EECS277A, Fall 2014 Code 18480

Graduate Course, 4 units

Advanced Semiconductor Devices I

Catalog Data Advanced complementary metal-oxide-semiconductor field-effect

transistors (CMOSFET), device scaling, device modeling and fabrication,

equivalent circuits, and their applications for digital, analog, RF.

Prerequisite: EECS174. (Note by instructor: The prerequisite of

EECS174 is EECS170A which has EECS70A as one of its

prerequisites).

Textbook Fundamentals of Mordern VLSI Devices, 2nd edition, 2009, Yuan Taur and

Tak H. Ning, 2010, Cambridge University Press, New York

(Important note by instructor: Electronic version cannot be

used in examinations which will be open books. The reason

is that PCs are prohibited in examinations. You will need

the textbook to solve examination problems. Paper copy of

electronic version is allowed in the examinations. ).

Reference Books Physics of Semiconductor Devices, 2nd edition, 1981, S. M. Sze, John

Wiley and Sons, New York

Semiconductor Device Fundamentals, latest edition, Robert F. Pierret,

Addison-Wesley Publishing Company, New York

Course Outline 1. Introduction: Category of all semiconductor devices, transistor logic

family, scaling with Lg, CMOS IC trsnsistor structure, bipolar IC

transnstor structure

2. Basic device physics (Chap. 2): charge carriers, p-n junctions, MOS,

high field effects

3. MOSFET devices (Chap. 3)

4. CMOS device design (Chap. 4)

5. CMOS digital circuits and performance factors (Chap. 5)

6. CMOS process flow (Appendix 1)

Instructor Chin C. Lee

Professor of Electrical Engineering and Computer Science

2226 Engineering Gateway

Tel: (949)824-7462, email: cclee@uci.edu

Class Hours M & W: 4:00 - 5:20pm

Classroom RH114

Office Hours M & W: 10:00am - 12:00noon

Grading Homeworks 15%

Components First midterm exam. (Oct.. 29, Wednesday, 4:00-5:20pm) 25%

Second midterm exam. (Nov. 14, Friday, 4:00-5:20pm) 25%

Final examination (Dec. 17, Wednesday, 4:00-6:00pm) 35%