VOUT2 BD81870 Datasheet -...

〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays

.

1/32

TSZ02201-0313AAF00650-1-2 © 2016 ROHM Co., Ltd. All rights reserved. 25.May.2018 Rev.002 TSZ22111 • 14 • 001

www.rohm.com

Single-chip Type with Built-in FET Switching Regulator Series Step-up / Inverted 2ch Switching Regulator BD81870EFV-M

General Description

BD81870EFV is current mode step-up and inverted 2 channel switching regulator with built in FET.

Features AEC-Q100 Qualified(Note 1) Wide input voltage range 2.5V to 5.5V High Frequency 2.1MHz Built-in 300mΩ/22V Nch FET and 300mΩ/15.5V Pch

FET. Built-in 150mΩ high-side switch for boost channel with

soft-start function Independent ON/OFF signal, Built-in discharge switch

Circuits protection：OCP, SCP, OVP, UVLO, TSD

(Note 1:Grade2)

Applications Car navigation panel, Car instrument panel

Typical Application Circuit

Special Characteristics Reference Accuracy： ±3%(Ta=-40 to 105°C)

Switching Frequency： ±14.3%(Ta=-40 to 105°C)

Key Specification

Input voltage range： 2.5V to 5.5V

Step-up Output voltage range：

VDD x 1.24 to 18.0V

Inverted Output voltage range：

VDD - 13.0V to -1.0V

Switching Frequency： 2.1MHz(Typ.)

Nch FET ON resistance： 300mΩ(Typ.)

Pch FET ON resistance： 300mΩ(Typ.)

Operating Temperature range： -40°C to +105°C

Package W (Typ.) x D (Typ.) x H (Max.)

HTSSOP-B20 6.5mm x 6.4mm x 1.00mm

(TOP VIEW)

BD81870

(HTSSOP-B20)

VDDP

VDDP

VDDP

HS2L

LX2

GNDP

DIS2

GNDA

LX1

DIS1

NON1

VREF

N.C.

HSWON

SEQON

STB1

STB2

VOUT2

VOUT1

VDDA

VDD

VDD

INV2

VOUT2

Figure 1. Application Circuit

HTSSOP-B20

Datasheet

http://www.rohm.com/

2/32

TSZ02201-0313AAF00650-1-2 © 2016 ROHM Co., Ltd. All rights reserved. 25.May.2018 Rev.002

www.rohm.com TSZ22111 • 15 • 001

BD81870EFV-M

Contents General Description ........................................................................................................................................................................ 1

Features.......................................................................................................................................................................................... 1

Applications .................................................................................................................................................................................... 1

Typical Application Circuit ............................................................................................................................................................... 1

Special Characteristics ................................................................................................................................................................... 1

Key Specification ............................................................................................................................................................................ 1

Package .......................................................................................................................................................................................... 1

Pin Configuration ............................................................................................................................................................................ 3

Pin Description ................................................................................................................................................................................ 3

Block Diagram ................................................................................................................................................................................ 4

Description of each Block ............................................................................................................................................................... 5

Absolute Maximum Ratings ............................................................................................................................................................ 7

Thermal Resistance ........................................................................................................................................................................ 8

Recommended Operating Ranges ................................................................................................................................................. 8

Electrical Characteristics................................................................................................................................................................. 9

Typical Performance Curves ......................................................................................................................................................... 11

Timing Chart 1 .............................................................................................................................................................................. 17

Timing Chart 2 .............................................................................................................................................................................. 18

Application Circuite components list ............................................................................................................................................. 19

Usable Component Range............................................................................................................................................................ 20

Selecting Application Components ............................................................................................................................................... 21

Notice for application .................................................................................................................................................................... 23

Layout Guideline ........................................................................................................................................................................... 25

Operational Notes ......................................................................................................................................................................... 27

Ordering Information ..................................................................................................................................................................... 30

Marking Diagram .......................................................................................................................................................................... 30

Physical Dimension, Tape and Reel Information ........................................................................................................................... 31

Revision History ............................................................................................................................................................................ 32

3/32



BD81870EFV-M

Pin Configuration (TOP View)

BD81870

(HTSSOP-B20)

VDDP

VDDP

VDDP

HS2L

LX2

GNDP

VOUT2

DIS2

GNDA

INV2

LX1

DIS1

NON1

VREF

N.C.

