CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC...

23
Dr Renato Turchetta CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications 2 3rd Fraunhofer IMS Workshop on CMOS Imaging 16-17 May 2006, Duisburg / Germany Outline Introduction. CMOS for radiation detection in scientific applications Visible light UV X-ray Charged particles Advanced pixels Conclusions

Transcript of CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC...

Page 1: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

Dr Renato Turchetta

CMOS Sensor Design Group

CCLRC Technology

CMOS Image Sensorsfor

Scientific Applications

23rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

OutlineIntroduction.

CMOS for radiation detection in

scientific applications

Visible light UV

X-ray Charged particles

Advanced pixels

Conclusions

Page 2: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

33rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

CCLRC-RALCCLRC is one of Europe’s largest multidisciplinary research

organisations. It owns and operates three laboratories.

Rutherford Appleton Laboratory (RAL) is the largest one.

Technology department providing engineering solutions for UK,

European and world-wide research institutes and large facilities: CERN,

ESRF, ESA, NASA, …

Main activity on radiation detectors and readout electronics: CCD,

hybrid active pixel sensors, CMOS image sensors.

CMOS Image sensors started in 1999 with the design of a StarTracker.

43rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

OutlineIntroduction.

CMOS for radiation detection in

scientific applications

Visible light UV

X-ray Charged particles

Advanced pixels

Conclusions

Page 3: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

53rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Metal layers

Polysilicon

P-Well N-Well P-Well

N+ N+ P+ N+

CMOS sensors for radiation detectors

Dielectric for insulation and passivation

Silicon band-gap of 1.1 eV ↔ cut-off at 1100 nm.

Good efficiency up to ‘low’ energy X-rays. For higher energy (or neutrons), add scintillator or other material.

Need removal of substrate for detection of UV, low energy electrons.

Photons

Charged particles

100% efficiency.

Radiation

--

--

--

- ++

+++

++

- +- +- +

P-substrate (~100s µm thick)

P-epitaxial layer(up to to 20 µm thick)

Potential barriers

epi

sub

N

Nln

q

kTV=

63rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Photon absorption

For higher energy photons, number of N electron-hole pairs generated is proportional to absorbed energy ∆E with proportionality constantW = 3.6 eV / pair

N = ∆E / W

Higher absorption by adding absorber (scintillator) or hybrid solution (detector bump-bonded to electronics).

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73rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Charged particles in siliconEnergy loss vs particle energy in silicon

N = ∆E / W, again!N = ~ 80 / µm in silicon(from H. Bichsel)

Most probable value Energy loss distribution

Landau curve

83rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Applications for RAL CMOS APSo Space science: Star Tracker, ESA Solar Orbiter, …

o Earth Observation: 3 µm pixel linear sensors, ..

o Particle Physics: ILC, vertex and calorimeter (CALICE), SLHC, …

o Biology: electron microscopy, neuron imaging

o Medicine: mammography, panoramic dental

o …

Detecting:

Photons

Charged particles

Voltages (!)

Page 5: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

93rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

CMOS sensors requirements. 1

Wide dynamic range: 16 bits and beyond

Low noise: <~ 10 e- rms < 1 e- rms ?

Radiation hardness: Mrad and beyond

Speed: data rate in excess of 50 MB/sec 500 MB/sec and beyond

Short integration time and gating ns

Large pixels: >10 µm 50 µm

No data compression or lossless compression

Large volume of data: 100s MB/sec for minutes, hours, …

Images can be mainly dark with only a few bright spots

103rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

CMOS sensors requirements. 2

Requires advanced pixel designs

In-pixel data reduction

Only NMOS in pixel if 100% efficiency for charged particle

detection is required

Large area: side ~ cm’s; no focusing possible for X-ray or charged

particles

SOI on high resistivity handle wafers full CMOS

Semiconductor deposition

Page 6: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

113rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

OutlineIntroduction.

