Cree C2M0280120D Silicon Carbide Power MOSFET · 1 C2M0280120D Rev - C2M0280120D Silicon Carbide...
Transcript of Cree C2M0280120D Silicon Carbide Power MOSFET · 1 C2M0280120D Rev - C2M0280120D Silicon Carbide...
1 C2M0280120D Rev -
C2M0280120DSilicon Carbide Power MOSFET Z-FET
TM MOSFET
N-Channel Enhancement Mode Features
• High Speed Switching with Low Capacitances• High Blocking Voltage with Low RDS(on)• Easy to Parallel and Simple to Drive• Resistant to Latch-Up• Halogen Free, RoHS Compliant
Benefits
• HigherSystemEfficiency• Increased System Switching Frequency• Reduced Cooling Requirements• Increased System Reliability
Applications
• Lighting • High Voltage DC/DC Converters• Switch Mode Power Supplies• HVAC
Package
TO-247-3
Part Number Package
C2M0280120D TO-247-3
VDS 1200 V
ID @ 25˚C 10 A
RDS(on) 280 mΩ
Maximum Ratings (TC=25˚Cunlessotherwisespecified)
Symbol Parameter Value Unit Test Conditions Note
IDS (DC) Continuous Drain Current10
AVGS = 20 V, TC = 25 °C
Fig. 196 VGS = 20 V, TC = 100 °C
IDS (pulse) Pulsed Drain Current 20 A Pulse width tP limited by Tjmax
TC = 25 °CFig. 22
VGS Gate Source Voltage -10/+25 V
Ptot Power Dissipation 62.5 W TC=25 °C, TJ = 150 °C Fig. 20
TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C
TL Solder Temperature 260 ˚C 1.6 mm (0.063”) from case for 10s
Md Mounting Torque 18.8
Nmlbf-in M3 or 6-32 screw
2 C2M0280120D Rev -
Electrical Characteristics (TC=25˚Cunlessotherwisespecified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions NoteV(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID=50μA
VGS(th) Gate Threshold Voltage2.4 2.8 V VDS = 10 V, ID = 1.25mA
Fig. 111.8 2.1 V VDS = 10 V, ID = 1.25mA,
TJ = 150 °C
IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V
IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V
RDS(on) Drain-Source On-State Resistance280 370
mΩVGS = 20 V, ID = 6 A Fig.
4,5,6530 650 VGS = 20 V, ID = 6 A, TJ = 150 °C
gfs Transconductance2.8
SVDS= 20 V, IDS= 6 A
Fig. 72.4 VDS= 20 V, IDS= 6 A, TJ = 150 °C
Ciss Input Capacitance 259
pFVGS = 0 V
VDS = 1000 V
f = 1 MHzVAC = 25 mV
Fig. 17,18Coss Output Capacitance 23
Crss Reverse Transfer Capacitance 3
Eoss Coss Stored Energy 12.5 μJ Fig 16
td(on) Turn-On Delay Time 5.2
ns
VDD = 800 V, VGS = -5/20 VID = 6 A,RG(ext)=2.5Ω,RL=133ΩTiming relative to VDS Per IEC60747-8-4 pg 83
Fig. 27tr Rise Time 7.6
td(off) Turn-Off Delay Time 10.8
tf Fall Time 9.9
EON Turn-On Switching Loss 32μJ
VDS = 800 V, VGS = -5/20 V,ID = 6A, RG(ext) =2.5Ω,L=412μH
Fig. 25EOFF Turn Off Switching Loss 37
RG Internal Gate Resistance 11.4 Ω f = 1 MHz, VAC = 25 mV, ESR of CISS
Built-in SiC Body Diode Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VSD Diode Forward Voltage4.1 V VGS = - 5 V, ISD = 3 A, TJ = 25 °C
Note 13.7 V VGS = - 5 V, ISD = 3 A, TJ = 150 °C
trr Reverse Recovery time 23.8 ns VGS = - 5 V, ISD = 6 A TJ = 25 °CVR = 800 Vdif/dt = 1000 A/µs
Note 1Qrr Reverse Recovery Charge 70 nC
Irrm Peak Reverse Recovery Current 4.1 A
Note (1): When using SiC Body Diode the maximum recommended VGS = -5V
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 1.8 2.0°C/W
Fig. 21
RθJC Thermal Resistance from Junction to Ambient 40
Gate Charge Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
Qgs Gate to Source Charge 5.6
nCVDS = 800 V, VGS = -5/20 VID = 6 APer IEC60747-8-4 pg 21
Fig. 12Qgd Gate to Drain Charge 7.6
Qg Gate Charge Total 20.4
3 C2M0280120D Rev -
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
On R
esist
ance
, RDS
On
(P.U
.)
