Virtual prototyping for power diode and IGBT development...diode and IGBT development Maria...
Transcript of Virtual prototyping for power diode and IGBT development...diode and IGBT development Maria...
Virtual prototyping for power diode and IGBT development
Maria Cotorogea Peter Türkes Andreas Groove
30th Working Group Bipolar
Outline
Introduction
Virtual Prototyping Approach
Compact modelling for power devices
Assessment of Model Precision
Electro-thermal co-simulation in SPICE
1
2
3
4
5
2 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Summary and Outlook 6
Outline
Introduction
Virtual Prototyping Approach
Compact modelling of power devices
Assessment of Model Precision
Electro-thermal co-simulation in SPICE
1
2
3
4
5
3 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Summary and Outlook 6
Introduction
4 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
› IGBTs and power diodes are bipolar devices
› Losses are dominated by stored charges
› Development target: higher power density higher switching frequencies
› IGBT-modules:
• Chip development • Package development
› Virtual Prototyping Group in Munich
› Why virtual prototyping in IGBT-module development?
• Reduce development costs and time by reducing learning cycles
› Target: accurately predict switching behavior
› Strategy: rollout on technology and package projects
› Model requirements:
• physics based models for IGBTs and diodes
• knowledge of parasitic elements and couplings
• fast model implementation and simulation
Introduction
5 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Outcome of VP activities
Provide interfaces between different simulation levels (device simulation circuit simulation system simulation)
Evaluate and enhance today’s modeling precision of compact models to describe switching behavior of bipolar devices within SOA
Consider electrical parasitics due to package design
Assess current distribution in modules with several devices in parallel
Investigate effect of manufacturing process tolerances in FE and BE
Consider thermal couplings in modules and propose an electro-thermal co-simulation as full circuit-simulation approach
Not in focus
Device triggered oscillation mechanisms
Failure mechanisms
Device reliability
Outline
Introduction
Virtual Prototyping Approach
Compact modelling of power devices
Assessment of Model Precision
Electro-thermal co-simulation in SPICE
1
2
3
4
5
6 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Summary and Outlook 6
Virtual Prototyping Approach Virtual chip-module development flow
7 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Chip layout
POR Process simulation
Device model Device simulation
Device
compact
model
Virtual chip development
Virtual module development
CAD
layout
FEM Model
FEM Simulation
Parasitics
compact
model
Virtual
data sheet
Application
circuits
Module switching characteristics Design / Process
simulation
Circuit System-level
models
8 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Switching
behavior
• switching conditions
• power circuit & driver
• power devices & packages
Conside-
rations
• short time scale: high du/dt & di/dt
• large time scale: self-heating
Simulation
needs
• appropriate electro-thermal models for IGBTs and diodes
• electrical and thermal parasitics models
• modeling techniques accounting for 2D or 3D geometrical design
• tools capable of facilitating a rapid iterative virtual design process
inherent electrical & thermal
couplings
Virtual Prototyping Approach General Concept behind the Idea
Virtual Prototyping Approach
9 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
PAC
PDC
2D-TCAD
3D-FEM
Physics-based device
compact model
Electrical parasitics compact model
Thermal network as compact model
Circuit
simulation
Au
tom
ate
d m
od
el g
en
erati
on
Man
ual m
od
el
gen
erati
on
an
d c
ali
brati
on
Min
imum
loss o
f pre
cis
ion!
Outline
Introduction
Virtual Prototyping Approach
Compact modelling of power devices
Assessment of Model Precision
Electro-thermal co-simulation in SPICE
1
2
3
4
5
10 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Summary and Outlook 6
Compact modelling of power devices Description of charge dynamics in the drift region
n+ n- p+ n
SCR
Determined by implicit equation,
derived from Poisson-Equation
0
Charge dynamics in the base is described by the ambipolar diffusion equation (ADE):
Solution Methods for the local charge distribution:
Fourier Transformation
Kraus-Approximation using hyperbolic Functions
Finite Element Method (FEM)
Finite Difference Method (FDM)
Approximation as a pure 1D problem!
We need four boundary conditions 𝜕𝑝
𝜕𝑡= −
𝑝
𝜏+ 𝐷𝑎
𝜕2𝑝
𝜕𝑥2 𝑤𝑖𝑡ℎ 𝑛 ≈ 𝑝 → 𝑅𝐵𝑎𝑠𝑒 , 𝑄𝑏𝑎𝑠𝑒
𝐼𝑡𝑜𝑡 = 𝐼𝑝(0) 𝐼𝑡𝑜𝑡 = 𝐼𝑛(𝑑)
› Advantages of FDM over Kraus-Ansatz
– FDM needs less approximations
– Resistance modulation of small base-regions can be described
– Diode: no Fit-Parameter for ratio of plasma suspension points
Example: p-i-n diode
11 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Compact modelling of power devices Description of charge dynamics in the drift region
n+ n- p+ n
SCR
Determined by implicit equation,
derived from Poisson-Equation
0
Charge dynamics in the base is described by the ambipolar diffusion equation (ADE):
Solution Methods for the local charge distribution:
Fourier Transformation
Kraus-Approximation using hyperbolic Functions
Finite Element Method (FEM)
Finite Difference Method (FDM)
Approximation as a pure 1D problem!
