PMDPB30XN - Nexperia · 2017. 5. 4. · PMDPB30XN dNH2NOueQ6b64[Vw6(llOuDntSONSNOcNo Nexperia...

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PMDPB30XN 20 V, dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive Power management in battery-driven portables Hard disc and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V DS drain-source voltage - - 20 V V GS gate-source voltage T j = 25 °C -12 - 12 V I D drain current V GS = 4.5 V; T amb = 25 °C; t ≤ 5 s [1] - - 5.3 A Static characteristics (per transistor) R DSon drain-source on-state resistance V GS = 4.5 V; I D = 3 A; T j = 25 °C - 32 40 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 .

Transcript of PMDPB30XN - Nexperia · 2017. 5. 4. · PMDPB30XN dNH2NOueQ6b64[Vw6(llOuDntSONSNOcNo Nexperia...

  • PMDPB30XN20 V, dual N-channel Trench MOSFET6 July 2012 Product data sheet

    1. Product profile

    1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadlessultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.

    1.2 Features and benefits• Very fast switching• Trench MOSFET technology• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm• Exposed drain pad for excellent thermal conduction

    1.3 Applications• Charging switch for portable devices• DC-to-DC converters• Small brushless DC motor drive• Power management in battery-driven portables• Hard disc and computing power management

    1.4 Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

    Per transistor

    VDS drain-source voltage - - 20 V

    VGS gate-source voltage

    Tj = 25 °C

    -12 - 12 V

    ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - 5.3 A

    Static characteristics (per transistor)

    RDSon drain-source on-stateresistance

    VGS = 4.5 V; ID = 3 A; Tj = 25 °C - 32 40 mΩ

    [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad fordrain 6 cm2.

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMDPB30XN20 V, dual N-channel Trench MOSFET

    PMDPB30XN All information provided in this document is subject to legal disclaimers.

    Product data sheet 6 July 2012 2 / 13

    2. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

    1 S1 source TR1

    2 G1 gate TR1

    3 D2 drain TR2

    4 S2 source TR2

    5 G2 gate TR2

    6 D1 drain TR1

    7 D1 drain TR1

    8 D2 drain TR2

    Transparent top view

    6

    7 8

    5 4

    1 2 3

    DFN2020-6 (SOT1118)

    S1

    D1

    G1 S2017aaa254

    D2

    G2

    3. Ordering informationTable 3. Ordering information

    PackageType number

    Name Description Version

    PMDPB30XN DFN2020-6 plastic thermal enhanced ultra thin small outline package; noleads; 6 terminals

    SOT1118

    4. MarkingTable 4. Marking codesType number Marking code

    PMDPB30XN 1V

    5. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

    Per transistor

    VDS drain-source voltage - 20 V

    VGS gate-source voltage

    Tj = 25 °C

    -12 12 V

    VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 5.3 A

    VGS = 4.5 V; Tamb = 25 °C [1] - 4 A

    ID drain current

    VGS = 4.5 V; Tamb = 100 °C [1] - 2.6 A

    IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 12 A

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMDPB30XN20 V, dual N-channel Trench MOSFET

    PMDPB30XN All information provided in this document is subject to legal disclaimers.

    Product data sheet 6 July 2012 3 / 13

    Symbol Parameter Conditions Min Max Unit

    [2] - 490 mWTamb = 25 °C

    [1] - 1170 mW

    Ptot total power dissipation

    Tsp = 25 °C - 8330 mW

    Source-drain diode

    IS source current Tamb = 25 °C [1] - 1.2 A

    Per device

    Tj junction temperature -55 150 °C

    Tamb ambient temperature -55 150 °C

    Tstg storage temperature -65 150 °C

    [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad fordrain 6 cm2.

