Power Mosfets

7/27/2019 Power Mosfets

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PRODUCT GUIDE

2006-3

Power MOSFETs

h t t p : / / w w w . s e m i c o n . t o s h i b a . co . j p / e n g


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C O N T E N T S

1 Features and Structure .......................................................2

2 New Power MOSFET Products and Part Numbering Scheme ....3

3 Selection Guide.............................................................4 to 74 Power MOSFET Characteristics

1. VS/PS Series .....................................................................8

2. STP Series ................................................................... .....9

3. TSSOP-8 Series ..............................................................10

4. TSSOP Advance Series...................................................11

5. SOP Series ................................................................... ...12

6. SOP Advance Series .......................................................14

7. U-MOSIII (Trench Type) Series .......................................15

8. High-Speed U-MOSIIISeries...........................................16

9. -MOSVII/-MOSVSeries ..............................................17 (VDSS = 100 to 250 V)

10. High-Speed -MOSV Series ..........................................18 (VDSS = 450 to 600 V)

11. -MOSIV/VI Series (VDSS = 450 to 900 V).........................19

12. -MOS Series..................................................................21

5 Power Modules ..................................................................25

6 Product Index.............................................................26 to 29

7 Superseded, Final-Phase and Discontinued Product List ...30 to 31

8 Package List ..............................................................32 to 39

Power MOSFETs

All power MOSFETs have the following features:1) No carrier storage effect; superior frequency and switching characteristics2) Ruggedness, no current concentration3) Voltage-controlled device, hence low drive power4) Easy parallel connection

Gate

Double-Diffusion Structure

Drain

n+

n+P P

n+

n

SourceGate

Trench Structure

Drain

n+

n+

P P

n+

n

Source

Features and Structure

q-MOSToshiba Power MOSFETs use a double-

diffusion MOS (D-MOS) structure, whichproduces high-withstand voltage, to form

channels. This structure is especially well

suited to high-withstand voltage and high-current devices.

A high level of integration yields a high-performance power MOSFET with low

ON-resistance and low power loss.

qU-MOSHigher channel density is

achieved by connectingchannels vertically to form

a U-groove at the gateregion, a structure that

yields a lower ON-

resistance than otherMOSFET structures.

s Structure of Toshiba Power MOSFETs

s Toshiba Power MOSFETs have the following additional features:

1) Guaranteed avalanche capability No absorber circuit required

2) Improved functioning of built-in diodes Greatly expanded circuit design possibilities

3) High ruggedness Better margin for circuit design

4) High-speed switching Higher speed in end products operation

5) Low R(DS)ON Reduced end products power consumption

6) Downsized packages Slimmer, more compact end products

7) Low drive loss Reduced end products power consumption

8) Zener diode between gate and source Improved electrostatic immunity between gate and source


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New Power MOSFET Products

Part Numbering Schemes Low-Voltage and Multi-Pin Series

The SOP Series products are compact and thin, and require only a smallmounting area. They are suitable for lithium-ion secondary batteryprotection and for notebook PCs.

SOP Series VDSS = 20 V to 60 V

The STP Series is housed in an ultra-small and slim package and issuitable for use in lithium-ion secondary battery protection circuits invarious portable electronic devices.

STP Series

Very compact and thin, the VS and PS Series products are suitable forvarious uses in portable electronic devices.

VS and PS Series VDSS = 12 V to 30 V

The -MOSIV/VI Series has a chip design optimized to reduce the Qgcharacteristic.

-MOSIV/VI Series VDSS = 450 V to 900 V

High-integration is achieved using a trench structure technique. Low-voltage driving (VGS = 4 V) is possible due to ultra-low ON-resistance.

U-MOSIII Series VDSS = 40 V to 100 V

Ultra-High-Speed U-MOSIIISeries VDSS = 60 V to 100 V

By employing submicron technology and reducing gate charge, thislatest series realizes extremely high speed and low RDS(ON).

-MOSVII/-MOSV Series VDSS = 100 V to 250 V

The new -MOSV High-Speed Series achieves higher switching speedthan the -MOSV Series, which is currently well established in the mar-ket. Two series are available: the High-Speed Switching Series and theHigh-Speed Diode Series

q Lithium-ion secondary battery protection circuitsq Notebook PCs q Portable electronic devicesq DC/DC converters

q Lithium-ion secondary battery protection circuits

q Cell phones q Notebook PCsq Portable electronic devices

sApplications

sApplications

sApplications

sApplications

sApplications

sApplications

sApplications

q DC/DC converters q Motor driversq Switching power supplies q AC adapters

q Motor drivers q Solenoids and lamp drivers

q Digital amps q DC/DC convertersq Motor drivers

sApplications

q Switching power supplies q AC adaptersq Motor drivers

q Inverters q AC adapters q Motor drivers

q Switching power supplies

High-Speed -MOSVSeries VDSS= 250 V to 600 V

Serial number of products

0: Single N-channel

1: Single P-channel

2: Dual N-channel

3: Dual P-channel

4: Dual N-channel and P-channel

A: N-channel and SBD

B: P-channel and SBD

J : P-channel and NPN

TPC6 0 01

TPC6: VS-6 Series

TPCF8: VS-8 Series

TPCP8: PS-8 Series

TPCS8: TSSOP-8 Series

TPCM8: TSSOP Advance Series

TPC8: SOP-8 Series

TPCA8: SOP Advance Series

TPCT4: STP Series

s New Medium- and High-Power Voltage Series

Additional information1: Low-capacitance type2: Fast body diode type

Voltage: 10% of the VDSSX

Current

TK: N-channelTJ: P-channel

PackageA: TO-220SISH: TO-3P(W)D: TO-220(W)N: PW-Mold (SMD)

SeriesA: -MOSIVC: -MOSVI

J:U-MOSIIIS: DT MOS

TK 10 A 60 S 1s Conventional Series

N-channel MOS

P-channel MOS

2SK

2SJ

New Power MOSFET Products

All products have a protection zener diode between gate and source. And the latest productsguarantee avalanche capability in both single and series power MOSFETs .

The new Ultra-High-Speed Trench Series realizes high speed and low ON-resistance and offers a VDSS of 60 V to 100 V and a 50% reduction in Qg-RDS(ON) trade-off (compared with conventional products). This series ofMOSFETs is housed in TO-220 packages, allowing them to be used forsecondary-side synchronous rectification of switching power supplies.

3


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Selection Guide

4

TPCF8A01(0.049)

TPCF8201(0.049)

TPCS8209(0.05)

TPCF8301(0.11)

VDSS(V)

ID(A)16 20 30 40

TPC8208(0.05)TPCS8209(0.03)

TPCS8210(0.03)

TPCS8302(0.035)

50 60 100 150 18

2SK2615(0.3)2SK2961(0.3)2SK3658(0.3)

2SJ681(0.17)2SJ378(0.19)

2SJ438(0.19)2SK2229(0.16)

2SK4033(0.1)

2SK2741(0.16)

2SK2201(0.35)2SK4018(0.35)

2SK2200(0.35)

2SJ338

2SK216

2SJ313

2SK201

TPC6107(0.055)

12

TPC6104(0.04)

TPCT4201(0.0255)

TPCP8402(0.077)

TPC6108(0.06)TPC8405(0.033)

1

1.31.71.81.9

2

2.5

2.1

2.7

3

3.5

3.4

3.2

4.5

5

5.5

7

7.2

7.5

8

8.5

9

6

6.5

4

4.2

0.5

4.7

5.6

2SK2963(0.7)

2SJ508(1.9)2SK2962(0.7)

2SJ509(1.9)

2SK3670(1.7)2SJ360(0.73)2SJ507(0.7)

2SK2989(0.15) 2SJ668(0.17) 2SK2399(0.23)2SK2400(0.23)

2SK3205(0.52)2SJ537(0.19)

2SJ669(0.17)

TPCP8402(0.072) TPCP8403(0.070)

TPCP8101(0.030)

TPCP8301(0.031)TPCP8302(0.033)

TPCP8403(0.040)

TPCP8202(0.023)

TPCF8402(0.077)TPCF8304(0.072)

TPCF8B01(0.11)

TPC6105(0.11)

TPC8401(0.038)TPC6103(0.035)

TPC8211(0.036)

TPC8104-H(0.065)

TPCS8303(0.021)

TPC8A01(0.018)

TPC8210(0.015)

TPC8021-H(0.017)

TPCA8009-H (0.35)

TPC8110(0.025)

TPCA8020-H(0.027)

2SK24672SJ440(

TPCF8302(0.059)TPCF8303(0.058)

TPCF8402(0.05)

TPCF8103(0.11)

TPCF8101 (0.028)

TPCF8001(0.023)

TPCP8001-H(0.016)

TPCP8002(0.0137)

TPCS8009-H(0.35)

TPCP8201(0.05)

TPCF8001(0.032)

TPC6004(0.024)

TPC8207(0.02)TPCS8211(0.024)TPCS8204(0.017)

TPCS8102(0.02)TPCS8302(0.035)TPCS8212(0.024)TPCS8208(0.017)

TPCS8213(0.013)

TPCF8102(0.030)

TPC8212-H(0.021)

TPC8209(0.04)

TPCT4202(0.038)TPC6003(0.024)

TPCP8J01(0.035)(-32V)

TPCS8214 (0.135)

TPCT4201 (0.031)TPC8405(0.026)

TPC8A01(0.025)

TPCF8104(0.028)

TPC6005(0.028)

P

2SK4017(0.1)

2SK4019(0.23)

PackageNew product

series

PW-Mini

TO-220NIS

TO-9

TO-2

VS-6 mPS-8 : -MOSIII

: -MOSV

: -MOSVI

: L2--MOSV

VS-8

SOP-8 Lead clamp

: L2--MOSVI

: U-MOS TO-220SISSOP Advance

: -MOSVII

: -MOSIV

STPLegend

TPC8406-H(0.027)TPC8406-H(0.03)

TPC8116-H (0.03)TPCA8107-H(0.03)

TPC8022-H(0.027)


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2SK3312(1.25) 2SK3761(1.25)

2SK3473(1.6)2SK3878(1.3)

200 250 400 450 500 600 700 800 900 1000

2SK3543(2.45)2SJ610(2.55)

CS8004-H(0.8)TPCS8008-H(0.58)

TPCA8008-H (0.58)

C8012-H(0.4)

VDSS(V)

ID(A)

1

1.31.71.81.9

2

2.5

2.7

2.1

3

3.5

3.4

3.2

4.5

4.7

5

5.5

5.6

7

7.2

7.5

8

8.5

9

6

6.5

4

4.2

0.52SK3302(18)2SK2998(20)

2SK3471(18)

2SK2845(9)2SK2733(9.0)

2SK3301(20)

2SK2718(6.4)

2SK2700(4.3)2SK2608(4.3)

2SK2719(4.3)2SK2883(3.6)2SK2603(3.6)

2SK3371(9)2SK3374(4.6)

K2992(3.5)

SJ407(1.0)SK2381(0.8)SK2835(0.8)SK2920(0.8)

2SK3863(1.5)

2SK3462(1.7)

2SK3342(1.0)

2SK2599(3.2)2SK3373(3.2)

2SK2862(3.2)

2SK2846(5.0)

2SK3067(5.0)2SK2865(5.0)

2SK2750(2.2)2SK3085(2.2)

CA8010-H(0.45)

2SK3766(2.45)

2SJ512(1.25)

2SJ516(0.8)

2SK2417(0.5)

2SK2662(1.5)2SK2661(1.5)2SK2991(1.5)

2SK3417(1.8)

2SK3466(1.5)

2SK3868(1.7)2SK3758(1.5)

2SK2274(1.7)

2SK1930(3.8)2SK1119(3.8)

2SK2838(1.2)

2SK2604(2.2)2SK2605(2.2)2SK2884(2.2)

2SK3879(1.7)2SK3880(1.7)