We need four boundary conditions 𝜕𝑝
𝜕𝑡= −
𝑝
𝜏+ 𝐷𝑎
𝜕2𝑝
𝜕𝑥2 𝑤𝑖𝑡ℎ 𝑛 ≈ 𝑝 → 𝑅𝐵𝑎𝑠𝑒 , 𝑄𝑏𝑎𝑠𝑒
𝐼𝑡𝑜𝑡 = 𝐼𝑝(0) 𝐼𝑡𝑜𝑡 = 𝐼𝑛(𝑑)
› Disadvantages of FDM over Kraus-Ansatz
– FDM has more unknowns and thus equations
– The SPICE code is significantly more complex!
– Convergence: Choose the correct boundary conditions
Example: p-i-n diode
12 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
› Discretize base into equidistant points where the carrier concentration is calculated
› Time integration directly calculated during transient analysis in SPICE › Local integration for Qbase(t) and Rbase(t) discrete sums with SPICE subcircuit
› Note: Moving SCR boundary, thus ∆x is changing with time
› High Injection at both junctions (anode & cathode):
› First 4 and last 4 points are used in Lagrange polynomials for local gradients at both junctions (anode & cathode):
… … …
𝜕𝑝𝑖
𝜕𝑡= −
𝑝𝑖
𝜏+ 𝐷𝑎
𝑝𝑖−1 − 2𝑝𝑖 + 𝑝𝑖+1
∆𝑥2 Each point one equation
Numerical Stable Boundary Conditions (BC)
𝜕𝑝0
𝜕𝑥=
1
6∆𝑥−11𝑝0 + 18𝑝1 − 9𝑝2 + 2𝑝3 =-
𝜇𝑛
𝜇𝑛+𝜇𝑝
1
𝑞∙𝐴∙𝐷 𝐼𝑡𝑜𝑡
𝜕𝑝𝑛
𝜕𝑥=
1
6∆𝑥−2𝑝𝑛−3 + 9𝑝𝑛−2 − 18𝑝𝑛−1 + 11𝑝𝑛 =
𝜇𝑝
𝜇𝑛+𝜇𝑝
1
𝑞∙𝐴∙𝐷 𝐼𝑡𝑜𝑡
Compact modelling of power devices Description of charge dynamics in the drift region
13 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
U11dgl_randbedIin
p1p2
p8p9
pl pr
U8relem2
P1P2
P3P4
P5P6
P7P8
P9
Vp
U7diffusion1
23
U6diffusion1
23
U5diffusion1
23
U4diffusion1
23
U3diffusion1
23
U2diffusion1
23
U1diffusion1
23
U10diffusion1
23
U9diffusion1
23
H1
11K
R1V1
U2
ou
tin
ARB1
OU
T
in3
in2
in1
boundary-conditions
dynamic charge
and resistance
ADE Submodel
integrator 2
2
11 )2()(
x
xDpppD
dt
dp iiii
red @ time green @ time + t
Compact modelling of power devices Implementation of charge dynamics model in SPICE
14 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Plasma concentration in a diode during turn-off
Unique feature of a SIMetrix model
Compact modelling of power devices Implementation of charge dynamics model in SPICE
15 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Outline
Introduction
Virtual Prototyping Approach
Compact modelling for power devices
Assessment of Model Precision
Electro-thermal co-simulation in SPICE
1
2
3
4
5
16 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Summary and Outlook 6
17 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
› Calibration
– TCAD and compact chip models are calibrated on measurements of single chips mounted on DCBs
– Parasitics are extracted for the module and the test setup directly from the CAD layout (no C, R @ DC and L @ 100MHz)
– Parasitics of the driver are fitted from characterization measurements
› Precision assessment – DoE for dynamic characterization in test circuit varying Rg, VCC, ILoad, Tj and Ls
– Measurements and simulations for at least 24 switching conditions
– Mounting as single-chip and in module package
– Evaluation of IGBT turn on and off + diode reverse recovery
– For each switching conditions extraction of up to 68 switching parameters from simulated and measured curves
– Qualitative assessment: overlay of simulated and measured switching transients for different switching conditions
– Quantitative assessment: simulation error (deviation) of extracted parameters for single-chip and module mounting
Assessment of modelling precision Work flow
18 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Assessment of modelling precision Switching curves
Rg
Rg
Ic Ic
Vce Vce
TCAD
Models
(S-Device)
Compact
models
(SIMetrix)
Turn on Turn off
19 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
[W]
Assessment of modelling precision Extracted dynamic parameters
Outline
Introduction
Virtual Prototyping Approach
Compact modelling for power devices
Assessment of Model Precision
Electro-thermal co-simulation in SPICE
1
2
3
4
5
20 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Summary and Outlook 6
21 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Electro-thermal co-simulation in SPICE Motivation
› Currently used thermal models:
– Foster model (partial-fraction network, data sheet parameters)
– Cauer model (continued-fraction network, physically correct)
– Matlab model (direct combination of step responses from FEM analysis with power signal via convolution integral)
› Serious draw back: amount of RC elements when considering thermal couplings in complex modules
› Good to have:
– thermal model that can be directly integrated in circuit simulation
– Coupling with electrical model that considers loss distribution
22 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Electro-thermal co-simulation in SPICE Thermal model generation with MOR tool for ANSYS
› Generates reduced thermal model without calculation of a temperature field.
