FRAUNHOFER INSTITUTE FOR ORGANIC ELECTRONICS, ELECTRON BEAM AND PLASMA TECHNOLOGY FEP

CHARACTERIZATION OF THIN FILMS, SURFACES AND DEVICESSERVICE FOR RESEARCH, DEVELOPMENT AND QUALITY CONTROL

Structure and microstructure

The department materials analysis at

Fraunhofer FEP has versatile methods

for characterization of thin films and

surfaces. The equipment and the wide

Characterization of thin films and surfaces

analytical experience of our staff are

available for the product and technology

development of our institute and are

offered as a service to our customers.

Cross fracture and surface of a molybdenum layer (Topographic contrast)

Ion polished cross section of a permeation barrier layer system (Material contrast)

Emitter layer of a polycrystalline silicon solar cell (Voltage contrast)

Ion polished cross section of a CdTe solar cell (Crystal orientation contrast)

Ultra high resolution FE scanning

electron microscope, SU8000 (Hitachi)

Ion preparation technique for cross

sections, Cross Section Polisher,

SM-09010 (JEOL)

Metallographic preparation technique

and optical microscope Polyvar 2 Met

(Reichert)

Metallographic cross section of a copper layer

Metallographic cross section of a magnesium-zinc alloy layer

Typical applications areas are layers for

optics, sensor technology, displays,

photovoltaic, packaging, corrosion and

wear resistance.

21

Topography

Chemical composition

Surface of a FTO layer with typical crystallite morphology

Roughness scan of a steel sheet

Chemical depth profile of a CdTe thin film solar cell

Surface of a (Ti,Nb)OX layer with spherulitic crystallites

Stress determination of thin layers from curvature

Chemical depth profile of an optical rugate filter

Atomic force microscope (AFM) Explorer

(Topometrix)

Energy-dispersive X-ray spectroscopy (EDS)

SDD detector Apollo XV (EDAX)

Surface profiler P15-LS (TENCOR)

Glow discharge optical emission spectros-

copy (GD-OES)

GD-Profiler 2 (HORIBA Jobin Yvon)

750

500

250

0

-250

-500

-750

rou

gh

nes

s in

nm

scan length in µm0 250 500 750 1000

302520151050

-5-10

z in

µm

scan length in mm

difference

post-scan

pre-scan

0 10 20 30 40 50 60 70

3 4 5

EDS spectrum of a SiOXNY layer EDS spectrum of a (Zn, Sn)OX layer

6050403020100

2.0

1.5

1.0

0.5

0.0

con

cen

trat

ion

in a

t. %

inte

nsi

ty in

V

sputter depth in µm sputter time in sCd Te S Sn

Ta*5 Si*20 O*3 Ca NaO

Si Ca Na Ti

0 200 400 600 8000.0 0.5 1.0 1.5 2.0 2.5 3.0

Layer properties

T ITLE PHOTO

FE scanning electron microscope

SU8000 (Hitachi)

1 Metallographic preparation

technique (Struers)

2 Optical microscope

Polyvar 2 Met (Reichert)

3 Atomic force microscope

Explorer (Topometrix)

4 Surface profiler P15-LS (TENCOR)

5 Glow discharge optical emission

spectrometer GD-Profiler 2

(HORIBA Jobin Yvon)

6 Spectroscopic ellipsometer SE850

(Sentech)

7 Nano Indenter XP (MTS)

Optical Mechanical Electrical

▪ spectroscopic

ellipsometry

(SE850, Sentech)

▪ UV VIS spectroscopy

(Lambda 950,

Perkin Elmer)

▪ haze measurement

(Haze-guard plus,

BYK-Gardner)

▪ hardness and

indentation modulus

(Nano Indenter XP, MTS)

▪ abrasion resistance

(Taber Abraser)

▪ scratch adhesion test

(MST4, CSEM)

▪ layer thickness

(Calotest, CSEM)

▪ I-V curve of solar cells

(Sun 300, LOT)

▪ quantum efficiency

(Oriel IQE-200,

Newport)

▪ photo and dark

conductivity

(SUSS Prober und

Keithley)

▪ electrical four point

probe

(FPP 5000, Veeco)

Permeation barrier Corrosion Environmental

▪ water vapour

permeability

(WDDG, Brugger Fein-

mechanik; HiBarSens

2.0 HT, Sempa)

▪ electrical and optical

Calcium test

▪ oxygen permeability

(OX-TRAN 2/20,

Mocon)

▪ corrosion test system for

condensation water test

and salt spray test

(SKB 400 A-SC, Liebisch)

▪ environmental chamber

- 40 ... + 150°C;

adjustable humidity

(SH-241, ESPEC)

6 7

Fraunhofer Institute for

Organic Electronics, Electron Beam

and Plasma Technology FEP

Winterbergstr. 28

01277 Dresden, Germany

Contact persons

www.fep.fraunhofer.de

Dr. Olaf Zywitzki

Phone +49 351 2586-180

Dr. Thomas Modes

Phone +49 351 2586-183

▪ analytical services for analysis of the

effect of process parameters on

structure and microstructure, topo-

graphy, chemical composition and

properties of thin films

▪ support of our customers for quality

control and failure analysis

Our offer

Electro-optical device characterization

8 Water vapour permeability tester

(Brugger)

9 Calotest (CSEM)

10 Abrasion resistance (Taber Abraser)

11 Electrical conductivity

(SUSS Prober und Keithley)

▪ technical advice for selection and

combination of suitable analysis

methods

▪ development of analysis methods for

specific applications and measure-

ment tasks

8 9 10 11

▪ electro-optical characteristic within the visible range (380 to 800 nm) including

spectral and angular distribution

▪ luminance, quantum efficiency, luminous efficacy, color temperature,

and color point (e.g. following CIE1931)

▪ homogeneity of the luminance on large area

▪ direct measurement of the absolute luminous flux for panels up to about

1000 cm² active area

▪ high resolution IR images on large area

▪ transmission and reflection in the visible and near-infrared range

▪ emission and excitation spectra of organic materials within a spectral range of 200 to 850 nm

▪ determination of the luminance degradation, color shift as well as the drop-down rate of

OLED devices under long-term operation

▪ long-term measurements under standardized climatic conditions for the

determination of the shelf lifetime of OLED devices

▪ solar cell characterization (solar simulator, photocurrent-mapper MP15)

Luminance- / Current- voltage characteristic

OLED spectraDetermination of operational lifetime

102

101

100

10-1

10-2

10-3

10-4

10-5

10-6

Cu

rren

t D

ensi

ty [

mA

/cm

²]

Voltage [V]

2,6 V @100 cd/m²2,9 V @1000 cd/m²

105

104

103

102

101

-5 -4 -3 -2 -1 0 1 2 3 4 5

Lum

inan

ce [

cd/c

m²]

500 103 104 105

105

104

103

102

101

100

10-1

10-2

50%

Lif

etim

e [h

]

Start Luminance [cd/m²]

30 mA/cm² 60 mA/cm²

90 mA/cm²

120 mA/cm²

0,08

0,07

0,06

0,05

0,04

0,03

0,02

0,01

0,00

Spectrum @1700 cd/m²C.I.E. 0.36/0.34

Spec

t. R

adia

nce

[W

/(m

²·sr

·nm

)]

Wavelength [nm]300 400 500 600 700 800

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