2SK2717(2.5)

2SK3700(2.5)

2SK1359(3.8)2SK3565(2.5)

2SK3742(2.5)

2SK4013(1.7) 2SK4014(2.0)

TK09H90A(1.3)

TK07H90A(2.0)

2SK2542(0.85)2SK2543(0.85)2SK2776(0.85)2SK3538(0.85)

2SK2952(0.55)K2350(0.4)

2SK2914(0.5)

2SK2544(1.25)2SK2545(1.25)2SK2602(1.25)

2SK2777(1.25)

2SK3633(1.7) 2SK2749(2.0)

2SK2613(1.7)

2SK1365(1.8)

2SK2847(1.4)2SK3799(1.3)

2SK3017(1.25)

2SK2606(1.2)

2SK2611(1.4)2SK2607(1.2)

2SK3316(1.8)

PCS8007-H(0.45)

2SK3563(1.5)

2SK3562(1.25)

2SK3947(1.4)

2SK3667(1.0)

[ 2SK4042(0.97)]2SK3561(0.85)

2SK3564(4.3)

2SK3567(2.2)

2SK3566(6.4)

2SK3798(3.5)

2SK3757(2.45)

2SK3767(4.5)

J680(2.0)

2SK4022(1.7)

2SK4021(1.0)

SK4020(0.8)

2SK4026(9)

2SK4003(2.2)2SK3975(2.2)

2SK4002(5)

J567(2.0)

2SK2679(1.2)

2SK3498(5.5)

2SK3472(4.6)

DPW-Mold

O-220(W) TO-3P(SM)TO-220FL/SM

TSSOP-8

TFP

SOP-8

TO-3P(N)ISTO-3P(N) TO-3P(W)TO-3P(L)

TPS P = P-chCN = Complementary N-chCP = Complementary P-ch

NS = N-ch + SBDPS = P-ch + SBD[ ] = Under development

PD = P-ch + Driver(load switch)

Notes:( ) = RDS(ON) max$ = 10-V drive# = 2.5-V drive

= 1.8-V drive= High-speed diode

N = N-ch

TSSOP AdvanceNew PW-Mold2New PW-Mold

2SK4023(4.6)


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Power MOSFET Characteristics

8

sFeatures Ultra-low ON-resistance achieved by employing the U-MOSIII process

Zener diode between gate and source for all products Thin package, with a height as low as 0.85 mm (max) when mounted on a board

sFeatures Ultra-low ON-resistance achieved by employing the U-MOSIII process Zener diode between gate and source for all products Thin package, with a height as low as 0.85 mm (max) when mounted on a board 32% mounting area reduction compared with the VS-6 (TSOP-6) Series, employing a

flat package with high cell density PD = 2.5 W @ t = 5 s when the device is mounted on a glass epoxy board

sFeatures Mounting area the same as the VS-6 (TSOP-6) Series Using flat leads and the latest U-MOS process (U-MOSIV), the VS-6 Series

offers a 70% RDS(ON) reduction compared with the VS-6 Series. Zener diode between gate and source for all products

VS-6 Series

VS-8 Series

PS-8 Series

s Product List

sProduct List

sProduct List

*: VGS = 4 V

1. VS/PS Series

VDSS(V) ID(A) 10 V 4.5 V 2.5 V 2.0 V 1.8 V

RDS(ON) max (m) Ciss typ.(pF)

Qg typ.(nC)

20 6 24 32 37 17 1400 S2C30 6 24 32 25 1250 S2D30 6 28 35 41 19 1420 S2E

20 2.7 110 160 300 6 470 S3E20 4.5 55 100 180 9.8 680 S3G20 5.5 40 60 120 19 1430 S3D

TPC6004TPC6003TPC6005TPC6105TPC6107

TPC610430 4.5 60 100 13 570 S3HTPC6108

N-chSingle

P-chSingle

U-MOSIII

U-MOSIII

U-MOSIIIU-MOSIIIU-MOSIVU-MOSIIIU-MOSIV

12 5.5 35 55 90 20 1520 S3CTPC6103 U-MOSIII

VDSS(V) ID(A) 10 V 4.5 V 2.5 V 2.0 V 1.8 V


Qg typ.(nC)

U-MOSIIIU-MOSIIIU-MOSIIIU-MOSIIIU-MOSIVU-MOSIIIU-MOSIIIU-MOSIVU-MOSIVU-MOSIVU-MOSIIIU-MOSIVU-MOSIIIU-MOSIII

TPCF8001 30 7 N-ch Single 23 31 25.4 1270 F2ATPCF8101 12 6 28 40 85 18 1600 F3ATPCF8103 20 2.7 110 160 300 6 470 F3CTPCF8102 20 6 30 41 90 19 1550 F3B

TPCF8104 30 6 28 38 34 1760 F3DTPCF8201 20 3 N-ch Dual 49 66 100 7.5 590 F4ATPCF8301 20 2.7 110 160 300 6 470 F5ATPCF8302 20 3 59 95 200 11 800 F5B

TPCF8303 20 3 58 87 250 11 860 F5CTPCF8304 30 3.2 72 105 14 600 F5D

30 4 50 77 10 47030 3.2 72 105 14 600

TPCF8A01 20 3.0 N-ch+SBD 49 66 100 7.5 590 F7ATPCF8B01 20 2.7 P-ch+SBD 110 160 300 6 470 F8A

P-ch Dual

TPCF8402 F6BN-ch+P-ch

P-ch Single

VDSS(V) ID(A)

RDS(ON) max (m)

10 V 4.5 V 2.5 V 1.8 V

TPCP8201 30 4.2 50 77 U-MOSIII

U-MOSIV

U-MOSIII

U-MOSIII

TPCP840120 0.1 3 * 4

TPCP8402

12 5.5 38

77

58 103

TPCP8J01

30 4.2 50

30 3.4 72 105 U-MOSIV

32 6.0 35 49 *

U-MOSIV

50 0.1 U-MOSIII

N-ch / P-chLoad Switch

TPCP8202 30 5.5 23 39 U-MOSIVN-ch Dual

TPCP8301 20 5 31 60 U-MOSIV

TPCP8302 20 5 33 * 45 95 U-MOSIVP-ch Dual

P-ch Single

TPCP8002 20 9.1 10 13.7 U-MOSIVN-ch Single

TPCP8001-H 30 7.2 16 25 Ultra-high-speed U-MOSIII

TPCP8101 20 5.6 30 41 90 U-MOSIII

N-ch + P-ch

U-MOSIIITPCP8403

60 40 4.7 40

40 3.4 70 105 U-MOSIV

N-ch + P-ch

N-ch + NPN

Marking SeriesPart NumberMaximum Ratings Circuit

Configuration

Part NumberMaximum Ratings Circuit

Configuration SeriesMarking

Part NumberMaximum Ratings Circuit

Configuration Series


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sFeatures

Achieves the smallest mounting area per unit ON-resistance, a 64% reduction in area ratio compared with the TSSOP-8 package.

The slimmest package, a 0.3 mm reduction in mounting height compared with the TSSOP-8 package.

Compatible with an ON-resistance range that can be used in overcurrent protection circuits.

sOverview of the Smart Thin Package

< Lithium-ion Battery Protection Circuit >

< Recommended Land Pattern > < Package Dimensions >

Top Bottom

Unit: mm

G1 S1

G2 S2

0.5

S1

S2

0.2 0.42 0.75

2.33

0.4

0.50.52.0

3.8

0.450.45

0.6

2.891.21

0.56

0.9

0.42

< Trend in Small Surface-Mount Packages Used in PCMs >

350

300

250

200

150

100

50

0TSSOP-8 STP

2.0

6.4

3.8

3.3 max

2.8

2.9

ControlIC

RDS(ON)perM

ountingAreabyUnit

RDS(ON

)xA(mW

.A)

Toshiba PS-8 Class Package

70% reduction

Comparison of typical RDS(ON) values when the VGS is 4.0 V.

Unit: mm

2. STP Series

s Product List

TPCT4201 20 6 37 27 Available Available

U-MOSIII

TPCT4202 30 6 40 32 Available Available

VSSS(V)VGS= 2.5 V VGS= 4 V

25.5

30.5

VGS= 4.5 VIS(A)

RSS(ON) typ. (m)Series

Schedules

Sample Mass productionPart Number


10/40


10

s Features

Application of third-generation design of ultra-high cell

density trench technology (18 Mcell/cm2)

ON-resistance reduced by 25% compared with that of

conventional products (in comparison with Toshiba U-MOSII) RDS(ON)typ.(m)@VGS=4V

20

15

10

5

0

D2 S2 S2 G2

D1 S1 S1 G1

D2 S2 S2 G2

D1 S1 S1 G1

Common-draintype

s Features

Achieved RDS(ON) = 17 m for TPCS8204 employing U-MOSIII design

Common-drain types are available:

Ideal for use in lithium-ion battery protection and reverse current prevention circuits

Control IC

s Product List

3. TSSOP-8 Series

Low ON-resistance5N-channel 20-V products (TSSOP-8/dual type)

Dual type /VDSS = 20 V

Common-Drain Type5Common-drain series suitable for reverse current prevention in portable electronic devices

and lithium-ion secondary battery protection

Total impedancereduced by eliminationof external wiring

DC/DCconverter

Charger

Reverse current prevention

Battery protection

Conventional type

External wiring resistancefor connecting D1 and D2.

U-MOSII U-MOSIII U-MOSIV

-MOSV MACHII

-MOSV MACHII

U-MOSIV

U-MOSIV

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIV

U-MOSIII

U-MOSIII

-MOSV

-MOSV MACHII

10 V 4 V 2.5 V 2.0 V

10 600TPCS8007-H 200 1.9 450

600 10TPCS8008-H 250 1.7 580

TPCS8104 30 11 12 18 107 5710

TPCS8105 30 11 13.5 19.5 107 5710

TPCS8209 20 5 30 40 60 15 1280

TPCS8210 20 5 30 40 60 15 1280

TPCS8204 20 6 17 22 35 22 2160

TPCS8208 20 6 17 22 35 22 2160

TPCS8211 20 6 24 29 45 20 1590

TPCS8213 20 6 13 18 49 3140

TPCS8302 20 6 35# 60 95 28.5 1590

TPCS8214 30 6 13.5 18.5 42 3240

TPCS8212 20 6 24 29 45 20 1590

20 5 21# 30 80 33 2560TPCS8303P-ch Dual

P-ch Single

N-ch Dual

VDSS(V) ID(A)


Qg typ.(nC)

TPCS8004 200 1.3 800 12 380

10 600TPCS8009-H 150 2.1 350 N-ch Single

SeriesPart NumberMaximum Ratings Circuit

Configuration

: Drain-common type #: VGS = 4.5 V


11/4011

0.8

1 4

8 50.05 M A

0.250.05

0.2+00.2

0.55

0.50.1

4.650.3

3.650.2

0.05 S

3.50.20.750.05

0.1660.05

S

A

(mm2)

(mm)

(C/W)

(C/W)

(A)

(m)

SOP-8

30

1.9

65.8

18

1.6

TSSOP Advance

16.3

0.8

54.3

4.2

30

0.5

s Features

Lower ON-resistance and thinner package (0.8 mm max) achieved by

employing flat leads and an AI strap structure

High current and high power dissipation achieved by having an exposedheatsink on the bottom of the package (ID(DC) = 20 A, PD = 30 W)

4. TSSOP Advance Series NEW

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4PD - Ta

0 25 50 75 100 125 150 175

SOP-8PD = 0.43 W

TSSOP AdvancePD = 0.51 W

PD - Ta

0 25 50 75 100 125 150 1750.0

0.1

0.2

0.3

0.4

0.5

0.6

SOP-8PD = 0.43 W

TSSOP AdvancePD = 0.51 W

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

PCB area

Total height (max)

rth (ch-a) (t = 10s) (Note 1)

rth (ch-c)