– MOR = Model Order Reduction (procedure)
– ROM = Reduced Order Model (result)
•3D-CAD
•material data
• relevant devices
•FEM network definition
•boundary conditions (convection etc.)
• load (power loss)
23 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Electro-thermal co-simulation in SPICE Thermal model generation with MOR tool for ANSYS
› Generates reduced thermal model without calculation of a temperature field.
– MOR = Model Order Reduction (procedure)
– ROM = Reduced Order Model (result)
•3D-CAD
•material data
• relevant devices
•FEM network definition
•boundary conditions (convection etc.)
• load (power loss)
62mm module
Foster model with 624 Rs & Cs:
Fitting time=15.6h
Working time=23.6h
Total time = 29.2h
ROM for 180 dimensions with 6840 elements:
Working time=2.0h
Total time = 2.1h
PrimePackTM3 module
Foster model with 9408 Rs & Cs:
Fitting time=235h
Working time=262h
Total time = 410h
ROM for 1000 dimensions with 146k elements:
Working time=3h
Total time = 12h
thermal network
Example:
Compact model of a PrimePackTM3 with 48 semiconductors
24 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Electro-thermal co-simulation in SPICE Electro-thermal simulations with ROM for PP3
› Electro-thermal model in SIMetrix results from merging the thermal ROM and the electrical compact model of the PP3 (semiconductor models were modified for power calculation and thermal handling)
Electro-thermal
network
Only electrical
network Output
Transient temperature and power loss
distribution in the module until thermal steady
state reached
Output Transient power loss distribution in the module
at fixed temperature
Period: 35µs
Convergence fail after 11 pulses!
Estimated analysis time for 10ms: 140.3h
Estimated analysis time for 100s: 160y
Period: 35µs
Convergence fail after 48 pulses!
Estimated analysis time for 10ms: 37.8h
Estimated analysis time for 100s: 43y!
Transient multi-pulse simulation
25 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Electro-thermal co-simulation in SPICE Approach
› Transient multi-pulse electro-thermal simulation: not viable because of analysis time and convergence stability
› Next approach: perform separated, but coupled iterative simulations with pure electrical and pure thermal model
simulate stationary temperature and power loss distribution in the module at thermal steady state in a DC/DC converter
simulate transient temperature and power loss distribution in the module during thermal ramp up with sinusoidal current load (emulates inverter operation)
26 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Electro-thermal co-simulation in SPICE Approach
P_IH
P_DH
P_DL
VD
25
vjDH11
25
vjIH11
25
vjDH8
25
vjIH8
25
vjDL8
25
vjIL8
25
vjIL4
25
vjDL4
25
vjDL3
25
vjIL3
25
vjIH4
25
vjDH3
25
vjDH4
25
vjDH5
25
vjDH6
25
vjIH6
25
vjIH5
25
vjIL1
Vge
IC
Vce
IH8IH7
IL8
DH8DH7
DL8
IL7
DL7
IH4IH3
IL4
DH4DH3
DL4
IL3
DL3
DL9
IL9
DL10
DH9 DH10
IL10
IH9 IH10{rgint}
R22
{rgint}
R23
{rgint}
R24
{rgint}
R25
{rgint}
R18
{rgint}
R19
{rgint}
R20
{rgint}
R21
{rgint}
R14
{rgint}
R15
{rgint}
R16
{rgint}
R17
{rgint}
R9
{rgint}
R8
{rgint}
R6
{rgint}
R4
FF1400R12IP4_RdcLac100MHz
U1
WechslerPlus
MinusHG2
HG1IGBT2_62W
IGBT2_61WIGBT2_52W
IGBT2_51WIGBT2_42W
IGBT2_41WIGBT2_32W
IGBT2_31WIGBT2_22W
IGBT2_21WIGBT2_12W
