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Transistors and Microelectronics

ESE216

(IBM)Pentium, Intel

EE

Tim

es, B

erke

ley

Des

ign

Tech

.(D

. Rom

mel

)

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Electronics evolution: micro to nano

1946 -ENIAC

1947 - Transistor

2000 -ICMauchly and Eckert

Bardeen, Brattain and Shockley

IBM

(Wikipedia)MOSFET

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Chip complexity

Compare to a street map

(Intel Quad Core291M transistors)

Complexity of the USA

Submicron and nanoscale dimensions

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Moore’s Law

(Source: Semic. Int., April 2004)

Moore’s Law: chip complexity doubles every two years (expected to go on for another 20yrs)

Year of introduction

1K

1M

1G

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Nanometer feature sizes

(IBM)

SEM picture metallization

(Source: AMD)

Nine levels of metallization(with low-k dielectric and SiC-based barriers)

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Evolution of Transistor’s Feature Size

(Source: ITRS)

TSi=7nmLgate=6nm

Source Drain

Gate

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Two types of transistors

Bipolar junction transistor (BJT): npn and pnpMetal Oxide Semiconductor Field Effect Transistor or MOSFET: nmos, pmos and cmos

ComparisonBJT MOSFETLarger Smaller Needs more power Low power consumptionComplex to fabricate Easier to fabricate (to a

certain extent)Faster SlowerLower noise Higher noise

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Wafer level fabrication: billions of transistors

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MOSFET: current flow

ELECTRON

HOLE DRAIN

SOURCE

CMOS ON

CMOS OFF

N-CHANNELGATE

P-Si

(Source: Scientific American, Solid-state Century, Jan. 98)

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MOSFET: Hydraulic Equivalent

G

S DB

drain

ball cock

sluizegate

source

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MOSFET as an Amplifier

Mike

Idinput output