1Confidential Proprietary MV MOSFETs Customer Presentation Hyper Device Division MOS Device BU Apr...

1 Confidential Proprietary

MV MOSFETsCustomer Presentation

Hyper Device Division

MOS Device BU

Apr 2014


Middle Voltage MOSFET

• Target application– Multi cells Li-ion battery protection– Motor– Primary side switch– Secondary side switch

• End Products– ESS(Energy Storage System)– Power tool– E-bike– Power supply


Application of Multi-Cells Battery

Energy Storage System and Electric Bike. etc

Example : Multi-Cells Application

Solar panel

Lithium-ion Energy Storage System

Energy BusSystem[Charge System]

Protection IC LV5117AV

Cel

l bal

anci

ng

Driv

er

Detection Delay

Shutdown Control

Ba

tte

ry C

ell

s

Gate Driv

e

Pch High Side Switches

+

-

Ch

arg

er

LO

AD

AFE LC824301

Cel

l bal

anci

ng

Driv

er

Charge Pump circuit

Shutdown Control

Ba

tte

ry C

ell

s

Nch High Side Switches

+

-

Ch

arg

er

LO

ADUse of efficiency energy

of a solar panel.Efficiency use of natural energy and storage systems.


Application of E-Bike and P-Tool

TO-220TO-220F

TO-263ATPAK

Cel

l bal

anci

ng

Driv

er

Charge Pump circuit

Shutdown Control

Ba

tte

ry C

ell

s

Nch High Side Switches

+

-

Ch

arg

er

LO

AD

Controller

Driver Driver Driver

Vin

Nch-3phase Motor Drive Circuit

M

Motor

Battery

Motor

Battery


Selection guide for Multi Cells Li-ion battery

End product Number of cells

In series

Conventional electrode such as

Li-Co, Li-Mn.Maximum Cell Voltage:4.2V

LiFePO, new type of electrode.

Maximum cell voltage:3.6V

Recommended VDSS Voltage

Power tools 3 Cells 12.6V 10.8V 20V~30V



Electric bikes & tools 7 Cells 29.4V 25.2V 50V~60V

Electric bikes & tools 10 Cells 42.0V 36.0V 60V~75V

Electric bikes 13 Cells 54.6V 46.8V 75V ~90V

Electric bikes 14 Cells 58.8V 50.4V 75V~100V

Electric bikes 16 cells -- 57.6V 75V~100V

“Maximum cell voltage“ indicates the battery voltage according to the number of cells.“Recommended VDSS Voltage” indicates the required VDSS voltage of the FET depending on the number of cells.The maximum cell voltage varies depending on its positive electrode materials, so the recommended voltage also varies.


LV5117AV

5 cells to　 14 cells

Pch Hi-Side System[5 cells to 14 cells]･ BBS3002 60 V 100 A 　　 RDS(on) 4.4mohm･ ATP304 60 V 100 A RDS(on) 5.0mohm･ SMP3003 75 V 100 A RDS(on) 6.2mohm

*RDS(on) is typical value

Middle voltage and small size FETs6HN04CHA*/6HP04CHA* (Nch/Pch60V)CPH3462*/CPH3362*(Nch/Pch100V1A)

P channel Application for 5 cells to 14 cells

　 *Under development


LC05130JA

5 cells to 14 cells

Nch Hi-Side System[5 cells to 14 cells]･ NDBA170N06A 　 60 V 　 170 A　　　　 RDS(on) 2.5 mohm･ ATP401 60 V 100 A　　　　 RDS(on) 2.8 mohm･ NDAT070N10B 100 V 70 A RDS(on) 10.4 mohm･ NDAT100N10B 100 V 100 A　　　　 RDS(on) 6.4 mohm

*RDS(on) is typical value

FETs for cell balance･ 3LN01SS 　 Nch 30 V

N channel Application for 5 cells to 14 cells


~30A

~20A

~10A

~5A

~3A

VDSS

Wafer Tech.

