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Transcript of Deuterium retention in tungsten irradiated by heavy … M. Sakamoto et al . 3rd RCM of CRP on...
Deuterium retention in tungsten irradiated by heavy ions
M. Sakamoto, H. Tanaka, S. Ino, H. Watanabe1, M. Tokitani2
3rd RCM of CRP on Irradiated TungstenIAEA Headquarters, Vienna, Austria
27-30 June 2017
Plasma Research Center, University of Tsukuba, Tsukuba, Japan1 RIAM, Kyushu University, Kasuga, Fukuoka, Japan2 National Institute for Fusion Science, Toki, Gifu, Japan
Contents
M. Sakamoto et al . 3rd RCM of CRP on Irradiated Tungsten, IAEA, Vienna, 28 June 2017 2
Main objective of this study Experimental set up Tungsten sample (TEM observation) Effect of heavy ion irradiation on retention in W
Damage level dependence Flux dependence Sample temperature dependence Simulation results
Summary
Main objective of this studyTo understand the effect of neutron and surrogateirradiation upon microstructure of tungsten and
To understand the effect of the damage of tungsten onhydrogen isotope retention through the observation ofchange in the microstructure
In the last CRP held in Soul, I presented D retention in Wexposed to He plasma in addition to preliminary results ofD retention in W irradiated by heavy ions.
Experimental setup: Cu2+ Irradiation
M. Sakamoto et al. . 3rd RCM of CRP on Irradiated Tungsten, IAEA, Vienna, 28 June 2017 4
Tandetron Accelerator (Kyushu Univ.)Ion: Cu2+
Energy: 2.4 MeVFlux: up to 5 x 1015 Cu2+/m2 sDamage level: up to 4 dpa (max: > 100 dpa)Sample Temp.: up to 873 KExposure area: 8 mmφ
Estimated depth profile of displace-ment damage in W.
Calculation using the SRIM code with displacement energy of 55 eV.
The peak damage region is ~400 nm.10-3
10-2
10-1
100
101
0 200 400 600 800 1000 1200
dpa
Depth (nm)
4 dpa
0.4 dpa
0.1 dpa
0.01 dpa
Heating stage
Experimental setup: Deuterium Irradiation
APSEDAS (PRC, Univ. of Tsukuba) Plasma is produced by RF (13.56 MHz) wave
power (< 5kW, typical: 800 W steady state).==> No electrode, No impurity such as carbon,
Clean environment Magnetic field: < 0.05 T Water cooled sample stage Plasma diameter: ~50 mm Exposure area: φ 8 mm (uniform exposure)
Water-cooled sample holder
φ 50
W sample
φ 8
M. Sakamoto et al . 3rd RCM of CRP on Irradiated Tungsten, IAEA, Vienna, 28 June 2017 5
Plasma exposures have been performed using a compact PWI simulator APSEDAS.
Examined Materials
M. Sakamoto et al . 3rd RCM of CRP on Irradiated Tungsten, IAEA, Vienna, 28 June 2017 6
Base Materials: 1mm-thick tungsten disc (99.99% pure, A.L.M.T. corp.)
• Annealed at ~ 2000 oC for 1 h (Re-crystallized)• The surface was mechanically polished to a mirror finish.
The grain size is in the range of 10 µm to ~100 µm.
100 µm 10 µm
Damage evolution by 2.4 MeV Cu2+ irradiation
M. Sakamoto et al. 3rd RCM of CRP on Irradiated Tungsten, IAEA, Vienna, 28 June 2017 7
Nano-voids (d<1nm) are observed in 1 dpa case and they formed densely.
Most of interstitial loops (IL) is considered to be nucleated by cascade collisions,since the density of ILs was two order of magnitude higher than the estimated valueusing a rate theory assuming that the two free interstitials act as nuclei for ILs..
Each IL can not grow larger individually but additional loops were formed in thevicinity of pre-existing dislocation loops and dislocations and aligned to coalescewith each other.