Junction Temperature, TJ (°C)
Conditions:IDS = 6 AVGS = 20 Vtp < 200 µs
0
2
4
6
8
10
12
14
16
0.0 2.5 5.0 7.5 10.0 12.5
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (V)
Conditions:TJ = 150 °Ctp < 200 µs
VGS = 20 V
VGS = 10 V
VGS = 18 V
VGS = 16 VVGS = 14 V
VGS = 12 V
0
2
4
6
8
10
12
14
16
0.0 2.5 5.0 7.5 10.0 12.5
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (V)
Conditions:TJ = -55 °Ctp < 200 µs
VGS = 20 V
VGS = 10 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
VGS = 12 V
0
2
4
6
8
10
12
14
16
0.0 2.5 5.0 7.5 10.0 12.5
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (V)
Conditions:TJ = 25 °Ctp < 200 µs
VGS = 20 V
VGS = 10 V
VGS = 18 V
VGS = 16 VVGS = 14 V
VGS = 12 V
Figure 2. Typical Output Characteristics TJ = 25 °C
Typical Performance
Figure 1. Typical Output Characteristics TJ = -55 °C
0
100
200
300
400
500
600
700
800
0 2 4 6 8 10 12 14
On R
esist
ance
, RDS
On
(mOh
ms)
Drain-Source Current, IDS (A)
Conditions:VGS = 20 Vtp < 200 µs
TJ = 150 °C
TJ = -55 °C
TJ = 25 °C
0
100
200
300
400
500
600
700
-50 -25 0 25 50 75 100 125 150
On R
esist
ance
, RDS
On
(mOh
ms)
Junction Temperature, TJ (°C)
Conditions:IDS = 6 Atp < 200 µs
VGS = 20 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
Figure 3. Typical Output Characteristics TJ = 150 °C Figure 4. Normalized On-Resistance vs. Temperature
Figure 6. On-Resistance vs. Temperature For Various Gate Voltage
Figure 5. On-Resistance vs. Drain CurrentFor Various Temperatures
4 C2M0280120D Rev -
Typical Performance
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 10 12 14
Drai
n-So
urce
Cur
rent
, IDS
(A)
Gate-Source Voltage, VGS (V)
Conditions:VDS = 20 Vtp < 200 µs
TJ = 150 °C
TJ = -55 °C
TJ = 25 °C
-16
-14
-12
-10
-8
-6
-4
-2
0-6 -5 -4 -3 -2 -1 0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (A)
VGS = 0 V
VGS = -2 V
VGS = -5 VCondition:TJ = -55 °Ctp < 200 µs
-16
-14
-12
-10
-8
-6
-4
-2
0-6 -5 -4 -3 -2 -1 0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (A)
VGS = 0 V
VGS = -2 V
VGS = -5 V
Condition:TJ = 25 °Ctp < 200 µs
-16
-14
-12
-10
-8
-6
-4
-2
0-6 -5 -4 -3 -2 -1 0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (A)
VGS = 0 V
VGS = -2 V
VGS = -5 VCondition:TJ = 150 °Ctp < 200 µs
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 -25 0 25 50 75 100 125 150
Thre
shol
d Vo
ltage
, Vth
(V)
Junction Temperature TJ (°C)
ConditonsVDS = 10 VIDS = 1.25 mA
Typ
Min
-5
0
5
10
15
20
25
0 5 10 15 20 25
Gate
-Sou
rce V
olta
ge, V
GS
(V)
Gate Charge, QG (nC)
Conditions:IDS = 6 AIGS = 100 mAVDS = 800 VTJ = 25 °C
Figure 7. Typical Transfer CharacteristicFor Various Temperatures
Figure 8. Typical Body Diode Characteristic TJ = -55 ºC
Figure 9. Typical Body Diode Characteristic TJ = 25 ºC
