JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX...

14
AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort (CC! Reliability Lab., Sunnyvale, Calif.) iLl F BC 102/NF 401 Tinclas CSCL 09A G3/33 15650 JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM FINAL REPORT FOR JANTX DIODE 1N 759A MARCH 1977 Prepared for GEORGE C. MARSHALL SPACE PLIGHT CENTER NATIONAL AERONAUTIC:; AND SPACE ADMINISTRATION Pb,haII Space Flight Center, Alabama 35812 MSFCJNASA CONTRACT No. NAS8 .31944 O. pt V '4• HIRO TA1EDA OCA RELIABILITY LABORATORY SEC;AL P,- 0 -DUCTS DlvsSIO\ 975 9ENiCA AVE SJ.\Y'. ALE. CAL!IA 94036 - AS N REUAUTY LAso*rev - -- https://ntrs.nasa.gov/search.jsp?R=19780014354 2020-02-29T05:33:40+00:00Z

Transcript of JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX...

Page 1: JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort

AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE1W7591 Final Reçort (CC! Reliability Lab.,Sunnyvale, Calif.) iLl F BC 102/NF 401 Tinclas

CSCL 09A G3/33 15650

JAN TRANSISTOR AND DIODE

CHAR RIZATION TEST PROGRAM

FINAL REPORTFOR

JANTX DIODE

1N 759A

MARCH 1977Prepared

for

GEORGE C. MARSHALL SPACE PLIGHT CENTERNATIONAL AERONAUTIC:; AND SPACE ADMINISTRATION

Pb,haII Space Flight Center, Alabama 35812

MSFCJNASA CONTRACT No. NAS8 .31944 O.

pt

V '4•HIRO TA1EDA

OCA RELIABILITY LABORATORYSEC;AL P,- 0-DUCTS DlvsSIO\

975 9ENiCA AVESJ.\Y'. ALE. CAL!IA 94036

-AS

NREUAUTY LAso*rev- --

https://ntrs.nasa.gov/search.jsp?R=19780014354 2020-02-29T05:33:40+00:00Z

Page 2: JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort

JAN TRANSISTOR AND DIODE

CHARACTERIZATION TEST PROGRAM

FINAL REPORTFOR

JANTX DIODE

1N759A

MARCH 1977Prepared

for

GEORGE C. MARSHALL SPACE FLIGHT CENTERNATIONAL AERONAUTICS AND SPACE ADMINISTRATION

Phrh.uI Space Flight Center, Alabama 35812

MSFCINASA CONTRACT No. NAS8-31944

by

HIRO TAKEDA

OCA RELIABILITY LABORATORYS°ECIAL PRODUCTS DlVISIO

975 BE\CA AvESU?.\Y'. ALE, CALIORNlA 94C36

OCA RELIABILITY LABORATORY

Page 3: JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort

FORWARD

This report is a statistical summary of the electrical

characterization performed on NASA Contract NA8-31944.This is one of a group of thirty-nine (39) such reportsprepared on selected JAN and JANTX Transistors and Diodes

for the George C. Marshall Space Flight Center, Huntsville,

Alabama. The Contracting Officer's Technical Representative

was Mr. Howard B. Meeks.

This work was performed by DCA Reliability Laboratory,

Special Products Division, Sunnyvale, California under the

management of Mr. Robert Starr with the special assistance

Of Mr. Barry Lorenzo, Nr. Kenneth Radford and Mr. Hiroharu

Takeda.