HSWON

SEQON

STB1

STB2

VDDA

Figure 2. Pin Configuration

Pin Description

PIN No. SYMBOL FUNCTION PIN No. SYMBOL FUNCTION

1 VDDA Analog Power supply pin 11 VDDP Power supply pin

2 STB2 Step-up DC/DC ON/OFF pin 12 VDDP Power supply pin

3 STB1 Inverted DC/DC ON/OFF pin 13 VDDP Power supply pin

4 SEQON Sequence ON/OFF pin 14 HS2L High-side switch output pin

5 HSWON High-side switch ON/OFF pin 15 LX2 Step-up DC/DC switching pin

6 N.C. ― 16 GNDP Step-up DC/DC GND pin

7 VREF Inverted DC/DC reference output pin 17 VOUT2 Step-up DC/DC output sense pin

8 NON1 Inverted DC/DC feedback pin 18 DIS2 Step-up DC/DC discharge pin

9 DIS1 Inverted DC/DC discharge pin 19 GNDA Analog GND pin

10 LX1 Inverted DC/DC switching pin 20 INV2 Step-up DC/DC feedback pin

- EXP-PAD The EXP-PAD of the center of product connect to GND.

EXP-PAD

4/32



BD81870EFV-M

Block Diagram

GNDA

LX1

DIS1

SEQON

STB1

STB2

HSWON

HS2L

LX2

VOUT2

NON1

VREF

INV2

VOUT1

VOUT2

VDDA

VDDP

For Analog block

VOUT1

GNDP

Control Block

OCP

OCP

UVLO

TSD

PROTECT to Control

High side switch

SS2

OSC2.1 MHz

SS1

SS0

SS

_______STB1

Voltage Reference

SS1

VOUT2

ERROR AMP

ERROR AMP

_______STB1

OVP

OVP

VDD

SCPTimer

Phase Compensation

Phase Compensation

SS2

SS0

SS1

CH1Inverting

Timing Control(Current Mode)

SS2

CH2Step up

Timing Control(Current Mode)

DIS2

0.8V

OCP

Figure 3. Block Diagram

5/32



BD81870EFV-M

Description of each Block

1. Control Block This block controls ON/OFF of each channels: Inverted DC/DC, step-up DC/DC and High-side switch channel. SEQON pin and HSWON pin set ON/OFF sequence. SEQON pin and HSWON pin must be short to VDD or GND. These pins are not fixed with internal pull-up or pull-down resistance.

Control Input Output Channels

UVLO/TSD internal signal

SEQON HSWON STB1 STB2 Inverted DC/DC

Step-up DC/DC

High-side switch

H - - - - OFF OFF OFF

L L L L/H L/H STB1 STB2

L L H L/H L/H STB1 STB2 ON

L H L L/H (Note 1) Internal ON/OFF sequence

L H H L/H (Note 1) Internal ON/OFF sequence ON (Note 1) refer to the item of 12. Output discharge

2. Voltage Reference

This block generates reference voltage for inverted and step-up channels. 3. UVLO

This block is for under voltage lockout protection. 4. TSD

This block is for protection for abnormal temperature. When the junction temperature exceeds 175°C (typ.), all output channels go shutdown. When the junction temperature falls below 150°C (typ.), the IC restarts.

5. OSC

This block is the oscillator for internal clock. 6. Soft Start(SS)

This block is the circuit for preventing in-rush current by increasing DC/DC converter output gradually. It generates internal soft-start reference for inverted DC/DC, step-up DC/DC and high-side switch.

7. SCP Timer

This block is a timer-latch type short circuit protection. When inverted or step-up DC/DC is in operation, after 31msec (typ.) with SCP detected, all output channels go off-latch. When UVLO or TSD is detected, off-latch is released. In SEQON=L mode, when STB1 and STB2 are low, off-latch is released. In SEQON=H mode, when STB1 is low, off-latch is released. In inverted DC/DC, when NON1 pin is above error amp reference 0.0V, error amp output goes high and SCP is detected. In step-up DC/DC, when INV2 pin is below error amp reference 0.8V, error amp output goes high and SCP is detected.

8. High Side Switch This block prevents step-up channel output to become as high as VDD level by switching off the power supply of the step-up channel. At the start-up timing of step-up channel, soft-start function of high-side switch prevents in-rush current. When high-side OCP is detected, high-side switch is off-latch. When high-side switch channel in OFF conditions, off-latch is released.

9. ERROR AMP This block monitors feedback voltage. It provides voltage to control PWM.

10. Timing Control

This block controls DUTY by monitoring ERROR AMP output voltage.

11. OCP This block prevent malfunction at over current by limiting internal FET current. When OCP is detected and duty is limited, Inverted DC/DC output increase or step-up DC/DC output decrease. So, SCP is detected and all output channels are OFF by off-latch function above.