1.0 dpa 1.0 dpa
Irradiation at room temp.
Experimental Procedure
M. Sakamoto et al . 3rd RCM of CRP on Irradiated Tungsten, IAEA, Vienna, 28 June 2017 8
1mm-thick tungsten discs (99.99% pure, A.L.M.T. corp.)
Annealed at ~2000 oC for 1 h (Re-crystallized)
D plasma irradiation
2.4 MeV Cu2+ irradiation
TDS measurement
Electron density (m-3) 2.7 x 1017
Electron temp. (eV) 10
Space potential (V) 30
Flux (m-2 s-1) 3.7 x 1021
Fluence (m-2) 2.0 x 1025
Surface temp. (K) 480
(1) dpa dependence: 0.01 ~ 4 dpa
(2) flux dependence: 1 ~ 5 x 1015 Cu2+/m2 s
(3) sample temperature: RT, 500 K, 873 K
Damage level dependence of TDS Spectrum
M. Sakamoto et al. 2nd RCM of CRP on Irradiated Tungsten, SNU, Korea 8 Sep. 2015 9
There is three main peaks in thespectra: ~620 K, ~760 K and ~860K.
Temperatures at 1st and 2nd peaks arethe same as those of non-irradiated W.
The 3rd peak newly appears due to 2.4MeV Cu2+ irradiation and is consideredto be caused by vacancy clusters andvoids.
Retention in the damaged W increaseswith the damage level but it saturatesaround 0.4 dpa, suggesting that newlyintroduced defects may be cancelled byalready existing vacancies and voidswith high density.
0
1
2
3
4
5
6
7
0 dpa (x10)0.1 dpa0.4 dpa4 dpa
300 400 500 600 700 800 900 1000
Des
orpt
ion
rate
(1018
D/m
2 s)
Temperature (K)
dpa 0 dpa 0.1 dpa 0.4 dpa 4 dpa
Peak 1 613 600 624 634
Peak 2 759 761 770 765
Peak 3 861 858 863
5 x 1015 Cu2+/m2 s
Flux dependence of TDS Spectrum
M. Sakamoto et al. 2nd RCM of CRP on Irradiated Tungsten, SNU, Korea 8 Sep. 2015 10
Comparison between high and low fluxesof Cu2+ ions indicates that D retention inW irradiated with low flux Cu2+ ionsbecomes 3.5 times lower than that forhigh flux irradiation.
The desorption spectrum of the low fluxirradiation also consists of three stages ofdesorption.
The temperatures at the three peaks forthe low flux case became lower thanthose of the high flux irradiation.
0
1
2
3
4
5
6
7
5 x 1015 m-2 s-1
1 x 1015 m-2 s-1
300 400 500 600 700 800 900 1000
Des
orpt
ion
rate
(1018
D m
-2 s
-1)
Temperature (K)
High flux
Low flux
0.4 dpa
Comparison between high and low fluxes of Cu2+ ions
Flux 1 x 1015 m-2s-1 5 x 1015 m-2s-1
Peak 1 553 K 624 K
Peak 2 724 K 770 K
Peak 3 825 K 858 K
Comparison of dpa dependence between high and low irradiation fluxes
M. Sakamoto et al. 2nd RCM of CRP on Irradiated Tungsten, SNU, Korea 8 Sep. 2015 11
In the case of high flux irradiation, D retention increases with the damage level butit saturates around 0.4 dpa.
This suggests that newly introduced defects are cancelled by already existingvacancies and voids with high density.
In the case of low flux irradiation, D retention increases with the damage level up to2 dpa and no saturation is observed.
It is found that defect formation due to heavy ion irradiation depends on not only adamage level but also flux of the high energy ions.
Simulation of TDS spectra using an HIDT code
M. Sakamoto et al. 2nd RCM of CRP on Irradiated Tungsten, SNU, Korea 8 Sep. 2015 12
0
1
2
3
4
300 400 500 600 700 800 900 1000
Des
orpt
ion
rate
(1018
D/m
2 s)
Temperature (K)
The HIDT (Hydrogen Isotope Diffusion and Trapping) code has been developed in Shizuoka Univ.