ORIGINAL pAGeOF POOR QUAUN

11

Page 4: JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort

CONTENTS

1 60. INTRODUCTION . . . . . -. . . . . . . . . . . . . * . . . 1-1

1.1 Sample Selection . . - . .. .. . . . . . . . . - 1-112 Procurement Guidelines . . . . a - . . . . . . . . 1-1

2.0 TEcINIcALSUMMA.RY . . a a...... . . . . .21

2.1 TEST PARAMETERS AND CONDITIONS . . ........... 2-a

2.1.1 Reverse Current (Ii) . . . ........ 2-I

2.1.2 Zener Voltage (V1) ............... 2-i

2.1.4 Zener Impedance (Zz) . . . . . . . . . . . . . . 2-1

2.1.6 Thermal Resistance, test in DEC/V a . e . 21

2.2 UNIT DEfiNITIONS . . . - . . . ............ 2-2

3.0 STATISTICAL SUMMARY . ...... 3-1

4 .0 HISTOGRAM DATA . . . . - . . . . ... . . . a . . . . . . 4-1

4.1 . . . . * . . 4-2

4.2 zi * • • . . . . . .....a . . . . . . . . . 4-74.3 Z2• • • • ...................• 4-14

4.4 . . . . . . . * . . . . . . . * . . . . . . . 4-21

4.5

ZZ2* . a • . - . . . a.. • . . a a • . . a a . a • 424

4.6 . . . . * . . . . . . . - ... - . - . . . . 4-27

iii

Page 5: JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort

CONTENTS (CONTINUED)

5.0 NUMERICAL DATA TA - 25°C

(Book 2 EC 43 & EG 02 MSFC only) - . - 5-1

6.0 NUMERICAL DATA TA = +1500C

(Book 2 EC 43 & BC 02 MSFC only) . . . . 6-1

7.0 NUMERICAL DATA TA - -65°C

(Book 2 EC 43 & EG 02 MSFC only) . . - 7-1

iv

Page 6: JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort

LIST OF ILLUSTRATIONS

FIGURE

2-1 Internal Construction Siemens . . . . . . . . . . . . . 2-3

2-2 Internal Construction Texas Instruments ........2-3

V

Page 7: JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort

1.0 INTRODUCTION

The objective of this characterization program is to

provide the necessary data to create a new class of

19500 detail specifications "JAN A CLASS".

1.1 SAMPLE SELECTION

Sample selection was made according to the following

criteria:

1. Manufacturer or qualified distributor.

2. Two vendors.

3. Two date codes.

1.2 PROCUREMENT GUIDELINES

The general guidelines for procurement were:

1. Two QPL vendors

2. JAN or JANTX

3. Two (2) manufacturing lots (Date Codes), twenty-

seven (27) from each lot.

1-I

Page 8: JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort

2.0 TECHNICAL SUMMARY

The devices used in this report were JANTX 1N759 Diodes

manufactured by Siemens and Texas Instruments.

All data was acquired with three (3) digit accuracy.

The data processing and calculation of statistical

parameters was performed by the Tektronix S-3260

computer system using four (4) digit display.

2.1 TEST PARAMETERS AND CONDITIONS

2.1.1 I V • 9.6V (80% of Rated V z ) TA = 25°C & 150°C

2.1.2 V ZI Iz= 20.OinATA = 25°C, -65°C & 125°C

2.1.3 V2 I = 35.OmA TA 25°C, -65°C & 125°C

2.1.4 Z1Iz = 20.OmA TA 25°C

2.1.5 Z2 z = 0.25mA TA 25°C

2.1.6 9J-C TA 100°C

2-1

Page 9: JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort

\Milli ORIG1

pAGe is

OF POOR QWILI'

2. 2 UNIT DEFINITIONS

NAME

KiloMullMicroNanoP1cc

SYMBOL

KHUNP

MULTIPLIER

10101010 2

Example using a statistical summary section:

IN AAp5 AT 25 D.EGMEFSAT VP : 2.64 VOLTS

!j4)F(I/ 7603 ?.SIIM 21.7U ! 2. 01014 ! 2.090P4 ! 2.780M !MCI 10/ 7550! 2.423M 276.9t1 ! 2.(1Iu 14 2.0 30,4 ! ?.780M !•!SR.M/ 7508 2.97M 42b.0 ! 1.$0M 2.4901 3.4bOM !

