diyot-diode-ideal diode
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Transcript of diyot-diode-ideal diode
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7/30/2019 diyot-diode-ideal diode
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FIGURE 1-1 Ideal diode: (a) symbol; (b) characteristics.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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7/30/2019 diyot-diode-ideal diode
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FIGURE 1-2 (a) Conduction and (b) nonconduction states of the ideal diode as determined by the applied bias.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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7/30/2019 diyot-diode-ideal diode
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FIGURE 1-6 Atomic structure: (a) germanium; (b) silicon.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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7/30/2019 diyot-diode-ideal diode
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FIGURE 1-7 Covalent bonding of the silicon atom.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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7/30/2019 diyot-diode-ideal diode
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FIGURE 1-8a Energy levels: discrete levels in isolated atomic structures.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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7/30/2019 diyot-diode-ideal diode
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FIGURE 1-8b Energy levels: conduction and valence bands of an insulator; semiconductor; and conductor.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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7/30/2019 diyot-diode-ideal diode
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FIGURE 1-9 Antimony impurity in n-type material.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-10 Effect of donor impurities on the energy band structure.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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7/30/2019 diyot-diode-ideal diode
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FIGURE 1-11 Boron impurity inp-type material.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-12 Electron versus hole flow.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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7/30/2019 diyot-diode-ideal diode
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FIGURE 1-13 (a) n-type material; (b)p-type material.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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7/30/2019 diyot-diode-ideal diode
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FIGURE 1-14 p-njunction with no external bias.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-15 No-bias conditions for a semiconductor diode.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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7/30/2019 diyot-diode-ideal diode
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FIGURE 1-16 Reverse-biasedp-njunction.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-17 Reverse-bias conditions for a semiconductor diode.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-18 Forward-biasedp-njunction.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-19 Silicon semiconductor diode characteristics.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-21 Forward-bias conditions for a semiconductor diode.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-22 Zener region.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-23 Comparison of Si and Ge semiconductor diodes.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-24 Variation in diode characteristics with temperature change.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-30 Determining the dc resistance of a diode at a particular operating point.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-31 Example 1.1.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-32 Defining the dynamic or ac resistance.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-33 Determining the ac resistance at a Q-point.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-34 Example 1.2.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-35 Determining the average ac resistance between indicated limits.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-36 Defining the piecewise-linear equivalent circuit using straight-line segments to approximate the characteristic curve.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-37 Components of the piecewise-linear equivalent circuit.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-38 Simplified equivalent circuit for the silicon semiconductor diode.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-39 Ideal diode and its characteristics.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-52 Reviewing the Zener region.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-53 Conduction direction: (a) Zener diode; (b) semiconductor diode.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.
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FIGURE 1-54 Zener equivalent circuit: (a) complete; (b) approximate.
Robert L. Boylestad and Louis Nashelsky
Electronic Devices and Circuit Theory, 8eCopyright 2002 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458
All rights reserved.