An in-depth study of the I-LGAD sensor...2018/02/19 · An in-depth study of the I-LGAD sensor...
Transcript of An in-depth study of the I-LGAD sensor...2018/02/19 · An in-depth study of the I-LGAD sensor...
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An in-depth study of the I-LGAD sensor
Iván Vila Álvarez.
Instituto de Física de Cantabria (CSIC-UC)
13th Trento Workshop
MPP, Munich, February 20th, 2018
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The Team
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E. Currás, J. Duarte, M. Fernández, A. García, G. Gómez, J. González, R. Jaramillo, D. Moya,
R. Palomo(1), I. Vila.
Instituto de Física de Cantabria(CSIC-UC) (1) Universidad de Sevilla
M. Moll, M. Centis Vignale, S. Otero Ugobono.
CERN
M. Carulla, D. Flores, S. Hidalgo, A. Merlos, G. Pellegrini, D. Quirion.
IMB-CNM (CSIC)
Developed inside the RD50 collaboration & AIDA -2020 WP7 on Advanced Hybrid Detectors.
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Outline
— I-LGAD basics
— Gain spatial uniformity (fill factor)
— Tracking performance
— Timing performance
— Conclusions and outlook
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I-LGAD basics: a 4th dimensional tracking sensor
Ivan Vila - 13th Trento Meeting, MPP, Munich 2018
Multiplication layer divided into strip Multiplication layer extended over the electrode Collects negative carriers (e) Collects positive carriers (h) Simple single side process Complex double side process
I-LG
AD b
asics
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I-LGAD basics: multiplication footprint
— Distinct signature of signal amplification: cathode illumination with red laser
— Injections of electron into the cathode, resulting transient current is a sequential contribution of primary electrons reaching the amplification layer and secondary holes drifting towards the anode.
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Cu
rren
t (a
.u)
Primary electrons current
Secondary holes
current
Multiplication onset
PAD-like LGAD Strip-like I-LGAD
I-LG
AD b
asics
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Gain Spatial Uniformity: the fill factor issue — Conventional LGAD: multiplication layer interspace presents
reduced/suppressed gain.
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I-LG
AD f
ill fac
tor
— I-LGAD: non-segmented multiplication layer should present uniform gain.
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Gain Spatial Uniformity: Validation with MIPs
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I-LG
AD f
ill fac
tor
AIDA-2020 WP7 Setup AKA as Atlas ITK setup (2016, 2017)
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Strip LGAD
I-LGAD (8533W1K05T, 45 strips 160 um, non-irradiated)
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Gain Spatial Uniformity: Collected Charge
I-LG
AD f
ill fac
tor
0
20
40
60
80
100
0 100 200 300 400 500
Carga en función del voltaje
Test Beam 2017
Test Beam
Q / k
e-
V / V
0
10
20
30
40
50
60
70
80
80 100 120 140 160 180 200 220
Charge dependence with voltage
for a LGAD at Test Beam
Q(Peak 1) / ke-Q(Peak 2) / ke-
Q / k
e-
V / V
LGAD
i-LGAD
Standard PIN
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Gain Spatial Uniformity: Gain vs. Hit position (1) — Dependence of the Signal-to-Noise Ratio with the “fractional
position” for cluster of size two.
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I-LG
AD f
ill fac
tor
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Gain Spatial Uniformity: Gain vs. Hit position (2)
LGAD Strip
i-LGAD Strip
100 Volt bias
400 Volt bias
Artifact due to front-end saturation
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I-LG
AD f
ill fac
tor
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Tracking performance: Reference strip sensor
— Challenges: _ Difficult synchronization between Alibava daq (x3) and Eudaq.
_ Saturation of the Alibava ADC.
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I-LG
AD t
rack
iing
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Tracking performance: I-LGAD strip sensor
— Hit resolution biased by saturation of the Alibava ADC ?
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I-LG
AD t
rack
iing
STANDARD
I-LGAD
I-LGAD
STANDARD I-LGAD
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Set-up for timing characterization and DUT
— Time standard: constant time interval between two picosecond IR laser pulses (1060 nm)
— Fixed time interval between laser pulses generated by optical splitting and delayed recombination of a single laser pulse.
