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BUK9880-55A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources 3. Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j ≥ 25 °C; T j ≤ 150 °C - - 55 V I D drain current V GS = 5 V; T sp = 25 °C; Fig. 3 ; Fig. 2 - - 7 A P tot total power dissipation T sp = 25 °C; Fig. 1 - - 8 W Static characteristics V GS = 10 V; I D = 8 A; T j = 25 °C - 62 73 V GS = 4.5 V; I D = 8 A; T j = 25 °C - - 89 R DSon drain-source on-state resistance V GS = 5 V; I D = 8 A; T j = 25 °C; Fig. 13 ; Fig. 14 - 68 80 Avalanche ruggedness E DS(AL)S non-repetitive drain- source avalanche energy I D = 6 A; V sup ≤ 55 V; R GS = 50 Ω; V GS = 5 V; T j(init) = 25 °C; unclamped - - 36 mJ

Transcript of BUK9880-55A - assets.nexperia.com · BUK9880-55A mcj)cMoN[k,kI3Q1ksiiMoLvauMcucMlcn Nexperia...

BUK9880-55AN-channel TrenchMOS logic level FET19 March 2014 Product data sheet

1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.

2. Features and benefits• Low conduction losses due to low on-state resistance• Q101 compliant• Suitable for logic level gate drive sources

3. Applications• 12 V and 24 V loads• Automotive and general purpose power switching• Motors, lamps and solenoids

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 55 V

ID drain current VGS = 5 V; Tsp = 25 °C; Fig. 3; Fig. 2 - - 7 A

Ptot total power dissipation Tsp = 25 °C; Fig. 1 - - 8 W

Static characteristics

VGS = 10 V; ID = 8 A; Tj = 25 °C - 62 73 mΩ

VGS = 4.5 V; ID = 8 A; Tj = 25 °C - - 89 mΩ

RDSon drain-source on-stateresistance

VGS = 5 V; ID = 8 A; Tj = 25 °C; Fig. 13;Fig. 14

- 68 80 mΩ

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source avalancheenergy

ID = 6 A; Vsup ≤ 55 V; RGS = 50 Ω;VGS = 5 V; Tj(init) = 25 °C; unclamped

- - 36 mJ

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9880-55AN-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 2 / 13

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 G gate

2 D drain

3 S source

4 D drain1 32

4

SC-73 (SOT223)S

D

G

mbb076

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

BUK9880-55A SC-73 plastic surface-mounted package with increased heatsink; 4leads

SOT223

BUK9880-55A/CU SC-73 plastic surface-mounted package with increased heatsink; 4leads

SOT223

7. MarkingTable 4. Marking codesType number Marking code

BUK9880-55A 988055A

BUK9880-55A/CU 988055

8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - 55 V

VDGR drain-gate voltage RGS = 20 kΩ - 55 V

VGS gate-source voltage -15 15 V

Ptot total power dissipation Tsp = 25 °C; Fig. 1 - 8 W

Tsp = 100 °C; VGS = 5 V; Fig. 2 - 4 AID drain current

Tsp = 25 °C; VGS = 5 V; Fig. 3; Fig. 2 - 7 A

IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3 - 30 A

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9880-55AN-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 3 / 13

Symbol Parameter Conditions Min Max Unit

Tstg storage temperature -55 150 °C

Tj junction temperature -55 150 °C

VGSM peak gate-source voltage pulsed; tp ≤ 50 µs -15 15 V

Source-drain diode

IS source current Tsp = 25 °C - 7 A

ISM peak source current pulsed; tp ≤ 10 µs; Tsp = 25 °C - 30 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-sourceavalanche energy

ID = 6 A; Vsup ≤ 55 V; RGS = 50 Ω;VGS = 5 V; Tj(init) = 25 °C; unclamped

- 36 mJ

EDS(AL)R repetitive drain-sourceavalanche energy

Fig. 4 [1][2][3][4]- - J

[1] Maximum value not quoted. Repetitive rating defined in avalanche rating figure.[2] Single-pulse avalanche rating limited by maximum junction temperature of 150 °C.[3] Repetitive avalanche rating limited by an average junction temperature of 145 °C.[4] Refer to application note AN10273 for further information.