Current rating

Package resistance(Note 2)

46% reduction

Low profile

High power dissipation

High current guarantee

Al strap stractureNote 1: When mounted on a glass-epoxy board (25.4 mm 25.4 mm 0.8 mm)Note 2: Without chip resistance

This new package, almost half the mounting area of the SOP-8, offers power dissipation approximately 1.1 times higherthan that of the SOP-8 package, having an exposed heatsink on its bottom.

s High Power Dissipation

DrainPowerD

issipationPD(W)

Ambient Temperature Ta (C)

Device mounted on a glass -epoxy boardFR-4 25.4 25.4 0.8 mm(Note 1)

Power dissipation = 120%

(Mounted area = 50%)

TSSOP

Advance

mounted

board

SOP-8

mounted

board

(Note 1)

TSSOP

Advance

mounted

board

SOP-8

mounted

board

(Note 2)

DrainPowerDissipationPD(W)

Ambient Temperature Ta (C)

Device mounted on a glass -epoxy boardFR-4 25.4 25.4 0.8 mm(Note 2)

Power dissipation = 110%

(Mounted area = 50%)

1.050.2

2.20.2

8 5

1 4

0.80.1

0.60.1

2.750.2

Features of TSSOP Advance

s Product List

VDSS(V) ID(A) VGS = 4.5 V VGS = 10 V

30 20 14 9.5 6.0TPCM8001-H

RDS(ON)max (m) Qsw typ. (nC)VDS = 24 V

Ultra-high-speed U-MOSIII

Part Number Maximum Ratings Series


12/40


12

Ultra-High-Speed U-MOSIII Series

s Electrical Characteristics Comparison

NEW

NEW

Top View

Bottom View

High Side

Low Side

SBD[CMS01]

5. SOP Series

MOSBD (MOSFET with SBD)

DC/DC converters for portable electronicdevices and notebook PCs

s Applications

s

Efficiency Characteristics

RDS(ON)(m)@VGS = 4.5 V QSW(nC)

43% RDS(ON) Qsw reduction(Compared with high-speed U-MOSIII)

s Features

Low gate switch charge: 14% reduction compared withthe high-speed U-MOSIII process

Low ON-resistance (Al straps): 34% reduction comparedwith the high-speed U-MOSIII process

High current, low-profile package with superior powerdissipation: housed in SOP Advance

s Reference BoardAn evaluation kit is provided in the form of a 3-phase synchronous rectificationbuck converter for evaluating ultra-high-speed power MOSFETs.

Input/output voltage range

Input = 5 V to 19 VOutput = 1.075 V to 1.850 V

Maximum output current: 60 A (3-phase)

High efficiency

3-phase Switching frequency: 250 kHz, 300 kHz or external frequency

s Features

DownsizingIntegrating a MOSFET, used for the low side, and an SBD ina single package

High-efficiencyReduced wire inductance through the use of a monolithicstructure that combines a MOSFET and an SBD

A MOSFET that uses the ultra-high-speed U-MOSIII process

Operating temperatureChannel temperature: guaranteed 150C

Guaranteed avalanche capability

High-Speed U-MOSIII Ultra-High-Speed U-MOSIIITPC8009-H TPC8017-H

RDS (ON) (m) 11 7.3

Qsw (nC) 9.1 7.8

Cgd (pF) 250 175

Cgs (pF) 1210 1290

RDS (ON) QSW (mnC) 100.1 56.9

Capacitance ratio (Cgd/Cgs) 20.7% 13.6%

* RDS(ON): VGS= 4.5 V typ.QSW: VDS= 24 V typ.Cgd/Cgs: VDS= 10 V typ.

s Electrical Characteristics Comparison

Performance Index:

improved 43%

Reduced capacitance

Shoot-throughcurrent control

91

10 Iout (A) 100

90

89

88

87

86

85

84

83

82

81

80

@Vin = 19 V, Vout = 1.5 V, f = 300 kHz, Burst mode, Ta = 25 C, High side: 1 MOSFET, Low side: 2 MOSFETs

Efficiency Characteristics

Ultra-high-speed U-MOSIIISOP Advance type

TPCA8003-H+TPCA8004-H


SOP-8 typeTPC8017-H+TPC8018-H

High-speed U-MOSIII

(conventional type)SOP-8 type

TPC8009+TPCA8013-H

Ultra-high-speed U-MOSIIISOP Advance type

TPCA8005-H+TPCA8003-H


SOP Advance typeTPCA8005-H+TPCA8004-H

Imprmproved bed by thethecombination of highombination of highside and loide and low sidesideImproved by thecombination of highside and low side

Imprmproved bed byemplomploying an SOPing an SOPAddvance pacnce packaageImproved byemploying an SOPAdvance package

Design impresign improvementementthrhrough the ultra-ugh the ultra-high-speed U-MOSigh-speed U-MOS IIIIIIDesign improvementthrough the ultra-high-speed U-MOSIII

Efficiency(%)

TPCA8020-H + TPC8A02-H(MOSBD)

Iout (A)

90

86

88

84

82

80

78

76

740 5 10 15 20

TPC8020-H+

TPC8018-H + CUS02

TPC8020-H+

TPC8017-H + CUS02

@ f = 300 kHz, Vin = 19 V, Vout =1 .5 V, High side: 1 MOSFET, Low side: 2 MOSFETs

Efficiency(%)

High side TPC8020-H 9.5

TPC8017-H 7.3Low side

TPC8018-H 4.8

CUS02

6.9

TPC8A02-H 6.2 11

7.8

12.0

0.45 (Note) Note: VDSF


13/4013

SOP-8 Series

sFeatures

A selection of low ON-resistance and high-speed switching productsLow ON-resistance Series: U-MOSIII/IV

High-speed switching Series: high-speed U-MOSIII, ultra-high-speed U-MOSIII

ON-resistance reduction through the use of an Al strap structure

s Product List

10 V 4.5 V 4 V 2.5 VVDSS(V) ID(A)

RDS(ON) max (m) Qg typ.

(nC)

Cisstyp.

(pF)

23 139530 13 9 13

30 11 14 22 39 1860 U-MOS III

64030 11 17 25 11

30 15 6.6 9.5 25 146530 18 4.6 6.2 38 2265

200 1.8 400 11 440

20 5 50 70 9.5 780 U-MOSIII

20 6 20 30 22 2010 U-MOSIII

30 5 40 60 15 600 U-MOSII

30 5.5 36 44 25 1250 U-MOSIII

30 6 21 27 16 840

30 8 15 20 75 3530 U-MOSIII

N-ch

Single

N-chDual

30 10 20 30 45 2260 U-MOSIII

30 11 12 18 107 5710 U-MOS IV

30 11 10 18 107 4500 U-MOS IV

30 13 7 15 130 5880 U-MOSIII

30 13 6 14 130 5880 U-MOSIII

30 18 4.5 6.8 180 7480 U-MOSIV

20 10 10 14 115 9130 U-MOS IV

40 8 25 35 48 2180 U-MOSIII

40 7.5 30 37 27 1190

30 16/1 5.6 8.5 34 1970

30 6 26 33 27 1240 U-MOSIII

30 4.5 33 42 40 1540 U-MOSIV

30 6 25 30 17 940

30 8.5/1 18 21 49 2295 U-MOSIII

P-chSingle

N-ch/

N-ch+SBD

N-ch+SBD

40 6.5 27 35 11 65

40 6.5 30 37 27 1970

N-ch/P-chDual

-MOSV

TPC8020-H

TPC8014

TPC8021-H

TPC8017-H TPC8018-H

TPC8012-H

TPC8208

TPC8207

TPC8209

TPC8211

TPC8212-H

TPC8210

TPC8109

TPC8111

TPC8113

TPC8107

TPC8112

TPC8114

TPC8115

TPC8110

TPC8116-H

TPC8A02-H

TPC8405

TPC8A01

TPC8406-H

TPC8022-H 40 7.5 27 35 11 650

SeriesPart NumberMaximum Ratings Circuit

Configuration



Ultra-high-speed U-MOSIIIUltra-high-speed U-MOSIII






High-speed U-MOSIII


: Al straps


14/40


14

1.27

1 4

8 50.05 M A

0.05 S

0.40.1

0.150.05

5.00.2

0.595

0.50.1

6.00.3

0.950.05

0.1660.05

1.10.2

3.50.2

5.00.2

8 5

1 4

0.80.1

0.60.1

S

A

6. SOP Advance Series NEW

s Features

Mounting area identical to that of the SOP-8 Series

A lower ON-resistance and a thinner package (1.0 mm max) achieved by

employing flat leads and an AI strap structureHigh current and high power dissipation achieved by having an exposed heatsink

on the bottom of the package (ID(DC) = 40 A, PD = 45 W)

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

PCB area

Total height (max)

rth(ch-a) (t = 10s)(Note 1)

rth(ch-c)

Current rating

Package resistance (Note 2)

(mm2

)

(mm)

(C/W)

(C/W)

(A)

(m)

Features of SOP Advance

Same PCB area as SOP-8

Low profile

High power dissipation

High current guarantee

Al strap stracture

SOP-8

30

1.9

65.8

18

1.6

SOP Advance

30

1.0

44.6

2.78

40

0.5

Note 1: When mounted on a glass-epoxy board (25.4 mm 25.4 mm 0.8 mm)Note 2: Without chip resistance

s Product List

Portable electronic devices: DC/DC converters for notebook PCss Applications

4.250.2

VDSS(V) ID(A) 10V 4.5V 2.5V

30 27 9 13 24 1395

30 35 6.6 9.5 25 1465

30 40 4.6 6.2 37 2265

30 40 6 109 4600U-MOSIII

TPCA8005-H

20 40 3.5 7.5 32 2900TPCA8011-H

TPCA8003-H

TPCA8004-H

40 30 9 14 22 1365TPCA8014-H

TPCA8015-H

60

40

25

35

21

5.4

26

7.9

22

37

1375

2155

TPCA8016-H

100 18 67 12 780TPCA8006-H -MOSVI

150 7 350 10 600

-MOSV MACHII

TPCA8009-H

200 5.5 450 10 600

600

TPCA8010-H

250 4 580

10TPCA8008-H

TPCA8102

TPCA8103 30 40 4.2

4.0V

14

12 6 33 51 18 1600TPCA8105

40 7.5 27 11 650TPCA8020-H 35

40 7.5 30 27 1190TPCA8107-H 37

6.8 184 7880 U-MOSIV

TPCA8104 60 40 16 24 90 4300 U-MOSIII

N-chSingle

P-chSingle

P-ch Single

RDS(ON) max(m) Qg typ.(nC)

Ciss typ.(pF)Part Number

Maximum Ratings CircuitConfiguration

Series




15/4015

7. U-MOSIII (Trench Type) Series

sRDS(ON) = 5.8 m (max) MOSFET housed in TO-220 package

Poly Si

P PP

N

N N N N

N+

Poly Si

P P P

N

N+ N+ N+

N+

N+

VGS = 10 V2SK3844

50

40

30

20

10

0 0.2 0.4 0.6 0.8 1.0

IDVDS

0

Employing submicron trench-processing technology

contributes to higher integration of the new product, so

making it possible to realize ultra-low ON-resistance.

An approximately 60% reduction in the ON-resistance

compared with previous products

Support of lower power dissipation in high current

applications

60% reduction

By employing a trench structure, this ultra-low ON-resistance series achieves extremely high integration.