Figure 10. Typical Body Diode CharacteristicTJ = 150 ºC
Figure 11. Typical and Minimum Threshold Voltage vs. Temperature Figure 12. Typical Gate Charge Characteristic 25 ºC
5 C2M0280120D Rev -
1
10
100
1000
0 50 100 150 200
Capa
cita
nce
(pF)
Drain-Source Voltage, VDS (V)
Ciss
Coss
Conditions:TJ = 25 °CVAC = 25 mVf = 1 MHz
Crss
Typical Performance
-16
-14
-12
-10
-8
-6
-4
-2
0-6 -5 -4 -3 -2 -1 0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (V)
Conditions:TJ = -55 °Ctp < 200 µs
VGS = 0 VVGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
-16
-14
-12
-10
-8
-6
-4
-2
0-6 -5 -4 -3 -2 -1 0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (V)
Conditions:TJ = 25 °Ctp < 200 µs
VGS = 0 VVGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
-16
-14
-12
-10
-8
-6
-4
-2
0-6 -5 -4 -3 -2 -1 0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (V)
Conditions:TJ = 150 °Ctp < 200 µs
VGS = 0 V VGS = 5 V
VGS = 10 VVGS = 15 V
VGS = 20 V
0
2
4
6
8
10
12
14
0 200 400 600 800 1000 1200
Stor
ed En
ergy
, EO
SS(µ
J)
Drain to Source Voltage, VDS (V)
1
10
100
1000
0 200 400 600 800 1000
Capa
cita
nce
(pF)
Drain-Source Voltage, VDS (V)
Ciss
Coss
Conditions:TJ = 25 °CVAC = 25 mVf = 1 MHz
Crss
Figure 13. Typical 3rd Quadrant Characteristic TJ = -55 ºC
Figure 14. Typical 3rd Quadrant Characteristic TJ = 25 ºC
Figure 15. Typical 3rd Quadrant Characteristic TJ = 150 ºC Figure 16. Typical Output Capacitor Stored Energy
Figure 17. Typical Capacitances vs Drain Voltage (0-200 V)
Figure 18. Typical Capacitances vs Drain Voltage (0-1000 V)
6 C2M0280120D Rev -
0
50
100
150
200
250
300
350
0 2 4 6 8 10 12 14 16 18
Switc
hing
Ener
gy (u
J)
Drain to Source Current, IDS (A)
Conditions:TJ = 25 °CVDD = 800 VRG(ext) = 2.5 ΩVGS = -5/+20 VFWD = C4D02120AL = 412 μH
EOff
EOn
ETotal
Typical Performance
0
2
4
6
8
10
12
-55 -5 45 95 145
Drai
n-So
urce
Con
tinou
s Cur
rent
, IDS
(DC)
(A)
Case Temperature, TC (°C)
Conditions:TJ ≤ 150 °C
0
10
20
30
40
50
60
70
-55 -5 45 95 145
Max
imum
Dis
sipa
ted
Pow
er, P
tot(
W)
Case Temperature, TC (°C)
Conditions:TJ ≤ 150 °C
1E-3
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junc
tion
To C
ase
Impe
danc
e, Z t
hJC
(o C/W
)
Time, tp (s)
0.5
0.3
0.1
0.05
0.02
0.01 SinglePulse
0.01
0.10
1.00
10.00
0.1 1 10 100 1000
Drai
n-So
urce
Curr
ent,
I DS
(A)
Drain-Source Voltage, VDS (V)
100 µs
1 ms
10 µs
Conditions:TC = 25 °CD = 0, Parameter: tp
100 ms
Limited by RDS On
0
50
100
150
200
250
0 2 4 6 8 10 12 14 16 18
Switc
hing
Ener
gy (u
J)
Drain to Source Current, IDS (A)
Conditions:TJ = 25 °CVDD = 600 VRG(ext) = 2.5 ΩVGS = -5/+20 VFWD = C4D02120AL = 412 μH
EOff
EOn
ETotal
Figure 20. Power Dissipation Derating CurveFigure 19. Continuous IDS Current derating curve
