Yale University, New Haven, CT USA Brookhaven National Laboratory, Upton, NY USA
description
Transcript of Yale University, New Haven, CT USA Brookhaven National Laboratory, Upton, NY USA
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S. Dhawan, O. Baker, H. Chen, R. Khanna, J. Kierstead, F. Lanni, D. Lynn, A. Mincer,
C. Musso S. Rescia, H. Smith, P. Tipton, M. Weber
Progress on DC-DC converters for SiTracker for SLHC
Yale University, New Haven, CT USABrookhaven National Laboratory, Upton, NY USA
Rutherford Appleton Laboratory, Chilton, Didcot, UKNational Semiconductor Corp, Richardson, TX, USA
New York University, New York, NY, USA
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4088 Cables10 Chip Hybrid – SCT
Module for LHC
Counting House
3.5 V
20 Chip Hybrid – Si TrModule for Hi Luminosity
Cable Resistance = 4.5 Ohms
1.5 amps
2.4 amps
X 10 DC-DCPower
Converter
20 Chip Hybrid – Si TrModule for Hi Luminosity
1.3 V
1.3 V
2.4 amps
10.25 V
12.1V
14.08 V13 V
Power Delivery with Existing SCT Cables (total = 4088)Resistance = 4. 5 Ohms
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3.5 V @ 1.5 amps 1.3 V @ 2.4 amps 1.3 V @ 2.4 ampswith x10 Buck
switcher. Efficiency90%
Voltage @ Load
Po
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r E
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Efficiency
Voltage Drop = 6.75 V
Voltage Drop = 10.8V
0.24 ampsVoltage Drop = 1.08 V
Length of Power Cables = 140 Meters
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Agenda
Learning from Commercial Devices Buck > Voltage, EMI Plug In Cards for ABCN2.5 Hybrids - Noise Tests @Liverpool
Require Radiation resistance & High Voltage operation Thin Oxide High Voltage with Thin Oxide ? DMOS, Drain Extension 12V @ 5 nm , 20V @ 7 nm
HEMT has no Oxide – Higher Voltage ? 200 Mrads 20V
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Buck Regulator Efficiency after 100 Mrad dosage
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Output Current Amps
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AfterExposure
BeforeExposure
Enpirion EN5360 Found out at Power Technology conference 0.25 µm Lithography Irradiated Stopped on St. Valentines Day 2007 No effects after 100 Mrads Noise tests at Yale, RAL & BNL. 20 µm Al is good shield for Air Coils All other devices failed, even other part numbers from Enpirion We reported @ TWEPP 2008 - IHP was foundry for EN5360 What makes Radiation Hardness ? Chinese Company Devices
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ControllerLow Voltage
Power Stage Drivers
V reference
Pulse Width Controller
Buck Safety
Synchronous Buck Converter
Power Stage-High Volts
Control Switch 30 mΩ
Synch Switch20 mΩ
Control Switch: Switching Loss > I2
Synch Switch: Rds Loss Significant
Error Amp
100 ns
Synch
Control
900 ns
Control
Synch
Minimum Switch ON TimeLimits Max Frequency
500 ns 500 ns
Vout = 10%
Vout = 50%
80.5
78.4
75.2
Input Voltage (8-14 V)
Eff
icie
nc
y (
%)
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Control Switch
EMI Antenna Loops
Current is switched from Q1 to Q2 with minimum Impedance change
Since the switching noise is generated primarily by the power stage of the supply, careful layout of the power components should take place before the small signal components are placed and routed. The basic strategy is to minimize the area of the loops created by the power components and their associated traces. In the synchronous buck converter shown above the input (source) loop #1 ideally consists of a DC current with a negligible AC ripple. Loop numbers 2 and 3 are the power switch loops. The current in these loops is composed of trapezoidal pulses with large peaks and fast edges (di/dt and dv/dt). The area of these loops will be determined primarily by how close together the power components, the inductor, and the capacitors Cin and Cout can be placed. The closer the components, the shorter the PCB traces connecting them, and therefore the smaller loop area.
Q2
Q1
Advice form a company application note
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Load0.25 µm Technology Test ASIC 2.5 V @ ~ 3 amps. Actual 5 amps 0.13 µm Technology ASIC 1.3 V @ ?