Planar structure

Drain

Source Gate

Trench (U-MOS) Structure

Source Gate

Drain

s Product List

s Feature

High density through the use of submicron technology

60 % RDS(ON) reduced by per unit area (as compared with the maximum RDS(ON) of the L2

--MOSV) Guaranteed avalanche capability and improved in di/dt capability Protection zener diode between gate and source

DrainCurrentID(A)

Drain-Source Voltage VDS (V)

Previousdevice

Commonsource

TC = 25C

2SJ668

2SK3662

2SK3842

2SK3844

2SK3845

60

60

60

60

60

5

35

75

45

70

20

35

125

45

125

New PW-Mold

TO-220NIS

TFP

TO-220NIS

TO-3P(N)

12.5

170

5.8

5.8

5.8

10

10

10

10

10

18

38

23

23

2.5

19

250

4

4

2.5

18

38 8.0 4.5 38

16 28 4.5 16

13 28 4.5 13

15

2SJ669 60 5 1.2 TPS 170 10 2.5 250 4 2.5 15

2SJ681 60 5 20 New PW-Mold2 170 10 2.5 2.5 4 2.5 15

TPCA8104 60 40 45 SOP Advance 16 10 20 24 4 20 90

91

210

40

402SK3846 40 26 TO-220NIS 18 10

2SK3847 40 32 TO-220SM 18 10

2SK3843 40 75

25

30

2.5 150 4 2.5 152SK4017 60 5 New PW-Mold2 100 1020

2.5 150 4 2.5 152SK4033 60 5 New PW-Mold 100 1020

35 2002SK3940 75 70 TO-3P(N) 7.0 10150

38 10 4.5 38 1962SK4034 60 75 TFP 5.8 10125

125 TFP 3.5 10

196

196

2SK3754 30 5 25 TO-220NIS 89 10 2.5 99 4.5 2.5 2.5

196

VGS(V) VGS(V)

RDS(ON)max(m)

RDS(ON)max

(m)ID(A) ID(A) ID(A)PD(W)VDSS(V)

Qg typ.

(nC)Package

Maximum RatingsApplications

PartNumber

Motor drivesolenoids

Lamp driversDC/DC converters


16/40


16

s Product List

s Qg-RDS(ON) Trade-Off

s Characteristics of High-Speed Series

*: Under development

5.1

6.26.2

8.4

6.4

7.87.8

10.5

87

8686

96

30

2727

33

60

7575

100

TK70D06J1

TK60D08J1*TK60A08J1*

TK55D10J1*

70

6060

55

140

14045

140

TO-220W

TO-220WTO-220SIS

TO-220W

RDS(ON) (m) VGS = 10 V Qsw (nC) (Typ.)

ID (A)VDSS(V) VDS = VDSS *0.8, ID = ID (DC)

PD

PD(W) Typ. Max

Qg (nC) (Typ.)Package

Maximum RatingsPart Number

x VDSS = 60 V

x VDSS = 60 V57% Qg reduction compared with products featuring the approximate RDS(ON)

x VDSS = 100 V (Under development)63% RDS(ON) reduction compared with products featuring the approximate Crss

x VDSS = 100 V (Under development)Qg-RDS(ON)

Drain-Source ON resistance RDS(ON) (m)

00

50

100

150

200

250

5 10 15 20 25

TotalGateChargeQg(nC)

Low RDS(ON) Type

UHSIIISeries

TK70D06J1

00

50

100

150

200

250

300

350

10 20 30

Qg-RDS(ON)

Drain-Source ON resistance RDS(ON) (m)

TotalGateChargeQg(nC)

Low RDS(ON) Type

UHSIIISeries

TK55D10J1

20 nc/div

VGS = 2 V/div

VDS = 48 VID = 70 ATa = 25C

Low RDS(ON)TypeTK70D06J1

00.0 0.2 0.4 0.6 0.8 1.0

10

20

3040

50

60

70

80

90

100


ID-VDS

Drain

CurrentID(A)

TK70D06J1

Low RDS(ON) Type

CommonsourceTa = 25C

1000.1 1 10 100

1000

10000

Capacitance-VDS


Capacitance(pF)

Common sourceVGS = 0 V, f = 1 MHz

Ta = 25C

TK55D10J1

Low RDS(ON) Type Ciss

Coss

Crss

00.0 0.4 0.8 1.2 1.6 2.0

10

20

3040

50

60

70

80

90

100


ID-VDS

DrainCurrentID(A)

TK55D10J1

Low RDS(ON) Type

CommonsourceTa = 25C

63% reduction

8. High-Speed U-MOS III Series

The ultra-high-speed trench series realizes high speed and low ON-resistance and offers a VDSSof 60 V to 100 V and a 50% reduction in Qg-RDS(ON) trade-off. (Part of the series is underdevelopment.) This series of MOSFETs is housed in TO-220 packages, allowing them to be usedfor secondary-side synchronous rectification of switching power supplies.

s Features

Low ON-resistance achieved by high density through the use of submicron technology Approximately 50% reduction in Qg-RDS(ON) trade-off (compared with conventional products)

through an optimized trench structure

Guaranteed avalanche capability

Protection zener diode between gate and source

High power dissipation achieved by having the series housed in the TO-220(W) package with anexposed heatsink on the bottom of the package

57% reduction


17/4017

9. -MOSVII/-MOSVSeries (VDSS = 100 to 250 V)

RDS(ON) max(m)ID(A) Ciss typ.(pF) Crss typ.(pF) Qg typ.(nC) Qsw typ.(nC)VDSS(V) SeriesPackageMaximum RatingsPart Number

s Product List

By employing submicron technology and reducing the gate charge, this latest series achieves

extremely high speed and low RDS(ON).

s Features

Low RDS(ON) Total gate charge (Qg) reduction

High-speed switching High avalanche capability

s Applications

Digital amps

DC/DC converters Motor drives

s Comparison of Switching Characteristics with -MOSVII

TPCA8008-H 20 10 3.7580 600250 4

2SK3669

SOP Advance

New PW-Mold125 480 9 8.0 4.2100 10

TPCA8006-H

-MOSV

MACH-II

SOP Advance67 780 17 12 6.9100 18

TPCS8009-H TSSOP-8350 600 20 10 3.3150 2.1

TPCS8007-H TSSOP-8450 600 20 10 3.3200 1.9

TPCS8008-H TSSOP-8580 600 20 10 3.3250 1.7

TPCA8009-H SOP Advance350 600 20 10 3.7150 7

TPCA8010-H SOP Advance450 600 20 10 3.7200 5.5

-MOSVII

2SK2399(-MOSV) 2SK3669(-MOSVII)

2SK2399(-MOSV) 2SK3669(-MOSVII)

VDS = 10 V/div

VGS = 2 V/div

VDS = 10 V/div

VGS = 2 V/div

VDS = 10 V/div

VGS = 2 V/div

VGS = 2 V/div

VDS = 20 V/div

0

0 0

0

10 ns/div 10 ns/div

50 ns/div 50 ns/div

20

16

12

8

4

00 5 10 15 20 25 30

2SK3669(-MOSVII)

2SK2399(-MOSV)

s Dynamic Input / Output Characteristics (-MOSVII Series)

Total Gate Charge Qg(nC)

Gate-SourceVoltageVGS(V)

Common sourceTc = 25CID = 10 AVDD = 80 VPulse test

65% reduction

ON

Off


18/40


18

10. High-speed -MOSV Series (VDSS = 450 to 600 V)

0

2SK2842 (Equivalent Exisiting product)

200 ns/div

2SK3313 (High Speed)

200 ns/div

0

Qg40%

reduction

s Characteristics of MACHII SeriesSwitching loss reduced by 40%

s Characteristics of High-Speed Diode SeriesFaster parasitic diode

2SK3310 TO-220NIS

TO-220FL/SM2SK3309

0.65

0.65

40

65

65

450

450

10

10

10

10

5

5

23

23

2SK3126

TO-220NIS2SK3743 0.440450 13 10 6 34

TO-220FL/SM2SK3403 0.4100450 13 10 6 34

TO-220FL/SM2SK3312 1.25600 6 10 3 25 2SK2777

TO-220FL/SM2SK3437 180600 10 10 5 28 2SK2996

TO-3P(N)2SK3911 0.32150600 20 10 10 60

TO-3P(N)2SK3907 0.23150500 23 10 11.5 60

TO-220FL/SM2SK3399 0.75100600 10 10 5 35 2SK2866

VGS(V)ID(A)

ID(A)PD(W)VDSS(V)

RDS(ON)max()

Qgtyp.(nC)

TO-220NIS2SK3316 1.835

35

500 5 10 2.5 60 2SK2662

1.7 10 2.5 150 2SK3563TO-220SIS2SK3868 500 5

2SK4042 TO-220SIS 0.9740500 8 10 4 185 2SK3561

2SK3417 TO-220FL/SM 1.850500 5 10 2.5 60 2SK2991

TO-220NIS2SK3313

2SK3314

2SK3131

2SK4016

0.6240500 12 10 6 90 2SK2842

TO-3P(N)

TO-3P(L)

TO-220SIS

0.49

0.11

0.50

150

250

50

500

500

600

15

50

13

10

10

10

7

25

6.5

105

105

160

2SK2698

2SK3132

2SK3797

2SK4015 TO-220SIS 0.8645600 10 10 5 170 2SK3569

2SK3906 TO-3P(N) 0.33150600 20 10 10 400 2SK3911

2SK3936 TO-3P(N) 0.25150500 23 10 11.5 380 2SK39072SK3947 TO-220NIS 1.440600 6 10 3 150 2SK3562

VGS(V)ID(A)

ID(A)PD(W)VDSS(V)

RDS(ON)max()

trrtyp.(ns)

ID = 10 A/div

ID = 10 A/div

VDS: 100 V/div

VGS: 2 V/div

10 nC/div

Qg = 92 nC

VDS: 100 V/div

VGS: 2 V/div

10 nC/div

Qg = 56 nC

Equivalent Existing product

600V MACH-II 2SK3911

MACH-I

MACH-II

s Product List MACH Series

To foster the development of high-efficiency equipment, Toshiba has developed two series of

high-speed Power MOSFETs: a High-Speed Switching Series for AC adapters and switching

power supplies; and a High-Speed Diode Series for motor controllers and inverter circuits.

The MACH Series: Achieves a higher switching speed than the existing -MOSV Series, which is currentlywell established in the market.

The High-Speed Diode Series: Achieves a higher parasitic-diode speed by using lifetime control (trr 100 ns)

Package SeriesEquivalent

ExistingPart Number


AC adaptersSwitching powersupplies

Part Number

High-Speed Diode Series (HSD Series)

Package

EquivalentExisting

Part Number


Motor ControlInverterSwitching power

supplies

Part Number


19/4019

s Features

11. -MOSIV/VI Series(VDSS = 450 to 900 V)

q-MOSVISeries (VDSS = 450 to 600 V)

A 17% reduction in the Qg characteristic compared with equivalent existing products through an optimized chip design

A switching characteristic (toff) 15% faster than that of equivalent existing productsGuaranteed avalanche capability for all products

q-MOSIV Series (VDSS = 800 to 900 V)

A 37% reduction in the Qg characteristic compared with equivalent existing products through an optimized chip design

A switching characteristic (toff) 15% faster than that of equivalent existing products

Guaranteed avalanche capability for all products

qTO-220SIS and TO-3P(W) packages

Cu connectors link the pellets and outer leads of these packages to improve their heat dissipation.

