PHPT60406NY - Nexperia · 2017. 5. 22. · PHPT60406NY AoSoCnw(_(T2(RccCnIetECoEoCroh Nexperia...

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PHPT60406NY 40 V, 6 A NPN high power bipolar transistor 8 December 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY 2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified. 3. Applications Power management Load switch Linear mode voltage regulator Backlighting applications Relay replacement Motor drive 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V CEO collector-emitter voltage open base - - 40 V I C collector current - - 6 A I CM peak collector current single pulse; t p ≤ 1 ms - - 14 A R CEsat collector-emitter saturation resistance I C = 6 A; I B = 600 mA; pulsed; t p ≤ 300 µs; δ ≤ 0.02; T amb = 25 °C - 45 60

Transcript of PHPT60406NY - Nexperia · 2017. 5. 22. · PHPT60406NY AoSoCnw(_(T2(RccCnIetECoEoCroh Nexperia...

  • PHPT60406NY40 V, 6 A NPN high power bipolar transistor8 December 2014 Product data sheet

    1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.

    PNP complement: PHPT60406PY

    2. Features and benefits• High thermal power dissipation capability• High temperature applications up to 175 °C• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK• High energy efficiency due to less heat generation• AEC-Q101 qualified.

    3. Applications• Power management• Load switch• Linear mode voltage regulator• Backlighting applications• Relay replacement• Motor drive

    4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

    VCEO collector-emittervoltage

    open base - - 40 V

    IC collector current - - 6 A

    ICM peak collector current single pulse; tp ≤ 1 ms - - 14 A

    RCEsat collector-emittersaturation resistance

    IC = 6 A; IB = 600 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

    - 45 60 mΩ

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 2 / 16

    5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

    1 E emitter

    2 E emitter

    3 E emitter

    4 B base

    mb C collector

    mb

    1 2 3 4

    LFPAK56; Power-SO8 (SOT669)

    sym123

    C

    E

    B

    6. Ordering informationTable 3. Ordering information

    PackageType number

    Name Description Version

    PHPT60406NY LFPAK56;Power-SO8

    Plastic single-ended surface-mounted package (LFPAK56;Power-SO8); 4 leads

    SOT669

    7. MarkingTable 4. Marking codesType number Marking code

    PHPT60406NY 0406NAB

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 3 / 16

    8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

    VCBO collector-base voltage open emitter - 40 V

    VCEO collector-emitter voltage open base - 40 V

    VEBO emitter-base voltage open collector - 7 V

    IC collector current - 6 A

    ICM peak collector current single pulse; tp ≤ 1 ms - 14 A

    IB base current - 800 mA

    IBM peak base current single pulse; tp ≤ 1 ms - 1.4 A

    [1] - 1.35 W

    [2] - 3.25 W

    [3] - 5 W

    Ptot total power dissipation Tamb ≤ 25 °C

    [4] - 25 W

    Tj junction temperature - 175 °C

    Tamb ambient temperature -55 175 °C

    Tstg storage temperature -65 175 °C

    [1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standardfootprint.

    [2] Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm2.[3] Device mounted on a ceramic PCB; Al2O3, standard footprint.[4] Power dissipation from junction to mounting base.

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 4 / 16

    Tamb (°C)-75 22512525

    aaa-014785

    2

    4

    6

    Ptot(W)

    0

    (1)

    (2)

    (3)

    (1) Ceramic PCB, Al2O3, standard footprint

    (2) FR4 PCB, mounting pad for collector 6 cm2

    (3) FR4 PCB, standard footprint

    Fig. 1. Power derating curves

    9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

    [1] - - 111 K/W

    [2] - - 46 K/W

    Rth(j-a) thermal resistancefrom junction toambient

    in free air

    [3] - - 30 K/W

    Rth(j-mb) thermal resistancefrom junction tomounting base

    - - 6 K/W

    [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.[3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 5 / 16

    duty cycle = 1

    0

    0.010.02

    0.750.5

    0.330.2

    0.10.05

    10

    1

    102

    103

    Zth(j-a)(K/W)

    10-110-5 1010-210-4 10210-1

    tp (s)10-3 1031

    aaa-014786

    FR4 PCB, standard footprint

    Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical valuesaaa-014787

    10-5 1010-210-4 10210-1tp (s)

    10-3 1031

    10

    1

    102

    Zth(j-a)(K/W)

    10-1

    duty cycle = 1

    0.05

    0.1

    0.02

    0.01 0

    0.20.33

    0.50.75

    FR4 PCB, mounting pad for collector 6 cm2

    Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 6 / 16

    10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

    VCB = 32 V; IE = 0 A; Tamb = 25 °C - - 100 nAICBO collector-base cut-offcurrent VCB = 32 V; IE = 0 A; Tj = 150 °C - - 50 µA