    [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

    Tj (°C)- 75 17512525 75- 25

    017aaa123

    40

    80

    120

    Pder(%)

    0

    Fig. 1. Normalized total power dissipation as afunction of junction temperature

    Tj (°C)- 75 17512525 75- 25

    017aaa124

    40

    80

    120

    Ider(%)

    0

    Fig. 2. Normalized continuous drain current as afunction of junction temperature

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMDPB30XN20 V, dual N-channel Trench MOSFET

    PMDPB30XN All information provided in this document is subject to legal disclaimers.

    Product data sheet 6 July 2012 4 / 13

    017aaa637

    1

    10-1

    10

    102

    ID(A)

    10-2

    VDS (V)10-1 102101

    tp = 10 µs

    tp = 100 µs

    tp = 10 ms

    tp = 100 ms

    DC; Tsp = 25 °C

    DC; Tamb = 25 °C;drain mounting pad 6 cm2

    Limit RDSon = VDS/ID

    IDM = single pulse

    Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage

    6. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

    Per transistor

    [1] - 223 256 K/Win free air

    [2] - 93 107 K/W

    Rth(j-a) thermal resistancefrom junction toambient

    in free air; t ≤ 5 s [2] - 55 63 K/W

    Rth(j-sp) thermal resistancefrom junction to solderpoint

    - 10 15 K/W

    [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMDPB30XN20 V, dual N-channel Trench MOSFET

    PMDPB30XN All information provided in this document is subject to legal disclaimers.

    Product data sheet 6 July 2012 5 / 13

    017aaa398

    10

    1

    102

    103

    Zth(j-a)(K/W)

    10-110-5 1010-210-4 10210-1

    tp (s)10-3 1031

    duty cycle = 1

    0.750.5

    0.33 0.250.2

    0.10.05

    0.02

    0.01

    0

    FR4 PCB, standard footprint

    Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values017aaa399

    10

    1

    102

    103

    Zth(j-a)(K/W)

    10-110-5 1010-210-4 10210-1

    tp (s)10-3 1031

    duty cycle = 1

    0.750.5

    0.330.25

    0.20.1

    0.050.02

    0.010

    FR4 PCB, mounting pad for drain 6 cm2

    Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

    7. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

    Static characteristics (per transistor)

    V(BR)DSS drain-sourcebreakdown voltage

    ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V

    VGSth gate-source thresholdvoltage

    ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.65 0.9 V

    VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µAIDSS drain leakage current

    VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 11 µA

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMDPB30XN20 V, dual N-channel Trench MOSFET

    PMDPB30XN All information provided in this document is subject to legal disclaimers.

    Product data sheet 6 July 2012 6 / 13

    Symbol Parameter Conditions Min Typ Max Unit

    VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current

    VGS = -12 V; VDS = 0 V; Tj = 25 °C - - 100 nA

    VGS = 4.5 V; ID = 3 A; Tj = 25 °C - 32 40 mΩ

    VGS = 4.5 V; ID = 3 A; Tj = 150 °C - 55 69 mΩ

    VGS = 2.5 V; ID = 1.4 A; Tj = 25 °C - 40 53 mΩ

    RDSon drain-source on-stateresistance

    VGS = 1.8 V; ID = 1.4 A; Tj = 25 °C - 60 75 mΩ

    gfs forwardtransconductance

    VDS = 5 V; ID = 3 A; Tj = 25 °C - 12 - S

    Dynamic characteristics (per transistor)

    QG(tot) total gate charge - 14.4 21.7 nC

    QGS gate-source charge - 1.1 - nC

    QGD gate-drain charge

    VDS = 10 V; ID = 3 A; VGS = 4.5 V;Tj = 25 °C

    - 1.5 - nC

    Ciss input capacitance - 660 - pF

    Coss output capacitance - 87 - pF

    Crss reverse transfercapacitance

    VDS = 10 V; f = 1 MHz; VGS = 0 V;Tj = 25 °C

    - 74 - pF

    td(on) turn-on delay time - 4 - ns

    tr rise time - 15 - ns

    td(off) turn-off delay time - 40 - ns

    tf fall time

    VDS = 10 V; ID = 3 A; VGS = 4.5 V;RG(ext) = 6 Ω; Tj = 25 °C

    - 16 - ns

    Source-drain diode (per transistor)