The mounting height of the TO-220SIS is reduced by approximately 2.8 mm compared with the existing package,

the TO-220NIS. This helps make end products even slimmer and more compact.

s Product List

Existing EquivalentPart Number

PackagePart NumberSeries

-MOSVI

-MOSIV

2SK3757

2SK3766

2SK3869

2SK3935

2SK3904

2SK3563

2SK3863

2SK3561

2SK3568

2SK4012

2SK3934TK15H50C

2SK3905

TK19H50C

TK20H50C

2SK3767

2SK3567

2SK3562

2SK3667

2SK3569

2SK3797

2SK3903

TK16H60C

2SK3633

2SK3879

2SK3880

2SK4013

2SK3566

2SK3564

2SK3798

2SK3565

2SK3742

2SK3700

2SK4014

TK07H90A

2SK3799

2SK3473

2SK3878

TK09H90A

2SK3543

2SK3543

2SK3407

2SK2662

2SK2543

2SK2842

2SK2698

2SK3905

2SK2837

2SK3067

2SK2750

2SK2545

2SK2996

2SK2843

2SK2915

2SK2746

2SK2718

2SK2700

2SK2717

2SK2717

2SK2610

2SK2749

2SK2611/2SK2968

2

2

10

17

19

5

5

8

12

13

1515

17

19

20

2

3.5

6

7.5

10

13

14

16

7

6.5

6.5

6

2.5

3

4

5

5

5

6

7

8

9

9

9

2.45

2.45

0.68

0.25

0.26

1.5

1.5

0.85

0.52

0.4

0.30.4

0.31

0.3

0.27

4.5

2.2

1.25

1.0

0.75

0.43

0.44

0.4

1.7

1.7

1.7

1.7

6.4

4.3

3.5

2.5

2.5

2.5

2.0

2.0

1.3

1.6

1.3

1.3

9

8

28

62

62

16

16

28

42

50

6248

62

62

62

9

17

28

33

42

62

62

62

35

35

35

45

12

17

26

28

25

28

45

45

60

38

60

60

330

270

1050

3100

3100

550

550

1050

1500

2400

31002450

3100

3100

3100

320

550

1050

1300

1500

3150

3100

3150

1500

1500

1500

1400

470

700

800

1150

1150

1150

1400

1650

2200

1450

2200

2200

450

500

600

800

900

TO-220SIS

TO-220SIS

TO-220SIS

TO-220SIS

TO-3P(N)

TO-220SIS

DP

TO-220SIS

TO-220SIS

TO-220SIS

PW-MoldTO-3P(W)

TO-3P(N)

TO-3P(W)

TO-3P(W)

TO-220SIS

TO-220SIS

TO-220SIS

TO-220SIS

TO-220SIS

TO-220SIS

TO-3P(N)

TO-3P(W)

TO-3P(N)

TO-220FL/SM

TO-3P(N)IS

TO-220SIS

TO-220SIS

TO-220SIS

TO-220SIS

TO-220SIS

TO-220SIS

TO-3P(N)

TO-220SIS

TO-3P(W)

TO-220SIS

TO-3P(N)

TO-3P(N)

TO-3P(W)

VDSS(V) VGS= 10 VID (A)

RDS(ON)max () Qgtyp.(nC)

CiSStyp.(pF)

Maximum Ratings


20/40


20

Existing Product New Product

2SK2698 TK15H50C

VDSS(V) 500 500

ID(A) 15 15

RDS(ON)() 0.4 (max) 0.4 (max)

Qg(nC) 58 (typ.) 48 (typ.)

toff(ns) 260 (typ.) 220 (typ.)

t = 50 ns/div

ID = 2 A/div

VGS = 2 V/div

VDS = 50 V/ns

2SK3565

2SK2717

Existing Product New Product

2SK2717 2SK3565

VDSS(V) 900 900

ID(A) 5 5

RDS(ON)() 2.5 (max) 2.5 (max)

Qg(nC) 45 (typ.) 28 (typ.)

toff(ns) 200 (typ.) 170 (typ.)

s -MOSVI Series (VDSS = 500 V)

qCharacteristic comparison

s Improved Heat Dissipation

qQg characteristicVDS = 400 V, ID = 14 A, Tc = 25 C

s -MOSIV Series (VDSS = 900 V)

qCharacteristic comparison

qSwitching characteristicVDS = 200 V, VGS = 10 V, ID = 3 A, Rg = 50 , Tc = 25 C

VGS = 2 V/div

VDS = 100 V/div

Qg = 48 nC

TO-3P(W) -MOSVI Design

VGS = 2 V/div

10nC/div

VDS = 100 V/div

Qg = 58 nC

TO-3P(N) -MOSV Design

Qg: 17%reduction

Switching-Off Waveform Comparison

< Conventional design > < TO-220SIS, TO3P(W) >

Power dissipationefficiency

improvement

Heat generatedfrom the chip surface isdissipated to the pins at

both ends via the

connectors.


21/4021

12. -MOS Seriess L

2--MOSV,VISeries (VDSS= 30 V to 150 V)

DP2SK2614 50 0.032 0.046 10 10 0.055 0.08 4 5 2520 40

TO-220NIS2SK2507 0.046 10 12 0.058 0.08 4 6 2550 0.03425 30

TO-220NIS2SK2886 50 0.014 0.02 10 25 0.027 0.036 4 25 6645 40

TO-3P(N)2SK2744 50 0.015 0.02 10 25 6845 125

TO-3P(N)2SK2550 50 0.024 0.030 10 25 3645 100

TO-3P(N)2SK2551 50 0.0072 0.011 10 25 13050 150

VDSS(V)

ID(A)

PD(W)

RDS(ON) () RDS(ON) () Qg typ.(nC)typ. max typ. max

2SK2989 LSTM50 0.125 0.9 0.15 10 2.5 0.24 0.33 4 1.3 6.5

VGS (V) ID (A) VGS (V) ID (A)

TO-220FL/SM2SK3051 0.024 0.03 10 25 3650 45 40

2SK2233 60 1045 100 TO-3P(N) 0.022 0.03 25 0.04 0.055 4 15 60

2SK2266 60 1045 65 TO-220FL/SM 0.022 0.03 25 0.04 0.055 4 15 60

2SK2376 60 1045 100 TO-220FL/SM 0.013 0.017 25 0.019 0.025 4 25 110

2SK2398 60 1045 100 TO-3P(N) 0.022 0.03 25 60

2SK2173 60 1050 125 TO-3P(N) 0.013 0.017 25 0.019 0.025 4 25 110

2SK2445 60 1050 125 110TO-3P(N) 0.014 0.018 25

102SK2962 100 1 0.9 LSTM 0.5 0.7 0.5 0.65 0.95 4 0.5 6.3

PW-Mini2SK2963 100 101 0.5 0.5 0.7 0.5 0.65 0.95 4 0.5 6.3

102SK2267 60 60 150 0.008 0.011 30 0.012 0.015 4 30 170TO-3P(L)

2SK2313 60 1060 150 0.008 0.011 30 0.012 0.015 4 30 170TO-3P(N)

TPS2SK2200 100 103 1.3 0.28 0.35 2 0.36 0.45 4 2 13.5

102SK2201 100 3 20 New PW-Mold 0.28 0.35 2 0.36 0.45 4 2 13.5

102SK4018 100 3 20 New PW-Mold2 0.28 0.35 2 0.35 0.45 4 2 13.5

New PW-Mold2SK2399 100 105 20 0.17 0.23 2.5 0.22 0.3 4 2.5 22

2SK2400 100 105 1.2 TPS 0.17 0.23 2.5 0.22 0.3 4 2.5 22

2SK4019 100 105 20 New PW-Mold2 0.17 0.23 2.5 0.22 0.3 4 2.5 22

TO-220NIS2SK2391 100 1020 35 0.068 0.085 10 0.09 0.13 4 10 50

2SK2314 100 1027 75 TO-220AB 0.066 0.085 15 0.09 0.13 4 15 50

TO-220FL/SM2SK2789 100 1027 60 0.066 0.085 15 0.09 0.13 4 15 50

TO-3P(N)2SK3506 30 1045 100 0.016 0.02 25 39

2SK3387 150 1018 100 TFP 0.08 0.12 9 0.09 0.18 4 9 57

TO-3P(N)2SK3129 50 1060 150 0.0055 0.007 30 0.008 0.01 4 30 135

2SK2745 TO-3P(N)50 0.00750 150 0.0095 10 25 0.011 0.016 4 25 130

LSTM 5.82SK2961 60 0.2 0.27 10 1 0.26 0.38 4 12 0.9

2SK2615 60 0.23 0.3 10 0.33 0.44 4 1 62 0.5 PW-Mini 1

2SK2229 2.560 0.12 0.16 10 0.2 0.3 4 1.3 125 1.2 TPS

2SK2782 60 0.039 0.055 10 10 0.06 0.090 4 5 2520 40 DP

TO-220NIS2SK2232 60 0.036 0.046 10 12 0.057 0.08 4 12 3825 35

TO-220FL/SM2SK2311 0.036 0.046 10 12 0.057 0.08 4 12 3860 25 40

TO-220NIS2SK2385 60 0.022 0.03 10 18 0.04 0.055 4 15 6036 40

PackagePart Number

2SJ360 60 0.55 0.73 10 0.5 0.86 1.2 4 0.5 6.51 0.5 PW-Mini

2SJ378 60 0.16 0.19 10 2.5 0.24 0.28 4 2.5 225 1.2 TPS

2SJ438 60 0.16 0.19 10 2.5 0.24 0.28 4 2.5 225 25 TO-220NIS

2SJ349 60 0.033 0.045 10 10 0.05 0.09 4 10 9020 45 TO-220NIS

0.045 10 10 0.05 0.09 4 10 90TO-220FL/SM2SJ401 60 0.03320 100

TO-220NIS2SJ334 60 0.029 0.038 10 15 0.046 0.06 4 15 11030 45

TO-220FL/SM 0.029 0.038 10 15 0.06 4 15 1102SJ402 60 30 100 0.046

6.31.682SJ508 100 1.34 1.9 10 0.5 2.5 4 0.51 1.5 PW-Mini

6.31.34 1.9 10 0.5 1.68 2.5 4 0.52SJ509 100 1 0.9 LSTM

TO-220NIS2SJ380 100 0.15 0.21 10 6 0.25 0.32 4 6 4812 35

TFP 62SJ619 100 0.15 0.21 10 0.25 0.32 4 6 4816 75

TFP 92SJ620 100 0.063 0.09 10 0.085 0.12 4 9 14018 25

TO-220NIS 92SJ464 100 0.064 0.09 10 0.085 0.12 4 9 14018 45

TO-220FL/SM 0.15 0.21 10 0.25 0.32 4 6 482SJ412 100 16 60 6

LSTM 182SJ537 50 0.16 0.19 10 2.5 0.27 0.34 4 1.35 0.9

2SJ507 60 0.5 0.7 10 0.72 1.0 4 0.5 5.61 0.9 LSTM 0.5


22/40


22

VGS(V)

PD(W)

RDS(ON)()VDSS

(V)ID

(A)ID(A)

Qgtyp.(nC)typ. max

s -MOSVSeries (VDSS= 150 V to 250 V)

Package

Maximum Ratings

Applications Part Number

DC/DC convertersMonitorsMotor controllers

2SJ618

2SJ407

2SJ567

2SJ676

2SJ680

2SJ610

2SJ512

2SJ516

2SK3670

2SK3205

2SK2882

2SK3443

2SK3497

2SK2992

2SK2835

2SK2381

2SK2920

2SK4020

2SK2350

2SK2965

2SK2382

2SK2401

2SK3625

2SK3444

2SK3176

2SK3462

2SK4022

2SK3342

2SK4021

2SK2417

2SK2914

2SK2508

2SK2598

2SK2993

2SK3994

2SK3388

2SK3445

2SK2967

2SK2995

0.8

1.6

1.6

1.6

1.85

1.0

0.6

1.0

0.36

0.08

0.05

2.2

0.56

0.56

0.56

0.52

0.26

0.15

0.13

0.13

0.065

0.067

0.038

1.2

1.2

0.80.8

0.42

0.42

0.18

0.18

0.082

0.090

0.082

0.09

0.048

0.048

TO-3P(N)

TO-220NIS

New PW-Mold

TPS

New PW-Mold2

PW-Mold

TO-220NIS

TO-220NIS

LSTM

PW-Mold

TO-220NIS

TFP

TO-3P(N)

PW-Mini

TPS

TO-220NIS

New PW-Mold

New PW-Mold2

TO-220NIS

TO-220NIS

TO-220NIS

TO-220FL/SM

TO-220FL/SM

TFP

TO-3P(N)