Vin = 2.5 – 17 VVout = 2.5 / 1.3 V
Enable
Plug in Card – Power Yale Model 2151
GND
GND
Power Good
RequirementsVoltage Ratio > 8For Good Efficiency Iout >3 ampsAir Coil / MagneticsRadiation Hardness
Small Plug-in Card
Output VoltageTolerance +/- 5%
Absolute Max 10%For Long Lifetime
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4 layersLayer1: Top Coil with no connection - ShieldLayer2: coil Connect in seriesLayer3: coil Connect in seriesLayer4: Bottom Coil with no connection- Shield
Spacing between Layer 2 & 3 = 14 mills ( 0.35 MM) Proximity EffectTop & Bottom can be more as there is no loss from these
Spiral Coils Resistance in mΩ
Top Bottom
3 Oz 57 46
10 mil Cu 19.4 17
Coupled InductorConnected in Series
Shielded Buck Inductor
Shielding Spiral – One end to GND
Shielding Spiral – One end to GND
9Yale University April 09, 2009 Model 2151_Max8654Yale University April 09, 2009
Power Out
Power INEnable / DisablePower Good Out
Kelvin points for Vin & Vout
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MAX8654 with embedded coils (#12), external coils (#17) or Renco Solenoid (#2) Vout=2.5 V
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MAX #12, Vin = 11.9 V MAX #17, Vin = 11.8 V MAX #2, Vin = 12.0 V
PCB embedded Coil
Copper Coils
Solenoid
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Plug In Card: DC-DC Powering 2 Different ICs 3 Different Coils
Monolithic: 14V, 8A, 1.2MHzMultichip: 16V, 8A, 1.5MHz
Embedded 3 oz Cu Etched Cu Foils 0.25 mmSolenoid without Ferrite
Coil Board # Common Power Input Noise
Mode Choke To Dc_DC Electrons rms
Solenoid Max # 2 No 881
" " " 885
Copper Coil IR # 17 No Switching 666
" " Yes " 634
" " Yes Linear 664
Embedded Max 12 No Linear 686
" " Yes " 641
All Channels
Trimmed
" " Yes " 648
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Sensor 1 cm from Coil
Shield 20 µm Al Foil Noise NO change with Plug in cardon top
Noise Same with Linear or DC - DC
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Controller : Low Voltage
High Voltage: Switches –
LDMOS, Drain Extension, Deep Diffusion etc
>> 20 Volts HEMT GaN on Silicon, Silicon Carbide, Sapphire
Can We HaveHigh Radiation Tolerance & Higher Voltage Together ???
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Thin Gate Oxide
Book ‘Ionizing Radiation Effects in MOS Oxides’ Author Timothy R. Oldham
Thin oxide implies lower operating voltage
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High performance RF LDMOS transistors with 5 nm gate oxide in a 0.25 μm SiGe:C BiCMOS technology: IHP MicroelectronicsElectron Devices Meeting, 2001. IEDM Technical Digest. International2-5 Dec. 2001 Page(s):40.4.1 - 40.4.4
LDMOS StructureLaterally DiffusedDrain Extension
High Voltage / high FrequencyMain market. Cellular base stations
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R. Sorge et al , IHP Proceedings of SIRF 2008 ConferenceHigh Voltage Complementary Epi Free LDMOS Module with 70 VPLDMOS for a 0.25 μm SiGe:C BiCMOS Platform
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IBM Foundry Oxide Thickness
Lithography Process Operating Oxide
Name Voltage Thickness
nm
0.25 µm 6SF 2.5 5
3.3 7
0.13 µm 8RF 1.2 & 1.5 2.2
2.2 & 3.3 5.2
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Company Device Process Foundry Oxide Time in Dose before Observation
Name/ Number Name Thickness Seconds Damage seen Damage Mode
Country nm
IHP ASIC custom SG25V GOD IHP, Germany 5 53 Mrad slight damage
XySemi FET 2 amps HVMOS20080720 China 7 52 Mrad minimal damage
XySemi XP2201 HVMOS20080720 China 7 In Development
XySemi XPxxxxHVMOS20080720 China 7
In Development Synch Buck
XySemi
XP5062
China
12.3
800
44 krad
loss of Vout regulation
TITPS54620 LBC5 0.35 µm 20 420 23 krad abrupt failure
IR IR3841 9 & 25 230 13 Krads loss of Vout regulation
Enpirion EN5365 CMOS 0.25 µm Dongbu HiTek, Korea 5 11,500 85 krad
Increasing Input Current,
Enpirion EN5382 CMOS 0.25 µm Dongbu HiTek, Korea 5 2000 111 Krads loss of Vout regulation
Enpirion EN5360 #2 SG25V (IHP) IHP, Germany 5 22 Days 100 Mrads Minimal Damage
Enpirion EN5360 #3 SG25V (IHP) IHP, Germany 5 10 Days 48 Mrads Minimal Damage
Non IBM Foundry ICs
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For Higher Radiation Resistance Oxide Thickness is predominant Effect Others Epi Free processing is Good ? Oxide Processing is standard ?????