--- --- ATP613(Nch)

BFL4007(Nch)

H4/UHV NchIGBT

100-250V60-100V

T2&T4 Pch / Nch T2&SSG5 Pch / Nch

500-900V

ATP113(Pch)ATP213(Nch)

ATP301(Pch)ATP405(Nch)

Home electronics100-220V

BFL4001(Nch) / BFL4004(Nch)WPB4001(Nch) /WPB4002(Nch)

NGTB10N60FG(IGBT)

NGTB30N60L2WG(IGBT)

BBS3002(Pch)NDBA170N06A(Nch)

SMP3003(Pch)NDBA180N10B(Nch)

ATP304(Pch)ATP302(Pch)ATP401(Nch)ATP404(Nch)

Motor24/36V

Motor48V

Motor current

App.

Device Map for Motor(inverter)


40

80

140

VDSS (V)

120

100

|

　|

　

|

　

|

　

|

　

| 　

|

60

160

MV MOSFETs Portfolio Roadmap

Production

Development

Planning

T2 SeriesPch & Nch

100 V75 V60 V

SSG5Nch

100 V

SSG5Nch80 V

SSG5Nch250V200V150V

T4 SeriesPch & Nch

90 V75 V60 V40 V30 V

| | | |Now

20152012 2013 2014 CY

http://imagesrvr.onsemi.com/enduser-lr/pages/Wafer1-02.htm


ATPAK Features

D2PAK ATPAK

Wire Bonding Clip BondingClip Bonding

Clip Bonding Tech.

Mount area:50% smaller

Volume: 80% reduced Height: 65% reduced

Clip bond structure helps realize:・ The industry’s largest rated current 100A ： equivalent to D2PAK (TO-263)・ 1.5 ｍｍ package thickness・ PD 4.5W with heat sink installed

SOIC8SOIC8

DPAKDPAK

ATPAKATPAK

D2PAKD2PAK

D2PAK=13.4x10.0x4.5mm 　ATPAK=9.5x6.5x1.5mm

Package size.


Heat Simulation

Heat Simulation 　 BBS3002 and ATP304

Thickness ：1mm

VGS=

-10V

ID=20ATest CircuitCondition VGS=-10V ID=20A Ta=25℃

68mm

TEST Board40mm

ATPAKMount areaD2PAKMount area

Because of the structure of heat dissipation in the entire Pkg, ATPAK release the heat from surface. (Higher than D2PAK even if the same channel temperature).It can reduce the heat effectively in the same mount area by using a parallel to ATPAK.　 *Tch:Simulation result, Ta=25℃

BBS3002(D2PAK) 60V/4.4mΩ

ATP304 　 (ATPAK)60V/5.0mΩ

ATP304/BBS3002 比較

D2PAK1 parallel

Mount area152mm2

ATPAK1 parallelMount area 155mm2

Area rate ： 47%RDSON ： 0.3mΩ upTch ： 8.4℃ up

Comparison of D2PAK1 and ATPAK 2parallArea rate ： 102%RDSON ： 1.9mΩ downTch ： 27℃ down

D2PAK2 parallels

Mount area 333mm2

ATPAK3parallelsMount area 243mm2

Area rate ： 47%RDSON ： 0.2mΩ upTch ： 6.0℃ up

Comparison of D2PAK2 and ATPAK 3parallelArea rate ： 73%RDSON ： 0.5mΩ downTch ： 4.5℃ down

RDSON ： 2.2mΩTch ：48.7℃ ,⊿T=23.7℃

RDSON ： 2.5mΩTch ：56.0℃ ,⊿T=31.0℃

RDSON ： 1.7mΩTch ：44.2℃ ,⊿T=19.2℃

t=4.5mm

RDSON ： 4.4mΩTch ：83.5℃,⊿T=58.5℃

Heat radiation from Drain to Board.

Heat radiation using surface of the device.