CMOS for radiation detection in

scientific applications

Visible light UV

X-ray Charged particles

Advanced pixels

Conclusions

123rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Optical tweezersParticles are optically trapped and

controlled molecular forces at picoNewton level and position resolution <~ 1 nm

Applications in medicine, cell biology, DNA studies, physical chemistry, …

RNA

RNA Polymerase

C of G movement for all BallFix files

-0.1

-0.05

0

0.05

0.1

0.15

-0.1 -0.08 -0.06 -0.04 -0.02 0 0.02 0.04 0.06 0.08 0.1

X value

Y v

alu

e

BallFix1

BallFix2

BallFix3

BallFix42p5u

BallFix45u

BallFix52p5u

BallFix55u

Measurement of spatial resolution <~ 1 nm(State of the art ~ a few nm)

Trajectory of beads

X

Y

130 nm

130

nm

Page 7: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

133rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Vanilla sensor.Large pixels: 25 µm, design in 0.35 µm CMOS

Format 512x512 ( StarTracker) + black pixels

3T pixel with flushed reset

Noise < 25 e- Full well capacity > 105 e- DR ~ 4000 ~ 12 bits

On-chip SAR ADCs, one for 4 columns with column-FPN control. Selectable resolution: 10 or 12. Adjustable range.

Analogue output at 4.5 MHz

Row and column address decoder

Full frame readout: Frame rate > 100 fps.

Region-of-interest readout: Fully programmable.Example speed: six 6x6 regions of interest @ 20k fps

Two-sided buttable for 2x2 mosaic

Design for backthinning

Detecting capability not limited to visible light!

143rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

OutlineIntroduction.

CMOS for radiation detection in

scientific applications

Visible light UV

X-ray Charged particles

Advanced pixels

Conclusions

Page 8: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

153rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

ESA Solar OrbiterStudy of the Sun’s atmosphere and heliosphere

Study the Sun from close up (45 solar radii or 0.21 AU) pixel size of 35 km on the Sun or 0.05 arcsec from Earth

Launch in 2015, mission completed in 2024

Among the objective: observation of the sun into the EUV band (down to 170 nm)

High radiation environment

High resolution large format (4kx4k or 2k * 2k)

linearity

14-bit dynamic range

low noise

good uniformity

low power

Lead technology scientist: Dr. N. Waltham

163rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

CMOS Sensors for Solar OrbiterDesign of sensors

2002: 4k x 3k, 5 µm pixels in 0.25 µm CMOS, 8 µm epitaxial wafers

2005: 1.5k x 0.5k, 10 µm pixels in 0.35 µm CMOS, 14 and 20 µm

epitaxial wafers

Enhancing EUV sensitivity

Backthinning (collaboration with e2v)2002: on 512x512 StarTracker, 4 µm epitaxial wafers

2004/5: on 4kx3k

Front etching2002: on 512x512 StarTracker, 4 µm epitaxial wafers, by Focused

Ion Beam (FIB)

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173rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Enhancing UV sensitivity

Light Source

P substrate

P Epitaxial layerN well P well

n n nn

Front-illuminated

Nitride coated hi-resistivitysilicon substrate

Light Source

n n n nNwell

P Epitaxial layerP well

Back-thinned Back-illuminated

Front-etchedFront-illuminated

183rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

4kx3k sensorFront-illuminated Back-illuminated

Front Illuminated PTC at 0 °C

0

20

40

60

80

100

120

140

160

180

200

0 200 400 600 800 1000 1200 1400 1600 1800

Average Mean (adu)

Var

ian

ce/

2 -

DC

IR and Blue Filtered Back Illuminated PTC at 0 °C

0

20

40

60

80

100

120

140

160

180

200

-200 0 200 400 600 800 1000 1200 1400 1600 1800

Average Mean (adu)

Va

rian

ce/

2 -D

C

Back-illuminated image was taken through a 50nm filter at 350nm with IR-blocking filter.

