PMV100ENEA - Nexperia · 2017. 3. 20. · PMV100ENEA AoSoCnw((25(RccCnIetECoEoCroh Nexperia...

PMV100ENEA30 V, N-channel Trench MOSFET17 March 2016 Product data sheet

1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.

2. Features and benefits• Logic level compatible• Very fast switching• Trench MOSFET technology• ElectroStatic Discharge (ESD) protection > 2 kV HBM• AEC-Q101 qualified

3. Applications• Relay driver• High-speed line driver• Low-side loadswitch• Switching circuits

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage - - 30 V

VGS gate-source voltage

Tj = 25 °C

-20 - 20 V

ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 3 A

Static characteristics

RDSon drain-source on-stateresistance

VGS = 10 V; ID = 3 A; Tj = 25 °C - 54 72 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting padfor drain 6 cm2.

© Nexperia B.V. 2017. All rights reserved

Nexperia PMV100ENEA30 V, N-channel Trench MOSFET

PMV100ENEA All information provided in this document is subject to legal disclaimers.

Product data sheet 17 March 2016 2 / 16

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain

1 2

3

TO-236AB (SOT23)

017aaa255

G

D

S

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PMV100ENEA TO-236AB plastic surface-mounted package; 3 leads SOT23

7. MarkingTable 4. Marking codesType number Marking code

[1]

PMV100ENEA DW%

[1] % = placeholder for manufacturing site code





8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 30 V

VGS gate-source voltage

Tj = 25 °C

-20 20 V

ID drain current VGS = 10 V; Tamb = 25 °C [1] - 3 A

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 12 A

EDS(AL)S non-repetitive drain-sourceavalanche energy

Tj(init) = 25 °C; ID = 1.3 A; DUT inavalanche (unclamped)

- 6 mJ

[2] - 460 mWTamb = 25 °C

[1] - 1.1 W

Ptot total power dissipation

Tsp = 25 °C - 4.5 W

Tj junction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

IS source current Tamb = 25 °C [1] - 1 A

ESD maximum rating

VESD electrostatic discharge voltage HBM [3] - 2000 V

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting padfor drain 6 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.

[3] Measured between all pins.





Tj (°C)- 75 17512525 75- 25

017aaa123

40

80

120

Pder(%)

0

Fig. 1. Normalized total power dissipation as afunction of junction temperature

Tj (°C)- 75 17512525 75- 25

017aaa124

40

80

120

Ider(%)

0

Fig. 2. Normalized continuous drain current as afunction of junction temperature

aaa-022256

1

10-1

10

102

ID(A)

10-2

VDS (V)10-1 102101

Limit RDSon = VDS/ID

DC; Tsp = 25 °C

DC; Tamb = 25 °C;drain mounting pad 6 cm2

tp = 10 µs

1 ms

10 ms

100 ms

100 µs

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage





9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

[1] - 227 270 K/WRth(j-a) thermal resistancefrom junction toambient

in free air

[2] - 99 115 K/W

Rth(j-sp) thermal resistancefrom junction to solderpoint

- 20 28 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.

aaa-022257

tp (s)10-3 102 10310110-2 10-1

102

10

103

Zth(j-a)(K/W)

1

duty cycle = 1

0

0.020.01

0.050.10

0.200.25

0.330.50

0.75

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical valuesaaa-022258

tp (s)10-3 102 10310110-2 10-1

102

10

103

Zth(j-a)(K/W)

1

duty cycle = 1

0

0.020.01

0.10

0.500.75

0.05

0.250.200.33

FR4 PCB, mounting pad for drain 6 cm2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values





10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-sourcebreakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V

VGSth gate-source thresholdvoltage

ID = 250 µA; VDS=VGS; Tj = 25 °C 1 1.5 2.5 V

IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA

VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA

VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 2 µA

IGSS gate leakage current

VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -2 µA

VGS = 10 V; ID = 3 A; Tj = 25 °C - 54 72 mΩ

VGS = 10 V; ID = 3 A; Tj = 150 °C - 88 118 mΩ

RDSon drain-source on-stateresistance

VGS = 4.5 V; ID = 2.6 A; Tj = 25 °C - 70 100 mΩ

gfs forwardtransconductance

VDS = 10 V; ID = 3 A; Tj = 25 °C - 9 - S

RG gate resistance f = 1 MHz - 11.5 - Ω

Dynamic characteristics

QG(tot) total gate charge - 3.6 5.5 nC

QGS gate-source charge - 0.4 - nC

QGD gate-drain charge

VDS = 15 V; ID = 3 A; VGS = 10 V;Tj = 25 °C

- 0.7 - nC

Ciss input capacitance - 160 - pF

Coss output capacitance - 33 - pF

Crss reverse transfercapacitance

VDS = 15 V; f = 1 MHz; VGS = 0 V;Tj = 25 °C

- 26 - pF

td(on) turn-on delay time - 6 - ns

tr rise time - 6 - ns

td(off) turn-off delay time - 11 - ns

tf fall time

VDS = 15 V; ID = 3 A; VGS = 10 V;RG(ext) = 6 Ω; Tj = 25 °C

- 4 - ns

Source-drain diode

VSD source-drain voltage IS = 1 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V