(ref: Y. Oya et al., JNM 461 (2015) 336.) Input parameters:
D = 2.9 x 10-7 m2/s (Frauenfelder)Kr = 3.0 x 10-25 m4/s (Pick)
Time evolution of sample temperature and D ion flux for the simulation was the same as those of the experiments.
A depth profile of defect concentration is similar figure to the dpa profile calculated by the SRIM code.
0
200
400
600
800
1000
0
1 1021
2 1021
3 1021
4 1021
5 1021
0 5000 10000 15000 20000
T(K)
Imp(atom/m2/s)
Temp
eratu
re (K
) Imp(atom/m2/s)
t(s)
Plasma
Sample temperature
D ion flux
TDSMove to TDS system
Exp. Data 0.1 dpa (high flux)
Sample temperature & D ion flux vs time
0
0.002
0.004
0.006
0.008
0.01
10-11 10-10 10-9 10-8 10-7 10-6 10-5 10-4 0.001
T1 (0.83 eV)T2 (1.22 eV)T3 (1.46 eV)
Depth (m)
Con
cent
ratio
n (a
tom
-1)
Defect concentration of each binding energy
Simulation of TDS spectra using an HIDT code
M. Sakamoto et al. 2nd RCM of CRP on Irradiated Tungsten, SNU, Korea 8 Sep. 2015 13
0
1
2
3
4
300 400 500 600 700 800 900 1000
Simulation0.83 eV1.22 eV1.46 eVExperiment
Des
orpt
ion
rate
(1018
D/m
2 s)
Temperature (K)
The HIDT (Hydrogen Isotope Diffusion and Trapping) code has been developed in Shizuoka Univ.
(ref: Y. Oya et al., JNM 461 (2015) 336.) Input parameters:
D = 2.9 x 10-7 m2/s (Frauenfelder)Kr = 3.0 x 10-25 m4/s (Pick)
Time evolution of sample temperature and D ion flux for the simulation was the same as those of the experiments.
A depth profile of defect concentration is similar figure to the dpa profile calculated by the SRIM code.
0
200
400
600
800
1000
0
1 1021
2 1021
3 1021
4 1021
5 1021
0 5000 10000 15000 20000
T(K)
Imp(atom/m2/s)
Temp
eratu
re (K
) Imp(atom/m2/s)
t(s)
Plasma
Sample temperature
D ion flux
TDSMove to TDS system
Sample temperature & D ion flux vs time
0
0.002
0.004
0.006
0.008
0.01
10-11 10-10 10-9 10-8 10-7 10-6 10-5 10-4 0.001
T1 (0.83 eV)T2 (1.22 eV)T3 (1.46 eV)
Depth (m)
Con
cent
ratio
n (a
tom
-1)
Defect concentration of each binding energy
Well reproduced
Simulation of TDS spectra using an HIDT code
M. Sakamoto et al. 2nd RCM of CRP on Irradiated Tungsten, SNU, Korea 8 Sep. 2015 14
0
1
2
3
4
300 400 500 600 700 800 900 1000
Simulation0.83 eV1.22 eV1.46 eVExperiment
Des
orpt
ion
rate
(1018
D/m
2 s)
Temperature (K)
The HIDT (Hydrogen Isotope Diffusion and Trapping) code has been developed in Shizuoka Univ.
(ref: Y. Oya et al., JNM 461 (2015) 336.) Input parameters:
D = 2.9 x 10-7 m2/s (Frauenfelder)Kr = 3.0 x 10-25 m4/s (Pick)
Time evolution of sample temperature and D ion flux for the simulation was the same as those of the experiments.
A depth profile of defect concentration is similar figure to the dpa profile calculated by the SRIM code.
