LTV-8062 Product Data Sheet Photocoupler

LITE-ON DCC

RELEASE

BNS-OD-FC001/A4

LITE-ON Technology Corp. / OptoelectronicsNo.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.

Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660http://www.liteon.com/opto

PhotocouplerProduct Data SheetLTV-8062

Spec No. :DS70-2017-0055Effective Date: 05/17/2019Revision: B

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Photocoupler LTV-806X series

Part No.: LTV-806X series BNC-OD-FC002/A4 Rev. : -

1. DESCRIPTION 1.1 Features

Isolation voltage between input and output Viso : 5,000 Vrms

4pin DIP Zero-cross photocoupler, triac driver output

High repetitive peak off-state voltage VDRM : Min. 600V

High critical rate of rise of off-state voltage ( dV/dt : MIN. 1000V / µs )

Safety approval

UL 1577

VDE DIN EN60747-5-5 (VDE 0884-5)

cUL CA5A

CQC GB4943.1-2011/ GB8898-2011 (meet Altitude up to 5000m)

Nordic Safety ( DEMKO)

1.2 Applications

AC Motor Drives

AC Motor Starters

E.M. Contactors

Lighting Controls

Solenoid/Valve Controls

Solid State Relays

Static Power Switches

Temperature Controls

2/13



2. PACKAGE DIMENSIONS

2.1 LTV-806X 2.2 LTV-806XM

2.3 LTV-806XS

Notes : 1. 2-digit year code, example : 2016 = 16 2. 2-digit work week ranging from ‘01’ to ‘53’ 3. Factory identification mark shall be marked

(W: China-CZ, Y: Thailand) 4. IFT Rank

5. “●” for halogen free option.

6. “4”or”V” for VDE option. *Dimensions in millimeters (inches).

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3. TAPING DIMENSIONS

3.1 LTV-806XS-TA 3.2 LTV-806XS-TA1

3.3 Quantities Per Reel

Description Symbol Dimension in mm (inch)

Tape wide W 16±0.3 (0.63)

Pitch of sprocket holes P0 4±0.1 (0.15)

Distance of compartment F 7.5±0.1 (0.295)

P2 2±0.1 (0.079)

Distance of compartment to compartment

P1 12±0.1 (0.472)

Package Type TA/TA1

Quantities (pcs) 1000

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3.4 LTV-806XS-TP

3.5 Quantities Per Reel

Description Symbol Dimension in mm (inch)

Tape wide W 16±0.3 (0.63)

Pitch of sprocket holes P0 4±0.1 (0.15)

Distance of compartment F 7.5±0.1 (0.295)

P2 2±0.1 (0.079)

Distance of compartment to compartment

P1 8±0.1 (0.472)

Package Type TP

Quantities (pcs) 2000

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*1. AC For 1 Minute, R.H. = 40 ~ 60%

Isolation voltage shall be measured using the following method.

(1) Short between anode and cathode on the primary side and between collector and emitter on the

secondary side.

(2) The isolation voltage tester with zero-cross circuit shall be used.

(3) The waveform of applied voltage shall be a sine wave.

*2. For 10 Seconds

4. RATING AND CHARACTERISTICS

4.1 Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Rating Unit

Input

Forward Current IF 50 mA

Reverse Voltage VR 6 V

Power Dissipation PD 120 mW

Junction Temperature TJ 125 oC

Output

Off-State Output Terminal Voltage VDRM 600 V

On-State RMS Current ID(RMS) 100 mA

Peak Repetitive Surge Current

( PW=100µs, 120pps ) VTSM 1 A

Output Power Dissipation PO 300 mW

Junction Temperature TJ 125 oC

Total Power Dissipation Ptot 330 mW

*1. Isolation Voltage Viso 5000 Vrms

Ambient Operating Temperature Range TA -55 ~ +110 oC

Storage Temperature Tstg -55 ~ +150 oC

*2. Soldering Temperature TL 260 oC

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4.2 Recommended Operating Conditions (Note)

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device.

Additionally, each item is an independent guideline respectively. In developing designs using this product,

please confirm specified characteristics shown in this document.

