drain leakage current

VDS = -5 V; VGS = 0 V; Tj = 25 °C - - -25 nA

VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA

VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA

VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA

VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA

VGS = 1.8 V; VDS = 0 V; Tj = 25 °C - - 50 nA

IGSS gate leakage current

VGS = -1.8 V; VDS = 0 V; Tj = 25 °C - - -50 nA

VGS = -4.5 V; ID = -500 mA; Tj = 25 °C - 1.02 1.4 Ω

VGS = -4.5 V; ID = -500 mA; Tj = 150 °C - 1.54 2.1 Ω

VGS = -2.5 V; ID = -200 mA; Tj = 25 °C - 1.27 2.2 Ω

VGS = -1.8 V; ID = -40 mA; Tj = 25 °C - 1.7 3.3 Ω

VGS = -1.5 V; ID = -10 mA; Tj = 25 °C - 2.3 5 Ω

RDSon drain-source on-stateresistance

VGS = -1.2 V; ID = -1 mA; Tj = 25 °C - 3.5 - Ω

gfs forwardtransconductance

VDS = -10 V; ID = -500 mA; Tj = 25 °C - 480 - mS

Dynamic characteristics (per transistor)

QG(tot) total gate charge - 1.19 2.1 nC

QGS gate-source charge - 0.17 - nC

QGD gate-drain charge

VDS = -10 V; ID = -450 mA;VGS = -4.5 V; Tj = 25 °C

- 0.1 - nC

Ciss input capacitance - 43 - pF

Coss output capacitance - 14 - pF

Crss reverse transfercapacitance

VDS = -10 V; f = 1 MHz; VGS = 0 V;Tj = 25 °C

- 8 - pF

td(on) turn-on delay time - 2.3 - ns

tr rise time - 5 - ns

td(off) turn-off delay time

VDS = -10 V; ID = -0.45 A; RL = 22 Ω;VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C

- 13.5 - ns





Symbol Parameter Conditions Min Typ Max Unit

tf fall time - 6 - ns

Source-drain diode (per transistor)

VSD source-drain voltage IS = -115 mA; VGS = 0 V; Tj = 25 °C - -0.7 -1.2 V

VDS (V)0 -4-3-1 -2

aaa-006904

-1.0

-0.5

-1.5

-2.0

ID(A)

0.0

VGS = -4.5 V

-3.5 V

-3 V

-2.5 V

-1.8 V

-1.2 V

Tj = 25 °C

Fig. 7. Output characteristics: drain current as afunction of drain-source voltage; typical values

aaa-006905

VGS (V)0.0 -1.5-1.0-0.5

-10-5

-10-4

-10-3

-10-2

ID(A)

-10-6

min typ max

Tj = 25 °C; VDS = -5 V

Fig. 8. Sub-threshold drain current as a function ofgate-source voltage

ID (V)0.0 -2.0-1.5-0.5 -1.0

aaa-006906

1.0

0.5

1.5

2.0

RDSon(Ω)

0.0

VGS = -4.5 V

-3.5 V

-3 V

-2.5 V-1.8 V -2.2 V

Tj = 25 °C

Fig. 9. Drain-source on-state resistance as a functionof drain current; typical values

VGS (V)0 -5-4-2 -3-1

aaa-006907

2

3

1

4

5RDSon

(Ω)

0

Tj = 150 °C

Tj = 25 °C

ID = -0.5 A

Fig. 10. Drain-source on-state resistance as a functionof gate-source voltage; typical values





VGS (V)0 -4-3-1 -2

aaa-006908

-0.50

-0.25

-0.75

-1.00

ID(A)

0.00

Tj = 150 °CTj = 25 °C

VDS > ID × RDSon

Fig. 11. Transfer characteristics: drain current as afunction of gate-source voltage; typical values

Tj (°C)-60 1801200 60

aaa-006909

1.00

0.75

1.25

1.50

a

0.50

Fig. 12. Normalized drain-source on-state resistanceas a function of junction temperature; typicalvalues

Tj (°C)-60 1801200 60

aaa-006910

-0.5

-1.0

-1.5

VGS(th)(V)

0.0

min

typ

max

ID = -0.25 mA; VDS = VGS

Fig. 13. Gate-source threshold voltage as a function ofjunction temperature

aaa-006911

VDS (V)-10-1 -102-10-1

10

102

C(pF)

1

Ciss

Coss

Crss

f = 1 MHz; VGS = 0 V

Fig. 14. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues





aaa-016469

QG (nC)0 0.60.40.2

-2

-3

-1

-4

-5VGS(V)

0

ID = -0.5 A; VDS = -10 V; Tamb = 25 °C

Fig. 15. Gate-source voltage as a function of gatecharge; typical values

017aaa137

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 16. MOSFET transistor: Gate charge waveformdefinitions

VSD (V)0.0 -2.0-1.5-0.5 -1.0

aaa-006913

-1.0

-0.5

-1.5

-2.0

IS(A)

0.0

Tj = 150 °C Tj = 25 °C

VGS = 0 V

Fig. 17. Source current as a function of source-drain voltage; typical values

11. Test information

t1t2

P

t006aaa812

duty cycle δ =

t1

t2

Fig. 18. Duty cycle definition





12. Package outline

ReferencesOutlineversion

Europeanprojection Issue date

IEC JEDEC JEITA

SOT1216

sot1216_po

13-03-0513-03-06

Unit

mmminnommax

1.05 0.320.1550.125

0.205

A

Dimensions (mm are the original dimensions)

Note1. Dimension A is including plating thickness.

DFN1010B-6: plastic thermal enhanced ultra thin small outline package; no leads;6 terminals; body: 1.1 x 1.0 x 0.37 mm SOT1216

A1 b

0.15

D D1 e e1 L

0.400.370.34

0.04 1.151.10

0.400.230.18

scale

0 1 mm

0.95

1.05

E E1

0.22

0.300.2750.350.35 1.00 0.25

b (6x)

e epin 1index area

visible depend uponused manufacturingtechnology (6x)

D

L (6x)

D1 (2x)

E

A1

A

E1 (2x)

1 32

56 4

e1 e1

Fig. 19. Package outline DFN1010B-6 (SOT1216)





13. Soldering

SOT1216Footprint information for reflow soldering of DFN1010B-6 package

sot1216_fr

solder land

solder resist

solder land plus solder paste

occupied area

Dimensions in mm

Issue date 13-03-0614-07-28

0.3 (6x)

1.10.6

0.250.35

0.35

0.51.21.3

0.25

1

1.35

0.35

0.15 0.150.2 (6x)

0.35

0.9

Fig. 20. Reflow soldering footprint for DFN1010B-6 (SOT1216)





14. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

PMDXB950UPEL v.1 20160628 Product data sheet - -





15. Legal information

15.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

15.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

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Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

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In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,customer (a) shall use the product without Nexperia’s warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyondNexperia’s specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies Nexperia for anyliability, damages or failed product claims resulting from customer design anduse of the product for automotive applications beyond Nexperia’sstandard warranty and Nexperia’s product specifications.

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16. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................49 Thermal characteristics .........................................510 Characteristics .......................................................711 Test information ................................................... 1012 Package outline ................................................... 1113 Soldering .............................................................. 1214 Revision history ...................................................1315 Legal information .................................................1415.1 Data sheet status ............................................... 1415.2 Definitions ...........................................................1415.3 Disclaimers .........................................................1415.4 Trademarks ........................................................ 15

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 28 June 2016

PMDXB950UPEL - Nexperia

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