6/32



BD81870EFV-M

12. Output discharge Inverted DC/DC output capacitor is discharged through DIS1 pin when STB1 is low. The discharge function can be disabled when STB2=H in SEQON=H mode. The discharge function can NOT be disabled in SEQON=L mode because STB2 controls ON/OFF of Step-up DC/DC. Step-up DC/DC output capacitor is discharged through DIS2 pin when high-side switch is OFF. In conditions where HSWON=H, when UVLO of VDD is released, high-side switch is ON. So, discharge function of step-up DC/DC output capacitor is disabled, even if step-up DC/DC is OFF. By cutting the route from DIS2 pin to the capacitor, discharge function can be disabled. OVP function is not disabled because DIS2 pin is used to monitor the output voltage. In this case, DIS2 pin should be shorted to GND.

13. OVP

By detecting high level of output voltage, this block stops switching and prevent malfunction by over voltage stress. In inverted DC/DC, when DIS1 pin is -14.5V (typ.) from VDDA level, switching stops. When DIS1 pin voltage rises, switching starts again. OVP of inverted DC/DC has hysteresis of 1.0V (typ.). In step-up DC/DC, when VOUT2 in is 20.5V (typ.) from GND level, switching stops. When VOUT2 pin voltage falls, switching starts again. OVP of step-up DC/DC has hysteresis of 1.5V (typ.).

7/32



BD81870EFV-M

Absolute Maximum Ratings

Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings.

Parameter Symbol

Limits

Unit

MIN TYP MAX

Supply Voltage VDDA, VDDP -0.3 - 7 V

Input Voltage

STB1, STB2, SEQON, HSWON -0.3 - 7 V

NON1, INV2 -0.3 - 7 V

Output Voltage

VREF -0.3 - 7 V

LX1 VDDP -15.5

- VDDP +0.3

V

DIS1 VDDP -15.5

- VDDP +0.3

V

HS2L -0.3 - 7 V

LX2 -0.3 - 22 V

VOUT2 -0.3 - 22 V

DIS2 -0.3 - 22 V

Operating Ambient Temperature Range

Ta -40 - 105 °C

Storage Temperature Range

Tstg -55 - 150 °C

Maximum Continuous Junction Temperature

Tjmax - - 150 °C

8/32



BD81870EFV-M

Thermal Resistance (Note 1)

Parameter Symbol Thermal Resistance (Typ)

Unit 1s(Note 3) 2s2p(Note 4)

HTSSOP-B20

Junction to Ambient θJA 143.0 26.8 °C/W

Junction to Top Characterization Parameter(Note 2) ΨJT 8 4 °C/W

(Note 1)Based on JESD51-2A(Still-Air) (Note 2)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside

surface of the component package. (Note 3)Using a PCB board based on JESD51-3.

Layer Number of Measurement Board

Material Board Size

Single FR-4 114.3mm x 76.2mm x 1.57mmt

Top

Copper Pattern Thickness

Footprints and Traces 70μm

(Note 4)Using a PCB board based on JESD51-5,7.

Layer Number of Measurement Board

Material Board Size Thermal Via(Note 5)

Pitch Diameter

4 Layers FR-4 114.3 mm x 76.2 mm x 1.6 mmt 1.20 mm Φ0.30 mm

Top 2 Internal Layers Bottom

Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness

Footprints and Traces 70μm 74.2mm x 74.2mm 35μm 74.2mm x 74.2mm 70μm

(Note 5) This thermal via connects with the copper pattern of all layers.

Recommended Operating Ranges (Ta=-40°C to 105°C)

Parameter Symbol

Limits

Unit

MIN TYP MAX

Power supply voltage VDD 2.5 - 5.5 V

Inverted output voltage VOUT1 VDD - 13 - -1.0 V

Step up output voltage VOUT2 VDD

x 1.24 - 18 V

9/32



BD81870EFV-M

Electrical Characteristics (Unless otherwise noted, Ta=25°C, VDD=3.6V)

