PMV16XN - Nexperia AoSoCnw (( 25( Rcc CnIetE CoEoCroh Nexperia PMV16XN 20 V, N-channel Trench MOSFET...

PMV16XN20 V, N-channel Trench MOSFET11 November 2014 Product data sheet

1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.

2. Features and benefits• Trench MOSFET technology• Low threshold voltage• Very fast switching• Enhanced power dissipation capability of 1200 mW

3. Applications• LED driver• Power management• Low-side load switch• Switching circuits

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage - - 20 V

VGS gate-source voltage

Tj = 25 °C

-12 - 12 V

ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - 8.6 A

Static characteristics

RDSon drain-source on-stateresistance

VGS = 4.5 V; ID = 6.8 A; Tj = 25 °C - 16 20 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting padfor drain 6 cm2.

© Nexperia B.V. 2017. All rights reserved

Nexperia PMV16XN20 V, N-channel Trench MOSFET

PMV16XN All information provided in this document is subject to legal disclaimers.

Product data sheet 11 November 2014 2 / 15

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain

1 2

3

TO-236AB (SOT23)

S

D

G

017aaa253

Table 3. Ordering informationPackageType number

Name Description Version

PMV16XN TO-236AB plastic surface-mounted package; 3 leads SOT23

6. MarkingTable 4. Marking codesType number Marking code

[1]

PMV16XN %BZ

[1] % = placeholder for manufacturing site code





7. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 20 V

VGS gate-source voltage

Tj = 25 °C

-12 12 V

VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 8.6 A

VGS = 4.5 V; Tamb = 25 °C [1] - 6.8 A

ID drain current

VGS = 4.5 V; Tamb = 100 °C [1] - 4.3 A

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 27 A

[2] - 510 mWTamb = 25 °C

[1] - 1200 mW

Ptot total power dissipation

Tsp = 25 °C - 6940 mW

Tj junction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

IS source current Tamb = 25 °C [1] - 1.2 A

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting padfor drain 6 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.





Tj (°C)- 75 17512525 75- 25

017aaa123

40

80

120

Pder(%)

0

Fig. 1. Normalized total power dissipation as afunction of junction temperature

Tj (°C)- 75 17512525 75- 25

017aaa124

40

80

120

Ider(%)

0

Fig. 2. Normalized continuous drain current as afunction of junction temperature

aaa-015214

1

10-1

10

102

lD(A)

10-2

VDS (V)10-1 102101

DC; Tamb = 25 °C; 6 cm2tp = 100 ms

tp = 10 ms

DC; Tsp = 25 °C

tp = 1 ms

tp = 100 µs

tp = 10 µs

IDM = single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage

8. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

[1] - 208 245 K/Win free air

[2] - 88 104 K/W

Rth(j-a) thermal resistancefrom junction toambient

t ≤ 5 s [2] - 55 65 K/W





Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistancefrom junction to solderpoint

- 13 18 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.

aaa-013409

tp (s)10-3 102 10310110-2 10-1

102

10

103

Zth(j-a)(K/W)

1

duty cycle = 1

0.200.25

0.500.75

0.33

0.02

0.01

0

0.100.05

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical valuesaaa-013411

tp (s)10-3 102 10310110-2 10-1

102

10

103

Zth(j-a)(K/W)

10

0.010.02

0.33

0.75

duty cycle = 1

0.050.100.200.25

0.50

FR4 PCB, mounting pad for drain 6 cm2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values





9. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-sourcebreakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V

VGSth gate-source thresholdvoltage

ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.65 0.9 V

IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA

VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current

VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA

VGS = 4.5 V; ID = 6.8 A; Tj = 25 °C - 16 20 mΩ

VGS = 4.5 V; ID = 6.8 A; Tj = 150 °C - 23 29 mΩ

VGS = 2.5 V; ID = 6.0 A; Tj = 25 °C - 18 24 mΩ

RDSon drain-source on-stateresistance

VGS = 1.8 V; ID = 2.1 A; Tj = 25 °C - 22 33 mΩ

gfs forwardtransconductance

VDS = 10 V; ID = 2 A; Tj = 25 °C - 12 - S

RG gate resistance f = 1 MHz - 2 - Ω

Dynamic characteristics

QG(tot) total gate charge - 13.4 20.2 nC

QGS gate-source charge - 1.5 - nC

QGD gate-drain charge

VDS = 10 V; ID = 7.3 A; VGS = 4.5 V;Tj = 25 °C

- 2.6 - nC

Ciss input capacitance - 1240 - pF

Coss output capacitance - 145 - pF

Crss reverse transfercapacitance

VDS = 10 V; f = 1 MHz; VGS = 0 V;Tj = 25 °C

- 125 - pF

td(on) turn-on delay time - 9 - ns

tr rise time - 24 - ns

td(off) turn-off delay time - 31 - ns

tf fall time

VDS = 10 V; ID = 7.3 A; VGS = 4.5 V;RG(ext) = 6 Ω; Tj = 25 °C

- 36 - ns

Source-drain diode

VSD source-drain voltage IS = 1.2 A; VGS = 0 V; Tj = 25 °C - 0.65 1.2 V





VDS (V)0 542 31

aaa-015610

ID(A)