IGBT2_11WIGBT1_62W
IGBT1_61WIGBT1_52W
IGBT1_51WIGBT1_42W
IGBT1_41WIGBT1_32W
IGBT1_31WIGBT1_22W
IGBT1_21WIGBT1_12W
IGBT1_11WHE1
Diode2_62WDiode2_61W
Diode2_52WDiode2_51W
Diode2_42WDiode2_41W
Diode2_32WDiode2_31W
Diode2_22WDiode2_21W
Diode2_12WDiode2_11W
Diode1_62WDiode1_61W
Diode1_52WDiode1_51W
Diode1_42WDiode1_41W
Diode1_32WDiode1_31W
Diode1_22WDiode1_21W
Diode1_12WDiode1_11W
IGBT1_62PIGBT1_61P
IGBT1_52PIGBT1_51P
IGBT1_42PIGBT1_41P
IGBT1_32PIGBT1_31P
IGBT1_22PIGBT1_21P
IGBT1_12PIGBT1_11P
HC1Diode1_62P
Diode1_61PDiode1_52P
Diode1_51PDiode1_42P
Diode1_41PDiode1_32P
Diode1_31PDiode1_22P
Diode1_21PDiode1_12P
Diode1_11PIGBT2_62M
IGBT2_61MIGBT2_52M
IGBT2_51MIGBT2_42M
IGBT2_41MIGBT2_32M
IGBT2_31MIGBT2_22M
IGBT2_21MIGBT2_12M
IGBT2_11MHE2
Diode2_62MDiode2_61M
Diode2_52MDiode2_51M
Diode2_42MDiode2_41M
Diode2_32MDiode2_31M
Diode2_22MDiode2_21M
Diode2_12MDiode2_11M
G2_62G2_61
G2_52G2_51
G2_42G2_41
G2_32G2_31
G2_22G2_21
G2_12G2_11
G1_62G1_61
G1_52G1_51
G1_42G1_41
G1_32G1_31
G1_22G1_21
G1_12G1_11
IP2
HE1
HE2
ARB5
V(c)-V(e)
c
e
OUT
ARB4
V(g)-V(he)
g
he
OUT
1.4k
I1
IGBT1_62PSubstrat 6Diode2_62M
G2_61 G2_62
IGBT2_62W
IGBT2_61M IGBT2_62M
Diode2_62WDiode2_61W
IGBT2_61W
Diode2_61M
Diode1_62P
IGBT1_62W
Diode1_62WDiode1_61W
IGBT1_61P
IGBT1_61W
G1_61 G1_62
Diode1_61PDiode1_51P
G1_52G1_51
IGBT1_51W
IGBT1_51P
Diode1_51W Diode1_52W
IGBT1_52W
Diode1_52P
Diode2_51M
IGBT2_51W
Diode2_51W Diode2_52W
IGBT2_52MIGBT2_51M
IGBT2_52W
G2_52G2_51
Diode2_52M
Substrat 5IGBT1_52P
IGBT1_42P
Substrat 4
Diode2_42M
G2_41 G2_42
IGBT2_42W
IGBT2_41M IGBT2_42M
Diode2_42WDiode2_41W
IGBT2_41W
Diode2_41M
Diode1_42P
IGBT1_42W
Diode1_42WDiode1_41W
IGBT1_41P
IGBT1_41W
G1_41 G1_42
Diode1_41P
IGBT1_22P
IGBT2_61W
IGBT2_41W
IGBT2_21W
IGBT1_61W
IGBT1_41W
IGBT2_62W
IGBT2_42W
IGBT2_22W
IGBT1_62W
IGBT1_42W
Diode1_32P
Diode1_52P
IGBT1_31P
IGBT1_51P
Diode1_31W
Diode1_51W
Diode2_31W
Diode2_51W
IGBT2_52M
IGBT2_32M
Diode2_51M
Diode2_31M
G2_51
G2_31
G1_51
G1_31
G1_42
G1_62
G2_42
Diode2_32M
IGBT2_31M
IGBT2_51M
Diode2_62W
Diode2_42W
Diode1_62W
Diode1_42W
IGBT1_62P
IGBT1_42P
HC1
Diode1_51P
Diode1_31P
IGBT1_22W
IGBT1_21P
Diode2_21W Diode2_22W
IGBT1_22P
IGBT2_21M
Diode2_22M
G2_21
G1_22
Substrat 2
Diode2_22M
G2_21 G2_22
IGBT2_22W
IGBT2_21M IGBT2_22M
Diode2_22WDiode2_21W
IGBT2_21W
Diode2_21M
Diode1_22P
IGBT1_22W
Diode1_22WDiode1_21W
IGBT1_21P
IGBT1_21W
G1_21 G1_22
Diode1_21P
HG1
IGBT2_11M
Diode2_12M
Diode2_11W
Diode1_12W
IGBT1_11W
IGBT1_11P
Lastspule
Wechsler
170n
L2
1.0
R2
HE2
Pulse(-15 15 10u 110n 110n 387u 669u)
V2
HG2
1.3
R3
HG2
G2_12
G1_12
WechslerPlus
600
V1
Diode1_11P
G1_12G1_11
IGBT1_11W
IGBT1_12P
10
R7
HG1
-15
V3
HE1
Plus
Aufbau mit Quelle
R-L-Ersatzschaltung Aufbau 36n
L1
37.5m
R1
Ansteuerung
Minus
500u
R5
100n
L5
IGBT1_11P
Diode1_11W Diode1_12W
IGBT1_12W
Diode1_12P
Diode2_11M
IGBT2_11W
Diode2_11W Diode2_12W
IGBT2_12MIGBT2_11M
IGBT2_12W
G2_12G2_11
Diode2_12M
Substrat 1
Minus
G1_11
G2_11
HE2
Plus
IGBT1_12P
IGBT1_12W
Diode1_11P
Diode1_11W
Diode1_12P
Diode2_12W
Diode2_11M
IGBT2_12M
HE1
G1_21
G2_22
Diode2_21M
Diode1_21P
Diode1_22W
IGBT1_21W
Diode1_21W
Diode1_22P
IGBT2_22M
Diode1_41P
Diode1_61P
IGBT1_32P
IGBT1_52P
Diode1_32W
Diode1_52W
Diode2_32W
Diode2_52W
IGBT2_61M
IGBT2_41M
Diode2_62M
Diode2_52M
Diode2_42M
G2_62
G2_52
G2_32
G1_52
G1_32
G1_41
G1_61
G2_41
G2_61
Diode2_41M
Diode2_61M
IGBT2_42M
