IGBT H15R1203
Transcript of IGBT H15R1203
1
IHY15N120R3IH-series
Rev. 2.1 2009-11-25
Reverse conducting IGBT with monolithic body diode
Features:• Powerful monolithic body diode with low forward voltage designed for soft commutation only• TrenchStop® technology offering: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coefficient in VCEsat• Low EMI• New TO-247HC package offers increased air & creepage distances compared to TO247 package• Qualified according to JEDEC J-STD-020 and JESD-022 for target applications• Pb-free lead plating; RoHS compliant• Halogen free (according to IEC 61249-2-21)• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
Applications:• Inductive cooking
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TypeTypeTypeType VVVV†Š†Š†Š†Š IIII†††† VVVV†ŠÙÈÚ, †ŠÙÈÚ, †ŠÙÈÚ, †ŠÙÈÚ, TTTTÝÎ=25°CÝÎ=25°CÝÎ=25°CÝÎ=25°C TTTTÝÎÑÈàÝÎÑÈàÝÎÑÈàÝÎÑÈà MarkingMarkingMarkingMarking PackagePackagePackagePackage
IHY15N120R3 1200V 15A 1.48V 175°C H15R1203 PG-TO247HC-3
Maximum ratingsParameter Symbol Value UnitCollector-emitter voltage V†Š 1200 V
DC collector current, limited by TÝÎÑÈàT† = 25°CT† = 100°C
I† 30.015.0
A
Pulsed collector current, tÔ limited by TÝÎÑÈà I†ÔÛÐÙ 45.0 A
Turn off safe operating area V†Š ù 1200V, TÝÎ ù 175°C - 45.0 A
Diode forward current, limited by TÝÎÑÈàT† = 25°CT† = 100°C
IŒ 30.015.0
A
Diode pulsed current, tÔ limited by TÝÎÑÈà IŒÔÛÐÙ 45.0 A
Gate-emitter voltageTransient Gate-emitter voltage (tÔ = 10µs, D < 0.010)
V•Š ±20±25
V
Power dissipation T† = 25°CPower dissipation T† = 100°C PÚÓÚ 254.0
127.0 W
Operating junction temperature TÝÎ -40...+175 °C
Storage temperature TÙÚÃ -55...+175 °C
Soldering temperature,for 10 s (according to JEDEC J-STA-020A) 260 °C
Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm
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IHY15N120R3IH-series
Rev. 2.1 2009-11-25
Thermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,junction - case RÚÌñÎ-Êò 0.59 K/W
Diode thermal resistance,junction - case RÚÌñÎ-Êò 0.59 K/W
Thermal resistancejunction - ambient RÚÌñÎ-Èò 55 K/W
Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at TTTTÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Static CharacteristicCollector-emitter breakdown voltage Vñ…çò†Š» V•Š = 0V, I† = 0.50mA 1200 - - V
Collector-emitter saturation voltage V†ŠÙÈÚ
V•Š = 15.0V, I† = 15.0ATÝÎ = 25°CTÝÎ = 125°CTÝÎ = 175°C
---
1.481.701.80
1.70--
V
Diode forward voltage VŒ
V•Š = 0V, IŒ = 15.0ATÝÎ = 25°CTÝÎ = 125°CTÝÎ = 175°C
---
1.551.701.80
1.75- V
Gate-emitter threshold voltage V•ŠñÚÌò I† = 0.40mA, V†Š = V•Š 5.1 5.8 6.4 V
Zero gate voltage collector current I†Š»V†Š = 1200V, V•Š = 0VTÝÎ = 25°CTÝÎ = 175°C
--
--
100.02500.0
µA
Gate-emitter leakage current I•Š» V†Š = 0V, V•Š = 20V - - 100 nA
Transconductance gËÙ V†Š = 20V, I† = 15.0A - 13.9 - S
Integrated gate resistor r• none Â
Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at TTTTÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Dynamic CharacteristicInput capacitance CÍþÙ - 1165 -
Output capacitance CÓþÙ - 40 -
Reverse transfer capacitance CØþÙ - 32 -
V†Š = 25V, V•Š = 0V, f = 1MHz pF
Gate charge Q• V†† = 960V, I† = 15.0A, V•Š = 15V - 165.0 - nC
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IHY15N120R3IH-series
Rev. 2.1 2009-11-25
Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at TTTTÝÎ = 25°CÝÎ = 25°CÝÎ = 25°CÝÎ = 25°C
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBT CharacteristicTurn-off delay time tÁñÓËËò - 300 - ns
Fall time tË - 46 - ns
Turn-off energy EÓËË - 0.70 - mJ
TÝÎ = 25°C,V†† = 600V, I† = 15.0A,V•Š = 0.0/15.0V,r• = 14.6Â, Lÿ = 180nH,Cÿ = 39pFLÿ, Cÿ from Fig. EEnergy losses include “tail” anddiode reverse recovery.
Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at TTTTÝÎ = 175°CÝÎ = 175°CÝÎ = 175°CÝÎ = 175°C
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBT CharacteristicTurn-off delay time tÁñÓËËò - 370 - ns
Fall time tË - 90 - ns
Turn-off energy EÓËË - 1.25 - mJ
TÝÎ = 175°C,V†† = 600V, I† = 15.0A,V•Š = 0.0/15.0V,r• = 14.6Â, Lÿ = 180nH,Cÿ = 39pFLÿ, Cÿ from Fig. EEnergy losses include “tail” anddiode reverse recovery.
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IHY15N120R3IH-series
Rev. 2.1 2009-11-25
Figure 1.Figure 1.Figure 1.Figure 1. Collector current as a function of switchingCollector current as a function of switchingCollector current as a function of switchingCollector current as a function of switchingfrequencyfrequencyfrequencyfrequency(TÎù175°C, D=0.5, V†Š=600V, V•Š=15/0V,R•=14,6Â)
f, SWITCHING FREQUENCY [kHz]
I†, C
OLLE
CTO
R C
UR
RE
NT [A
]
1 10 100 10000
10
20
30
40
50
T†=80°
T†=110°
Figure 2.Figure 2.Figure 2.Figure 2. Forward bias safe operating areaForward bias safe operating areaForward bias safe operating areaForward bias safe operating area(D=0, T†=25°C, TÎù175°C; V•Š=15V)
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
I†, C
OLLE
CTO
R C
UR
RE
NT [A
]
1 10 100 10000.1
1
10
100
tÔ=1µs
20µs
50µs
200µs
1ms
10ms
DC
Figure 3.Figure 3.Figure 3.Figure 3. Power dissipation as a function of casePower dissipation as a function of casePower dissipation as a function of casePower dissipation as a function of casetemperaturetemperaturetemperaturetemperature(TÎù175°C)
T†, CASE TEMPERATURE [°C]
PÚÓÚ,
PO
WE
R D
ISS
IPA
TIO
N [W
]
25 50 75 100 125 150 1750
50
100
150
200
250
300
Figure 4.Figure 4.Figure 4.Figure 4. Collector current as a function of caseCollector current as a function of caseCollector current as a function of caseCollector current as a function of casetemperaturetemperaturetemperaturetemperature(V•Šú15V, TÎù175°C)
T†, CASE TEMPERATURE [°C]
I†, C
OLLE
CTO
R C
UR
RE
NT [A
]
25 50 75 100 125 150 1750
10
20
30
40
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IHY15N120R3IH-series
Rev. 2.1 2009-11-25
Figure 5.Figure 5.Figure 5.Figure 5. Typical output characteristicTypical output characteristicTypical output characteristicTypical output characteristic(TÎ=25°C)
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
I†, C
OLLE
CTO
R C
UR
RE
NT [A
]
0 1 2 30
15
30
45
V•Š=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6.Figure 6.Figure 6.Figure 6. Typical output characteristicTypical output characteristicTypical output characteristicTypical output characteristic(TÎ=175°C)
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
I†, C
OLLE
CTO
R C
UR
RE
NT [A
]
0 1 2 3 40
15
30
45
V•Š=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7.Figure 7.Figure 7.Figure 7. Typical transfer characteristicTypical transfer characteristicTypical transfer characteristicTypical transfer characteristic(V†Š=20V)
V•Š, GATE-EMITTER VOLTAGE [V]
I†, C
OLLE
CTO
R C
UR
RE
NT [A
]
2 4 6 8 10 120
15
30
45TÎ=25°CTÎ=175°C
Figure 8.Figure 8.Figure 8.Figure 8. Typical collector-emitter saturation voltageTypical collector-emitter saturation voltageTypical collector-emitter saturation voltageTypical collector-emitter saturation voltageas a function of junction temperatureas a function of junction temperatureas a function of junction temperatureas a function of junction temperature(V•Š=15V)
TÎ, JUNCTION TEMPERATURE [°C]
V†Š
ñÙÈÚò,
CO
LLE
CTO
R-E
MIT
TE
R S
ATU
RA
TIO
N [A
]
0 25 50 75 100 125 150 1751.0
1.5
2.0
2.5
3.0I†=7.5AI†=15AI†=30A
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IHY15N120R3IH-series
Rev. 2.1 2009-11-25
Figure 9.Figure 9.Figure 9.Figure 9. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofcollector currentcollector currentcollector currentcollector current(ind. load, TÎ=175°C, V†Š=600V,V•Š=15/0V, R•=14,6Â, test circuit in Fig.E)
I†, COLLECTOR CURRENT [A]
t, S
WIT
CH
ING
TIM
ES
[ns]
0 5 10 15 20 25 3010
100
1000tÁñÓËËòtË
Figure 10.Figure 10.Figure 10.Figure 10. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofgate resistorgate resistorgate resistorgate resistor(ind. load, TÎ=175°C, V†Š=600V,V•Š=15/0V, I†=15A, test circuit in Fig. E)
R•, GATE RESISTOR [Â]
t, S
WIT
CH
ING
TIM
ES
[ns]
10 20 30 40 5010
100
1000tÁñÓËËòtË
Figure 11.Figure 11.Figure 11.Figure 11. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofjunction temperaturejunction temperaturejunction temperaturejunction temperature(ind. load, V†Š=600V, V•Š=15/0V,I†=15A, R•=14,6Â, test circuit in Fig. E)
TÎ, JUNCTION TEMPERATURE [°C]
t, S
WIT
CH
ING
TIM
ES
[ns]
25 50 75 100 125 150 17510
100
1000tÁñÓËËòtË
Figure 12.Figure 12.Figure 12.Figure 12. Gate-emitter threshold voltage as aGate-emitter threshold voltage as aGate-emitter threshold voltage as aGate-emitter threshold voltage as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature(I†=0.4mA)
TÎ, JUNCTION TEMPERATURE [°C]
V•Šñ
ÚÌò,
GA
TE
-EM
ITTE
R T
HR
ES
HO
LD
VO
LTA
GE
[V
]
0 25 50 75 100 125 150 1752
3
4
5
6
7min.typ.max.