Fill factor better

than 75% achieved

on a 5 µm pixel (1

PMOS transistor +

back-illumination)

QE better than

20% at 200 nm

No AR coating

used

Page 10: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

193rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

OutlineIntroduction.

CMOS for radiation detection in

scientific applications

Visible light UV

X-ray Charged particles

Advanced pixels

Conclusions

203rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Medical X-ray detectionProject I-ImaS (http://www.i-imas.ucl.ac.uk) funded by EU

Application: mammography, dental (panoramic and cephalography)

Scanning system with real-time data analysis to optimised dose uptake

Step-and-shoot, not TDI

Time for 1 image: a few seconds

Large pixels: 32 µm

Image area: 18cmx24cm covered by several sensors in several steps

Image size: 5120x7680 = 40Mpixel/image @ 14 bits, ~70MBytes

Integration time per pixel: 10 ms

1.5 D CMOS sensor coupled to scintillator

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213rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

1.5 D CMOS sensorDesigned in 0.35 µm CMOS512*32 pixels at 32 µm pitch plus 4

rows and columns on both sides for edge effects

200,000 e- full well33 to 48 e- ENC depending on the pixel

reset technique usedmore than 72dB S/N ratio at full well

(equivalent to 12 bit dyn. range)possible to use hard, soft or flushed

reset schemes14 bit digital output; one 14-bit SAR

ADC every 32 channel20 MHz internal clock; 40 MHz digital

data ratedata throughput: 40MHz·7bit =

280Mbit/s = 35 MB/sec

Sensor floorplan

223rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Preliminary measurements

PTC with scintillator Direct X-ray conversion

Page 12: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

233rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

OutlineIntroduction.

CMOS for radiation detection in

scientific applications

Visible light UV

X-ray Charged particles

Advanced pixels

Conclusions

243rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Low energy particles, e.g. a few keV electrons, requires backthinning and

backillumination.

High energy traverses front layers of passivation. See examples below

Detection of charged particles

27.5 keV

20 keV 15 keV

25 keV

Examples with front-illuminated sensor

25 keV

Energy loss distribution

Page 13: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

253rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

40keV electrons 120keV electrons

Intermediate energy electron detectionStarTracker 512x512 pixels, 25 µm pitch, 0.5 µm CMOS, 4 µm epitaxial layer

263rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

‘Big science’ projects: large particle accelerators (Ø km), large international

(world-wide) collaborations.

High-energy particles (↑ TeV) collide new particles are created insight

into ultimate structure of matter.

Particle, or High-Energy, Physics

Detectors are large

apparatus (size ~m)

with cylindrical

symmetry and several

sub-detectors.

Example of CMS at the

Large Hadron Collider

Page 14: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

273rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

CMOS Image Sensors for Particle PhysicsFirst proposed end of 1999

Low noise detection of MIPs first demonstrated in 2001 with a 3T pixel

Since then, with a number of technologies/epi thickness:

AMS 0.6/14, 0.35/∞, 0.35/14, 0.35/20, AMIS (former MIETEC) 0.35/4, IBM

0.25/2, TSMC 0.35/10, 0.25/8, 0.25/∞, UMC 0.18/∞

Noise <~ 10 e- rms with off-chip,

off-line CDS

Spatial resolution 1.5 µm

@ 20 µm pitch, with full analogue

readout

Good radiation hardness

Low power

Speed: rolling shutter

can be a limit

283rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

RAL Sensors for Particle Physics

Parametric test sensor: RAL_HEPAPS family

RAL_HEPAPS2: 0.25 µm CIS, 8 µm epitaxial layer, 384*224

pixels, 15 µm pitch: 3MOS, 4MOS, ChargePreAmplifier

(CPA), Flexible APS (FAPS, 20 µm pitch)