Figure 21. Typical Transient Thermal Impedance(Junction - Case) with Duty Cycle Figure 22. Safe Operating Area
Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 800V)
Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V)
7 C2M0280120D Rev -
Typical Performance
0
20
40
60
80
100
120
140
0 5 10 15 20 25 30
Switc
hing
Loss
(uJ)
External Gate Resistor RG(ext) (Ohms)
EOff
EOn
ETotal
Conditions:TJ = 25 °CVDD = 800 VIDS = 6 AVGS = -5/+20 VFWD = C4D02120AL = 412 μH
0
20
40
60
80
100
120
-50 -25 0 25 50 75 100 125 150
Swith
cing
Loss
(uJ)
Junction Temperature, TJ (°C)
Conditions:IDS = 6 AVDD = 800 VRG(ext) = 2.5 ΩVGS = -5/+20 VFWD = C4D02120AL = 412 µH
EOff
EOn
ETotal
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20 25
Tim
e (n
s)
External Gate Resistor, RG(ext) (Ohms)
Conditions:TJ = 25 °CVDD = 800 VRL = 133 ΩVGS = -5/+20 V
td (off)
td (on)
tf
tr
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)Figure 26. Clamped Inductive Switching Energy vs.
Junction Temperature
Figure 27. Resistive Switching Times vs. External Gate Resistor Figure 28. Resistive Switching Time Description
8 C2M0280120D Rev -
Test Circuit Schematic
Figure 30. Clamped Inductive Switching Waveform Test Circuit
ESD Test Total Devices Sampled Resulting Classification
ESD-HBM All Devices Passed 1000V 2 (>2000V)
ESD-MM All Devices Passed 400V C (>400V)
ESD-CDM All Devices Passed 1000V IV (>1000V)
ESD Ratings
CDC=42.3 uF
L=412 uH
Q1
D1
C4D02120A2A, 1200V
SiC Schottky
VDC
D.U.TC2M0280120D
CDC=42.3 uF
L=412 uH
Q2
VDC
D.U.TC2M0280120D
Q1
VGS= - 5V
C2M0280120D
RG
RG
Figure 31. Body Diode Recovery Test Circuit
9 C2M0280120D Rev -
Package Dimensions
Package TO-247-3
Recommended Solder Pad Layout
TO-247-3
POSInches Millimeters
Min Max Min Max
A .190 .205 4.83 5.21
A1 .090 .100 2.29 2.54
A2 .075 .085 1.91 2.16
b .042 .052 1.07 1.33
b1 .075 .095 1.91 2.41
b2 .075 .085 1.91 2.16
b3 .113 .133 2.87 3.38
b4 .113 .123 2.87 3.13
c .022 .027 0.55 0.68
D .819 .831 20.80 21.10
D1 .640 .695 16.25 17.65
D2 .037 .049 0.95 1.25
E .620 .635 15.75 16.13
E1 .516 .557 13.10 14.15
E2 .145 .201 3.68 5.10
E3 .039 .075 1.00 1.90
E4 .487 .529 12.38 13.43
e .214 BSC 5.44 BSC
N 3 3
L .780 .800 19.81 20.32
L1 .161 .173 4.10 4.40
ØP .138 .144 3.51 3.65
Q .216 .236 5.49 6.00
S .238 .248 6.04 6.30
Pinout Information:
• Pin 1 = Gate• Pin 2, 4 = Drain • Pin 3 = Source
Part Number Package Marking
C2M0280120D TO-247-3 C2M0280120
1010 C2M0280120D Rev -
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.4600 Silicon Drive
Durham, NC 27703USA Tel: +1.919.313.5300
Fax: +1.919.313.5451www.cree.com/power
• RoHSCompliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiacdefibrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrolsystems,airtrafficcontrolsystems.
