Industry-Relevant Research and Development in S. Tanaka Lab
Shuji Tanaka, Professor, IEEE FellowDepartment of RoboticsMicrosystem Integration CenterTohoku [email protected]
mems tohoku
Self-introduction of S. Tanaka Laboratory
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We are international and prefer diversity.• Our members come from 10 different countries; Japan,
China, Vietnam, Pakistan, Germany, Indonesia, Algeria,Chile, France and India.
• There are 9 women.• The age of our members
ranges from 20 to 75. Thereare 7 senior members olderthan 60 years.(As of March 2018)
Please visit our website!
Division of Mechanical Engineering
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Material Science: #43
Mathematics: #101-150
Mechanical Engineering: #38We are World Premier InternationalDivision, attracting students all overthe world.
QS World Ranking 2019
MEMS Facilities in Aobayama Campus
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• From proof-of-concept on small pieces to prototype development on 4 or6 inch wafers
• Prototyped devices in Microsystem Integration Center can be basicallyutilized for business, i.e. as commercial samples and provisionalproducts.
• For mass-production in small-to-medium volume, developed technologycan be smoothly transferred to our partner foundry, MEMS Core inSendai, Japan.
S. Tanaka Lab’s cleanroom
Micro/Nano-Machining Research & Education Center
Microsystem Integration Center
Small piece
4 inch wafer
6 inch wafer
We can work with and support industry at any R&D phases.
Div. Mech. Eng.
S. Tanaka Laboratory: Research Topics
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Physical world
Human world
Sensing
Actuation
Micro/Nano system technology
Connection
Cyber world
Virtual world
Tactile sensor, Gyroscope, Ultrasonic sensor, Microphone
Micromirror, Optical stage,RF MEMS switch
e.g.
e.g.
e.g. Acoustic wave filter
0100111000101001
0100111000101001
0100111000101001
NaturallyUnconsciouslyComfortablyAffordably
RoboticsVR
AR
IoT
System integration
Functional materials
MEMSCore competence
Integration technology,Wafer-level packaging,Piezoelectric thin films,Microfabrication tools
e.g.
Presented by Prof. Muroyama
A part of our ongoing research will be introduced…
Laser Speckle Reduction Device (Ricoh)
7 in JSTnews, April 2019
A nanofabricated optical phaseplate is driven by a PZT MEMSactuator.
Mr. Fujimura at Ricoh Industrial Solutions, Visiting Researcher of S. Tanaka Lab
Outstanding poster paper award in IDW ‘18
Micromirror Device (Stanley Electric)
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Stanley, 応用物理学会2014春, 17p-E9-7
Resonant axis:±14°
Non-resonant axis:±8°at 60 V
Stanley, Tokyo Motor Show 2017
Epitaxial PZT Family on Silicon
SRO(0.393 nm)
Si(0.5431 nm)
YSZ(0.5139 nm)
CeO2(0.5411 nm)
LSCO (0.3805 nm)(√2LSCO = 0.5380 nm)
PZT(a, b-axis length: 0.404 nm,c-axis length: 0.415 nm)
45 ˚
[100] [010]
[001
]
9 Epitaxial structure of PZT on Si
20 25 30 35 40 45 50 55 60 65 70 75 80 852θ[deg]
Slow cooling
CeO2(200)
PZT(200)
SRO (200)
PZT(002)
P
PZT(003)Si (400)
YSZ(200)
PZT(002)&(200)
PZ
PZT(003) Si (400)
PZT(110)
SRO (200)
Inte
nsity
[cps
] (lo
garit
hmic
disp
lay)
Fast cooling(a)PZT(001)&(100)
PZT(001)&(100)
c-axis (not a-axis) orientation is obtained by fast cooling after sputtering.
XRD spectrum of epi-PZT on Si
S. Yoshida … S. Tanaka, IEEE Trans. Ultrason. Feroelectr. Freq. Contr., 61 (2014) 1552-1558
Comparison of Sputtered PZT Thin Films on Si
10[1] S. H. Baek … B. Eom, Science 334, 958 (2011) [2] F. Calame, P. Muralt, Appl. Phys. Lett. 90, 062907 (2007)[3] N. Ledermann et al., Sens. Actuators A, 105, 162 (2003)
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orm
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FOM =(e31,f)2
ε33e31,f ε33
pMUT for Range Finder and Fingerprint Sensor
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Z. Zhou, S. Yoshida, S. Tanaka, Transducers 2017
“I attempted to fool the new Samsung Galaxy S10's ultrasonic fingerprint scanner by using 3D printing. I succeeded.” by darkshark (April 4, 2019)
Vivo’s XPlay 7 (2017)
Qualcomm’s fingerprint sensor
In-display ultrasonic finger print sensor using pMUT
Samsung’snew Galaxy S10
↓
3D-printed fake fingerprint
Z. Liu, S. Yoshida, S. Tanaka, Transducers 2019
pMUT using Epi-PZT2
mm
dee
p
Sputter Tool for Epi PZT
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Epi-PZT buffer layer on 4 inch wafer prepared by sequential
sputter depositionOriginally-designed sputter tool for Epi-PZT in Nishizawa Center
We are working with our customers for the development of a practical sputter tool as well as pMUT.