--------------------------------I ------

Mliii Micro

Example using a histogram:

UR5Ills ,s,sJi1$Il., 1Sl$,.l.1alleg es ll$Hsiisi 1111111 lUll ,uliuIs.".ur.

1.1'I 161PI 2091

5Th 3JI L5t1.37fl 1.81 2.33H 281P1 3.29NPkQLJT 0 \W (:CL :Ir:i

Page 10: JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort
Page 11: JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort

3.0 STATISTICAL SUMMARY

The Statistical Summary, pages 3-2 to 3-4, are a

consolidated presentation of the data acquired for-

matted for easy Vendor to Vendor and date code to

date code analysis. Each parameter is presented

with Test Conditions, Mean, Standard Deviation,

Lowest Reading, 10% Point (where 10% of all readings

are equal to or less than the indicated reading),

90% Point (where 90% of all readings are equal to

or less than the indicated reading) and the Highest

Reading.

It should be noted the Mean presented in the summary

may vary slightly from that presented on the Histograms

due to a slight variation in the data base used for

calculation.

EXAMPLE:

SIEMENS:'R

V = 9.6V TA = 25°C

Summary: MEAN 5.713N

Histogram: MEAN 4.717N

OCA RELIABILITY LABORATORY

3-1

Page 12: JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort

IJLP F p:r !AetI.J1v UAKMAIURV

I'AlI' N(1trslW :IN750

VlM0)P : SI f:MF'S

l)A1R Ct1)I : 750

V1Nl(iI4 :IFXAS 1&. OAIE CI)P. : 750b

• see

I I I I S I I• . . . • .

!VEND / DC IIAN ! STO. imrv • l,fh PT ! 10% Pr ! 90% PT HIGH t1.I I S I S S• Csa sass saaeee.as

114 t'S AT 15 D p GREVSAr V19.b VIS1.TS

• Sans a. ________

S1LM/ 7530 S. 71 3w ?h.34 ! 10 1 0 l )P 50.00n' ! 5 1 08Or ! 13b.0t

T.i./ 750t,! 75. 35N ! 10.4L 11.40N ! I Lc.tffi ! 144. ON ! 79.0I4I S I I I I I• nsa --------- ene

I i IN 44'.S Al 150 pf.c;E:sAl VI9.I' V116TS

• ______________________________________5—________________________ 55-----------

S I E.M/ 7531) 9 • lEN ! 2 0 6. Si I b 1 ON 24 .('OO 75.1 01 I • 346U

• I • / 75' 1 . 34 ill 2.1 t4!' 24M.614 35',. Oil 2.1 POIJ ! I '. -101,I S I S I I I• ---------------------------------------------------as -----------_____ --------

vn I djLUS 41 75 1(PKS

Al' I V. T = i 4) . 6 ''A

I I I I I I

!SlM/ 75301 12.31 1 1H2.21 1 11 • 0 1 11 .1 1 12.54 111.1./ 7S01 12.20 1 11 .s4 It .1 12.50 12.66II I I I I *• as----------

7 1 1 N 'Wi S Al -'IS flVG1F F SAT I?.I:?0.()MA

I 1 1 1 1 1ISIFM/ 75301 11 .Th 1414 Q AIu.'? 1 11 .4h 11.49

ORIGINAL PAGE

OCA RELIABILITY LABORATORY OF POOR QUAII1Y3-2

Page 13: JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort

DCA P I. 14 L t,1 Ti l.A)i4A I t)k

PAk.I IiIIMh.i. :1N759

• __e e.. e aeaaaa. aneeeeee aefl•1

VEil) / DC I ML.A1' I STD. 0rV.I i.nv4 Pi l 90% PT I HIGH PT.