    ICES collector-emitter cut-offcurrent

    VCE = 32 V; VBE = 0 V; Tamb = 25 °C - - 100 nA

    IEBO emitter-base cut-offcurrent

    VEB = 7 V; IC = 0 A; Tamb = 25 °C - - 100 nA

    VCE = 2 V; IC = 500 mA; Tamb = 25 °C 230 350 -

    VCE = 2 V; IC = 1 A; tp ≤ 300 µs;δ ≤ 0.02; Tamb = 25 °C

    220 335 -

    VCE = 2 V; IC = 3 A; tp ≤ 300 µs;δ ≤ 0.02; Tamb = 25 °C

    150 235 -

    hFE DC current gain

    VCE = 2 V; IC = 6 A; tp ≤ 300 µs;δ ≤ 0.02; Tamb = 25 °C; pulsed

    60 95 -

    IC = 1 A; IB = 50 mA; tp ≤ 300 µs;δ ≤ 0.02; Tamb = 25 °C; pulsed

    - 45 70 mV

    IC = 3 A; IB = 300 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

    - 110 170 mV

    VCEsat collector-emittersaturation voltage

    IC = 6 A; IB = 300 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

    - 240 380 mV

    RCEsat collector-emittersaturation resistance

    IC = 6 A; IB = 600 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

    - 45 60 mΩ

    IC = 1 A; IB = 50 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

    - 0.85 1 V

    IC = 3 A; IB = 300 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

    - 1 1.15 V

    VBEsat base-emitter saturationvoltage

    IC = 6 A; IB = 300 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

    - 1 1.2 V

    VBEon base-emitter turn-onvoltage

    VCE = 2 V; IC = 0.5 A; Tamb = 25 °C - 0.7 0.8 V

    td delay time - 10 - ns

    tr rise time - 95 - ns

    ton turn-on time - 105 - ns

    ts storage time - 455 - ns

    tf fall time - 120 - ns

    toff turn-off time

    VCC = 12.5 V; IC = 3 A; IBon = 0.15 A;IBoff = -0.15 A; Tamb = 25 °C

    - 575 - ns

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 7 / 16

    Symbol Parameter Conditions Min Typ Max Unit

    fT transition frequency VCE = 10 V; IC = 500 mA; f = 100 MHz;Tamb = 25 °C

    - 153 - MHz

    Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A;f = 1 MHz; Tamb = 25 °C

    - 41 - pF

    aaa-014888

    200

    400

    600

    hFE

    0

    IC (mA)10-1 1041031 10210

    (1)

    (2)

    (3)

    VCE = 2 V(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

    Fig. 4. DC current gain as a function of collectorcurrent; typical values

    VCE (V)0 542 31

    aaa-014889

    4

    2

    6

    8

    IC(A)

    0

    60

    80

    70

    5040

    3020

    15

    10

    IB = 5 mA

    Tamb = 25 °C

    Fig. 5. Collector current as a function of collector-emitter voltage; typical values

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 8 / 16

    aaa-014890

    0.6

    0.8

    0.4

    1.0

    1.2VBE(V)

    0.2

    IC (mA)10-1 1041031 10210

    (1)

    (2)

    (3)

    VCE = 2 V(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

    Fig. 6. Base-emitter voltage as a function of collectorcurrent; typical values

    aaa-014891

    0.6

    0.8

    0.4

    1.0

    1.2VBEsat

    (V)

    0.2

    IC (mA)10-1 1041031 10210

    (2)

    (3)

    (1)

    IC/IB = 20(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

    Fig. 7. Base-emitter saturation voltage as a function ofcollector current; typical values

    aaa-014892

    10-1

    10-2

    1

    VCEsat(V)

    10-3

    IC (mA)10-1 1041031 10210

    (1)

    (2)(3)

    IC/IB = 20(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

    Fig. 8. Collector-emitter saturation voltage as afunction of collector current; typical values

    aaa-014893

    10-1

    10-2

    1

    VCEsat(V)

    10-3

    IC (mA)10-1 1041031 10210

    (3)

    (4)

    (2)

    (1)

    Tamb = 25 °C(1) IC/IB = 100(2) IC/IB = 50(3) IC/IB = 20(4) IC/IB = 10

    Fig. 9. Collector-emitter saturation voltage as afunction of collector current; typical values

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 9 / 16

    aaa-014894

    IC (mA)10-1 1041031 10210

    10-1

    1

    10

    102

    RCEsat

    10-2

    (1)

    (2)

    (3)

    IC/IB = 20(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

    Fig. 10. Collector-emitter saturation resistance as afunction of collector current; typical values

    IC (mA)10-1 1041031 10210

    aaa-014895

    1

    10-1

    102

    10

    103

    RCEsat

    10-2

    (3)

    (1)

    (2)

    (4)

    Tamb = 25 °C(1) IC/IB = 100(2) IC/IB = 50(3) IC/IB = 20(4) IC/IB = 10

    Fig. 11. Collector-emitter saturation resistance as afunction of collector current; typical values