Parameter Symbol Limits

Unit Condition MIN TYP MAX

Under Voltage Lockout Threshold

UVLO release voltage UVL_REL 2.1 2.3 2.5 V VDD sweep up

UVLO detect voltage UVL_DET 1.7 1.8 1.9 V VDD sweep down

Oscillator

Oscillating frequency FOSC 1.8 2.1 2.4 MHz -40<Ta<105°C

LX1 Max Duty DMAX1 80 86 - %

LX2 Max Duty DMAX2 80 86 - %

Error AMP, VREF

VREF voltage VREF 0.985 1.000 1.015 V VREF- NON1 feedback resistance R1B 20kΩ

VREF voltage range VREF_R 0.970 1.000 1.030 V -40<Ta<105°C VDD=2.5 to 5.5V

INV2 voltage VINV 0.788 0.800 0.812 V

INV2 voltage range VINV_R 0.776 0.800 0.824 V -40<Ta<105°C VDD=2.5 to 5.5V

CH1 Soft start time TSS1 2.5 3.2 3.9 ms

CH2 Soft start time TSS2 2.5 3.2 3.9 ms

Internal FET

LX1 PMOS ON resistance RLX1 - 300 480 mΩ

DIS1 discharge resistance RDIS1 - 100 160 Ω VSTB1=0V, IDIS1=-1mA

NON1 discharge resistance RNON1 - 150 240 Ω VSTB1=0V, INON1=1mA

VREF discharge resistance RVREF - 150 240 Ω VSTB1=0V, IVREF=1mA

High-side SW ON resistance RHSW - 150 240 mΩ

LX2 NMOS ON resistance RLX2 - 300 480 mΩ

DIS2 discharge resistance RDIS2 - 100 160 Ω VSTB2=0V, IDIS2=-1mA

LX1 OCP threshold (Note 1) IOCP1 1.2 2.4 3.6 A

LX2 OCP threshold (Note 1) IOCP2 1.2 2.4 3.6 A

HS2L leak current ILX_HSW -1 0 1 µA

LX1 leak current ILK_LX1 -1 0 1 µA

LX2 leak current ILK_LX2 -1 0 1 µA

OVP

CH1 Over voltage protection OVP1 VDD -15.5

VDD -14.5

VDD -13.5

V Monitoring DIS1

CH2 Over voltage protection OVP2 19 20.5 22 V Monitoring VOUT2

TSD

TSD Detect Temperature (Note 1) TSD_DET 150 175 200 °C

TSD Hysteresis (Note 1) TSD_HYS - 25 - °C

(Note 1) These items are not production tested, guaranteed by design and evaluation.

10/32



BD81870EFV-M

Electrical Characteristics – continued (Unless otherwise noted, Ta=25°C, VDD=3.6V)

Parameter Symbol Limits

Unit Condition MIN TYP MAX

Control Block

Control voltage

Active VH VDD x0.7

- - V

Non-active VL - - VDD x0.3

V

STB pull down resistance RCTRL 560 800 1040 kΩ STB1, STB2

Circuit current

Standby current VDD ISTB - - 1 µA STB1=STB2=0V SEQON=HSWON=0V LX1=0V, HS2L=0V

Standby current range VDD ISTB_R - - 20 µA -40<Ta<105°C

Circuit current of operation VDD IDD - 500 700 µA STB1=STB2=3.6V NON1=-0.2V, INV2=1.2V

11/32



BD81870EFV-M

Typical Performance Curves (Unless otherwise noted, Ta=25°C, VDD=3.6V, VOUT1=-6.2V, VOUT2=6.2V)

Figure 4. Frequency vs. VDD

Figure 5. VREF Voltage vs. VDD

Figure 6. INV2 Voltage vs.VDD

Figure 7. Standby Current vs. VDD

0.97

0.98

0.99

1.00

1.01

1.02

1.03

2 3 4 5 6V

RE

F V

olta

ge

[V]

VDD [V]

-40°C 25°C

105°C

0.776

0.784

0.792

0.800

0.808

0.816

0.824

2 3 4 5 6

INV

2 V

olta

ge

[V]

VDD [V]

105°C 25°C

-40°C

1.8

1.9

2.0

2.1

2.2

2.3

2.4

2 3 4 5 6

Fre

qu

en

cy [M

Hz]

VDD [V]

25°C

105°C -40°C

0

5

10

15

20

25

30

0 1 2 3 4 5 6 7

Sta

nd

by C

urr

en

t [u

A]

VDD [V]

105°C

25°C -40°C

12/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M


Figure 8. VOUT1 STB ON Waveform (Load 100mA)

Figure 9. VOUT1 Efficiency vs. Output Current (VDD)

Figure 10. VOUT1 Output Accuracy vs. Output Current (VDD)

Figure 11. VOUT1 Output Accuracy vs. Output Current (Temp)

-3

-2

-1

0

1

2

3

1 10 100 1000

Ou

tpu

t Accu

racy [%

]

Output Current [mA]

-3

-2

-1

0

1

2

3

1 10 100 1000

Ou

tpu

t Accu

racy [%

]

Output Current [mA]

0

10

20

30

40

50

60

70

80

90

100

1 10 100 1000E

ffic

ien

cy [%

]

Output Current [mA]

STB1 (3V/div.)

LX1 VOUT1 (3V/div.)

I_VDD (500mA/div.)

2ms/div.