Notes
1 C2M0040120D Rev -
C2M0040120DSilicon Carbide Power MOSFET Z-FET
TM MOSFET
N-Channel Enhancement Mode Features
• High Speed Switching with Low Capacitances• High Blocking Voltage with Low RDS(on)• Easy to Parallel and Simple to Drive• Resistant to Latch-Up• Halogen Free, RoHS Compliant
Benefits
• HigherSystemEfficiency• Increased System Switching Frequency• Reduced Cooling Requirements• Increased System Reliability
Applications
• Solar Inverters• Switch Mode Power Supplies• High Voltage DC/DC converters• Motor Drive
Package
TO-247-3
Part Number Package
C2M0040120D TO-247-3
VDS 1200 V
ID @ 25˚C 60 A
RDS(on) 40 mΩ
Maximum Ratings (TC=25˚Cunlessotherwisespecified)
Symbol Parameter Value Unit Test Conditions Note
IDS (DC) Continuous Drain Current60
AVGS = 20 V, TC = 25 °C
Fig. 1940 VGS = 20 V, TC = 100 °C
IDS (pulse) Pulsed Drain Current 160 A Pulse width tP limited by Tjmax
TC = 25 °CFig. 22
VGS Gate Source Voltage -10/+25 V
Ptot Power Dissipation 330 W TC=25 °C, TJ = 150 °C Fig. 20
TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C
TL Solder Temperature 260 ˚C 1.6 mm (0.063”) from case for 10s
Md Mounting Torque 18.8
Nmlbf-in M3 or 6-32 screw
2 C2M0040120D Rev -
Electrical Characteristics (TC=25˚Cunlessotherwisespecified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions NoteV(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID=50μA
VGS(th) Gate Threshold Voltage2.4 2.8 V VDS = 10 V, ID = 10mA
Fig. 111.8 2.0 V VDS = 10 V, ID = 10mA,TJ = 150 °C
IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V
IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V
RDS(on) Drain-Source On-State Resistance40 52
mΩVGS = 20 V, ID = 40 A Fig.
4,5,684 100 VGS = 20 V, ID = 40 A, TJ = 150 °C
gfs Transconductance15.1
SVDS= 20 V, IDS= 40 A
Fig. 713.2 VDS= 20 V, IDS= 40 A, TJ = 150 °C
Ciss Input Capacitance 1893
pFVGS = 0 V
VDS = 1000 V
f = 1 MHzVAC = 25 mV
Fig. 17,18Coss Output Capacitance 150
Crss Reverse Transfer Capacitance 10
Eoss Coss Stored Energy 82 μJ Fig 16
td(on) Turn-On Delay Time 14.8
ns
VDD = 800 V, VGS = -5/20 VID = 40 A,RG(ext)=2.5Ω,RL=16ΩTiming relative to VDS Per IEC60747-8-4 pg 83
Fig. 27tr Rise Time 52
td(off) Turn-Off Delay Time 26.4
tf Fall Time 34.4
EON Turn-On Switching Loss 1.0mJ
VDS = 800 V, VGS = -5/20 V,ID = 40A, RG(ext) =2.5Ω,L=80μH
Fig. 25EOFF Turn Off Switching Loss 0.4
RG Internal Gate Resistance 1.8 Ω f = 1 MHz, VAC = 25 mV, ESR of CISS
Built-in SiC Body Diode Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VSD Diode Forward Voltage3.6 V VGS = - 5 V, ISD = 20 A, TJ = 25 °C
Note 13.3 V VGS = - 5 V, ISD = 20 A, TJ = 150 °C
trr Reverse Recover time 54 ns VGS = - 5 V, ISD = 40 A TJ = 25 °CVR = 800 Vdif/dt = 1000 A/µs
Note 1Qrr Reverse Recovery Charge 283 nC
Irrm Peak Reverse Recovery Current 15 A
Note (1): When using SiC Body Diode the maximum recommended VGS = -5V
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 0.34 0.38°C/W
Fig. 21
RθJC Thermal Resistance from Junction to Ambient 40
Gate Charge Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
Qgs Gate to Source Charge 28
nCVDS = 800 V, VGS = -5/20 VID = 40 APer IEC60747-8-4 pg 21
Fig. 12Qgd Gate to Drain Charge 37
Qg Gate Charge Total 115
3 C2M0040120D Rev -
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
On R
esist
ance
, RDS
On
(P.U
.)