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 10 / 16

    11. Test information

    006aaa003

    IBon (100 %)

    IB

    input pulse(idealized waveform)

    IBoff

    90 %

    10 %

    IC (100 %)

    IC

    tdton

    90 %

    10 %

    tr

    output pulse(idealized waveform)

    tf

    t

    tstoff

    Fig. 12. BISS transistor switching time definition

    RC

    R2

    R1

    DUT

    mlb826

    VoRB

    (probe)450 Ω

    (probe)450 Ω

    oscilloscope oscilloscope

    VBB

    VI

    VCC

    Fig. 13. Test circuit for switching times

    11.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 11 / 16

    12. Package outline

    ReferencesOutlineversion

    Europeanprojection Issue dateIEC JEDEC JEITA

    SOT669 MO-235

    sot669_po

    11-03-2513-02-27

    Unit(1)

    mmmaxnommin

    1.20

    1.01

    0.15

    0.000.25

    0.50

    0.35

    4.41

    3.62

    2.2

    2.0

    6.2

    5.8

    0.85

    0.40

    A

    Dimensions (mm are the original dimensions)

    Note1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

    Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669

    A1 A2

    1.10

    0.95

    A3 b b2 b3

    0.1

    L2 w y

    θ

    b4 c c2 D(1) D1(1) E(1) E1(1)

    3.3

    3.1

    e

    1.27

    H L

    0.25

    0.19

    0.30

    0.24

    4.20 1.3

    0.80.25

    0.9

    0.7

    4.10

    3.80

    5.0

    4.8

    1.3

    0.8

    L1

    A C

    1/2 e

    w A

    0 5 mm

    scale

    e

    E1

    b

    c2

    A2

    1 2 3 4

    mountingbase

    D1

    c

    E

    b2

    b3

    b4

    H D

    L2

    L1

    C

    X

    y C

    q

    (A3)

    L

    A

    A1

    detail X

    Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669)

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 12 / 16

    13. Soldering

    0.6(3×)

    0.7(4×)

    0.25(2×)

    0.25(2×)

    0.6(4×)

    4.2

    4.7

    0.25(2×)

    1.27

    1.1

    2

    3.81

    0.9(3×)

    SP opening =Cu - 0.050

    SR opening =Cu + 0.075

    2.15

    2.55

    3.45 3.5

    3.3

    solder lands

    solder resist occupied area

    solder paste125 µm stencil

    Dimensions in mm

    SOT669Footprint information for reflow soldering

    sot669_fr

    Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 13 / 16

    14. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

    PHPT60406NY v.1 20141208 Product data sheet - -

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 14 / 16

    15. Legal information

    15.1 Data sheet statusDocumentstatus [1][2]

    Productstatus [3]

    Definition

    Objective[short] datasheet

    Development This document contains data fromthe objective specification for productdevelopment.

    Preliminary[short] datasheet

    Qualification This document contains data from thepreliminary specification.

    Product[short] datasheet

    Production This document contains the productspecification.

    [1] Please consult the most recently issued document before initiating orcompleting a design.

    [2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

    changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

    15.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

    Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

    Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

    Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.

    15.3 DisclaimersLimited warranty and liability — Information in this document is believedto be accurate and reliable. However, Nexperia does not giveany representations or warranties, expressed or implied, as to the accuracyor completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an informationsource outside of Nexperia.

    In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

    Notwithstanding any damages that customer might incur for any reasonwhatsoever, Nexperia’s aggregate and cumulative liability towardscustomer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

    Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.

    Suitability for use in automotive applications — This Nexperiaproduct has been qualified for use in automotiveapplications. Unless otherwise agreed in writing, the product is not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's ownrisk.

    Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

    Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

    Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

    Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.

    Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

    Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.

    http://www.nexperia.com/profile/terms

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    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 15 / 16

    No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or thegrant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.

    Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from competent authorities.

    Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

    15.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

  • © Nexperia B.V. 2017. All rights reserved

    Nexperia PHPT60406NY40 V, 6 A NPN high power bipolar transistor

    PHPT60406NY All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 December 2014 16 / 16

    16. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................39 Thermal characteristics .........................................410 Characteristics .......................................................611 Test information ................................................... 1011.1 Quality information ............................................. 1012 Package outline ................................................... 1113 Soldering .............................................................. 1214 Revision history ...................................................1315 Legal information .................................................1415.1 Data sheet status ............................................... 1415.2 Definitions ...........................................................1415.3 Disclaimers .........................................................1415.4 Trademarks ........................................................ 15

    © Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 08 December 2014

    1. General description2. Features and benefits3. Applications4. Quick reference data5. Pinning information6. Ordering information7. Marking8. Limiting values9. Thermal characteristics10. Characteristics11. Test information12. Package outline13. Soldering14. Revision history15. Legal information