S S I I I I I• 50eeeseesefleseseeaeeesasasaaa esesS SneflSfleee•

vzI IN VOLTS Al 125 I)E(;F:EsAT I'fl0.0 1A

• SsaeeSea afleeeena•I I I I I I I IIS1M/ 1510! 12.71 O• 9M I 12.33 1 12.39 1 13,03 1 13.17I1'. J./ 75O,! 12.80 1 2w). 2 P* I 12.42 1 32.4 I 13.08I I I II I I• - --s_ - ass--------- ee-------Se SflasaeesSea .e ee•

VZ2 IN VOLTS AT 25 IH,PEE:s

AT lzi'=35.t A

• __________e__ s__a_S_S -----------___________e __________ ___------____a___ .I I I I I I IIS1EM/ 15301 12.70 1 201.4M 1 12.22 12.34 1 12.9h 13.0011.1.1 750oI 12.57 259.44 1 12.01 b 1 12.19 12.83 33.21I I I I I I I I• SSSSe S5a_aSa_a --------_aSeeSCaSeSe•

V72 IN VULU Al -t5 I'.G1ESAT 1Y135. 1) A

• ease__Sass----- - ----------------------------- -------- ..s.Csss_a-----------I I I I I I IIS I EM/ 75 301 11. SU 1 1 h7 • I II • 1') 1 I 1.2 1 11 • 71 11.7611.1.! 7bOe,I 11.43 2)4.2A 11.1)5 11.10 1 11.70 11.49I-----------

172 iii Vffl;1S AT 175 DF.(*.P,ESAT IZI : 35,() OA

• --------------------------------------as-------------------------------------.1 1 3 1 1 1 1 1!S1 p:M, 75301 1.0t 1 3.0: 1 t?.hl 12.67 13.32 13.3611.1./ 15061 13.1? 1 265.4 I 17.69 I 12.) 1 13.50 1 1I I I I ----------------------- I I I

7 . I IN U's A 25 1) V C R p iAT Ii'o.() 14A

1 1 1 1 1 11S1F.M/ 75301 4.15'4 I 945.0 I I .00 I 2.00 I 5.400I t. 30011.1./ /SOt-I 1.141 1 hfl,I)'i 73',.OX, I 1.770 1• I I I I I I• ----------------------------------------------------------------------------------

rr'I r'r, lAflIl IV I ApflnArIV

Page 14: JAN TRANSISTOR AND DIODE CHAR RIZATION TEST PROGRAM … · 2013-08-31 · AS1-CR-150670) 3AX IRANSISTOE AD DIODE N18-222'i7 CHARACTE1IZATICN TEST 1bCGA: JflTX DICCE 1W7591 Final Reçort

OCA PILJAP1L . ITY L.AI,UPATORY

PART KIJMI4IR :If759

• eeeeeefleeeeeeeee e-____aeflep. _2 1 1 1 1!V.fdD , DC MEAN 8109 VEV S I LOA ?T 1 10% Vt 1 90% PT I HIU PT.• _____ S S S I I• eOee __—ee__e_Se e eeseaeOeeeeflSeeee annaea-

U, iPi QeiPIS AT 25 flI'(diEESAT IZ :0.25 PIA

• qSfl eeneae_p0e s__s SeeS se eee - ee - -fle. - -I I I I I I I151PM! 7530! 40.4U Al.to I 5.000 1 1.000 1 7R.00 2 154.6IT.!.! lSOe. 21.56 I 4.23 1 3.000 1 3.000 1 97.00 1 153.0• S S S S S I• eeseeeee__-..._ee Sq-----ee —e —sessnee - _-_q -

U — J —C IN OFLGIW AT 100 DEGREES(JUNCTION TO CASE)

• see_sen eae.eee - _ne ese 50 _e eeeq_ -I I I I I I I!SIP*! 7530! 136.5 1 6.42 1 125.7 1 127.5 2 145.6 1 141.0IT.!.! 7506! 143.4 1 3.4uu 1 133.3 1 H4.4 1 147.6 1 150.3• I I I I I S• -- -------aeeeee —S ___________ ______

ORIGINAL PAGE 13

OF POOR QIJAUTY

OCA RELIABILITY LABORATORY 3-4