New PW-Mold

New PW-Mold2

New PW-MoldNew PW-Mold2

TO-220NIS

TO-220AB

TO-220NIS

TO-220FL/SM

TO-220FL/SM

TO-220NIS

TFP

TFP

TO-3P(N)

TO-3P(N)IS

130

30

20

1.3

20

20

30

35

0.9

20

45

125

130

1.5

1.3

25

20

20

30

35

45

75

100

125

150

20

20

2020

30

20

45

60

100

45

125

125

150

90

180

200

200

200

200

250

250

250

150

150

150

150

180

200

200

200

200

200

200

200

200

200

200

200

250

250

250

250250

250

250

250

250

250

250

250

250

250

250

10

5

2.5

2.5

2.5

2

5

6.5

0.67

5

18

30

10

1

5

5

5

5

8.5

11

15

15

25

25

30

3

3

4.54.5

7.5

7.5

13

13

20

20

20

20

30

30

0.37

1.0

2.0

2.0

2.0

2.55

1.25

0.8

1.7

0.5

0.12

0.055

0.15

3.5

0.8

0.8

0.8

0.8

0.4

0.26

0.18

0.18

0.082

0.082

0.052

1.7

1.7

1.01.0

0.5

0.5

0.25

0.25

0.105

0.105

0.105

0.105

0.068

0.068

10

10

10

10

10

10

10

10

4

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

1010

10

10

10

10

10

10

10

10

10

10

18

20

10

10

10

24

22

29

4.6

12

57

45

3

10

10

10

10

17

30

40

40

44

44

125

12

12

10

10

20

20

40

40

100

45

100

45

132

132

5

2.5

1.5

1.5

1.5

1.0

2.5

3

0.5

2.5

9

15

5

0.5

2.5

2.5

2.5

2.5

5

5.5

10

10

12.5

12.5

15

1.5

1.5

2.52.5

3.5

3.5

6.5

6.5

10

10

10

10

15

15


23/4023

Qgtyp.(nC)

2SK2838

2SK2679

2SK2952

2SK28412SK2949

2SK3499

2SK3472

2SK3374

2SK4023

2SK3543

2SK3126

2SK3407

2SK3544

2SK2998

2SK3302

2SK3471

2SK2599

2SK3373

2SK2862

2SK2661

2SK2662

2SK2991

2SK3466

2SK2542

2SK2543

2SK2776

2SK3538

2SK2601

2SK2842

2SK3068

2SK3398

2SK2916

2SK2698

2SK2917

2SK2837

2SK3117

2SK3132

2SK3371

2SK4026

2SK2846

2SK2865

2SK4002

2SK3067

2SK4003

2SK3975

2SK2750

2SK3085

2SK2544

2SK2545

2SK3130

2SK2777

2SK2602

2SK3312

2SK2996

2SK2843

2SK3438

2SK2889

2SK2866

2SK2699

2SK2953

2SK2915

2SK3265

2SK3453

400

400

400

400400

400

450

450

450

450

450

450

450

500

500

500

500

500

500500

500

500

500

500

500

500

500

500

500

500

500

500

500

500500

500

500

600

600

600

600

600

600

600

600

600

600

600

600600

600

600

600

600

600

600

600

600

600

600

600

700

700

40

35

40

8080

80

20

20

20

30

40

40

100

0.9

1.3

0.5

1.3

20

2575

35

50

50

80

40

65

65

125

40

100

100

80

150

90150

150

250

20

20

1.3

20

20

25

20

20

35

75

80

4040

65

125

65

45

45

80

100

125

150

90

150

45

80

TO-220FL/SM

TO-220NIS

TO-220NIS

TO-220 ABTO-220FL/SM

TFP

New PW-Mold

TPS

New PW-Mold2

TO-220NIS

TO-220NIS

TO-220NIS

TFP

LSTM

TPS

PW-Mini

TPS

PW-Mold

TO-220NISTO-220 AB

TO-220NIS

TO-220FL/SM

TO-220FL/SM

TO-220 AB

TO-220NIS

TO-220FL/SM

TFP

TO-3P(N)

TO-220NIS

TO-220FL/SM

TFP

TO-3P(N)IS

TO-3P(N)

TO-3P(N)ISTO-3P(N)

TO-3P(SM)

TO-3P(L)

New PW-Mold

New PW-Mold2

TPS

New PW-Mold

New PW-Mold2

TO-220NIS

New PW-Mold2

New PW-Mold

TO-220NIS

TO-220AB

TO-220AB

TO-220NISTO-220NIS

TO-220FL/SM

TO-3P(N)

TO-220FL/SM

TO-220NIS

TO-220NIS

TFP

TO-220FL/SM

TO-220AB

TO-3P(N)

TO-3P(N)IS

TO-3P(N)

TO-220NIS

TO-3P(N)IS

0.84

0.84

0.4

0.40.4

0.4

4.0

3.7

4.0

1.9

0.48

0.48

0.29

10

10

10

2.9

2.9

2.91.35

1.35

1.35

1.35

0.75

0.75

0.75

0.75

0.56

0.4

0.4

0.4

0.35

0.35

0.210.21

0.21

0.07

6.4

6.4

4.2

4.2

4.2

4.2

1.7

1.7

1.7

1.7

0.9

0.91.26

0.9

0.9

0.95

0.74

0.54

0.78

0.54

0.54

0.5

0.31

0.31

0.72

0.72

1.2

1.2

0.55

0.550.55

0.55

4.6

4.6

4.6

2.45

0.65

0.65

0.4

18

18

18

3.2

3.2

3.21.5

1.5

1.5

1.5

0.85

0.85

0.85

0.85

1.0

0.52

0.52

0.52

0.4

0.4

0.270.27

0.27

0.095

9.0

9

5.0

5.0

5

5.0

2.2

2.2

2.2

2.2

1.25

1.251.55

1.25

1.25

1.25

1.0

0.75

1.0

0.75

0.75

0.65

0.4

0.4

1.0

1.0

10

10

10

1010

10

10

10

10

10

10

10

10

10

10

10

10

10

1010

10

10

10

10

10

10

10

10

10

10

10

10

10

1010

10

10

10

10

10

10

10

10

10

10

10

10

10

1010

10

10

10

10

10

10

10

10

10

10

10

10

10

3

3

5

55

5

0.5

5

0.5

1

5

5

6

0.25

0.25

0.25

1

1

12.5

2.5

2.5

2.5

4

4

4

4

5

6

6

6

7

7

1010

10

25

0.5

0.5

1

1

1

1

1.5

1.5

1.8

1.8

3

33

3

3

3

5

5

5

5

5

6

8

8

5

5

17

17

34

3434

34

5

5

5

9

35

33

34

3.8

3.8

3.8

9

9

917

17

17

17

30

30

30

30

30

45

45

45

58

58

8080

80

280

9

9

9

9

9

9

20

20

20

20

30

3030

30

30

22

38

45

28

45

45

58

80

80

53

53

ID(A)

VDSS(V)

5.5

5.5

8.5

1010

10

1

1

1

2

10

10

13

0.5

0.5

0.5

2

2

35

5

5

5

8

8

8

8

10

12

12

12

14

15

1820

20

50

1

1

2

2

2

2

3

3

3.5

3.5

6

66

6

6

6

10

10

10

10

10

12

15

16

10

10

PD(W) typ. max

VGS(V)

ID(A)

RDS(ON)()

s -MOSVSeries (VDSS= 400 V to 700 V)

Package

Maximum RatingsApplications Part Number

AC 115 Vswitching powersupplies

Ballast invertersMotor controllers


24/40


24

3.0

3.0

1.9

1.9

1.9

1.3

1.0

1.0

15

8.0

8.0

5.6

3.73

3.7

3.7

2.3

2.3

1.1

1.05

1.2

1.1

1.05

1.4

3.6

3.6

2.2

2.2

2.2

1.7

1.2

1.2

20

9.0

9.0

6.4

4.3

4.3

4.3

2.5

2.5

1.4

1.25

1.4

1.4

1.25

1.7

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

10

1.5

15

3.0

3.0

3.0

3.5

4.0

4.0

0.5

0.5

0.5

1.5

1.5

1.5

1.5

3.0

3.0

3.5

4.0

4.0

4.0

4

8.0

2SK2603 TO-220AB800 1003

2SK2604

5

TO-3P(N)

800

125

2SK2605

5800

TO-220NIS45

2SK2746 7 TO-3P(N)800 150

2SK2607

2SK2884

2SK3301

9 TO-3P(N)800 150

5800

TO-220FL/SM100

1 PW-Mold900 20

2SK2733 1900 TO-220AB60

TO-220NIS2SK2718 2.5900 40

2SK2608 3900 TO-220AB100

2SK2700 3900 TO-220NIS40

2SK2719 3 TO-3P(N)900 125

2SK2610 5 TO-3P(N)900 150

2SK2717 5900 TO-220NIS45

2SK2749 7 TO-3P(N)900 150

2SK2847 8 TO-3P(N)IS900 85

2SK2611 9 TO-3P(N)900 150

2SK2883 3800 TO-220FL/SM75

2SK2845 1900 DP40

2SK3017 8.5 TO-3P(N)IS900 90

2SK2606 8 TO-3P(N)IS800 85

PD(W)

RDS(ON)()

VDSS(V) ID(A) Typ. Max VGS(V) ID(A)

Qg

typ.

(nC)

25

25

34

34

34

55

68

68

6

15

15

21

25

25

25

45

45

55

58

70

58

70

652SK2613 8 TO-3P(N)1000 150

2SK2968 10 TO-3P(N)900 150

s -MOSIIISeries (VDSS = 800 V to 1000 V)

PackageMaximum Ratings

Part Number


25/40

Power Modules

25

Unit: mm

N-ch 4

P-ch 4

N-ch 2 +

P-ch 2

MP4210

MP4209

MP4211

MP4208

MP4212

60

100

60

60

60

60

4

4

4

4

4

(typ.) (max)

5

3

5

5

5

5

10

10

10

10

10

10

Y

Y

Y

Y

Y

2.5

2.0

2.5

2.5

2.5

2.5

0.12

0.28

0.16

0.20

0.12

0.16

0.16

0.35

0.19

0.30

0.16

0.19

VGS(V)

ID(A)

PT(Ta = 25C)

(W)

RDS(ON)()VDSS

(V)ID

(A)

N-ch 2 +

P-ch 2

with FB-Di

N-ch 4

N-ch 3 +

P-ch 3

MP4411

MP4412

MP4410

MP6404

100

100

60

60

60

4.4

4.4

4.4

4.4

(typ.) (max)

3

5

5

5

5

10

10

10

10

10

Y

Y

Y

Y

2.0

2.5

2.5

2.5

2.5

0.28

0.17

0.12

0.12

0.16

0.35

0.23

0.16

0.16

0.19

VGS(V)

ID(A)

PT(Ta = 25C)

(W)

RDS(ON)()VDSS

(V)ID

(A)

q S-13M Series (6in1)

N-ch 6

MP6602

MP6622

MP6631

60

500

600

6

6

7

20

5

5

10

10

10

3-phase PWM

3-phase PWM

3-phase PWM

10

2.5

2.5

0.028

1.7

1.4

VGS(V)

ID(A)

PT(Ta = 25C)

(W)

RDS(ON)() Max

VDSS(V)

ID(A)

s Package Dimensions

S-10M S-12M S-13M

: Under development

25.2 0.2

0.55 0.15

1.1 0.15

2.54

1 10

9.00.2

0.50.15

4.00.2

1.2

2.3

7.5

0.5

31.5 0.240 0.4

30 0.2

3.5 0.2

0.57 0.2 2.45

1

0.64 0.2

3.81 3.175.082.54

3 3.5

3.2

0.2 M A

3

3.2

1.2

40.2

15.1

70.2

7.370.2

120.5

1.

8

0.

2

0.85 0.15

1.3 0.152.54

1 12

10.

50.