Ivan Vila - 13th Trento Meeting, MPP, Munich 2018
Laser diode Isolator Splitter
Delay Line Combiner DUT
45 strips Pitch 160 mm
I-LG
AD T
imin
g
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Set-up for timing characterization and DUT (2)
— Signal amplified (60db, miteq 1660) & digitized (20Gs)
— Acquired averaged waveform from I-LGAD with a time interval of 52.23 ns between pulses.
I-LG
AD T
imin
g
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Parameter extraction of the waveform.
Ivan Vila - 13th Trento Meeting, MPP, Munich 2018
— Single-shot (non-averaged) superposition of signals
— For each shot measured: Rise time, Signal amplitude and noise.
— Signal estimation as the charge under the transient waveform
— Noise estimation as the RMS of charge ( from the first 20ns of the waveform)
20 ns SNR ≡𝑺𝒊𝒈𝒏𝒂𝒍 𝑪𝒉𝒂𝒓𝒈𝒆
𝝈
𝝈 ≡ 𝑹𝑴𝑺 (𝑪𝒉𝒂𝒓𝒈𝒆 𝒃𝒂𝒔𝒆𝒍𝒊𝒏𝒆)
Waveform section from where the baseline noise is estimated I-LG
AD T
imin
g
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Range for computing the pulse charge
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I-LGAD Timing error estimation
— For each Bias voltage five thousand waveform acquired.
— The timing error σDt estimated from the width (sigma) of the distribution of the measured time intervals (Dt)
— Assuming timing errors similar for both pulses then σt for I-LGAD is given by σDt / √2 (quadratic sum of errors)
Ivan Vila - 13th Trento Meeting, MPP, Munich 2018
Vbias [V]
Rise Time
1 [ps]
Rise Time
2 [ps]
Vp1 [V]
Vp2 [V]
σbaseline [au]
SNR1
SNR2 Charge 1 [u. a.]
Charge 2 [u. a.]
Dt [ns]
σDt/√2 [ps]
700 334 357 1.105 1.034 13.5 20.6 19.41 279.0 262.0 52.23 25.45
600 326 327 0.965 0.905 14.8 17.02 15.99 252.0 236.6 52.23 26.87
500 330 327 0.815 0.762 14.8 16.0 14.97 237.0 221.6 52.23 27.58
400 357 353 0.677 0.631 14.4 14.3 13.34 206.0 192.1 52.23 31.82
300 357 355 0.526 0.496 15.1 11.5 10.77 174.8 162.6 52.23 37.48
200 354 358 0.370 0.347 14.6 9.5 8.63 139.0 126.0 52.23 46.67
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Time error dependence with the SNR
Ivan Vila - 13th Trento Meeting, MPP, Munich 2018
I-LG
AD T
imin
g
Expected time error dependence with SNR
σt ∝rise time
SNR
Defining the effective SNR as
𝑆𝑁𝑅𝑒𝑓𝑓 ≡ 𝑆𝑁𝑅1𝑆𝑁𝑅2 𝑆𝑁𝑅12 + 𝑆𝑁𝑅2
2
σΔt2 = σt1
2 + σt22 σ∆t ∝
1
𝑆𝑁𝑅𝑒𝑓𝑓
σ∆t/
2 [𝑛𝑠]
1/𝑆𝑁𝑅𝑒𝑓𝑓
47 ps @ SNR ≅ 10
25 ps @ SNR ≅ 20
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Summary and Outlook
— In-depth characterization of p-in-p LGAD (I-LGAD): fill factor, tracking & timing.
— Very promising candidate to become a true 4th dimensional tracking technology.
— Medium term activities:
_ Testing: Timing spatial uniformity.
_ Manufacturing: Thin-sensors (AIDA-2020), different segmented geometries.
_ Radiation tolerance (both to dose and displacement)…
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… a particular case concerning radiation tolerance.
— The layout of the proposed LHC timing detectors: a mosaic of mini-pads (elements with area of few mm2)
— A pad-like LGAD is also a pad-like I-LGAD therefore they exhibit the same radiation tolerance
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285 um
LGAD
I-LGAD
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THANK YOU FOR YOUR ATTENTION
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