2N3819 SILICON N-CHANNEL JFET N-Channel JFET designed for … · 2018-12-17 · 2N3819 SILICON...

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2N3819 SILICON N-CHANNEL JFET The CENTRAL SEMICONDUCTOR 2N3819 is a silicon N-Channel JFET designed for RF amplifier and mixer applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (T A =25°C) SYMBOL UNITS Drain-Gate Voltage V DG 25 V Drain-Source Voltage V DS 25 V Gate-Source Voltage V GS 25 V Continuous Gate Current I G 10 mA Power Dissipation P D 360 mW Operating and Storage Junction Temperature T J , T stg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS I GSS V GS =15V 2.0 nA I GSS V GS =15V, T A =100°C 2.0 μA I DSS V DS =15V 2.0 20 mA BV GSS I G =1.0μA 25 V V GS(OFF) V DS =15V, I D =2.0nA 8.0 V V GS V DS =15V, I D =200μA 0.5 7.5 V |Y fs | V DS =15V, V GS =0, f=1.0MHz 2.0 6.5 mS |Y fs | V DS =15V, V GS =0, f=100MHz 1.6 mS |Y os | V DS =15V, V GS =0, f=1.0kHz 50 μS C iss V DS =15V, V GS =0, f=1.0MHz 8.0 pF C rss V DS =15V, V GS =0, f=1.0MHz 4.0 pF TO-92 CASE R1 (9-January 2014) www.centralsemi.com

Transcript of 2N3819 SILICON N-CHANNEL JFET N-Channel JFET designed for … · 2018-12-17 · 2N3819 SILICON...

Page 1: 2N3819 SILICON N-CHANNEL JFET N-Channel JFET designed for … · 2018-12-17 · 2N3819 SILICON N-CHANNEL JFET The CENTRAL SEMICONDUCTOR 2N3819 is a silicon N-Channel JFET designed

2N3819

SILICON

N-CHANNEL JFETThe CENTRAL SEMICONDUCTOR 2N3819 is a silicon N-Channel JFET designed for RF amplifier and mixer applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS

Drain-Gate Voltage VDG 25 V

Drain-Source Voltage VDS 25 V

Gate-Source Voltage VGS 25 V

Continuous Gate Current IG 10 mA

Power Dissipation PD 360 mW

Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)SYMBOL TEST CONDITIONS MIN MAX UNITS

IGSS VGS=15V 2.0 nA

IGSS VGS=15V, TA=100°C 2.0 μA

IDSS VDS=15V 2.0 20 mA

BVGSS IG=1.0μA 25 V

VGS(OFF) VDS=15V, ID=2.0nA 8.0 V

VGS VDS=15V, ID=200μA 0.5 7.5 V

|Yfs| VDS=15V, VGS=0, f=1.0MHz 2.0 6.5 mS

|Yfs| VDS=15V, VGS=0, f=100MHz 1.6 mS

|Yos| VDS=15V, VGS=0, f=1.0kHz 50 μS

Ciss VDS=15V, VGS=0, f=1.0MHz 8.0 pF

Crss VDS=15V, VGS=0, f=1.0MHz 4.0 pF

TO-92 CASE

R1 (9-January 2014)

www.centra lsemi .com

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2N3819

SILICON

N-CHANNEL JFET

LEAD CODE:

1) Drain2) Gate3) Source

MARKING:

FULL PART NUMBER

TO-92 CASE - MECHANICAL OUTLINE

TYPICAL ELECTRICAL CHARACTERISTICS

www.centra lsemi .com

R1 (9-January 2014)

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2N3819

SILICON

N-CHANNEL JFET

R1 (9-January 2014)

www.centra lsemi .com

Page 4: 2N3819 SILICON N-CHANNEL JFET N-Channel JFET designed for … · 2018-12-17 · 2N3819 SILICON N-CHANNEL JFET The CENTRAL SEMICONDUCTOR 2N3819 is a silicon N-Channel JFET designed

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