2

0.50.15

4.00.1

1.7

2.2

10.

0

0.5

A

S-10M Series (4-in-1)

Power modules enable high-density mounting and are the simplest of all multichip devices instructural terms. Use of these modules enables the construction of compact power supplies forelectronic equipment.

s Product List

Maximum Ratings Electrical Characteristics (Ta = 25 C)Polarity and

CircuitConfiguration

Part Number 4-V Drive

S-12M Series (4-in-1, 6-in-1)



Part Number 4-V Drive



Part Number Application


26/40

Product Index

26

RDS(ON)max()

VDSS

(V)

ID

(A)

RDS(ON)max()

VDSS

(V)

ID

(A)

600 6 1.25

50 45 0.03

50 50 0.011

250 13 0.25

500 10 1.0

500 2 3.2

600 6 1.25

2SK2545

2SK2550

2SK2551

2SK2598

2SK2599

2SK2601

2SK2602

TO-220FL/SM

-MOSII

-MOSII

-MOSII

-MOSII

2SJ200 TO-3P(N)

TO-3P(N)

180 10 0.83

2SJ201 200 12 0.63

TO-220NIS

TO-220NIS

TO-220NIS

TO-220NIS

TO-220NIS

TO-3P(N)IS

2SJ304 60 14 0.12

60 14 0.122SJ312

2SJ313 180 1 5.0

2SJ334 60 30 0.038 P 21

P 21

P 21

P 21

P 21

P 21

P 21

P 21

P 21

2SJ338 PW-Mold 180 1 5.0

2SJ349 60 20 0.045

TPS

2SJ360 PW-Mold 60 1 0.73

2SJ380 100 12 0.21

0.19

2SJ440 180 9 0.8

L2--MOSIV

L2--MOSIV

L2--MOSIV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

TO-220FL/SM2SJ401 60 20 0.045

2SJ378 60 5

-MOSII

TO-220NIS2SJ464 100 18 0.09 P 21

2SJ315 PW-Mold 60 5 0.25

TO-220FL/SM2SJ402 60 30 0.038

TO-220NIS2SJ407 200 5 1.0 P 22-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

TO-220FL/SM2SJ412 100 16 0.21

0.19TO-220NIS2SJ438 60 5

2SJ619

TO-220NIS 250 6.5 0.8 P 22

P 21

P 21

100 1 1.9

100 1 1.9LSTM

2SJ508

2SJ509

2SJ512

PW-Mini

TO-220NIS P 22250 5 1.25

2SJ516

P 2160 1 0.72SJ507 LSTM

TFP 100 16 0.21

2SJ537 LSTM P 2150 5 0.19

2SJ610 PW-Mold P 22250 2 2.55

2SJ620 TFP 100 18 0.09

2SJ618 TO-3P(N) 180 10 0.37

TO-3P(N)

TO-220AB 1000 4 3.8

1000 8 1.8

2SK1119

2SK1120

-MOSII .5

-MOSII .5

-MOSII .5

-MOSII .5

TO-3P(N) 100 5 3.82SK1359

1000 7 1.8TO-3P(N)IS

TO-3P(N)

TO-3P(L)

100 50 0.032

100 60 0.02

2SK1365

2SK1381

2SK1382

L2--MOSIII

L2--MOSIII

TO-3P(L)

TO-3P(L)

TO-3P(N)

32 0.095300

1000 12 1.0

180 10 0.83

2SK1486

2SK1489

2SK1529

-MOSIII.5

-MOSIII.5

-MOSII

New PW-Mold 60 5 0.172SJ668 P 15

U-MOSIII

-MOSV

-MOSV

U-MOSIII

TPS

TPS

New PW-Mold2

60

200

200

5

2.5

2.5

0.17

2.0

2.0

2SJ669

2SJ676

2SJ680

P 15

P 22

P 22

P 22

P 21

P 21

60 45 0.03

60 25 0.0462SK2232

60 45 0.032SK2233

60 45 0.032SK2266

60 60 0.0112SK2267

700 5 1.72SK2274

0.04660 252SK2311

60 60 0.0112SK2313

100 27 0.0852SK2314

200 8.5 0.42SK2350

60 45 0.0172SK2376

200 5 0.82SK2381

200 15 0.182SK2382

60 36 0.032SK2385

100 20 0.0852SK2391

2SK2398

100 3 0.352SK2201

60 50 0.0172SK2173

180 1 5.02SK2162

100 3 0.352SK2200

5 0.16602SK2229

100 5 0.232SK2399

100 5 0.232SK2400

200 15 0.182SK2401

250 7.5 0.52SK2417

60 50 0.018

180 9 0.8

2SK2445

2SK2467

50 25 0.0462SK2507

250 13 0.252SK2508

500 8 0.85

600 6 1.25

2SK2543

2SK2544

500 8 0.852SK2542

TPS

TO-220NIS

TO-220FL/SM

TO-3P(N)

TO-3P(N)

TO-3P(N)

TO-3P(N)

TO-3P(N)

TO-220NIS

TO-3P(N)

TO-220FL/SM

TO-3P(L)

TO-220NIS

TO-220FL/SM

TO-3P(N)

TO-220AB

TO-220NIS

TO-220FL/SM

TO-220NIS

TO-220NIS

TO-220NIS

TO-220NIS

New PW-Mold

TO-3P(N)

PW-Mold

TPS

TPS

New PW-Mold

TPS

TO-220FL/SM

TO-220NIS

TO-3P(N)

TO-3P(N)IS

TO-220NIS

TO-220NIS

TO-220NIS

TO-220AB

TO-220AB

TO-220AB

P 23

P 21

P 21

P 22

P 23

P 23

P 23

P 21

P 21

P 21

P 21

P 21

P 21

P 21

P 21

P 22

P 21

P 22

P 22

P 21

P 21

P 21

P 21

P 21

P 21

P 21

P 21

P 22

P 22

P 21

P 21

P 22

P 23

P 23

P 23

P 24800 3 3.62SK2603

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

L2--MOSV

-MOSII.5

TO-3P(L)

TO-220FL/SM

500

1000

25

4

0.2

3.8

2SK1544

2SK1930

-MOSIII.5

-MOSII.5

180 1 5.02SK2013 TO-220NIS-MOSII

-MOSII

-MOSII

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSIII

P 24800 5 2.22SK2604

8 1.2800 P 242SK2606

TO-3P(N)

TO-3P(N)IS

P 24

P 24

P 24

P 24

P 21

800 9 1.2

900 3 4.3

900 5 2.5

900 9 1.4

50 20 0.046

2SK2607

2SK2608

2SK2610

2SK2611

2SK2614 L2--MOSV

P 241000 8 1.72SK2613

TO-3P(N)

TO-3P(N)

TO-3P(N)

TO-220AB

DP

TO-3P(N)-MOSIII

-MOSIII

-MOSIII

-MOSIII

-MOSIII

-MOSIII

-MOSIII

TO-3P(N) 200 12 0.632SK1530 -MOSII

New PW-Mold 200 2.5 2.02SJ567 -MOSV P 22

New PW-Mold2 60 5 0.172SJ681 U-MOSIII P 15

P 24800 5 2.22SK2605 TO-220NIS-MOSIII

Part Number Series Package Page

Main Characteristics




27/4027

RDS(ON)max()

VDSS

(V)

ID

(A)

RDS(ON)max()

VDSS

(V)

ID

(A)





TO-220NIS P 22200 11 0.262SK2965

P 22

P 24

250

900

30

10

0.068

1.25

2SK2967

2SK2968

TO-3P(N)

TO-3P(N)

P 2160 2 0.32SK2615

500 5

500

400

5

5.5

1.5

1.5

1.2

P 23

P 23500 15 0.4

P 24900 5 2.5

P 23

P 23

2SK2661

2SK2662

2SK2679

2SK2698

600 12 0.65 P 232SK2699

P 24900 3 4.32SK2700

2SK2717

L2--MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

P 24

P 24

3 4.3900

900 1 9.0

2SK2719

2SK2733

P 24900 2.5 6.42SK2718

50 50 0.0095 P 212SK2745

50 45 0.02 P 212SK2744

L2--MOSV

L2--MOSV

L2--MOSV

P 24800 7 1.72SK2746

400 5.5 1.2 P 232SK2838

P 23400 10 0.552SK2841

P 23500 12 0.522SK2842

P 23600 10 0.752SK2843

900 8 1.4 P 242SK2847

P 24900 7 2.02SK2749

P 23600 3.5 2.22SK2750

P 23500 8 0.852SK2776

P 21100 27 0.0852SK2789

P 230.27500 202SK2837

200 5 0.8 P 222SK2835

P 23600 2 5.02SK2865

P 23600 2 5.02SK2846

-MOSV

-MOSV

-MOSV P 23600 6 1.252SK2777

P 2160 20 0.0552SK2782

L2--MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

600 10 0.752SK2866 -MOSV

-MOSV

900 1 9.0 P 242SK2845

P 23

150 18 0.122SK2882 P 22

800 3 3.62SK2883 P 24

P 23

500 3 3.22SK2862 -MOSV

P 2150 45 0.022SK2886

800 5 2.22SK2884 P 24

L2--MOSV

TO-220AB P 22250 7.5 0.52SK2914

P 23600 16 0.42SK2915 TO-3P(N)

LSTM 50 5 0.15 P 212SK2989 L2--MOSV

P 23500 5 1.52SK2991 TO-220FL/SM

TO-220FL/SM P 22250 20 0.1052SK2993

TO-220FL/SM P 2150 45 0.032SK3051

PW-Mini P 22200 1 3.52SK2992

P 23500 0.5 182SK2998 LSTM

L2--MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSIII

-MOSV

P 23400 10 0.552SK2949 TO-220FL/SM

P 22200 5 0.82SK2920 New PW-Mold

TO-220NIS P 230.55400 8.52SK2952

P 23600 15 0.42SK2953 TO-3P(N)IS

1 0.7100 P 212SK2963 PW-Mini

LSTM 60 2 0.27 P 212SK2961

LSTM 100 1 0.7 P 212SK2962 L2--MOSV

L2--MOSV

L2--MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

900 8.5 1.25 P 242SK3017 -MOSIII

TO-220NIS P 23600 10 1.02SK2996

P 22250 30 0.0682SK2995 TO-3P(N)IS

TO-3P(N)IS

P 23600 2 5.02SK3067 TO-220NIS-MOSV

TO-3P(N)

TO-3P(N)

50 60 0.0072SK3129 -MOSV

TO-220NIS P 231.55600 62SK3130

P 23

P 22

500

200

50

30

0.095

0.052

2SK3132

2SK3176

TO-3P(L)

P 18500 50 0.112SK3131 TO-3P(L)

TO-220NIS

150 5 0.52SK3205 PW-Mold

700 10 1.0 P 232SK3265

500 0.5 18 P 232SK3302 -MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

PW-Mold

TPS

900 1 20 P 242SK3301 -MOSIII

P 22

P 21

TO-220FL/SM P 23500 12 0.522SK3068 -MOSV

TO-3P(SM) P 23500 20 0.272SK3117

P 23600 3.5 2.22SK3085 TO-220AB

P 23450 10 0.652SK3126 TO-220NIS

-MOSV

-MOSV

-MOSV

2SK2889 P 23600 10 0.75

PW-Mini

TO-3P(N)

TO-220NIS

TO-220NIS

TO-220NIS

TO-220AB

TO-3P(N)

TO-220NIS

TO-3P(N)

TO-220AB

TO-220NIS

TO-3P(N)

TO-3P(N)

TO-3P(N)

TO-220FL/SM

TO-220AB

TO-220NIS

TO-220NIS

TO-3P(N)IS

TO-3P(N)

TO-220NIS

TO-220FL/SM

TO-220FL/SM

TO-3P(N)

