MMD70R600P

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MMD70R600P Datasheet

Jun. 2014 Revision 1.0 MagnaChip Semiconductor Ltd .1

Parameter Value Unit

VDS @ T j,max 750 V

RDS(on),max 0.6 Ω

VTH,typ 3 V

ID 7.3 A

Q g,typ 23 nC

Order Code Marking Temp. Range Package Packing RoHS Status

MMD70R600PRH 70R600P -55 ~ 150 ℃ TO-252 Reel Halogen Free

MMD70R600P700V 0.6 N-channel MOSFET

Description

MMD70R600P is power MOSFET using magnachip ’ s advanced super junction technology that canrealize very low on-resistance and gate charge. It will provide much high efficiency by usingoptimized charge coupling technology. These user friendly devices give an advantage of Low EMI todesigners as well as low switching loss.

Features

Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested

Green Package – Pb Free Plating, Halogen Free

Key Parameters

Ordering Information

Applications

PFC Power Supply Stages

Switching Applications

Adapter

Motor Control

DC – DC Converters

D GS

G

D

S

Package & Internal Circuit

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Parameter Symbol Rating Unit Note

Drain – Source voltage V DSS 700 V

Gate – Source voltage V GSS ± 30 V

Continuous drain current I D 7.3 A T C=25℃

4.6 A T C=100 ℃

Pulsed drain current (1) IDM 21.9 A

Power dissipation P D 71 W

Single - pulse avalanche energy E AS 142 mJ

MOSFET dv/dt ruggedness dv/dt 50 V/ns

Diode dv/dt ruggedness dv/dt 15 V/ns

Storage temperature T stg -55 ~150 ℃

Maximum operating junctiontemperature T j 150

℃

1) Pulse width t P limited by T j,max

2) I SD ≤ ID, VDS peak ≤ V(BR)DSS

Parameter Symbol Value Unit

Thermal resistance, junction-case max R thjc 1.75 ℃ /W

Thermal resistance, junction-ambient max R thja 62.5 ℃ /W

Thermal Characteristics

Absolute Maximum Rating (T c=25 unless otherwise specified)

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Parameter Symbol Min. Typ. Max. Unit Test Condition

Drain – SourceBreakdown voltage V(BR)DSS 700 - - V V GS = 0V, I D=0.25mA

Gate Threshold Voltage V GS(th) 2 3 4 V V DS = V GS, ID=0.25mA

Zero Gate VoltageDrain Current IDSS - - 1 μ A V DS = 700V, V GS = 0V

Gate Leakage Current I GSS - - 100 nA V GS = ±30V, V DS =0V

Drain-Source OnState Resistance RDS(ON) - 0.54 0.6 Ω VGS = 10V, I D = 2.1A


Input Capacitance C iss - 681 -

pF

VDS = 25V, V GS = 0V,f = 1.0MHzOutput Capacitance C oss - 34.9 -

Reverse Transfer Capacitance C rss - 470 -

Effective Output CapacitanceEnergy Related (3) Co(er) - 22 - VDS = 0V to 560V,VGS = 0V,f = 1.0MHz

Turn On Delay Time t d(on) - 14.4 -

ns VGS = 10V, R G = 25Ω, VDS = 350V, I D = 7.3A

Rise Time t r - 27.6 -

Turn Off Delay Time t d(off) - 68 -

Fall Time t f - 26 -

Total Gate Charge Q g - 23 -

nC VGS = 10V, V DS =560VID = 7.3AGate – Source Charge Q gs - 4.3 -

Gate – Drain Charge Q gd - 13 -

Gate Resistance R G - 3.2 - Ω VGS = 0V, f = 1.0MHz

3) C o(er) is a capacitance that gives the same stored energy as C OSS while V DS is rising from 0V to 80% V (BR)DSS

Static Characteristics (T c =25 unless otherwise specified)

Dynamic Characteristics (T c=25 unless otherwise specified)

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Continuous Diode ForwardCurrent ISD - - 7.3 A

Diode Forward Voltage V SD - - 1.4 V I SD = 7.3 A, VGS = 0 V

Reverse Recovery Time t rr - 344 - nsISD = 7.3 Adi/dt = 100 A/μs VDD = 100 V

Reverse Recovery Charge Q rr - 4.3 - μC

Reverse Recovery Current I rrm - 13.4 - A

Reverse Diode Characteristics (T c=25 unless otherwise specified)

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Characteristic Graph

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Test Circuit

VDS

10V

1mA DUT

100K Ω

10V

Same type as DUT

+

-

VDD

DUT

+

-

Same type as DUT

VDS+-

IS

R g10K Ω

Vgs ± 15V

L

IF

VDD

DUT

+

-

ID

VDS

Vgstp

RL

VDD

DUT

+

-

I AS

VDS

R g

Vgstp

L

10V

VGS

Charge

Qg

Q gs Qgd

VDS

VGS

90%

10%

Td(on) tr

ton

Td(off) tf

toff

VDD

tp t AV

VDS(t)

BVDSS

I AS

Rds(on) * I AS

trr

ta tbIFM

IRM

d i/d t

0.25 I RM

0.75 I RM

0.5 I RM

VR

VRM(REC)

Fig15-1. Gate charge measurement circuit Fig15-2. Gate charge waveform

Fig16-1. Diode reverse recovery test circuit Fig16-1. Diode reverse recovery test waveform

Fig17-1. Switching time test circuit for resistive load Fig17-2. Switching time waveform

Fig18-1. Unclamped inductive load test circuit Fig18-2. Unclamped inductive waveform

R g25 Ω

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Physical Dimensions

TO-252 (D-PAK) , 3L

Dimensions are in millimeters, unless otherwise specified

Worldwide Sales Support Locations

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DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear powergeneration, medical appliances, and devices or systems in which malfunction of any Product can reasonably beexpected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in suchapplications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibilityfor use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChipSemiconductor Ltd.

MMD70R600P

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