3.6V 5.5V

2.5V

2.5V 5.0V 3.6V

-40°C 25°C

105°C

13/32



BD81870EFV-M


Figure 12. VOUT1 Load Transient Response Rising

Figure 13. VOUT1 Load Transient Response Falling

Figure 14. VOUT1 Over Current Protection

Figure 15. VOUT1 Over Voltage Protection

50us/div. 50us/div.

VDD LX1

VOUT1 (3V/div.)

I_L (1A/div.)

5ms/div.

STB1 (3V/div.)

LX1 VOUT1 (5V/div.)

I_VDD (2A/div.)

5ms/div.

VDD (5V/div.)

VOUT1(AC) (200mV/div.)

IOUT (50mA/div.)

VDD (5V/div.)


IOUT (50mA/div.)

14/32



BD81870EFV-M


Figure 16. VOUT2 STB ON Waveform (Load 100mA)

Figure 17. VOUT2 Efficiency vs. Output Current (VDD)

Figure 18. VOUT2 Output Accuracy vs. Output Current (VDD)

Figure 19. VOUT2 Output Accuracy vs. Output Current (Temp)

STB2 (3V/div.)

VOUT2 LX2

(3V/div.)

I_VDD (500mA/div.)

2ms/div.

0

10

20

30

40

50

60

70

80

90

100

1 10 100 1000E

ffic

ien

cy [%

]

Output Current [mA]

-3

-2

-1

0

1

2

3

1 10 100 1000

Ou

tpu

t Accu

racy [%

]

Output Current [mA]

-3

-2

-1

0

1

2

3

1 10 100 1000

Ou

tpu

t Accu

racy [%

]

Output Current [mA]

3.6V 5.5V

2.5V

2.5V

5.0V 3.6V

105°C 25°C

-40°C

15/32



BD81870EFV-M


Figure 20. VOUT2 Load Transient Response Rising

Figure 21. VOUT2 Load Transient Response Falling

Figure 22. VOUT2 Over Current Protection

Figure 23. VOUT2 Over Voltage Protection

50us/div. 50us/div.

VOUT2 VDD LX2

(3V/div.)

I_L (500mA/div.)

5ms/div.

STB2 (3V/div.)

VOUT2 LX2

(3V/div.)

I_VDD (500mA/div.)

5ms/div.

VDD (5V/div.)


IOUT (50mA/div.)

VDD (5V/div.)


IOUT (50mA/div.)

16/32



BD81870EFV-M


Figure 24. STB ON Waveform (SEQON=H, no load)

Figure 25. STB OFF Waveform (SEQON=H, no load)

Figure 26. VDD ON Waveform (SEQON=H, no load)

Figure 27. VDD OFF Waveform (SEQON=H, no load)

STB1 (3V/div.)

VOUT2 (3V/div.)

VOUT1 (3V/div.)

I_VDD (500mA/div.)

2ms/div.

STB1 (3V/div.)

VOUT2 (3V/div.)

VOUT1 (3V/div.)

I_VDD (500mA/div.)

2ms/div.

VDD (3V/div.)

VOUT2 (3V/div.)

VOUT1 (3V/div.)

I_VDD (500mA/div.)

2ms/div.

VDD (3V/div.)

VOUT2 (3V/div.)

VOUT1 (3V/div.)

I_VDD (500mA/div.)

2ms/div.

17/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

Timing Chart 1 ON/OFF sequence with STB control is as follows. STB1, STB2 and VDD are controlled independently. When SEQON pin is L, inverted DC/DC and step-up DC/DC can be controlled independently. When STB1 pin is H, inverted DC/DC soft-start begins. When STB2 pin is H, step-up DC/DC soft-start begins. Step-up DC/DC soft-start can begin after 2msec (typ.) from high-side switch soft-start. High-side switch soft-start begins when STB2 pin is H and HSWON=L or when UVLO of VDD is released in condition where HSWON=H. In condition where HSWON=H, ON/OFF sequence is shown in red-dotted line below.

2.0ms 3.2ms

3.2ms

VDD

STB1

VOUT1

VDD

STB2

VOUT2

UVLO

UVLO UVLO

UVLO

Figure 28. VDD≠STB, SEQON = GND

When SEQON pin is H, inverted DC/DC and step-up DC/DC is controlled by internal sequence. When STB1 pin is H, inverted DC/DC soft-start begins, after step-up DC/DC soft-starts ends. When STB1 pin is L, step-up DC/DC is OFF, 2msec after inverted DC/DC is OFF, In condition where HSWON=H, ON/OFF sequence is shown in red-dotted line below.