D2PAK ATPAK

Tch 　measurement point


ATPAK Power Dissipation : Recommended radiating method

＊ PD is more doubled by mounting a heat sink!

＊ PD is same as that of TO- 220, mounting a heat sink which is 30% less than that of TO-220!

＊ It makes possible ultra- thin mounting!

＊ PD is more doubled by mounting a heat sink!

＊ PD is same as that of TO- 220, mounting a heat sink which is 30% less than that of TO-220!

＊ It makes possible ultra- thin mounting!

PD-AL heat-sink area (Ta=25℃ )

AL heat-sink area – mm2

No heat-sink

ATPAK

and Al heat-sink

TO-220+AL heat-sink

ATPAK

(No heat-sink)

ATPAK(No heat-sink)

ATPAK And Cu heat-sink

ATPAK+AL heat-sinkTO-220+AL heat-sink

Screw Clamping torque Axial force

M3 0.2~0.8N ・ m 0.33~1.33N


ATPAK Position Map

1

10

100

P-ch 60V ATPAK(DPAK) Position Map

ON SemiFairchildInfineonRenesasSTToshiba

RDS(

on) m

Ohm

ON Semi Fairchild Infineon Renesas ST Toshiba

・ The industry’s highest performance in Pch DPAK size products ・ Have lineup suitable for many applications


ATPAK Pch-MOSFET Series

Typ Max Typ Max

V V A pF nC Sample RTM

ATP101 -25 23 30 36 51 875 18.5 Now Now

ATP102 -40 14 18.5 22 31 1,490 34 Q4-2014 Q4-2014

ATP103 -55 10 13 14.5 20.5 2,430 47

ATP104 -75 6.4 8.4 9.6 13.5 3,950 76

ATP106 -30 19 25 29 41 1,380 29

ATP107 -50 13 17 18.5 26 2,400 47

ATP108 -70 8 10.4 11.5 16.5 3,850 79.5

ATP112 -25 33 43 40 56 1,450 33.5

ATP113 -35 22.5 29.5 27 38 2,400 55 J un-2014 Q3-2014

ATP114 -55 12 16 15 21 4,000 92 Now Now

ATP302 -70 10 13 13 18 5,400 115 J un-2014 Q3-2014

ATP304 -100 5 6.5 6.4 8.9 11,400 240

ATP301 -100 ±20 -28 57 75 - - 4,000 73Now Now

Now Now

mΩ mΩ

Ciss QgVGS=10V VGS=4.5V

RDS(on)