VDS (V)0 542 31

aaa-022259

4

8

12

ID(A)

0

2.5 V

VGS = 10 V

4.5 V

3.0 V

3.5 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as afunction of drain-source voltage; typical values

aaa-022260

VGS (V)0 321

10-4

10-5

10-3

ID(A)

10-6

min typ max

Tj = 25 °C; VDS = 5 V

Fig. 7. Sub-threshold drain current as a function ofgate-source voltage

ID (A)0 1284

aaa-022261

100

200

300

RDSon(mΩ)

0

VGS = 10 V

4.5 V

3.2 V3.0 V2.8 V 3.3 V

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a functionof drain current; typical values

VGS (V)0 1084 62

aaa-022262

100

100

300

400

RDSon(mΩ)

0

Tj = 150 °C

Tj = 25 °C

ID = 2.8 A

Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values





VGS (V)0 542 31

aaa-022263

4

8

12

ID(A)

0

Tj = 150 °C

Tj = 25 °C

VDS > ID × RDSon

Fig. 10. Transfer characteristics: drain current as afunction of gate-source voltage; typical values

Tj (°C)-60 1801200 60

aaa-022264

1.0

0.5

1.5

2.0

a

0

Fig. 11. Normalized drain-source on-state resistanceas a function of junction temperature; typicalvalues

Tj (°C)-60 1801200 60

aaa-022265

1

2

3

VGS(th)(V)

0

min

typ

max

ID = 0.25 mA; VDS = VGS

Fig. 12. Gate-source threshold voltage as a function ofjunction temperature

VDS (V)10-1 102101

aaa-022266

102

10

103

C(pF)

1

Ciss

CossCrss

f = 1 MHz; VGS = 0 V

Fig. 13. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues





QG (nC)0 431 2

aaa-022267

4

6

2

8

10VGS(V)

0

ID = 3 A; VDS = 15 V; Tamb = 25 °C

Fig. 14. Gate-source voltage as a function of gatecharge; typical values

003aaa508

VGS

VGS(th)

QGS1

QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 15. MOSFET transistor: Gate charge waveformdefinitions

aaa-022268

VSD (V)0 1.20.80.4

2

1

3

4

IS(A)

0

Tj = 150 °C

Tj = 25 °C

VGS = 0 V

Fig. 16. Source current as a function of source-drain voltage; typical values





11. Test information

t1t2

P

t006aaa812

duty cycle δ =

t1

t2

Fig. 17. Duty cycle definition

11.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.





12. Package outline

ReferencesOutlineversion

Europeanprojection Issue dateIEC JEDEC JEITA

SOT23 TO-236AB

sot023_po

14-06-1914-09-22

Plastic surface-mounted package; 3 leads SOT23

bp

D

A

A1

Lp

Q

HE

E

0 1 2 mm

scale

c1 2

3

B

w B

e

e1

v A

A X

Unit

mmmaxnommin

1.1 0.1 0.15 3.0 1.40.2

A

Dimensions (mm are the original dimensions)

A1 bp

0.48

c D E e e1

0.95

HE Lp Q v w

0.11.92.1 0.150.9 0.09 2.8 1.20.38

2.5 0.45

0.45

0.55

detail X

Fig. 18. Package outline TO-236AB (SOT23)





13. Soldering

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5(3×)0.6(3×)

0.6(3×)

0.7(3×)

3

1

3.3

2.9

1.7

1.9

2

Dimensions in mm

Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4(2×)

1.2(2×)

2.2

2.6

Dimensions in mm

Fig. 20. Wave soldering footprint for TO-236AB (SOT23)





14. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

PMV100ENEA v.1 20160317 Product data sheet - -





15. Legal information

15.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

15.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

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In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

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Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.

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Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

15.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.





16. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................39 Thermal characteristics .........................................510 Characteristics .......................................................611 Test information ................................................... 1011.1 Quality information ............................................. 1012 Package outline ................................................... 1113 Soldering .............................................................. 1214 Revision history ...................................................1315 Legal information .................................................1415.1 Data sheet status ............................................... 1415.2 Definitions ...........................................................1415.3 Disclaimers .........................................................1415.4 Trademarks ........................................................ 15

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 17 March 2016

1. General description2. Features and benefits3. Applications4. Quick reference data5. Pinning information6. Ordering information7. Marking8. Limiting values9. Thermal characteristics10. Characteristics11. Test information12. Package outline13. Soldering14. Revision history15. Legal information

PMV100ENEA - Nexperia · 2017. 3. 20. · PMV100ENEA AoSoCnw((25(RccCnIetECoEoCroh Nexperia...

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