Pixel detector development: sensor
description
Transcript of Pixel detector development: sensor
Pixel detector development: sensor
Epitaxial wafer with sensor: first design
5 readout chip sensor
4 readout chip sensor
pixel Pad for bump bonding
Pixel detector development: readout electronicsToPix specifications: Custom made pixel readout chip developed using 130 nm CMOS technology
Pixel readout size 100mm x 100mm
Chip active area 11.4 mm x 11.6 mm
dE/dx measurement ToT, 12 bits dynamic range
Noise <0.032 fC (200 e-)
Clock frequency 155.52 MHz
Time resolution 6.4 ns (1.85 ns rms)
Power consumption <<500 mW/cm2
Max. event rate @2·107pbar-p ann/s:
~ 12·106 hits/(cm2·s)
Pixel detector development: Front-end electronics
Prototype with 320 readout cells
ToPix_v2: Custom made pixel readout chip
ANALOG
DIG
ITA
L
latchenable
mask5
Ifb
Cint
preamp comp
baselinerestorer
DAC
12 127
12
mask
le_r
egte
_reg
cfg_
reg
controllogic
ToT busCLK:
INPUT
Pixel readout cell,100 mm x 100 mm size
Electrical scheme of the readout cell
Characterization of front-end and sensor prototypes
ToPix: Custom made pixel readout chip
Channel to channel ToT dispersion:
10 %
Epi-SensorsTests with a 90Sr source
Measurements with epitaxial pixel prototypes connected to ToPix front-end chip with wire bonding
Epitaxial silicon pixel size: 125mm x 325mm, 50 mm thick