SchedulePartNumber

VDSS VGSS ID

-40

-60

-30 ±20

±20

±20

• Products Offering & Schedule

ON target

ON target

ON target

ON target

ON target

ON target

ON target

ON target

ON target

ON target


ATPAK Nch-MOSFET Series

Typ Max Typ Max

V V A pF nC Sample RTM Sample RTM

ATP201 35 13 17 23 33 985 17 Q4- 2014 Q4- 2014

ATP202 50 9 12 14 20 1,650 27 Now Now

ATP203 75 6.3 8.2 9.5 13.5 2,750 44

ATP204 100 4.3 5.6 6.5 9.1 4,800 72

ATP218 100 - - 2.9 3.8 6,600 70 Q4- 2014 Q4- 2014

ATP206 40 12 16 20 28 1,630 27

ATP207 65 7 9.1 11 15.5 2,710 54

ATP208 90 4.6 6 6.6 9.3 4,510 83 Now Now

ATP216 35 - - 17 23 2,700 30 Q4- 2014 Q4- 2014

ATP212 35 17 23 23 33 1,820 34.5 Q3- 2014 Q3- 2014

ATP213 50 12 16 15 21 3,150 58

ATP214 75 6.2 8.1 8.2 11.5 4,850 96

ATP404 95 5.5 7.2 7.5 10.5 6,400 120 - -

ATP401 100 2.8 3.7 3.7 5.2 14500 260 - -

ATP405 40 25 33 - - 4,000 68 - -

NDAT070N10B 70 8.6 10.4 - - 1900 26 - -

NDAT100N10B 100 5.3 6.4 - - 2900 40 - -

ATP613 500 ± 30 5.5 1.55Ω 2.0Ω - - 350 13.8 Now Now Q3- 2014 Q4- 2014

ATP602 600 ± 30 5 2.1Ω 2.7Ω - - 350 13.6 Now Now Q3- 2014 Q3- 2014

J ul- 2014± 20100

mΩ mΩ

± 20

Q4- 2014

Schedule

Current Fab New Fab

Now

Now NowQ4- 2014 Q4- 2014

Q4- 2014

Now NowQ4- 2014

Q4- 2014

Now

Now

Q4- 2014

PartNumber

40

60

30 ± 20

VDSS VGSS

± 20

QgVGS=10VID VGS=4.5V Ciss

Now

RDS(on)



Typ Max

V V A pF nC Sample RTM Sample RTM

2SK4066-DL 100 3.6 4.7 12,500 220 Now Now

NDBA170N06A 170 2.5 3.3 15,800 280 - -

2SK4065 75 100 4.6 6 12,200 220 Now Now Q3-2014 Q4-2014

NDBA070N10B 70 8.7 10.5 1,900 26 - -

NDBA100N10B 100 5.3 6.4 2,900 40 - -

NDBA180N10B 180 2.5 3.0 6,950 95 - - Jul-2014

BBS3002 -60 -100 4.4 5.8 13,200 280 - -

SMP3003 -75 -100 6.2 8 13,400 280 - -Now

100

Nch

Q4-2014Jun-2014

Now Now

NowPch

±20

Current Fab New Fab

Schedule

60

Ciss QgVGS=10VPartNumber

VGSS ID

RDS(on)

mΩ

VDSSPolarity

TO-263(D2PAK) MOSFET Series



Typ Max

V V V A pF nC Sample RTM Sample RTM

BXL4004 40 100 3 3.9 8,200 140 - - May-2014 Q3-2014

2SK4094 100 3.8 5 12,200 220 Now Now Now

NDPL170N06A 170 2.7 3.5 17,100 315 - - May-2014

NDPL070N10B 70 9.0 10.8 1,900 26 - -

NDPL100N10B 100 5.6 6.8 2,900 40 - -

NDPL180N10B 180 2.8 3.4 6,950 95 - - Jun-2014

BBL4001 60 74 4.7 6.1 6,900 135 - - Feb-2014

BMS3003 -60 -78 5 6.5 13,200 285 - -

BMS3004 -75 -68 6.5 8.5 13,400 300 - -

mΩ

PartNumber

Package VDSS IDPolarity

VDSS Ciss Qg

Schedule

VGS=10VCurrent Fab New Fab

RDS(on)

Q4-2014

Now

Nch

TO-220

Pch

TO-220F

100Jun-2014

60

±20

Now

Now

TO-220 and TO-220F MOSFET Series



TO-220F-3SG TO-220-3L

TO-263-2L TO-263 ATPAK

Packages


Key Question• VDSS Voltage• VGSS Voltage• RDS(on) at VGS xx V• Number of cells• Number of parallel FETs• N-Channel/P-Channel

Key Question• VDSS Voltage• VGSS Voltage• RDS(on) at VGS xx V• Number of cells• Number of parallel FETs• N-Channel/P-Channel

Key Things to ask your Customer

Applications/BusinessApplications/Business

product VDSS Voltage

VGSS Voltage

RDS(on) at VGS xx V

Number of cells

Number of parallel FETs

Channel Polarity comments

　　　　　　

　　　　　　　　　　　　　　　　　　　　　　　　　

Optional Question• Competitor Optional Question• Competitor

1Confidential Proprietary MV MOSFETs Customer Presentation Hyper Device Division MOS Device BU Apr...

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