2.0ms 3.9ms

VDD

STB1

VOUT2

3.2ms

VOUT1

2.0ms

UVLO UVLO

Step_up DC/DCOFF delay

3.2ms

Figure 29. VDD≠STB, SEQON = VDD

18/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

Timing Chart 2 ON/OFF sequence with UVLO control is as follows. STB1 or STB2 are short to VDD. When SEQON pin is L, inverted DC/DC and step-up DC/DC can be controlled independently. When UVLO is released in condition where STB1 = VDD, inverted DC/DC soft-start begins. When UVLO is released in condition where STB2 = VDD, step-up DC/DC soft-start begins. Step-up DC/DC soft-start can begin after 2msec (typ.) from high-side switch soft-start. High-side switch soft-start begins when UVLO of VDD is released.

2.0ms 3.2ms

3.2ms

VDD

STB1

VOUT1

VDD

STB2

VOUT2

UVLO

UVLO UVLO

UVLO

Figure 30. VDD=STB1=STB2, SEQON = GND

When SEQON pin is H, inverted DC/DC and step-up DC/DC is controlled by internal sequence. When UVLO is released in condition where STB1 = VDD, inverted DC/DC soft-start begins, after step-up DC/DC soft-starts ends. When UVLO is detected in condition where STB1 = VDD, inverted DC/DC and step-up DC/DC are OFF at the same timing.

2.0ms 3.9ms

VDD

STB1

VOUT2

3.2ms

VOUT1

UVLO UVLO

3.2ms

Figure 31. VDD=STB1=STB2, SEQON = VDD

19/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

Example Application (TOP VIEW)

BD81870

(HTSSOP-B20)

VDDP

VDDP

VDDP

HS2L

LX2

GNDP

DIS2

GNDA

LX1

DIS1

NON1

VREF

N.C.

HSWON

SEQON

STB1

STB2

VOUT2

VOUT1

VDDA

VDD

VDD

INV2

VOUT2

L2

L1

D2

D1

CO2

CINP

CINA

R2A

R2B

RC2

CC2

CREF

CO1

R1A

R1B

RC1

CC1JP1

JP2

Figure 32. Application Example

Application Circuit components list VDD 3.6V, VOUT1 -6.2V/200mA, VOUT2 6.2V/200mA

Parts name Value Company Parts Number

CINA 1uF/16V Murata GCM188R71C105KA64

CINP 10uF/16V Murata GCM31CR71C106KA64

L1 4.7uH/1.2A Yuden NRS4012T4R7MDGJV

D1 30V/1A ROHM RB550VAM-30TR

CO1 22uF/10V x2 series Yuden LMK316ABJ226KLHT

R1A 24kΩ, 100kΩ series ROHM MCR03

R1B 20kΩ ROHM MCR03

CC1 22pF/50V Murata GCM1885C1H220JA16

RC1 10kΩ ROHM MCR03

CREF 0.1uF/10V Yuden LMK105BJ104KVHF




R2A 270kΩ x2 parallel ROHM MCR03



RC2 5.1kΩ ROHM MCR03

20/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

VDD 3.6V, VOUT1 -9.0V/30mA, VOUT2 18V/30mA

Parts name Value Company Parts Number

CINA 1uF/16V Murata GCM188R71C105KA64

CINP 10uF/16V Murata GCM31CR71C106KA64




R1A 180kΩ ROHM MCR03




CREF 0.1uF/10V Yuden LMK105BJ104KVHF



CO2 22uF/16V x2 series Yuden EMK325BJ226KMHP

R2A 430kΩ x2 parallel ROHM MCR03




Usable Component Range

Parts name Limits

Unit Conditions MIN TYP MAX

CINA 0.6 (Note 1) 1 ― uF VDD=2.5V to 5.5V

CINP 6 (Note 1) 10 ― uF VDD=2.5V to 5.5V

CO1 (Note 2) 6.6 (Note 1) 11 (Note 3) uF VOUT1= -6.2V

CO1 (Note 2) 4.4 (Note 1) 11 (Note 3) uF VOUT1= -9V

CO2 (Note 2) 6.6 (Note 1) 11 (Note 3) uF VOUT2=6.2V

CO2 (Note 2) 4.4 (Note 1) 11 (Note 3) uF VOUT2=18V

L1 (Note 2) 2.2 4.7 10 uH ―

L2 (Note 2) 2.2 4.7 10 uH ―

R1 ― ― 250 kΩ R1 = R1A + R1B

R2 ― ― 250 kΩ R2 = R2A + R2B

(Note 1) Select capacitor more than MIN limits, considering temperature characteristic, DC bias characteristics and etc. (Note 2) Select the parts considering gain and phase characteristics. (Note 3) Select the parts considering in-rush current at soft-start timing.