28

20

12

4

0

8

16

24

VGS = 1.3 V

1.5 V

1.7 V

1.8 V

4.5 V3.0 V2.5 V2.0 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as afunction of drain-source voltage; typical values

017aaa796

VGS (V)0 1.20.80.4

10-5

10-4

10-3

10-2

ID(A)

10-6

min typ max

Tj = 25 °C; VDS = 5 V

Fig. 7. Sub-threshold drain current as a function ofgate-source voltage

ID (A)0 252010 155

aaa-015611

0.04

0.02

0.06

0.08

RDSon(Ω)

0

1.5 VVGS = 1.4 V 1.6 V 1.7 V

1.8 V

1.9 V

2.0 V2.2 V

2.6 V3.0 V

4.5 V

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a functionof drain current; typical values

VGS (V)0 542 31

aaa-015612

0.04

0.02

0.06

0.08

RDSon(Ω)

0

Tj = 25 °C

Tj = 150 °C

ID = 6.8 A

Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values





VGS (V)0 321

aaa-01561328ID(A)

0

4

8

12

16

20

24

Tj = 25 °C

Tj = 150 °C

VDS > ID × RDSon

Fig. 10. Transfer characteristics: drain current as afunction of gate-source voltage; typical values

Tj (°C)-60 1801200 60

017aaa800

1.00

0.75

1.25

1.50

a

0.50

Fig. 11. Normalized drain-source on-state resistanceas a function of junction temperature; typicalvalues

Tj (°C)-75 17512525 75-25

017aaa801

0.5

1.0

1.5

VGS(th)(V)

0

max

typ

min

ID = 0.25 mA; VDS = VGS

Fig. 12. Gate-source threshold voltage as a function ofjunction temperature

VDS (V)10-1 102101

017aaa802

103

102

104

C(pF)

10

Ciss

Coss

Crss

f = 1 MHz; VGS = 0 V

Fig. 13. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues





QG (nC)0 15105

017aaa803

1.5

3.0

4.5

VGS(V)

0

ID = 6 A; VDS = 10 V; Tamb = 25 °C

Fig. 14. Gate-source voltage as a function of gatecharge; typical values

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 15. MOSFET transistor: Gate charge waveformdefinitions

aaa-015614

VSD (V)0 1.20.80.4

2

3

1

4

5Is

(A)

0

Tj = 25 °C

Tj = 150 °C

VGS = 0 V

Fig. 16. Source current as a function of source-drain voltage; typical values

10. Test information

t1t2

P

t006aaa812

duty cycle δ =

t1

t2

Fig. 17. Duty cycle definition





11. Package outline

ReferencesOutlineversion

Europeanprojection Issue date

IEC JEDEC JEITA

SOT23 TO-236AB

sot023_po

14-06-1914-09-22

Plastic surface-mounted package; 3 leads SOT23

bp

D

A

A1

Lp

Q

HE

E

0 1 2 mm

scale

c1 2

3

B

w B

e

e1

v A

A X

Unit

mmmaxnommin

1.1 0.1 0.15 3.0 1.40.2

A

Dimensions (mm are the original dimensions)

A1 bp

0.48

c D E e e1

0.95

HE Lp Q v w

0.11.92.1 0.150.9 0.09 2.8 1.20.38

2.5 0.45

0.45

0.55

detail X

Fig. 18. Package outline TO-236AB (SOT23)





12. Soldering

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5(3×)0.6(3×)

0.6(3×)

0.7(3×)

3

1

3.3

2.9

1.7

1.9

2

Dimensions in mm

Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4(2×)

1.2(2×)

2.2

2.6

Dimensions in mm

Fig. 20. Wave soldering footprint for TO-236AB (SOT23)





13. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

PMV16XN v.1 20141111 Product data sheet - -





14. Legal information

14.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

14.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.

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In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

Notwithstanding any damages that customer might incur for any reasonwhatsoever, Nexperia’s aggregate and cumulative liability towardscustomer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

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Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.

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In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,customer (a) shall use the product without Nexperia’s warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyondNexperia’s specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies Nexperia for anyliability, damages or failed product claims resulting from customer design anduse of the product for automotive applications beyond Nexperia’sstandard warranty and Nexperia’s product specifications.

Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

14.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.





15. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Marking ................................................................... 27 Limiting values .......................................................38 Thermal characteristics .........................................49 Characteristics .......................................................610 Test information ..................................................... 911 Package outline ................................................... 1012 Soldering .............................................................. 1113 Revision history ...................................................1214 Legal information .................................................1314.1 Data sheet status ............................................... 1314.2 Definitions ...........................................................1314.3 Disclaimers .........................................................1314.4 Trademarks ........................................................ 14

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 11 November 2014

PMV16XN - Nexperia AoSoCnw (( 25( Rcc CnIetE CoEoCroh Nexperia PMV16XN 20 V, N-channel Trench MOSFET...

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