IGBT2_62M
Diode2_61W
Diode2_41W
Diode1_61W
Diode1_41W
IGBT1_61P
IGBT1_41P
Diode1_62P
Diode1_42P
IGBT1_32W
IGBT1_52W
IGBT2_12W
IGBT2_32W
IGBT2_52W
IGBT1_31W
IGBT1_51W
IGBT2_11W
IGBT2_31W
IGBT2_51W
Diode1_31P
G1_32G1_31
IGBT1_31W
IGBT1_31P
Diode1_31W Diode1_32W
IGBT1_32W
Diode1_32P
Diode2_31M
IGBT2_31W
Diode2_31W Diode2_32W
IGBT2_32MIGBT2_31M
IGBT2_32W
G2_32G2_31
Diode2_32M
Substrat 3IGBT1_32P
I(in)
ARB1
I(in)
OUT
VD
ARB3
V(A)-V(K)
OUT
k
a
I(in)
ARB2
I(in)
OUTID
IC
Vge
Vce
HC1
HE1
IP1
IP2
IP1
{rgint}
R13
{rgint}
R12
{rgint}
R11
{rgint}
R10
{rgint}
R29
{rgint}
R28
{rgint}
R27
{rgint}
R26
DL1
IL1
DL2
DH1 DH2
IL2
IH1 IH2
IH6IH5
IL6
DH6DH5
DL6
IL5
DL5
DL11
IL11
DL12
DH11 DH12
IL12
IH11 IH12
C1
1n
25
vjIL2
25
vjDL1
25
vjDL2
25
vjIH1
25
vjIH2
25
vjDH2
25
vjDH1
25
vjDL5
25
vjIL5
25
vjDL6
25
vjIL6
25
vjIL10
25
vjDL10
25
vjIL9
25
vjDL9
25
vjIH9
25
vjIH10
25
vjDH10
25
vjDH9
25
vjIH3
25
vjIL7
25
vjDL7
25
vjIH7
25
vjDH7
25
vjDL11
25
vjIL11
25
vjDL12
25
vjIL12
25
vjIH12
25
vjDH12
ID
P_IL
FF1400R12IP4_Therm_N100U2
vjIL1 vjIL2vjIL3 vjIL4vjIL5 vjIL6vjIL7 vjIL8vjIL9 vjIL10vjIL11 vjIL12vjDL1 vjDL2vjDL3 vjDL4vjDL5 vjDL6vjDL7 vjDL8vjDL9 vjDL10vjDL11 vjDL12vjIH1 vjIH2vjIH3 vjIH4vjIH5 vjIH6vjIH7 vjIH8vjIH9 vjIH10vjIH11 vjIH12vjDH1 vjDH2vjDH3 vjDH4vjDH5 vjDH6vjDH7 vjDH8vjDH9 vjDH10vjDH11 vjDH12
gnd
25Vtambient
244.141734692882
PIL9
243.510914717039
PIL11
0.0457366750958548
PDL1
0.0583527217828008
PDL3
246.560629722351
PIL7253.092342728174
PIL5249.779500651404
PIL3253.379714324295
PIL1
0.0639353704677629
PDL5
0.0619137081089526
PDL7
0.0573678645351192
PDL9
0.0442727672843596
PDL11
0.0207127483256967
PIH70.0204301527359044
PIH50.0202047956111984
PIH30.0198797591381681
PIH1
0.0212157919284937
PIH9
0.0221505077710705
PIH11
110.070345323269
PDH1
111.551162487456
PDH3
109.482827935673
PDH11114.578259462689
PDH9114.331689203209
PDH7113.406335506563
PDH5
vjDH7
vjIH9
vjIH5
vjDL9
vjDL5
vjIL9
vjIL5
vjDL3
vjIL1
vjDL1
vjDH1
vjIH1
vjDH3
vjIL3
vjIH3
vjDH5
vjIL7
vjIL11
vjDL7
vjDL11
vjIH7
vjIH11
vjDH9vjDH11 vjDH12
vjDH10
vjIH12
vjIH8
vjDL12
vjDL8
vjIL12
vjIL8
vjDH6
vjIH4
vjIL4
vjDH4
vjIH2
vjDH2
vjDL2
vjIL2
vjDL4
vjIL6
vjIL10
vjDL6
vjDL10
vjIH6
vjIH10
vjDH8
108.866242343757
PDH2
110.400396125383
PDH4
111.946280909337
PDH6
112.786412518265
PDH8
112.929778003241
PDH10107.488108345139
PDH120.0198589220380567
PIH20.0201882557578181
PIH4
0.0204086514234834
PIH6
0.0206984417949577
PIH8
0.0212303454981039
PIH10
0.0222155205472372
PIH12
0.0500369742007769
PDL20.0617732620971844
PDL40.0661033337570826
PDL60.0634768963893531
PDL8
246.824096071425
PIL2
244.834384910374
PIL4
247.936990677803
PIL6
242.569039417704
PIL8
0.0578156757479723
PDL100.0411749905897605
PDL12239.887128801927
PIL10240.406160611496
PIL12
script linkage
Tota
l lo
ss p
er
chip
Mean te
mpera
ture
per c
hip
› Transient multi-pulse electro-thermal simulation: not viable because of analysis time and convergence stability
› Next approach: perform separated, but coupled iterative simulations with pure electrical and pure thermal model
Electrical model: transient double-
pulse simulation at given f and D
with updated T
Thermal model: DCOP
with updated losses
simulate stationary temperature and power loss distribution in the module at thermal steady state in a DC/DC converter