Characteristics Symbol Min. Typ. Max. Unit

Supply Voltage VAC - - 240 Vac

Forward Current

LTV-8061

IF

22.5 25 30 mA

LTV-8062 15 20 30 mA

LTV-8063 7.5 10 30 mA

Operating Temperature Topr -25 - 85 °C

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4.2 ELECTRICAL OPTICAL CHARACTERISTICS at Ta=25°C

Parameter Symbol Min. Typ. Max. Unit Test Condition

Input Forward Voltage VF — 1.2 1.4 V IF=20mA

Reverse Current IR — — 10 µA VR=3V

Output

*1 Peak Blocking Current,

Either Direction IDRM — — 1 µA VDRM=600V

Peak On-State Voltage, Either

Direction VTM — — 3.0 V ITM=100 mA Peak

*2 Critical Rate of Rise of Off-State

Voltage dv/dt 1000 — — V/µs

COUPLED

Led Trigger

Current, Current

Required to Latch

Output, Either

Direction

LTV-8061

IFT

— — 15

mA Main Terminal

Voltage = 3V LTV-8062 — — 10

LTV-8063 — — 5

Holding Current, Either Direction IH — 200 — µA

ZERO

CROSSING

Inhibit Voltage VINH — 5 20 Volts

IF=Rated IFT, MT1-

MT2 Voltage above

which device will

not trigger

Leakage in Inhibited State IDRM2 — — 500 µA IF = Rated IFT, Rated

VDRM , Off State

*1 Test voltage must be applied within dv/dt rating.

*2 This is static dv/dt. Commutating dv/dt is a function of the load-driving thyristor(s) only.

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5. CHARACTERISTICS CURVES (TYPICAL PERFORMANCE)

Fig.1 Forward Current vs. Fig.2 On-state Current vs. AmbientTemperature

Fig.4 Forward Current vs. Forward

F

0-40

60 C40 C20 C

Ambient TemperatureFig.6 Holding Current vs.

TemperatureFig.5 On-state Voltage vs. Ambient

Fig.3 Minimum Trigger Currentvs. Ambient Temperature

Forw

ard

cur

rent

I (

mA

)

I ,

on-

stat

e cu

rren

t (A

)Fo

rwar

d c

urre

nt IF

(m

A)

On-

stat

e vo

ltag

e V T

(V)

Min

imum

trig

ger

cur

rent

IFT

(mA

)

Hol

din

g c

urre

nt IH

(m

A)

Ambient temperature Ta ( C) Ambient Temperature Ta ( C)

Forward voltage VF (V)Ambient temperature ( C)

Ambient temperature Ta ( C) Ambient temperature Ta ( C)

0 20 40 60 80 100

60

0

0.41

2.0

0.0120 40 60 80 10020

1.0100

200

10

o

o

o

Ambient Temperature

o o

Voltage

IT= 100mA3.0

10

100

8

6

4

2

50

40

30

20

10

100

1

o

80 Co

100 C

0.05

0.10

TM

VP= 6VRL= 100

2.6

2.2

1.4

1.8

40 8060o

VP= 6V

0.8 1.2 1.6

o

806040o

0.1

120-20 -40 -20 0 804020 60 100 120

Fig.3 Normalized Trigger Current vs Ambient Temperature

Fig.5 Normalized On-state Voltage vs Ambient Temperature

Fig.6 Normalized Holding Current vs Ambient Temperature

0

10

20

30

40

50

60

-60 -40 -20 0 20 40 60 80 100 120

I F -

Fo

rwa

rd C

urr

en

t -

mA

TA - Ambient Temperature - oC

0

20

40

60

80

100

120

-60 -40 -20 0 20 40 60 80 100 120

I TM

-O

n S

tate

Cu

rre

nt

-m

A


0.1

1

10

100

0.6 0.8 1 1.2 1.4 1.6

I F-F

orw

ard

Cu

rre

nt

-m

A

VF - Forward Voltage - V

TA=110oC

TA=75oC

TA=25oC

TA=0oC

TA=-55oC

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-60 -40 -20 0 20 40 60 80 100 120

N.

VT

M-

No

rma

lize

d O

n-S

tate

vo

lta

ge

-V


ITM = 100mA ,

Normalized to TA=25oC

0.1

1

10

-60 -40 -20 0 20 40 60 80 100 120

N.