N. Nishizawa … S. Tanaka,Trans. IEEJ SM, 136 (2016) 437-442
ALD Tool for Multiple Materials
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Our ALD tool has been commercialized by TechnoFine, where our former student is working, and 4 tools were shipped to date.
A high-temperature ALD processmonitor using Langasite is alsobeing developed with a startup.
The ALD tool was used forcollaboration with multiplecustomers.
BAW Filter: Most Growing MEMS
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Million US$
http://www.yole.fr/iso_album/illus_status_mems_industry_top_mems_ranking_yole_may2018.jpg
1st Broadcom (former Avago Technologies)
5th Qorvo (TriQuint Semiconductor + RF Micro Device)
田中秀治, BroadcomをMEMS売上高トップにしたデバイスとは,日経 xTECH 2018/07/09
BAW/SAW Filters in Smartphone
teardown.com
EE Times
SAW filter
RF frontend (Amplifiers + Filters)Avago, Skyworks and TriQuint
Power amplifierSwitch
Apple iPhone 6 Plus Apple iPhone X
Broadcom and Skyworks (partly RF360) are adopted in iPhone X.
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Continuous Requirements for BAW/SAW Filters
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Band 25 Tx filterT. Takai et al. (Murata Mfg.), IEEE IMS 2016
Up link: 1850〜1915 MHz (BW 65 MHz)Down link: 1930〜1995 MHz (BW 65 MHz)Guard band: 15 MHz → Extremely narrow
Low band Mid band1 GHz 3 GHz 4 GHz 5 GHz
600/700 MHz 3.3~4.2 MHz 4.4~5.0 GHzBand n77 3.3~4.2 GHzBand n78 3.3~3.8 GHzBand n79 4.4~5.0 GHz
Balazs Bertenyi (Nokia),Chairman of 3GPP RAN
• Lager power handling ← LTE (Overlap of subcarrier)• Smaller nonlinearity (Inter Modulation Distortion) ← Carrier aggregation• Improvement of basic performance (IL, cut-off characteristic and TCF)
← Difficult-to-deal bands (e.g. LTE Band 25 and Band 11+21)• Higher frequency for 5G (3.5~5 GHz)
Fever of BAW/SAW is Crazy in China.
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RF front-end modules with SAW/BAW filters are dominated by American and Japanese companies.SAWMurata Mfg., Skyworks (former Panasonic),RF360 (former Epcos), Qorvo (former TriQuint),Taiyo Yuden (former Fujitsu)BAW (FBAR and SMR)Broadcom (former Avago), Qorvo, RF360,Taiyo Yuden, Skyworks
ROFS Microsystems (诺思(天津)微系統)Mianyang City (四川省綿陽市) has decided to invest 12.8B RMB in ROFSMicrosystems to construct an FBAR factory. A revenue of 15B RMB, aproduction over 10B devices and an employment over 3000 are expected.
San’an Optoelectronics (三安光電)San’an Optoelectronics has decided 33.3B RMB investment over 7 years toconstruct factories of LED, power amplifiers, SAW/BAW filters etc. inQuanzhou City (福建省泉州市).
Photograph: Reuters
SAW or BAW?
Andreas Link, Phil Warder (TriQuint Semiconductor), “Golden Age for Filter Design,”IEEE Microwave Magazine, August 2015, pp. 60-72
180.5 GHz 1.5 GHz 2.5 GHz
Hetero Acoustic Layer SAW
New Types of SAW Device
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BAW
Longitudinal wave
Fast shear wave
Slow shear wave
SAW
Longitudinal leaky SAW
Leaky SAW
Rayleigh SAW
Phas
e ve
loci
ty
High velocity and high coupling, but leaky (lossy)
Confined near surfaceby HAL structure
Acoustic bulk radiation (loss)
LSAW/LLSAW
HAL (Hetero Acoustic Layer) SAW devices
Thinned LT or LN (t < λ)
Conventional SAW device
LT or LN
SiO2etc.Si, quartz,
sapphire etc. Si, quartz, sapphire etc
Thin LT/Quartz Hetero Acoustic Layer SAW
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M. Kadota, S. Tanaka, IEEE International Ultrasonics Symposium 2017
400 500 600
BW 5.0%Z ratio 82 dBλ 7.76 µm
Cu/42oYX-LT
Impe
danc
e [Ω
] Cu/20oYX-LT/40oY90oXquartz
800 900 10001
10
100
1000
10000
100000
Frequency [MHz]
BW 4.2%Z ratio 51 dBλ 3.78 µm
C
51 dB
82 dB
Quartz
LT (typically 1 μm)
Sigle digit TCF of LT/quartz HAL SAWIEEE IFCS 2018
“HAL SAW” is our brand name,being licensed to our customer.
↑The production technology of HAL wafers is being developed with a local company.
Conclusive Message
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• The introduction of a part of our ongoing collaborative projectsshows our strong commitment and contributions to industry.
• Our customers include domestic listed company, foreigncompany, small local company and startup.
• Another fact is about 200 company×day guests to ourlaboratory in the last year.
Collaboration with Fraunhofer ENAS will further strengthen ourcapability of R&D, benefitting both sides and industry.
Conference for Business Development based on MEMS Technology
24-25 April 2019
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General Chair Shuji Tanaka
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