simulate transient temperature and power loss distribution in the module during thermal ramp up with sinusoidal current load (emulates inverter operation)
27 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Electro-thermal co-simulation in SPICE Example: PrimePackTM3
Stationary pseudo electro-thermal simulation
› Circuit: buck converter, low-side IGBT is switched
› Design: converter layout calculation for Tjmax=150°C
› Tinitial = 25°C
› Convergence criterion < 0.05°C
› 10 iteration needed
› Total analysis time: 3.3h
› Result: mean temperature of each chip in good agreement with full FEM simulation
High-side diode (DH)
Low-side IGBT (IL)
28 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Electro-thermal co-simulation in SPICE Approach
P_IH
P_DH
P_DL
VD
25
vjDH11
25
vjIH11
25
vjDH8
25
vjIH8
25
vjDL8
25
vjIL8
25
vjIL4
25
vjDL4
25
vjDL3
25
vjIL3
25
vjIH4
25
vjDH3
25
vjDH4
25
vjDH5
25
vjDH6
25
vjIH6
25
vjIH5
25
vjIL1
Vge
IC
Vce
IH8IH7
IL8
DH8DH7
DL8
IL7
DL7
IH4IH3
IL4
DH4DH3
DL4
IL3
DL3
DL9
IL9
DL10
DH9 DH10
IL10
IH9 IH10{rgint}
R22
{rgint}
R23
{rgint}
R24
{rgint}
R25
{rgint}
R18
{rgint}
R19
{rgint}
R20
{rgint}
R21
{rgint}
R14
{rgint}
R15
{rgint}
R16
{rgint}
R17
{rgint}
R9
{rgint}
R8
{rgint}
R6
{rgint}
R4
FF1400R12IP4_RdcLac100MHz
U1
WechslerPlus
MinusHG2
HG1IGBT2_62W
IGBT2_61WIGBT2_52W
IGBT2_51WIGBT2_42W
IGBT2_41WIGBT2_32W
IGBT2_31WIGBT2_22W
IGBT2_21WIGBT2_12W
IGBT2_11WIGBT1_62W
IGBT1_61WIGBT1_52W
IGBT1_51WIGBT1_42W
IGBT1_41WIGBT1_32W
IGBT1_31WIGBT1_22W
IGBT1_21WIGBT1_12W
IGBT1_11WHE1
Diode2_62WDiode2_61W
Diode2_52WDiode2_51W
Diode2_42WDiode2_41W
Diode2_32WDiode2_31W
Diode2_22WDiode2_21W
Diode2_12WDiode2_11W
Diode1_62WDiode1_61W
Diode1_52WDiode1_51W
Diode1_42WDiode1_41W
Diode1_32WDiode1_31W
Diode1_22WDiode1_21W
Diode1_12WDiode1_11W
IGBT1_62PIGBT1_61P
IGBT1_52PIGBT1_51P
IGBT1_42PIGBT1_41P
IGBT1_32PIGBT1_31P
IGBT1_22PIGBT1_21P
IGBT1_12PIGBT1_11P
HC1Diode1_62P
Diode1_61PDiode1_52P
Diode1_51PDiode1_42P
Diode1_41PDiode1_32P
Diode1_31PDiode1_22P
Diode1_21PDiode1_12P
Diode1_11PIGBT2_62M
IGBT2_61MIGBT2_52M
IGBT2_51MIGBT2_42M
IGBT2_41MIGBT2_32M
IGBT2_31MIGBT2_22M
IGBT2_21MIGBT2_12M
IGBT2_11MHE2
Diode2_62MDiode2_61M
Diode2_52MDiode2_51M
Diode2_42MDiode2_41M
Diode2_32MDiode2_31M
Diode2_22MDiode2_21M
Diode2_12MDiode2_11M
G2_62G2_61
G2_52G2_51
G2_42G2_41
G2_32G2_31
G2_22G2_21
G2_12G2_11
G1_62G1_61
G1_52G1_51
G1_42G1_41
G1_32G1_31
G1_22G1_21
G1_12G1_11
IP2
HE1
HE2
ARB5
V(c)-V(e)
c
e
OUT
ARB4
V(g)-V(he)
g
he
OUT
1.4k
I1
IGBT1_62PSubstrat 6Diode2_62M
G2_61 G2_62
IGBT2_62W
IGBT2_61M IGBT2_62M
Diode2_62WDiode2_61W
IGBT2_61W
Diode2_61M
Diode1_62P
IGBT1_62W
Diode1_62WDiode1_61W
IGBT1_61P
IGBT1_61W
G1_61 G1_62
Diode1_61PDiode1_51P
G1_52G1_51
IGBT1_51W
IGBT1_51P
Diode1_51W Diode1_52W
IGBT1_52W
Diode1_52P
Diode2_51M
IGBT2_51W
Diode2_51W Diode2_52W
IGBT2_52MIGBT2_51M
IGBT2_52W
G2_52G2_51
Diode2_52M
Substrat 5IGBT1_52P
IGBT1_42P
Substrat 4
Diode2_42M
G2_41 G2_42
IGBT2_42W
IGBT2_41M IGBT2_42M
Diode2_42WDiode2_41W
IGBT2_41W
Diode2_41M
Diode1_42P
IGBT1_42W
Diode1_42WDiode1_41W
IGBT1_41P
IGBT1_41W
G1_41 G1_42
Diode1_41P
IGBT1_22P
IGBT2_61W
IGBT2_41W
IGBT2_21W
IGBT1_61W
IGBT1_41W
IGBT2_62W
IGBT2_42W
IGBT2_22W
IGBT1_62W
IGBT1_42W
Diode1_32P
Diode1_52P
IGBT1_31P
IGBT1_51P
Diode1_31W
Diode1_51W
Diode2_31W
Diode2_51W
IGBT2_52M
IGBT2_32M
Diode2_51M
Diode2_31M
G2_51
G2_31
G1_51
G1_31