    VSD source-drain voltage IS = 1.2 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V

    VDS (V)0 642

    017aaa638

    5

    10

    15

    ID(A)

    0

    4.5 V3.0 V2.5 V

    2.2 V

    VGS = 1.5 V

    2.0 V

    1.8 V

    Tj = 25 °C

    Fig. 6. Output characteristics: drain current as afunction of drain-source voltage; typical values

    017aaa639

    VGS (V)0 1.51.00.5

    10-4

    10-5

    10-3

    ID(A)

    10-6

    min typ max

    Tj = 25 °C; VDS = 5 V

    Fig. 7. Sub-threshold drain current as a function ofgate-source voltage

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    Nexperia PMDPB30XN20 V, dual N-channel Trench MOSFET

    PMDPB30XN All information provided in this document is subject to legal disclaimers.

    Product data sheet 6 July 2012 7 / 13

    ID (A)0 1284

    017aaa640

    40

    80

    120

    RDSon(mΩ)

    0

    1.8 V 2 V

    2.5 V

    VGS = 4.5 V

    3 V

    Tj = 25 °C

    Fig. 8. Drain-source on-state resistance as a functionof drain current; typical values

    VGS (V)0 1284

    017aaa641

    40

    80

    120

    RDSon(mΩ)

    0

    Tj = 150 °C

    Tj = 25 °C

    ID = 2 A

    Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values

    VGS (V)0 321

    017aaa642

    4

    8

    12

    ID(A)

    0

    Tj = 150 °C Tj = 25 °C

    VDS > ID × RDSon

    Fig. 10. Transfer characteristics: drain current as afunction of gate-source voltage; typical values

    Tj (°C)-60 1801200 60

    017aaa643

    1.0

    1.4

    1.8

    a

    0.6

    Fig. 11. Normalized drain-source on-state resistanceas a function of junction temperature; typicalvalues

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMDPB30XN20 V, dual N-channel Trench MOSFET

    PMDPB30XN All information provided in this document is subject to legal disclaimers.

    Product data sheet 6 July 2012 8 / 13

    Tj (°C)-60 1801200 60

    017aaa644

    0.5

    1.0

    1.5

    VGS(th)(V)

    0

    max

    typ

    min

    ID = 0.25 mA; VDS = VGS

    Fig. 12. Gate-source threshold voltage as a function ofjunction temperature

    VDS (V)10-1 102101

    017aaa645

    102

    10

    103

    C(pF)

    1

    Ciss

    CossCrss

    f = 1 MHz; VGS = 0 V

    Fig. 13. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues

    QG (nC)0 862 4

    017aaa646

    2

    3

    1

    4

    5VGS(V)

    0

    ID = 3 A; VDS = 10 V; Tamb = 25 °C

    Fig. 14. Gate-source voltage as a function of gatecharge; typical values

    017aaa137

    VGS

    VGS(th)

    QGS1 QGS2

    QGD

    VDS

    QG(tot)

    ID

    QGS

    VGS(pl)

    Fig. 15. Gate charge waveform definitions

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    Nexperia PMDPB30XN20 V, dual N-channel Trench MOSFET

    PMDPB30XN All information provided in this document is subject to legal disclaimers.