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From China
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XY Semi (VD = 12V)2 Amp FET- HVMOS20080720 Process
00.020.040.060.08
0.10.12
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Vg (Volts)
Id (A
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1 Mrad
5.4 Mrad
33 Mrad
52 Mrad
IHP PMOS TransistorVG versus ID at selected Gamma Doses
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Pre-Irradiation
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IHP NMOS Transistor
VG versus ID at Selected Gamma Doses
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Depletion ModeNormally ON
Enhancement ModeNormally OFF
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GaN for Power Switching
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RF GaN 20 Volts & 0.1 amp 8 pieces: Nitronex NPT 25015: GaN on Silicon Done Gamma, Proton & Neutrons 65 volts Oct 2009
2 pieces: CREE CGH40010F: GaN on siC
6 pieces: Eudyna EGNB010MK: GaN on siC Done Neutrons Switch GaN International Rectifier GaN on Silicon Under NDA
Gamma: @ BNLProtons: @ LansceNeutrons: @ U of Mass Lowell
Gallium Nitride Devices under Tests
Plan to Expose same device toGamma, Protons & Neutrons
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Nitronex 25015 Serial # 1
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-2.5 -2.3 -2.1 -1.9 -1.7 -1.5 -1.3 VGS Volts
ID A
mps 4.2 Mrad
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17.4 Mrad
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Source
HEMTPulse
Generator0.1 – 2 MHz
50 % Duty Cycle
July 28. 2009 FET Setup for Proton Radiation Exposure @ LANSCE
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~ 0.070 AmpsPower SupplyV out = 20
Drain
Gate
100
0 to -5 V
Powered FET
DMMDC mV
330 2 Watts 1 Ω
GND
50 ΩTerminator 2 Shorted
FETs
G
DS
Pomona Box
Reading = ~ 0.035 Amps@ 50% Duty Cycle
No change in the average current for 200 Mega rads
30 meter Coax
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IR’s basic current GaN-on-Si based device structure is a high electron mobility transistor (HEMT), based on the presence of a two dimensional electron gas (2DEG) spontaneously formed by the intimacy of a thin layer of AlGaN on a high quality GaN surface as shown in Figure 1. It is obvious that the native nature of this device structure is a HFET with a high electron mobility channel and conducts in the absence of applied voltage (normally on). Several techniques have been developed to provide a built-in modification of the 2DEG under the gated region that permits normally off behavior.
Aside from providing high quality, reliable and a low-cost CMOS compatible device manufacturing process, the GaNpowIR technology platform also delivers dramatic improvements in three basic figures of merit (FOMs), namely specific on-resistance RDS(on), RDS(on)*Qg and efficiency*density/cost.
28Intel won’t disclose any details till product is announced
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ConclusionsLearned from commercial Devices, Companies & Power conferences Can get high Radiation Tolerance & Higher VoltageHigh Frequency > Smaller Air coil > Less Material Goal: ~20 MHz Buck, MEM on Chip size 9 mm x 9mmPower SOC: MEMs Air Core Inductor on Chip Study Feasibility 48 / 300V Converters Irradiation: Run @ Max operating V & I.
Limit Power Dissipation by Switching duty cycleOnline Monitoring during irradiation for faster resultsYale Plug Cards can be loaned for EvaluationCollaborators are Welcome
30The End Neither it on Top of the World
Working on Power Supply Is not Glamorous