Well reproduced
PeakBindingenergy
Corresponding defects
1st 0.83 eV dislocation loops & grain boundary
2nd 1.22 eV vacancy
3rd 1.46 eV vacancy cluster & void
Simulation of TDS spectra using an HIDT code
M. Sakamoto et al. 2nd RCM of CRP on Irradiated Tungsten, SNU, Korea 8 Sep. 2015 15
High ion flux
Low ion flux
0
2
4
6
8
0 1 2 3 4
5 x 1015m-2s-1
1 x 1015m-2s-1
Ret
entio
n (1
020 D
/m2 )
Desorption stage
72%33%
84%
D retention in the 2nd stage (i.e. vacancy) significantly decreased with decrease in ion flux (i.e. dpa rate), while D retention in 3rd
stage decreased not so much.
Vacancy
Dislocation Viod
High dpa rate: vacancies may be remained.Low dpa rate: voids may be produced.
Speculation
Dependence of D retention on sample temperature druing Cu2+ ion irradiation
M. Sakamoto et al. 2nd RCM of CRP on Irradiated Tungsten, SNU, Korea 8 Sep. 2015 16
Cu2+ irradiation was carried out at the sampletemperature of RT, 500 K and 873 K.
Desorption rate decreased as a whole with thesample temperature during the irradiation.
For the sample temperature of 500K, 873 K, Dretention decreased by 60 % and 80 %,respectively.
0.0
0.5
1.0
1.5
2.0
300 400 500 600 700 800 900
D re
tent
ion
(1021
D/m
2 )
Sample temperature (K)
0
1
2
3
4
5
6
7
300 400 500 600 700 800 900 1000
4dpa/RT4dpa/500K4dpa/873K
Temperature (K)
Des
orpt
ion
rate
(1018
D/m
2 s) Cu2+ ion flux: 5×1015 m-2s-1
Two possible candidates1. Interstitial and vacancy may annihilate each
other with increase in the sample temperature.
2. At the sample temperature of 873 K,Interstitials may escape to grain boundary andremained vacancies coalesce to become void.
QuestionWhich is dominant for D retention, large number of vacancies or smaller number but bigger voids?
Summary
M. Sakamoto et al. 2nd RCM of CRP on Irradiated Tungsten, SNU, Korea 8 Sep. 2015 17
Deuterium retention in tungsten (W) samples irradiated by 2.4 MeVCu2+ ions hasbeen investigated to study effects of the damage on hydrogen isotope retention in W.
Most of the dislocation loops (ILs) were nucleated by cascade collisions. Additional loops were formed in the vicinity of pre-existing dislocation loops
and dislocations and aligned to coalesce with each other. Nano-voids (d<1nm) are observed in 1 dpa case and they formed densely.
TEM observation
There exists three desorption peaks in the TDS spectra . The desorptionpeak around 850 K newly appeared due to Cu2+ ions irradiation. This peakmust be related to voids.
Flux and damage level dependences
TDS spectra
When the Cu2+ ion flux decreased by 5 times, the D retention decreased by3.5 times, indicating clear flux dependence.
In the case of higher ion flux, D retention increases with the damage levelbut it saturates around 0.4 dpa, suggesting that newly introduced defectsmay be cancelled by already existing vacancies and voids with high density.
Summary (continued)
M. Sakamoto et al. 2nd RCM of CRP on Irradiated Tungsten, SNU, Korea 8 Sep. 2015 18
On the other hand, In the case of low flux irradiation, D retention increaseswith the damage level up to 2 dpa and no saturation is observed.
Flux and damage level dependences
Sample temperature dependence Desorption rate decreased as a whole with the sample temperature during
the irradiation.
Simulation using the HIDT code
TDS spectrum was reproduced by using the HIDT code using experimentaldata. The binding energies of three desorption peaks are 0.83 eV, 1.22 eVand 1.46 eV.
It is necessary to know effects of the number of defects and their size on D retention. It is planed to measure TEM using samples which have irradiated at different sample temperature.
High dpa rate: vacancies may be remained.Low dpa rate: voids may be produced.
Speculation