G1_42
G1_62
G2_42
Diode2_32M
IGBT2_31M
IGBT2_51M
Diode2_62W
Diode2_42W
Diode1_62W
Diode1_42W
IGBT1_62P
IGBT1_42P
HC1
Diode1_51P
Diode1_31P
IGBT1_22W
IGBT1_21P
Diode2_21W Diode2_22W
IGBT1_22P
IGBT2_21M
Diode2_22M
G2_21
G1_22
Substrat 2
Diode2_22M
G2_21 G2_22
IGBT2_22W
IGBT2_21M IGBT2_22M
Diode2_22WDiode2_21W
IGBT2_21W
Diode2_21M
Diode1_22P
IGBT1_22W
Diode1_22WDiode1_21W
IGBT1_21P
IGBT1_21W
G1_21 G1_22
Diode1_21P
HG1
IGBT2_11M
Diode2_12M
Diode2_11W
Diode1_12W
IGBT1_11W
IGBT1_11P
Lastspule
Wechsler
170n
L2
1.0
R2
HE2
Pulse(-15 15 10u 110n 110n 387u 669u)
V2
HG2
1.3
R3
HG2
G2_12
G1_12
WechslerPlus
600
V1
Diode1_11P
G1_12G1_11
IGBT1_11W
IGBT1_12P
10
R7
HG1
-15
V3
HE1
Plus
Aufbau mit Quelle
R-L-Ersatzschaltung Aufbau 36n
L1
37.5m
R1
Ansteuerung
Minus
500u
R5
100n
L5
IGBT1_11P
Diode1_11W Diode1_12W
IGBT1_12W
Diode1_12P
Diode2_11M
IGBT2_11W
Diode2_11W Diode2_12W
IGBT2_12MIGBT2_11M
IGBT2_12W
G2_12G2_11
Diode2_12M
Substrat 1
Minus
G1_11
G2_11
HE2
Plus
IGBT1_12P
IGBT1_12W
Diode1_11P
Diode1_11W
Diode1_12P
Diode2_12W
Diode2_11M
IGBT2_12M
HE1
G1_21
G2_22
Diode2_21M
Diode1_21P
Diode1_22W
IGBT1_21W
Diode1_21W
Diode1_22P
IGBT2_22M
Diode1_41P
Diode1_61P
IGBT1_32P
IGBT1_52P
Diode1_32W
Diode1_52W
Diode2_32W
Diode2_52W
IGBT2_61M
IGBT2_41M
Diode2_62M
Diode2_52M
Diode2_42M
G2_62
G2_52
G2_32
G1_52
G1_32
G1_41
G1_61
G2_41
G2_61
Diode2_41M
Diode2_61M
IGBT2_42M
IGBT2_62M
Diode2_61W
Diode2_41W
Diode1_61W
Diode1_41W
IGBT1_61P
IGBT1_41P
Diode1_62P
Diode1_42P
IGBT1_32W
IGBT1_52W
IGBT2_12W
IGBT2_32W
IGBT2_52W
IGBT1_31W
IGBT1_51W
IGBT2_11W
IGBT2_31W
IGBT2_51W
Diode1_31P
G1_32G1_31
IGBT1_31W
IGBT1_31P
Diode1_31W Diode1_32W
IGBT1_32W
Diode1_32P
Diode2_31M
IGBT2_31W
Diode2_31W Diode2_32W
IGBT2_32MIGBT2_31M
IGBT2_32W
G2_32G2_31
Diode2_32M
Substrat 3IGBT1_32P
I(in)
ARB1
I(in)
OUT
VD
ARB3
V(A)-V(K)
OUT
k
a
I(in)
ARB2
I(in)
OUTID
IC
Vge
Vce
HC1
HE1
IP1
IP2
IP1
{rgint}
R13
{rgint}
R12
{rgint}
R11
{rgint}
R10
{rgint}
R29
{rgint}
R28
{rgint}
R27
{rgint}
R26
DL1
IL1
DL2
DH1 DH2
IL2
IH1 IH2
IH6IH5
IL6
DH6DH5
DL6
IL5
DL5
DL11
IL11
DL12
DH11 DH12
IL12
IH11 IH12
C1
1n
25
vjIL2
25
vjDL1
25
vjDL2
25
vjIH1
25
vjIH2
25
vjDH2
25
vjDH1
25
vjDL5
25
vjIL5
25
vjDL6
25
vjIL6
25
vjIL10
25
vjDL10
25
vjIL9
25
vjDL9
25
vjIH9
25
vjIH10
25
vjDH10
25
vjDH9
25
vjIH3
25
vjIL7
25
vjDL7
25
vjIH7
25
vjDH7
25
vjDL11
25
vjIL11
25
vjDL12
25
vjIL12
25
vjIH12
25
vjDH12
ID
P_IL
FF1400R12IP4_Therm_N100U2
vjIL1 vjIL2vjIL3 vjIL4vjIL5 vjIL6vjIL7 vjIL8vjIL9 vjIL10vjIL11 vjIL12vjDL1 vjDL2vjDL3 vjDL4vjDL5 vjDL6vjDL7 vjDL8vjDL9 vjDL10vjDL11 vjDL12vjIH1 vjIH2vjIH3 vjIH4vjIH5 vjIH6vjIH7 vjIH8vjIH9 vjIH10vjIH11 vjIH12vjDH1 vjDH2vjDH3 vjDH4vjDH5 vjDH6vjDH7 vjDH8vjDH9 vjDH10vjDH11 vjDH12
gnd
25Vtambient
244.141734692882
PIL9
243.510914717039
PIL11
0.0457366750958548
PDL1
0.0583527217828008
PDL3
246.560629722351
PIL7253.092342728174
PIL5249.779500651404
PIL3253.379714324295
PIL1
0.0639353704677629
PDL5
0.0619137081089526
PDL7
0.0573678645351192
PDL9
0.0442727672843596
PDL11
0.0207127483256967
PIH70.0204301527359044
PIH50.0202047956111984
PIH30.0198797591381681
PIH1
0.0212157919284937
PIH9
0.0221505077710705
PIH11
110.070345323269
PDH1
111.551162487456
PDH3
109.482827935673
PDH11114.578259462689
PDH9114.331689203209
PDH7113.406335506563
PDH5
vjDH7
vjIH9
vjIH5
vjDL9
vjDL5
vjIL9
vjIL5
vjDL3
vjIL1
vjDL1
vjDH1