21/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

Selecting Application Components

1. Output Inductor

A shielded inductor that satisfies the current rating (current value, Ipeak as shown in the drawing below) and has a low DCR (direct current resistance component) is recommended. Inductor values affect output ripple current greatly.

Ipeak = Vin - Vout

Vin × η×Iout +

12

×Vin × (-Vout)

L × f × (Vin - Vout) (inverted DC/DC)

Ipeak = Vout

Vin × η×Iout +

12

×Vin × (Vout - Vin)

L × f × Vout (step-up DC/DC)

η: Efficiency(<0.92), f: Switching frequency, L: inductance

The second terms of the equations above are ripple current of the inductor. (Note) Applying a current more than the current rating of the inductor brings the inductor into magnetic saturation, which may lead to lower efficiency or undesired output oscillation. Select an inductor with an adequate margin so that the peak current does not exceed the rated current of the inductor.

⊿IL

Figure 33. Ripple Current

2. Output capacitor

A ceramic capacitor with low ESR is recommended for output in order to reduce output ripple. There must be an adequate margin between the maximum rating and output voltage of the capacitor, taking the DC bias property into consideration. When ceramic capacitor is used, the output ripple voltage is obtained by the following equation.

ΔVPP = Ipeak × RESR ＋ IoutCout

×-Vout

Vin - Vout ×

1f (inverted DC/DC)

ΔVPP = Ipeak × RESR ＋ IoutCout

×Vout - Vin

Vout ×

1f (step-up DC/DC)

Setting must be performed so that output ripple is within the allowable ripple voltage.

22/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

3. Output voltage CH1

The reference voltage of CH1 is 1.0V and the internal reference voltage of the ERROR AMP is 0V. Output voltage should be obtained by following equation.

VOUT1 = - R1AR1B

× 1.0V

NON1

VREF

VOUT1

1.0V

R1B

R1A

Internal IC

ERROR AMP

Figure 34. CH1 setting of feedback resistance CH2

The internal reference voltage of the ERROR AMP is 0.8V. Output voltage should be obtained by following equation.

VOUT2 = R2A + R2B

R2B × 0.8V

VOUT2

INV2

R2A

R2B

Internal IC

ERROR AMP0.8V

Figure 35. CH2 setting of feedback resistance

23/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

Notice for application 1. Soft-start function of inverted DC/DC

Soft-start function of inverted DC/DC is due to the soft-start function of VREF, voltage reference for inverted channel. When inverted channel is OFF, VREF voltage is discharged by internal MOS (typ. 150Ω). When inverted channel is turned ON immediately after turning OFF, in case VREF voltage is not fully discharged, there will be no soft-start of inverted output and it may cause in-rush current at the time of start-up.

NON1

VREF

VOUT1

1.0V

R1B

R1A

Internal IC

ERROR AMP

Voltage Reference

SS1

_______STB1

VREF

VOUT1

STB1

Figure 36. CH1 soft-start function

2. Soft-start time of high-side switch Soft-start time of high-side switch is determined by input voltage and output voltage setting. Soft-start time THSWSS is determined by following equation.

THSWSS = 1.6msec × VDD - Vf

Vout

At high-side switch soft-start time, the current to output capacitor is determined by the following.

IHSWSS = Cout×Vout1.6msec

As example, IHSWSS = 53mA, when Cout=4.7uF and Vout=18V,

3. Capable output current Capable output current of inverted DC/DC and step-up DC/DC is determined by input voltage and output voltage setting, because Duty or operating range of FET is limited. The table below shows the capable output current in input and output voltage conditions. Table below shows the typical output current when an IC is off-latch. Not production tested.

-6 -9 6 9 12 15 182.5 220 123 2.5 252 150 763 350 243 3 406 252 177 97

3.5 480 343 3.5 584 364 268 200 1204 602 436 4 777 481 352 273 215

4.5 722 4.5 1000 608 440 340 2765 844 5 738 534 414 334

5.5 952 5.5 876 644 487 383

Iout [mA ]VOUT2[V]

VDD[V]

Iout[mA]VOUT1[V]

VDD[V]

Figure 37. Output Current Ability

24/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

4. Termination of not-in-use channel When only inverted DC/DC is used, terminals should be set as below.

BD81870

(HTSSOP-B20)

VDDP

VDDP

VDDP

HS2L

LX2

GNDP

DIS2

GNDA

LX1

DIS1

NON1

VREF

N.C.

HSWON

SEQON

STB1

STB2

VDDA

VDD

VDD

INV2

VOUT2

Figure 38. Disable CH2 boost DC/DC channel

When only step-up DC/DC is used, terminals should be set as below.