Junction Temperature, TJ (°C)
Conditions:IDS = 40 AVGS = 20 Vtp < 200 µs
0
20
40
60
80
100
0.0 2.5 5.0 7.5 10.0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (V)
Conditions:TJ = 150 °Ctp < 200 µs
VGS = 20 V
VGS = 10 V
VGS = 18 V
VGS = 16 VVGS = 14 V
VGS = 12 V
0
20
40
60
80
100
0.0 2.5 5.0 7.5 10.0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (V)
Conditions:TJ = -55 °Ctp < 200 µs
VGS = 20 V
VGS = 10 V
VGS = 18 VVGS = 16 V
VGS = 14 V
VGS = 12 V
0
20
40
60
80
100
0.0 2.5 5.0 7.5 10.0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (V)
Conditions:TJ = 25 °Ctp < 200 µs
VGS = 20 V
VGS = 10 V
VGS = 18 V
VGS = 16 V VGS = 14 V
VGS = 12 V
Figure 2. Typical Output Characteristics TJ = 25 °C
Typical Performance
Figure 1. Typical Output Characteristics TJ = -55 °C
0
20
40
60
80
100
120
140
0 20 40 60 80 100
On R
esist
ance
, RDS
On
(mOh
ms)
Drain-Source Current, IDS (A)
Conditions:VGS = 20 Vtp < 200 µs
TJ = 150 °C
TJ = -55 °CTJ = 25 °C
0
20
40
60
80
100
120
140
-50 -25 0 25 50 75 100 125 150
On R
esist
ance
, RDS
On
(mOh
ms)
Junction Temperature, TJ (°C)
Conditions:IDS = 40 Atp < 200 µs
VGS = 20 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
Figure 3. Typical Output Characteristics TJ = 150 °C Figure 4. Normalized On-Resistance vs. Temperature
Figure 6. On-Resistance vs. Temperature For Various Gate Voltage
Figure 5. On-Resistance vs. Drain CurrentFor Various Temperatures
4 C2M0040120D Rev -
Typical Performance
0
10
20
30
40
50
60
0 2 4 6 8 10 12 14
Drai
n-So
urce
Cur
rent
, IDS
(A)
Gate-Source Voltage, VGS (V)
Conditions:VDS = 20 Vtp < 200 µs
TJ = 150 °C
TJ = -55 °C
TJ = 25 °C
-100
-80
-60
-40
-20
0-6 -5 -4 -3 -2 -1 0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (A)
VGS = 0 V
VGS = -2 V
VGS = -5 VCondition:TJ = -55 °Ctp < 200 µs
-100
-80
-60
-40
-20
0-6 -5 -4 -3 -2 -1 0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (A)
VGS = 0 V
VGS = -2 V
VGS = -5 V
Condition:TJ = 25 °Ctp < 200 µs
-100
-80
-60
-40
-20
0-6 -5 -4 -3 -2 -1 0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (A)
VGS = 0 V
VGS = -2 V
VGS = -5 VCondition:TJ = 150 °Ctp < 200 µs
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 -25 0 25 50 75 100 125 150
Thre
shol
d Vo
ltage
, Vth
(V)
Junction Temperature TJ (°C)
ConditionsVDS = 10 VIDS = 0.5 mA
ConditionsVDS = 10 VIDS = 10 mA
Typ
Min
-5
0
5
10
15
20
25
0 20 40 60 80 100 120 140
Gate
-Sou
rce V
olta
ge, V
GS
(V)
Gate Charge, QG (nC)
Conditions:IDS = 40 AIGS = 100 mAVDS = 800 VTJ = 25 °C
Figure 7. Typical Transfer CharacteristicFor Various Temperatures
Figure 8. Typical Body Diode Characteristic TJ = -55 ºC
Figure 9. Typical Body Diode Characteristic TJ = 25 ºC
Figure 10. Typical Body Diode CharacteristicTJ = 150 ºC
