ISTC project # 3857

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The two pulses two wavelength driver of EUV radiation LPP source and of 4M Bragg mirror objective for laboratory EUV Lithography tool: Development of the ISTC project #3857 R.Seisyan, A.Zhevlakov, M.Sasin. - PowerPoint PPT Presentation

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  • The two pulses two wavelength driver of EUV radiation LPP source and of 4M Bragg mirror objective for laboratory EUV Lithography tool:Development of the ISTC project #3857

    R.Seisyan, A.Zhevlakov, M.SasinA.F.Ioffe Physical Technical Institute of Russian Academy of Sciences, St.-Petersburg, Russia e-mail: rseis@ffm.ioffe.ru

  • ISTC project # 3857Key Technologies of EUV-nanolithography System of Super high Resolution on the Base of High Effective LPP Source

    February 2009 February 2012

    Project Budget 317,501 = $492,700

    executors:Ioffe InstituteandInstitute for Laser Physics,both Saint-Petersburg, Russia

  • Collaborators of the Project

    Gerry OSullivan,John Costello,Torsten Feigl,Peter Choi,Ladislav Pina,

    all COST MP0601 participants

  • ISTC project #3857,the first year Work PlanCalculation and design of dual-wavelength ( = 1.06m and = 10.6 m) laser- optical scheme forming focal spot on the target at double-pulse illumination.

    Calculation and design of 4-mirror wide-aperture imaging objective with enlarged image area.

    Precise mechanical and optical systems development providing for nanometric scale precision for adjustment and focusing of nanolithographer optical system.

    Placing of the optical and mechanical systems in existing body of NL tool, designed and partly manufactured in the frame of ISTC project #0991.

  • Scheme of EN, designed in the frame of ISTC project #0991LensCollectorPlasmFirst MirrorCorrectionMirrorMaskSecond Objective MirrorFirst Objective MirrorSampleScreenEUV SpectrographEUV Detector & FilterCoupling system

  • Experimental nanolithographerof Ioffe Institute in the making (2006)

  • View of the experimental hall with the dustless room (center and right) and prototype excimer laser (on the left) used in the Experimental Stand work

  • The main ideas of the industrial EUV LPP sourceThe main ideas used in the SYMER source (as well as in GIGAPHOTON source) are the following.Target material should be Sn (liquid Sn droplets)The main primary laser should be pulsed powerful (about 15-20kW) CO2 laserThe main ways to solve debris mitigation problem are the use of magnetic field and The use of inert gas curtain

  • Advanced LPP source for NL tool

  • Cross-section of string source

  • Collector mirrorMagnetsString target unitThe String EUV Source cross-section To an objective, samples, etc..String

  • CapillaryString covered with tinGas pulse for debris mitigationIonised Tin, cold plasmaUV laser pulse10 laser pulse: heatingHot, radiating EUV plasmaString EUV target with different laser wavelength ignition and heating

  • YAG:Nd+3 , 1064 nm1.5 J, 8 ns, 10 HzOptical delay line, 1-200 ns2-nd harmonic generatorOptical parametrical oscillatorH2 cellCO2 laserObjective10 mmObjective1064 nm1064 nm532 nm1930 nm10 mmFormer design of dual-wavelength ( = 1.06m and = 10.6 m) laser-optical scheme forming focal spot on the target at double-pulse illumination.

  • Resulting dual-wavelength ( = 1.06m and = 10.6 m) laser-optical scheme forming focal spot on the target at double-pulse illumination

  • Calculation of CO2 laser driverPossible amplification of 6 pass CO2 laser driver (1ns initial pulse)

  • Multipass scheme of CO2 amplifierMultipass scheme for amplifier based on CO2 laser Fialka

  • Experimental Lithographer (EN) made in Ioffe Institute

  • Scheme of ENLensCollectorPlasmFirst MirrorCorrectionMirrorMaskSecond Objective MirrorFirst Objective MirrorSampleScreenEUV SpectrographEUV Detector & FilterCoupling system

  • EN optical schemeLensCollectorPlasmFirst MirrorCorrectionMirrorMaskSecond Objective MirrorFirst Objective MirrorSampleScreenEUV SpectrographEUV Detector & Filter99.91256.2 mmCoupling system

  • Bragg mirror imaging systems with high resolution NA=0,06 0,09NA=0,1 0,14NA=0,36NA=0,485

  • Image modelingL&S 30 nm, contrast 60%L&S 45 nm, contrast 97% L&S 15 nm, contrast 58%

  • Four mirror objective Results of mathematical modeling of microstructures.The image of corners with width of a line 10nm in the centre of a field

  • The specification of the objective

  • *Scheme of nanolithographLensCollectorPlasmFirst MirrorCorrectionMirrorMaskSecond Objective MirrorFirst Objective MirrorSampleEUV SpectrographEUV Detector & FilterCoupling systemThird Objective MirrorFourth Objective Mirror

  • Principal scheme of focusing and alignment systemGrating pattern must be such that suppress the second order of diffraction.

  • An original technology for photomask production is developed in the Ioffe Institute for the EN. It includes originally invented mask pattern and construction, and technologies for deposition both reflecting and absorbing structures on the mask surface. The focusing and alignment systems represent by itself multichannel interferometers using gratings and second harmonics solid state laser projection device.

  • Scheme of the focusing system realization

  • Vibroprotective table The EN modules are installed on massive granite plate of vibroprotective table. The table has been invented in the Baltic University (St. Petersburg) and later finished off in conformity with the EN needs. The table has high performance characteristics and provides both passive and active vibroprotection including infralow frequencies.

  • Piezopositioners

  • Phenomenological modelof the non-linear photoresist

  • Estimated parameters of inorganic nonlinear photoresistsSensitivity: C = 310-3 cm3/J,threshold intensity: Ith = 1.7104 W/cm2,threshold diffusion width: = 8.5103 W/cm2.Dose of H = h/C = 1.7 mJ/cm2 is sufficient for exposure of a photoresist specimen h=50-nm thick. Pulse threshold dose (at 20 ns) is Hth = Ith = 0.34 mJ/cm2.Thus, the necessary dose is accumulated with 5 pulses at the threshold intensity and 20 ns pulse duration.

  • Computer simulation of the enhancement of the contrast by means of inorganic non-linear photoresist

  • Experiments on the EUV exposure have been carried out with synchrotron 13.4nm emission and, in a tentative form, on the Experimental Stand, the auxiliary setup of the Ioffe Institute, for = (13.4 0.3) nm.The results obtained suggest that the EUV sensitivity should be some lower than that at = 193 nm.As2S3 films exposed on the synchrotron, after the chemical development, demonstrated distinct interferention structure with 30-40 nm stripes and space-stripe period about 50-100 nm thereby confirming good resolution ability of the material.

  • QDC(quantum dot crystal)Interference transistorSingle-electron transistorQD semiconductor laser DFB Laser systems Mesoscopic elementsPhoton crystals