BD81870

(HTSSOP-B20)

VDDP

VDDP

VDDP

HS2L

LX2

GNDP

DIS2

GNDA

LX1

DIS1

NON1

VREF

N.C.

HSWON

SEQON

STB1

STB2

VOUT2

VDDA

VDD

VDD

INV2

VOUT2

Figure 39. Disable CH1 inverted DC/DC channel

25/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

Layout Guideline

DC/DC converter switching line must be as short and thick as possible to reduce line impedance. If the wiring is long, ringing

caused by switching would increase and this may exceed the absolute maximum voltage ratings. If the parts are located far

apart, consider inserting a snubber circuit.

The thermal Pad on the back side of IC has the great thermal conduction to the chip. So using the GND plain as broad and

wide as possible can help thermal dissipation. And a lot of thermal via for helping the spread of heat to the different layer is

also effective. When there is unused area on PCB, please arrange the copper foil plain of DC nodes, such as GND, VIN and

VOUT for helping heat dissipation of IC or circumference parts.

Figure 40. PCB Pattern Reference

26/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

I/O Equivalent Circuit

VDDA STB2, STB1 SEQON, HSWON

VREF NON1 DIS1

LX1, VDDP HS2L LX2

VOUT2 DIS2 INV2

VDDA

GNDA

VDDA

STB1,STB2

GNDA GNDA GNDA

VDDA

VREF

VDDA

GNDAGNDA

VDDA

NON1

GNDA

VDDA

DIS1

GNDA

VDDA

VDDP

LX1

GNDP

HS2L

VDDP

GNDP

LX2

GNDP GNDP

VOUT2

GNDA GNDP

DIS2

GNDP GNDP

VOUT2

INV2

GNDA

VDDA

VDDA

SEQONHSWON

GNDA GNDA

27/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

Operational Notes

1. Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply pins.

2. Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors.

3. Ground Voltage

Except for pins the output and the input of which were designed to go below ground, ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.

4. Ground Wiring Pattern

When using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.

5. Thermal Consideration

Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceeding the maximum junction temperature rating.

6. Recommended Operating Conditions

These conditions represent a range within which the expected characteristics of the IC can be approximately obtained. The electrical characteristics are guaranteed under the conditions of each parameter.

7. Inrush Current

When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of connections.

8. Operation Under Strong Electromagnetic Field

Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.

9. Testing on Application Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage.

28/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

Operational Notes – continued

10. Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few.

11. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power supply or ground line.

12. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided.

Figure 41. Example of monolithic IC structure

13. Ceramic Capacitor

When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others.

14. Area of Safe Operation (ASO)

Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within the Area of Safe Operation (ASO).

N NP

+ P

N NP

+

P Substrate

GND

NP

+

N NP

+N P

P Substrate

GND GND

Parasitic

Elements

Pin A

Pin A

Pin B Pin B

B C

E

Parasitic

Elements

GNDParasitic

Elements

CB

E

Transistor (NPN)Resistor

N Region

close-by

Parasitic

Elements

29/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

Operational Notes – continued

15. Thermal Shutdown Circuit(TSD)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat damage.

16. Over Current Protection Circuit (OCP)

This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should not be used in applications characterized by continuous operation or transitioning of the protection circuit.

30/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

Ordering Information

B D 8 1 8 7 0 E F V ME2

Parts number

Package EFV:HTSSOP-B20

Product Rank M: for Automotive Packaging specification E2: Embossed carrier tape

Marking Diagram

Parts Number Marking

1 PIN MARK

1pin Mark

LOT NumberD 8 1 8 7 0

31/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

Physical Dimension, Tape and Reel Information

Package Name HTSSOP-B20

32/32


www.rohm.com

TSZ22111 • 15 • 001

BD81870EFV-M

Revision History

Date Revision Changes

29.July.2016 001 New Release

25.May.2018 002 P.21 Change the comment in 1.Output Inductor of Selecting Application Components.

Notice-PAA-E Rev.003

© 2015 ROHM Co., Ltd. All rights reserved.

Notice

Precaution on using ROHM Products 1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment

(Note 1),

aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN USA EU CHINA

CLASSⅢ CLASSⅢ

CLASSⅡb CLASSⅢ

CLASSⅣ CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in

the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PAA-E Rev.003

© 2015 ROHM Co., Ltd. All rights reserved.

Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights 1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data.

2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software).

3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties.

DatasheetDatasheet

Notice – WE Rev.001© 2015 ROHM Co., Ltd. All rights reserved.

General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.

ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this document is current as of the issuing date and subject to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative.

3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information.

VOUT2 BD81870 Datasheet -...

Documents

Transcript of VOUT2 BD81870 Datasheet -...