Figure 11. Typical and Minimum Threshold Voltage vs. Temperature Figure 12. Typical Gate Charge Characteristic 25 ºC
5 C2M0040120D Rev -
1
10
100
1000
10000
0 50 100 150 200
Capa
cita
nce
(pF)
Drain-Source Voltage, VDS (V)
Ciss
Coss
Conditions:TJ = 25 °CVAC = 25 mVf = 1 MHz
Crss
Typical Performance
-100
-80
-60
-40
-20
0-6 -5 -4 -3 -2 -1 0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (V)
Conditions:TJ = -55 °Ctp < 200 µs
VGS = 0 VVGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
-100
-80
-60
-40
-20
0-6 -5 -4 -3 -2 -1 0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (V)
Conditions:TJ = 25 °Ctp < 200 µs
VGS = 0 VVGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
-100
-80
-60
-40
-20
0-6 -5 -4 -3 -2 -1 0
Drai
n-So
urce
Cur
rent
, IDS
(A)
Drain-Source Voltage, VDS (V)
Conditions:TJ = 150 °Ctp < 200 µs
VGS = 0 V VGS = 5 VVGS = 10 V
VGS = 15 V
VGS = 20 V
0
20
40
60
80
100
0 200 400 600 800 1000 1200
Stor
ed En
ergy
, EO
SS(µ
J)
Drain to Source Voltage, VDS (V)
1
10
100
1000
10000
0 200 400 600 800 1000
Capa
cita
nce
(pF)
Drain-Source Voltage, VDS (V)
Ciss
Coss
Conditions:TJ = 25 °CVAC = 25 mVf = 1 MHz
Crss
Figure 13. Typical 3rd Quadrant Characteristic TJ = -55 ºC
Figure 14. Typical 3rd Quadrant Characteristic TJ = 25 ºC
Figure 15. Typical 3rd Quadrant Characteristic TJ = 150 ºC Figure 16. Typical Output Capacitor Stored Energy
Figure 17. Typical Capacitances vs Drain Voltage (0-200 V)
Figure 18. Typical Capacitances vs Drain Voltage (0-1000 V)
6 C2M0040120D Rev -
0
1
2
3
4
5
6
0 10 20 30 40 50 60 70 80 90
Switc
hing
Ener
gy (m
J)
Drain to Source Current, IDS (A)
Conditions:TJ = 25 °CVDD = 800 VRG(ext) = 2.5 ΩVGS = -5/+20 VFWD = C4D20120AL = 80 μH
EOff
EOn
ETotal
Typical Performance
0
10
20
30
40
50
60
70
-55 -5 45 95 145
Drai
n-So
urce
Con
tinou
s Cur
rent
, IDS
(DC)
(A)
Case Temperature, TC (°C)
Conditions:TJ ≤ 150 °C
0
50
100
150
200
250
300
350
-55 -5 45 95 145
Max
imum
Dis
sipa
ted
Pow
er, P
tot(
W)
Case Temperature, TC (°C)
Conditions:TJ ≤ 150 °C
100E-6
1E-3
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junc
tion
To C
ase
Impe
danc
e, Z t
hJC
(o C/W
)
Time, tp (s)
0.5
0.3
0.1
0.05
0.02
0.01 SinglePulse
0.01
0.10
1.00
10.00
100.00
0.1 1 10 100 1000
Drai
n-So
urce
Curr
ent,
I DS
(A)
Drain-Source Voltage, VDS (V)
100 µs
1 ms
10 µs
Conditions:TC = 25 °CD = 0, Parameter: tp
100 ms
Limited by RDS On
0
0.5
1
1.5
2
2.5
3
3.5
4
0 10 20 30 40 50 60 70 80 90
Switc
hing
Ener
gy (m
J)
Drain to Source Current, IDS (A)
Conditions:TJ = 25 °CVDD = 600 VRG(ext) = 2.5 ΩVGS = -5/+20 VFWD = C4D20120AL = 80 μH
EOff
EOn
ETotal
Figure 20. Power Dissipation Derating CurveFigure 19. Continuous IDS Current derating curve
Figure 21. Typical Transient Thermal Impedance(Junction - Case) with Duty Cycle Figure 22. Safe Operating Area
Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 800V)
Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V)
7 C2M0040120D Rev -
Typical Performance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 5 10 15 20 25 30
Switc
hing
Loss
(mJ)
External Gate Resistor RG(ext) (Ohms)
EOff
EOn
ETotal
Conditions:TJ = 25 °CVDD = 800 VIDS = 40 AVGS = -5/+20 VFWD = C4D20120AL = 80 μH
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
Swith
cing
Loss
(mJ)
Junction Temperature, TJ (°C)
Conditions:IDS = 40 AVDD = 800 VRG(ext) = 2.5 ΩVGS = -5/+20 VFWD = C4D20120AL = 80 µH
EOff
EOn
ETotal
0
10
20
30
40
50
60
70
80
90
100
0 4 8 12 16 20
Tim
e (n
s)
External Gate Resistor, RG(ext) (Ohms)
Conditions:TJ = 25 °CVDD = 800 VRL = 20 ΩVGS = -5/+20 V
td (off)
td (on)
tf
tr
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)Figure 26. Clamped Inductive Switching Energy vs.
Junction Temperature
Figure 27. Resistive Switching Times vs. External Gate Resistor (VDD = 800V, ID = 40A) Figure 28. Resistive Switching Time Description
8 C2M0040120D Rev -
Test Circuit Schematic
Figure 30. Clamped Inductive Switching Waveform Test Circuit
ESD Test Total Devices Sampled Resulting Classification
ESD-HBM All Devices Passed 1000V 2 (>2000V)
ESD-MM All Devices Passed 400V C (>400V)
ESD-CDM All Devices Passed 1000V IV (>1000V)
ESD Ratings
CDC=42.3 uF
L=80 uH
Q1
D1
C4D20120A20A, 1200VSiC Schottky
VDC
D.U.TC2M0040120D
CDC=42.3 uF
L=80 uH
Q2
VDC
D.U.TC2M0040120D
Q1
VGS= - 5V
C2M0040120D
Figure 31. Body Diode Recovery Test Circuit
9 C2M0040120D Rev -
Package Dimensions
Package TO-247-3
Recommended Solder Pad Layout
TO-247-3
POSInches Millimeters
Min Max Min Max
A .190 .205 4.83 5.21
A1 .090 .100 2.29 2.54
A2 .075 .085 1.91 2.16
b .042 .052 1.07 1.33
b1 .075 .095 1.91 2.41
b2 .075 .085 1.91 2.16
b3 .113 .133 2.87 3.38
b4 .113 .123 2.87 3.13
c .022 .027 0.55 0.68
D .819 .831 20.80 21.10
D1 .640 .695 16.25 17.65
D2 .037 .049 0.95 1.25
E .620 .635 15.75 16.13
E1 .516 .557 13.10 14.15
E2 .145 .201 3.68 5.10
E3 .039 .075 1.00 1.90
E4 .487 .529 12.38 13.43
e .214 BSC 5.44 BSC
N 3 3
L .780 .800 19.81 20.32
L1 .161 .173 4.10 4.40
ØP .138 .144 3.51 3.65
Q .216 .236 5.49 6.00
S .238 .248 6.04 6.30
Pinout Information:
• Pin 1 = Gate• Pin 2, 4 = Drain • Pin 3 = Source
Part Number Package Marking
C2M0040120D TO-247-3 C2M0040120
1010 C2M0040120D Rev -
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.4600 Silicon Drive
Durham, NC 27703USA Tel: +1.919.313.5300
Fax: +1.919.313.5451www.cree.com/power
• RoHSCompliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiacdefibrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrolsystems,airtrafficcontrolsystems.
Notes