RAL_HEPAPS3: 0.25 µm MM, no epitaxial layer, 192*192

pixels, 15 µm pitch: 3MOS, 4MOS, Deep N-well diodes

Test sensors

RAL_HEPAPS4: 0.35 µm CIS, 20 µm epitaxial layer,

1026*384 pixels, 15 µm pitch. 3 versions: 1, 2 or 4

diodes per pixel. Rad-hard, 5MHz row rate (now in

manufacturing)

Page 15: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

293rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Soft and hard reset

RESET

ROW_SELECT

Output

Diode

Vreset

Hard resetRESET –Vreset > Vth for reset transistor

Noise (ENC in e- rms)

Soft resetRESET ~ Vreset.A factor of >~2 reduction(reset in the dark)

Noise (ENC in e- rms)

Measured noise distributions for a 64x64 pixel test structure.

Not corrected for system noise

303rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Radiation hardness

Transistors.

Threshold shift: reduces with shrinking feature size

Bird’s beak effect: use enclosed geometry transistors

Transistor leakage current: use guard-rings to

separate transistors

Diodes.

Radiation damage increases leakage current

Radiation damage reduces minority carrier lifetime

diffusion distance is reduced

-V

fb/ M

rad

(Si)

11E-3

1E-2

1E-1

1E0

1E1

1E2

1E3

10010

With

out t

unne

l effe

ct

With

tunn

el e

ffect

Oxide thickness (nm)

~tox2

0.25 micron

Page 16: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

313rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Single pixel S/N dependence on impact point. 1

• S/N varies over pixel between 12 and 4 before irradiation.

• S drops to zero at edges after 1014 p/cm2.G. Villani (RAL)

1015

No rad

Device simulation.Single diode 15 µm pixel

323rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Single pixel S/N dependence on impact point. 2

1015

No rad 1014

No rad

Device simulation.4-diode 15 µm pixel

G. Villani (RAL)

• Less variation in S/N varies over pixel before and after irradiation.

• S at edges still usable after 1015 p/cm2.

Device simulation.Single diode 15 µm pixel

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333rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Signal from individual particles

Number of pixels in a “3x3” cluster

Cluster in S/N

Beta source (Ru106) test results. Sensors HEPAPS2.

Signal spread

343rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Distribution of signals

Reference

Higher VT

Lower VT

Diode 3x3

Diode 1.2x1.2

GAA

4 diodes

Specs

25.04.451114MOS A

24.24.701144MOS B

24.44.141014MOS C

20.33.31673MOS A

23.83.87923MOS B

18.04.85873MOS C

20.14.94993MOS E

S/NNSType

Typical ‘Landau distribution

From different types of pixels. HEPAPS2

Page 18: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

353rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Radiation test. Source results

• Noise seems to

increase slightly with

dose.

• Signal decreases with

dose.

Lower VT4MOSC

Higher VT4MOSB

Reference4MOSA

4 diodes3MOSE

GAA3MOSC

1.2x1.2 µm23MOSB

3x3 µm23MOSA

J. Velthuis (Liv)

No

ise

(AD

U c

ou

nts

)

No

ise

(AD

U c

ou

nts

)

Sig

nal

(A

DU

co

un

ts)

Sig

nal

(A

DU

co

un

ts)

Dose (log10(p/cm2)) Dose (log10(p/cm2))

Dose (log10(p/cm2)) Dose (log10(p/cm2))

363rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Radiation test. Summary

• Sensors yield reasonable S/N up to 1014 p/cm2

• 0.35 µm technology in the pixel transistors. Enclosed layout in 3MOS_E• S/N reduction seems to be dominated by charge collection• Especially 3MOS_E (4 diodes) looks interesting

– Larger capacitance yields larger noise– Four diodes: less dependence of S/N on impact point– After irradiation remains a larger “sensitive area”

-

+

+ J. Velthuis (Liv)

S/N

Dose (log10(p/cm2))

S/N

Dose (log10(p/cm2))