TPS

New PW-Mold

TPS

DP

TO-220FL/SM

DP

TO-220AB

TO-220FL/SM

TO-220NIS

TO-220NIS

TO-220NIS

TO-220FL/SM

TO-220FL/SM-MOSV

TO-220NIS 450 10 0.65 P 18

P 18

2SK3310 MACH

-MOSV P 18500 12 0.622SK3313 TO-220NIS

-MOSV 600 6 1.252SK3312 TO-220FL/SM

2SK3314 P 18500 15 0.49TO-3P(N)-MOSV

TO-220FL/SM 450 10 0.65 P 182SK3309 MACH

-MOSIII

-MOSIII

-MOSIII

-MOSIII

U-MOSIII

-MOSIII

-MOSIII

-MOSIII

-MOSIII

-MOSIII

-MOSIII

2SK3316 P 18500 5 1.8TO-220NIS-MOSV

P 23500 14 0.42SK2916 TO-3P(N)IS-MOSV

2SK3342 P 22250 4.5 1.0New PW-Mold-MOSV

P 23500 18 0.272SK2917 TO-3P(N)IS-MOSV

2SK3371 P 23600 1 9.0New PW-Mold-MOSV

2SK3373 500 2 3.2

2SK3374 450 1 4.6

P 23

P 23

P 21

P 22

P 23

250 20 0.1052SK3445

200 25 0.0822SK3444

150 30 0.0552SK3443

2SK3388 250 20 0.105

2SK3387 150 18 0.12

2SK3399 P 18600 10 0.75

2SK3403 P 18450 13 0.4

2SK3407 450 10 0.65

2SK3398 500 12 0.52

P 23

P 23

P 22

P 22

P 22

P 18600 10 1.02SK3437

600 10 1.02SK3438

PW-Mold

TPS

TFP

TFP

TFP

TFP

TFP

TO-220FL/SM

TO-220FL/SM

TO-220NIS

TFP

TO-220FL/SM

TFP

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

MACH

MACH

2SK3417 P 18500 5 1.8TO-220FL/SM-MOSV

-MOSV

MACH

L2--MOSV


28/40

Product Index

28

RDS(ON)max()

VDSS

(V)

ID

(A)

RDS(ON)max()

VDSS

(V)

ID

(A)





400 10 0.552SK3499

500 8 0.852SK3538

450 2 2.452SK3543

450 13 0.42SK3544

500 5 1.52SK3466

700 10 1.02SK3453 P 23

30 45 0.022SK3506

2SK3462 P 22250 3 1.7

2SK3471

2SK3472

P 23

P 23

500

450

0.5

1

18

4.6

2SK3561 P 19500 8 0.85

2SK3562 P 19600 6 1.25

2SK3563 P 19500 5 1.5

2SK3497 180 10 0.15

900 9 1.62SK3473 P 19

900 3 4.32SK3564 P 19

900 5 2.52SK3565 P 19

900 2.5 6.42SK3566 P 19

600 3.5 2.22SK3567 P 19

500 12 0.522SK3568 P 19

P 21

P 23

P 22

P 23

P 23

P 23

P 23

LSTM 150 0.67 1.72SK3670 -MOSV P 22

P 19

P 19

P 18

P 18

0.3

0.25

1.7800 6.52SK3880 -MOSIV

P 190.26TO-3P(N) 450 192SK3904 -MOSVI

P 190.44TO-3P(N)

TO-3P(N)IS

600 142SK3903 -MOSVI

0.31TO-3P(N) 500 172SK3905 -MOSVI

P 180.33TO-3P(N) 600 202SK3906 -MOSV

0.23TO-3P(N) 500 232SK3907 MACH

0.32TO-3P(N) 600 202SK3911 MACH

TO-220SIS 500 152SK3934 -MOSVI P 19

TO-220SIS 450 172SK3935 -MOSVI P 19

0.25TO-3P(N) 500 232SK3936 -MOSV P 18

0.007TO-3P(N) 75 702SK3940 U-MOSIII P 15

1.4TO-220NIS 600 62SK3947 -MOSV P 18

0.105TO-220NIS 250 202SK3994 -MOSV P 22

2.2New PW-Mold 600 32SK3975 -MOSV P 23

0.4TO-220SIS 500 132SK4012 -MOSVI P 19

1.7TO-220SIS 800 62SK4013 -MOSIV P 19

2.0TO-220SIS 900 62SK4014 -MOSIV P 19

600

200

10

25

0.75

0.082

2SK3569

2SK3625

P 19

P 22

800 7 1.72SK3633 P 19

600 7.5 1.02SK3667 P 19

60 35 0.01252SK3662 P 15

TO-220NIS

TFP

TFP

TFP

TFP

TO-3P(N)IS

TO-3P(N)

TO-3P(N)

TO-3P(N)

New PW-Mold

New PW-Mold

PW-Mini

TO-220SIS

TO-220SIS

TO-220SIS

TO-220SIS

TO-220SIS

TO-220SIS

TO-220SIS

TO-220SIS

P 15

-MOSVI

-MOSVI

-MOSVI

-MOSIV TO-220SIS 900 4 3.52SK3798

-MOSIV TO-220SIS 900 8 1.32SK3799 P 19

TO-220NIS 450

30

13

5

0.6

0.089

2SK3743

2SK3754

P 18

P 15

MACH

TO-220NIS

TO-220SIS 500 52SK3868 -MOSV

P 19

P 19

P 19

TFP 60 75 0.00582SK3842

P 15TFP 40 75 0.00352SK3843

P 1540 26 0.0182SK3846

TO-220SM

DP

P 15

P 19

U-MOSIII

-MOSVI

U-MOSIII

U-MOSIII

P 15TO-220NIS

TO-220NIS

60 45 0.00582SK3844 U-MOSIII

P 15TO-3P(N) 60 70 0.00582SK3845 U-MOSIII

U-MOSIII

U-MOSIII

0.68

1.7 P 18

40

500

26

5

0.018

1.5

2SK3847

2SK3863

P 19TO-220SIS 450 2 2.45

2.45

2SK3757

P 19TO-220SIS 450 22SK3766

P 19TO-220SIS 600 2 4.52SK3767

-MOSVI P 19TO-220SIS 600 13 0.432SK3797

TO-220SIS 450 102SK3869 -MOSVI P 19

1.3

1.7

TO-220 3P(N) 900

800

9

6.5

2SK3878

2SK3879

-MOSIV

-MOSIV TO-220FL/SM

TO-220SIS

TO-220FL/SM

TO-3P(N)

TO-220SIS

TO-220NIS

PW-Mold 100 10 0.1252SK3669 P 17

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSV

-MOSVI

-MOSV

-MOSV

-MOSV

-MOSIV

-MOSVI

-MOSVI

-MOSVI

-MOSIV

-MOSIV

-MOSIV

-MOSVI

-MOSVI

-MOSVI

-MOSV

U-MOSIII

-MOSIV

-MOSVI

-MOSVII

5

2.2

600

600

2

3

2SK4002

2SK4003

P 23

P 23

-MOSV

-MOSV

New PW-Mold2

New PW-Mold2

2.5TO-3P(N) 900 52SK3700 P 19-MOSIV

P 8

P 8

P 8

P 8

P 8

P 8

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIII

VS-6

VS-6

VS-6

VS-6

VS-6

VS-6

SOP-8

30

30

20

5.5

5.5

2.7

1.8

6

6

6

0.024

0.024

0.028

0.035

0.04

0.11

0.4

TPC6003

TPC6004

TPC6005

P 13

12

20

20

200

U-MOSIII

U-MOSIII

U-MOSIII

-MOSV

TPC6103

TPC6104

TPC6105

P 8VS-6 4.5 0.05520U-MOSIVTPC6107

TPC8012-H

0.1

0.35

0.23

0.8

1

1.7

9

60

100

100

200

250

250

600

5

3

5

5

4.5

3

1

2SK4017

2SK4018

2SK4019

2SK4020

2SK4021

2SK4022

2SK4026

0.86TO-220SIS 600 102SK4015 -MOSV P 18

0.5TO-220SIS 600 132SK4016 -MOSV P 18

P 15

P 21

P 21

P 22

P 22

P 22

P 23

-MOSV

-MOSV

-MOSV

-MOSV

L2--MOSV

L2--MOSV

SOP-8 11 0.014 P 1330U-MOSIIITPC8014

SOP-8 15 0.0066 P 1330TPC8017-HUltra-high-speed

U-MOSIII

18

11

0.0046

0.017

P 13

P 13

30

30

TPC8018-H

13 0.009 P 1330TPC8020-H

TPC8021-H

Ultra-high-speedU-MOSIII



SOP-8

SOP-8

SOP-8

SOP-8 7.5 0.027 P 1340TPC8022-HUltra-high-speed

U-MOSIII

New PW-Mold2

U-MOSIII 0.160 52SK4033 P 15New PW-Mold

U-MOSIII 0.005860 752SK4034 P 15TFP

-MOSV 0.97500 82SK4042 P 18TO-220SIS

New PW-Mold2

New PW-Mold2

New PW-Mold2

New PW-Mold2

New PW-Mold2

4.6450 12SK4023 P 23-MOSV New PW-Mold2

New PW-Mold2

P 8VS-6 4.5 0.0630U-MOSIVTPC6108

VS-6 2.5 0.09530TPC6201 U-MOSII

TO-220SIS 900 5 2.52SK3742 P 19-MOSIV


29/4029

RDS(ON)max()

VDSS

(V)

ID

(A)

RDS(ON)max()

VDSS

(V)

ID

(A)





P 8

P 8

P 8

P 8

P 8

P 8

P 8

P 8

P 8

P 8

P 8

P 8

P 8

P 8

P 8

P 8

P 8

P 8

P 8

P 8

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIV

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIV/U-MOSIII

VS-8 20 2.7TPCF8301

VS-8 20 3TPCF8302

VS-8 20 3TPCF8303

U-MOSIV VS-8 30 3.2TPCF8304

VS-8 30/30 3.2/4TPCF8402

VS-8 20 3TPCF8A01

VS-8 20

20

20

20

2.7

5.6

5

5

TPCF8B01

PS-8 30 7.2TPCP8001-H

U-MOSIV PS-8

PS-8

20 9.1TPCP8002

TPCP8101

PS-8

PS-8

PS-8

PS-8

30

30

4.2

5.5

TPCP8201

TPCP8202

TPCP8301

TPCP8302

PS-8 30/30 3.4/4.2TPCP8401

PS-8

PS-8

12/20

40/40

5.5/0.1

3.4/4.7

TPCP8402

TPCP8403

PS-8 32/50 6/0.1TPCP8J01

VS-8 30 6TPCF8104

VS-8 20 3TPCF8201

U-MOSIV

-MOSVI

U-MOSIV

U-MOSIV

0.11

0.059

0.058

0.072

0.072/0.05

0.049

0.11

0.016

0.01

0.030

0.05

0.023

0.031

0.033

0.048/0.072

0.170/0.040

0.038/3

0.035

P 16TO-220(W) 60 70TK70D06J1 0.0064

0.028

0.049



P 19TO-3P(W) 500 15TK15H50C 0.4

-MOSVI P 19TO-3P(W) 500 19TK19H50C 0.3

-MOSVI P 19TO-3P(W) 500 20TK20H50C 0.27

-MOSVI P 19TO-3P(W) 600 16TK16H60C 0.4

-MOSIV P 19TO-3P(W) 900 7TK07H90A 2.0

-MOSIV P 19TO-3P(W) 900 9TK09H90A 1.3

13

10

0.0007

0.02

P 13

P 13

30

30

U-MOSIII

U-MOSIII

TPC8107

TPC8109

SOP-8

SOP-8

0.025

0.012

0.006

0.0045

P 13

P 13

P 13

P 13

30

30

30






U-MOSIII 40 8

11

13

18

U-MOSIV

U-MOSIV

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIII

U-MOSIV/U-MOSIII 0.033/0.026

TPC8208 P 1320 5

Power Mosfets

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