I H-

No

rma

lize

d H

old

ing

Cu

rre

nt

-

mA


0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-60 -40 -20 0 20 40 60 80 100 120

N.I

FT

-N

orm

ali

zed

Tri

gg

er

LED

Cu

rre

nt


VTM=3V

Normalized to TA =25oC

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0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-60 -40 -20 0 20 40 60 80 100 120

N.

I DR

M2

-N

orm

ali

zed

Pe

ak

O

ff-s

tate

Cu

rre

nt

-n

A


IF= Rated IFT

Vdrm= 600V

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-60 -40 -20 0 20 40 60 80 100 120

N.V

INH

-N

orm

ali

zed

In

hib

it V

olt

ag

e


IF= Rated IFT

Normalized to TA =25oC

Fig.7 Off-state Current vs Ambient Temperature

1

10

100

1000

1 1.5 2 2.5 3

I TM

-O

n-S

tate

Cu

rre

nt

-m

A

VTM - On-State Voltage - V

IF=Rated IFT

TA = 25oC

Fig.8 On-state Current vs On-state Voltage

0.1

1

10

100

1000

-60 -40 -20 0 20 40 60 80 100 120

N.

I DR

M-

No

rma

lize

d P

ea

k

Off

-sta

te C

urr

en

t -

nA


VDRM=Rated VDRM

Normalized to TA=25oC

Fig.9 Leakage in Inhibited State vs Ambient Temperature

Fig.10 Inhibit Voltage vs Ambient Temperature

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6. TEMPERATURE PROFILE OF SOLDERING 6.1 IR Reflow soldering (JEDEC-STD-020E compliant)

One time soldering reflow is recommended within the condition of temperature and time profile shown below. Do not solder more than three

times.

Profile item Conditions

Preheat

- Temperature Min (TSmin)

- Temperature Max (TSmax)

- Time (min to max) (ts)

150˚C

200˚C

90±30 sec

Soldering zone

- Temperature (TL)

- Time (tL)

217˚C

60 sec

Peak Temperature (TP) 260˚C

Ramp-up rate 3˚C / sec max.

Ramp-down rate 3~6˚C / sec

60 ~ 120 sec25 C

150 C

200 C

260 C

217 C

60 sec

Time (sec)

Tem

pera

ture

( C

)

20 sec

Tsmax

ts (Preheat)

tL (Soldering)Tsmin

TL

TP

Ramp-down

Ramp-up

35~70 sec

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6.2 Wave soldering (JEDEC22A111 compliant)

One time soldering is recommended within the condition of temperature.

Temperature: 260+0/-5˚C

Time: 10 sec.

Preheat temperature:25 to 140˚C

Preheat time: 30 to 80 sec.

6.3 Hand soldering by soldering iron

Allow single lead soldering in every single process. One time soldering is recommended.

Temperature: 380+0/-5˚C

Time: 3 sec max.

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7. RRECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD) Unit: mm

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8. NAMING RULE

9. NOTES

LiteOn is continually improving the quality, reliability, function or design and LiteOn reserves the right to make changes without further notices.

The products shown in this publication are designed for the general use in electronic applications such as office automation equipment, communications devices, audio/visual equipment, electrical application and instrumentation.

For equipment/devices where high reliability or safety is required, such as space applications, nuclear power control equipment, medical equipment, etc, please contact our sales representatives.

When requiring a device for any ”specific” application, please contact our sales in advice. If there are any questions about the contents of this publication, please contact us at your convenience. The contents described herein are subject to change without prior notice. Immerge unit’s body in solder paste is not recommended.

LTV- 806(X)(X)-(X)-G

(1) DEVICE PART NUMBER

(2) IFT Rank

(4) TAPING TYPE (TA,TA1,TP) Please refer to orientation of taping on Page 3

(5) Halogen free option

Example : LTV-8061S-TA-G

(3) FORM TYPE (S, M or none)

LTV 806(X)(X)(X)-V-G

(1) DEVICE PART NUMBER

(2) IFT Rank

(4) TAPING TYPE (TA,TA1,TP) Please refer to orientation of taping on Page 3

(5) VDE option

(6) Halogen free option

Example : LTV8061STA-V-G

(3) FORM TYPE (S, M or none)

LTV-8062 Product Data Sheet Photocoupler

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