    Product data sheet 6 July 2012 9 / 13

    VSD (V)0 1.20.80.4

    017aaa647

    4

    8

    12

    IS(A)

    0

    Tj = 150 °C Tj = 25 °C

    VGS = 0 V

    Fig. 16. Source current as a function of source-drain voltage; typical values

    8. Test information

    t1t2

    P

    t006aaa812

    duty cycle δ =

    t1

    t2

    Fig. 17. Duty cycle definition

    9. Package outline

    10-05-31Dimensions in mm

    0.04max

    0.65max

    0.770.57(2×)0.540.44(2×)

    2.11.9

    2.11.9

    1.10.9

    0.30.2

    0.65(4×)

    0.350.25(6×)

    43

    1 6

    Fig. 18. DFN2020-6 (SOT1118)

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    Nexperia PMDPB30XN20 V, dual N-channel Trench MOSFET

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    Product data sheet 6 July 2012 10 / 13

    10. Soldering

    sot1118_fr

    Dimensions in mm

    solder paste

    solder resist

    occupied area

    solder lands

    0.49 0.49

    0.650.65

    0.875

    0.875

    2.25

    0.35(6×)

    0.3(6×)

    0.4(6×)

    0.45(6×)

    0.72(2×)0.82(2×)

    1.05(2×)

    1.15(2×)

    2.1

    Fig. 19. Reflow soldering footprint for SOT1118 (HUSON6)

    11. Revision historyTable 8. Revision historyDocument ID Release date Document status Change notice Supersedes

    PMDPB30XN v.1 20120706 Product data sheet - -

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    Nexperia PMDPB30XN20 V, dual N-channel Trench MOSFET

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    Product data sheet 6 July 2012 11 / 13

    12. Legal information

    12.1 Data sheet statusDocumentstatus [1][2]

    Productstatus [3]

    Definition

    Objective[short] datasheet

    Development This document contains data fromthe objective specification for productdevelopment.

    Preliminary[short] datasheet

    Qualification This document contains data from thepreliminary specification.

    Product[short] datasheet

    Production This document contains the productspecification.

    [1] Please consult the most recently issued document before initiating orcompleting a design.

    [2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

    changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

    12.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

    Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

    Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

    Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.

    12.3 DisclaimersLimited warranty and liability — Information in this document is believedto be accurate and reliable. However, Nexperia does not giveany representations or warranties, expressed or implied, as to the accuracyor completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an informationsource outside of Nexperia.

    In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

    Notwithstanding any damages that customer might incur for any reasonwhatsoever, Nexperia’s aggregate and cumulative liability towardscustomer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

    Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.

    Suitability for use — Nexperia products are not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s ownrisk.

    Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

    Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

    Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

    Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.

    Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

    Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.

    No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or the

    http://www.nexperia.com/profile/terms

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    Nexperia PMDPB30XN20 V, dual N-channel Trench MOSFET

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    Product data sheet 6 July 2012 12 / 13

    grant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.

    Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from competent authorities.

    Non-automotive qualified products — Unless this data sheet expresslystates that this specific Nexperia product is automotive qualified,the product is not suitable for automotive use. It is neither qualified nortested in accordance with automotive testing or application requirements.Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

    In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,customer (a) shall use the product without Nexperia’s warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyondNexperia’s specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies Nexperia for anyliability, damages or failed product claims resulting from customer design anduse of the product for automotive applications beyond Nexperia’sstandard warranty and Nexperia’s product specifications.

    Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

    12.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PMDPB30XN20 V, dual N-channel Trench MOSFET

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    Product data sheet 6 July 2012 13 / 13

    13. Contents1 Product profile ....................................................... 11.1 General description .............................................. 11.2 Features and benefits ...........................................11.3 Applications .......................................................... 11.4 Quick reference data ............................................ 12 Pinning information ...............................................23 Ordering information .............................................24 Marking ................................................................... 25 Limiting values .......................................................26 Thermal characteristics .........................................47 Characteristics .......................................................58 Test information ..................................................... 99 Package outline ..................................................... 910 Soldering .............................................................. 1011 Revision history ...................................................1012 Legal information .................................................1112.1 Data sheet status ............................................... 1112.2 Definitions ...........................................................1112.3 Disclaimers .........................................................1112.4 Trademarks ........................................................ 12

    © Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 06 July 2012

    1. Product profile2. Pinning information3. Ordering information4. Marking5. Limiting values6. Thermal characteristics7. Characteristics8. Test information9. Package outline10. Soldering11. Revision history12. Legal information