Usable sensor

Page 19: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

373rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

HEPAPS 41026x384 pixels

3 versions: 1 diode; 2 diodes; 4 diodes

15 µm pitch

ENC <~ 15 e- rms (reset-less)

5 MHz line rate

Rad-hard: > Mrad

Designed in 0.35 µm CMOS technology

Epi thickness 20 µm

Simple shift-register control

Odd-even rows output in parallel; Left-right symmetry

Single-ended and differential output

383rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

International Linear Collider: CMOS sensors proposed for Vertex and

Electromagnetic calorimeter.

Radiation hardness: moderate (~100s kRad, 1012 n/cm2)

Large area (stitched) sensor required in both cases.

Total covered area: ~m2 for Vertex, a few 103 m2 for Electromagnetic calorimeter

They both call for advanced APS

Electron e-

(~TeV)

Anti-electron (positron) e+

(~TeV)

International Linear Collider

Page 20: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

393rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

OutlineIntroduction.

CMOS for radiation detection in

scientific applications

Visible light UV

X-ray Charged particles

Advanced pixels

Conclusions

403rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Flexible Active Pixel Sensor

10 memory cell per pixel

28 transistors per pixel

20 µm pitch

40x40 arrays

Design for the Vertex detector at the International Linear Collider

Pulses LED test (single pixel)

Light pulse

Amplitude

Time

Page 21: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

413rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

FAPS. Signal distribution• Test with source

• Correlated Double Sampling readout (subtract Scell 1)

• Correct remaining common mode and pedestal

• Calculate random noise

– Sigma of pedestal and common mode corrected output

• Cluster definition

– Signal >8σ seed

– Signal >2σ next

• Note hit in cell i also present in cell i+1.

• S/Ncell between 14.7±0.4 and 17.0±0.3

Seed 3x3 5x5

J. Velthuis (Liv)

423rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

OPIC (On-Pixel Intelligent CMOS Sensor)

• In-pixel ADC

• In-pixel TDC

• Data sparsificationTest structure. 3 arrays of 64x72 pixels @ 30 µm pitchFabricated in 0.25 µm CMOS technology

This design is the starting point for Calice: detection of MIPs+ time stamps at 150 ns resolution over 2 ms

Page 22: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

433rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

Experimental resultsIn-pixel ADC Timing mode capture

In-pixel thresholding

Sparse data (timing mode)

443rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

OutlineIntroduction.

CMOS for radiation detection in

scientific applications

Visible light UV

X-ray Charged particles

Advanced pixels

Conclusions

Page 23: CMOS Image Sensors - HEP Group Research Pages ·  · 2006-09-08CMOS Sensor Design Group CCLRC Technology CMOS Image Sensors for Scientific Applications ... ESA Solar Orbiter, ...

453rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

CMOS Image Sensors can be used to detect photons from IR down

to low energy X-rays (direct detection), X-rays (indirect detection)

and charged particles (direct detection with 100% efficiency) (… and

voltages)

Demonstrators built

For some applications, large sensors already built

Working towards delivery of CMOS Image Sensors-based for

scientific instruments for space-science, particle physics and bio-

medical applications

And last but not least …

Conclusions

463rd Fraunhofer IMS Workshop on CMOS Imaging16-17 May 2006, Duisburg / Germany

AcknowledgementsN. Allinson + MI3 collaboration

R. Speller + I-ImaS collaboration

A. Fant

J. Crooks

A. Clark

P. Gąsiorek

N. Guerrini

R. Halsall

M. Key-Charriere

S. Martin

N. Waltham

M. French

M. Prydderch

G. Villani

M. Tyndel

P. Allport

G. Casse

A. Evans

D. Prior

J. Velthuis

W. Faruqi

R. Henderson

P. Dauncey

N. Watson

P. Willmore

M. Towrie

A. Ward

+ ... all the others I forgot to mention!