vjIH1
vjDH3
vjIL3
vjIH3
vjDH5
vjIL7
vjIL11
vjDL7
vjDL11
vjIH7
vjIH11
vjDH9vjDH11 vjDH12
vjDH10
vjIH12
vjIH8
vjDL12
vjDL8
vjIL12
vjIL8
vjDH6
vjIH4
vjIL4
vjDH4
vjIH2
vjDH2
vjDL2
vjIL2
vjDL4
vjIL6
vjIL10
vjDL6
vjDL10
vjIH6
vjIH10
vjDH8
108.866242343757
PDH2
110.400396125383
PDH4
111.946280909337
PDH6
112.786412518265
PDH8
112.929778003241
PDH10107.488108345139
PDH120.0198589220380567
PIH20.0201882557578181
PIH4
0.0204086514234834
PIH6
0.0206984417949577
PIH8
0.0212303454981039
PIH10
0.0222155205472372
PIH12
0.0500369742007769
PDL20.0617732620971844
PDL40.0661033337570826
PDL60.0634768963893531
PDL8
246.824096071425
PIL2
244.834384910374
PIL4
247.936990677803
PIL6
242.569039417704
PIL8
0.0578156757479723
PDL100.0411749905897605
PDL12239.887128801927
PIL10240.406160611496
PIL12
script linkage
Tota
l lo
ss p
er
chip
Mean te
mpera
ture
per c
hip
› Transient multi-pulse electro-thermal simulation: not viable because of analysis time and convergence stability
› Next approach: perform separated, but coupled iterative simulations with pure electrical and pure thermal model
Electrical model: 1 double-pulse
simulation at given fsw and D
with updated T and Iload
Thermal model: quasi-continuous
transient simulation with updated losses
simulate stationary temperature and power loss distribution in the module at thermal steady state in a DC/DC converter
simulate transient temperature and power loss distribution in the module during thermal ramp up with sinusoidal current load (emulates inverter operation)
every
32 s
witchin
g p
eriods e
very 3
2 sw
itchin
g perio
ds
29 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Electro-thermal co-simulation in SPICE Example: PrimePackTM3
Results for transient pseudo electro-thermal simulation
› Switching: high-side IGBT, D=0.5, fsw=1500Hz › Load: sinusoidal current source, f=1Hz, Imax=1240A › Tinitial = Tambient = 25°C › Dt for thermal model update: 21.408ms › Simulated time range: 9,6336s › Total analysis time: 77h
TIGBT
TDiode
Mean T in IGBTs and diodes Chip-specific T in high-side IGBT
Low-side diode (DH)
High-side IGBT (IL)
Outline
Introduction
Virtual Prototyping Approach
Compact modelling for power devices
Assessment of Model Precision
Electro-thermal co-simulation in SPICE
1
2
3
4
5
30 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Summary and Outlook 6
Summary
31 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
› Virtual prototyping flow for device and package development
› Detailed evaluation of simulation precision
› Current distribution in modules for design optimization
› Investigation of impact of main FE and BE tolerances
› Simulation-based system-level models for thermal converter design
› Enhanced IGBT and diode compact models
› Electro-thermal co-simulation at circuit level
Outlook
32 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
Automated generation of
compact chip models
Establish MOR technique
to predict temp. distribution
Compact chip models:
Equivalent circuits Verilog-A
Establish automated
calibration routine
Extraction of compact chip
models from TCAD flow
Extend VP to discrete IGBTs
in evaluation boards
Vision
33 2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved.
2017-11-09 Copyright © Infineon Technologies AG 2015. All rights reserved. 34