Tsp (°C)0 20015050 100

03aa17

40

80

120

Pder(%)

0

Fig. 1. Normalized total power dissipation as afunction of solder point temperature

003aab787

0

2

4

6

8

0 50 100 150 200Tsp (°C)

ID(A)

Fig. 2. Continuous drain current as a function of solderpoint temperature

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Nexperia BUK9880-55AN-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 4 / 13

03nc54

10-2

10-1

1

10

102

103

10-1 1 10 102

VDS (V)

ID(A)

DC

100 ms

10 ms

RDSon = VDS / ID

1 ms

tp = 10 µs

100 µs

tpT

P

t

tpT

δ =

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

003aab771

10-2

10-1

1

10

10-3 10-2 10-1 1 10tAL (ms)

IAL

(A) (1)

(2)

(3)

Fig. 4. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time.

9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistancefrom junction to solderpoint

- - 15 K/W

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9880-55AN-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 5 / 13

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistancefrom junction toambient

Fig. 5 - 120 - K/W

03nc55

Single Shot

0.20.10.05

0.02

10-2

10-1

1

10

102

10-6 10-5 10-4 10-3 10-2 10-1 1 10 102tp (s)

Zth(j-sp)

(K/W)

δ = 0.5

tpT

P

t

tpT

δ =

Fig. 5. Transient thermal impedance from junction to solder point as a function of pulse duration

10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 50 - - VV(BR)DSS drain-sourcebreakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 55 - - V

ID = 1 mA; VDS = VGS; Tj = 25 °C;Fig. 12; Fig. 8

1 1.5 2 V

ID = 1 mA; VDS = VGS; Tj = 150 °C;Fig. 12; Fig. 8

0.6 - - V

VGS(th) gate-source thresholdvoltage

ID = 1 mA; VDS = VGS; Tj = -55 °C;Fig. 12; Fig. 8

- - 2.3 V

VDS = 55 V; VGS = 0 V; Tj = 150 °C - - 500 µAIDSS drain leakage current

VDS = 55 V; VGS = 0 V; Tj = 25 °C - 0.05 10 µA

VGS = 10 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current

VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

VGS = 5 V; ID = 8 A; Tj = 150 °C;Fig. 13; Fig. 14

- - 147 mΩ

VGS = 10 V; ID = 8 A; Tj = 25 °C - 62 73 mΩ

RDSon drain-source on-stateresistance

VGS = 4.5 V; ID = 8 A; Tj = 25 °C - - 89 mΩ

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9880-55AN-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 6 / 13

Symbol Parameter Conditions Min Typ Max Unit

VGS = 5 V; ID = 8 A; Tj = 25 °C; Fig. 13;Fig. 14

- 68 80 mΩ

Dynamic characteristics

QG(tot) total gate charge - 11 - nC

QGS gate-source charge

ID = 10 A; VDS = 44 V; VGS = 5 V;Fig. 11 - 1.6 - nC

QGD gate-drain charge ID = 10 A; VDS = 44 V; VGS = 5 V;Fig. 15

- 4.6 - nC

Ciss input capacitance - 438 584 pF

Coss output capacitance - 87 104 pF

Crss reverse transfercapacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;Tj = 25 °C; Fig. 16

- 62 85 pF

td(on) turn-on delay time - 8 - ns

tr rise time - 118 - ns

td(off) turn-off delay time - 20 - ns

tf fall time

VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;RG(ext) = 10 Ω; Tj = 25 °C

- 32 - ns

Source-drain diode

VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.85 1.2 V

trr reverse recovery time - 33 - ns

Qr recovered charge

IS = 20 A; dIS/dt = -100 A/µs;VGS = -10 V; VDS = 30 V; Tj = 25 °C - 60 - nC

03nc51

0

20

40

60

0 2 4 6 8 10VDS (V)

ID(A)

VGS (V) = 10

2.2

3

4

5

67

3.4

2.4

Fig. 6. Output characteristics: drain current as afunction of drain-source voltage; typical values

03nc50

40

60

80

2 4 6 8 10VGS (V)

RDSon

(mΩ)

Fig. 7. Drain-source on-state resistance as a functionof gate-source voltage; typical values

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Nexperia BUK9880-55AN-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 7 / 13

03aa36

10-6

10-5

10-4

10-3

10-2

10-1

0 1 2 3VGS (V)

ID(A)

maxtypmin

Tj = 25 °C; VDS = 5 V

Fig. 8. Sub-threshold drain current as a function ofgate-source voltage

03nc48

0

2

4

6

8

10

12

0 5 10 15 20ID (A)

gfs

(S)

Fig. 9. Forward transconductance as a function ofdrain current; typical values

03nc49

0

5

10

15

0 1 2 3 4VGS (V)

ID(A)

Tj = 150 °C

Tj = 25 °C

Fig. 10. Transfer characteristics: drain current as afunction of gate-source voltage; typical values

03nc47

0

1

2

3

4

5

0 5 10 15QG (nC)

VGS

(V)

VDS = 44 V

VDS = 14 V

Fig. 11. Gate-source voltage as a function of turn-ongate charge; typical values

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9880-55AN-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 8 / 13

03aa33

0

0.5

1

1.5

2

2.5

-60 0 60 120 180Tj (°C)

VGS(th)

(V)

max

typ

min

Fig. 12. Gate-source threshold voltage as a function ofjunction temperature

03nc52

0

30

60

90

120

150

180

0 10 20 30 40ID (A)

RDSon

(mΩ)VGS (V) = 5

43.83.63.43.23

Fig. 13. Drain-source on-state resistance as a functionof drain current; typical values

03nc24

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-60 -20 20 60 100 140 180Tj (°C)

a

Fig. 14. Normalized drain source on-state resistancefactor as a function of junction temperature

03nc37

0

1

2

3

4

5

0 10 20 30QG (nC)

VGS(V)

VDD = 44 V

VDD = 14 V

Fig. 15. Gate-source voltage as a function of turn-ongate charge; typical values

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9880-55AN-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 9 / 13

03nc53

0

200

400

600

800

1000

1200

10-2 10-1 1 10 102

VDS (V)

C(pF)

Ciss

Coss

Crss

Fig. 16. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues

03nc46

0

20

40

60

0.0 0.5 1.0 1.5 2.0VSD (V)

IS(A)

Tj = 150 °C

Tj = 25 °C

Fig. 17. Reverse diode current as a function of reversediode voltage; typical value

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9880-55AN-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 10 / 13

11. Package outline

UNIT A1 bp c D E e1 HE Lp Q ywv

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.100.01

1.81.5

0.800.60

b1

3.12.9

0.320.22

6.76.3

3.73.3 2.3

e

4.6 7.36.7

1.10.7

0.950.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 04-11-1006-03-16

w Mbp

D

b1

e1

e

A

A1

Lp

Q

detail X

HE

E

v M A

AB

B

c

y

0 2 4 mm

scale

A

X

1 32

4

Plastic surface-mounted package with increased heatsink; 4 leads SOT223

Fig. 18. Package outline SC-73 (SOT223)

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Nexperia BUK9880-55AN-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 11 / 13

12. Legal information

12.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

12.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.

12.3 DisclaimersLimited warranty and liability — Information in this document is believedto be accurate and reliable. However, Nexperia does not giveany representations or warranties, expressed or implied, as to the accuracyor completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an informationsource outside of Nexperia.

In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

Notwithstanding any damages that customer might incur for any reasonwhatsoever, Nexperia’s aggregate and cumulative liability towardscustomer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.

Suitability for use in automotive applications — This Nexperiaproduct has been qualified for use in automotiveapplications. Unless otherwise agreed in writing, the product is not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's ownrisk.

Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.

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Nexperia BUK9880-55AN-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 12 / 13

No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or thegrant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.

Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from competent authorities.

Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

12.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9880-55AN-channel TrenchMOS logic level FET

BUK9880-55A All information provided in this document is subject to legal disclaimers.

Product data sheet 19 March 2014 13 / 13

13. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................29 Thermal characteristics .........................................410 Characteristics .......................................................511 Package outline ................................................... 1012 Legal information .................................................1112.1 Data sheet status ............................................... 1112.2 Definitions ...........................................................1112.3 Disclaimers .........................................................1112.4 Trademarks ........................................................ 12

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 19 March 2014