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IHY15N120R3IH-series
Rev. 2.1 2009-11-25
Figure 13.Figure 13.Figure 13.Figure 13. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of collector currentfunction of collector currentfunction of collector currentfunction of collector current(ind. load, TÎ=175°C, V†Š=600V,V•Š=15/0V, R•=14,6Â, test circuit in Fig.E)
I†, COLLECTOR CURRENT [A]
E, S
WIT
CH
ING
EN
ER
GY
LO
SS
ES
[m
J]
0 5 10 15 20 25 300.0
0.5
1.0
1.5
2.0
2.5EÓËË
Figure 14.Figure 14.Figure 14.Figure 14. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of gate resistorfunction of gate resistorfunction of gate resistorfunction of gate resistor(ind. load, TÎ=175°C, V†Š=600V,V•Š=15/0V, I†=15A, test circuit in Fig. E)
R•, GATE RESISTOR [Â]
E, S
WIT
CH
ING
EN
ER
GY
LO
SS
ES
[m
J]
10 20 30 40 501.0
1.1
1.2
1.3
1.4
1.5
1.6EÓËË
Figure 15.Figure 15.Figure 15.Figure 15. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature(ind load, V†Š=600V, V•Š=15/0V, I†=15A,R•=14,6Â, test circuit in Fig. E)
TÎ, JUNCTION TEMPERATURE [°C]
E, S
WIT
CH
ING
EN
ER
GY
LO
SS
ES
[m
J]
25 50 75 100 125 150 1750.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3EÓËË
Figure 16.Figure 16.Figure 16.Figure 16. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of collector emitter voltagefunction of collector emitter voltagefunction of collector emitter voltagefunction of collector emitter voltage(ind. load, TÎ=175°C, V•Š=15/0V, I†=15A,R•=14,6Â, test circuit in Fig. E)
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
E, S
WIT
CH
ING
EN
ER
GY
LO
SS
ES
[m
J]
400 500 600 700 800 900 10000.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0EÓËË
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IHY15N120R3IH-series
Rev. 2.1 2009-11-25
Figure 17.Figure 17.Figure 17.Figure 17. Typical turn off switching energy loss forTypical turn off switching energy loss forTypical turn off switching energy loss forTypical turn off switching energy loss forsoft switchingsoft switchingsoft switchingsoft switching(ind load, V†Š=600V, V•Š=15/0V, I†=15A,R•=14,6Â, test circuit in Fig. E)
dv/dt, VOLTAGE SLOPE [V/µs]
E, S
WIT
CH
ING
EN
ER
GY
LO
SS
ES
[m
J]
100 1000 1E+40.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4TÎ=25°CTÎ=175°C
Figure 18.Figure 18.Figure 18.Figure 18. Typical gate chargeTypical gate chargeTypical gate chargeTypical gate charge(I†=15A)
Q•Š, GATE CHARGE [nC]
V•Š,
GA
TE
-EM
ITTE
R V
OLTA
GE
[V
]
0 25 50 75 100 125 150 1750
2
4
6
8
10
12
14
16240V960V
Figure 19.Figure 19.Figure 19.Figure 19. Typical capacitance as a function ofTypical capacitance as a function ofTypical capacitance as a function ofTypical capacitance as a function ofcollector-emitter voltagecollector-emitter voltagecollector-emitter voltagecollector-emitter voltage(V•Š=0V, f=1MHz)
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
C, C
AP
AC
ITA
NC
E [pF]
0 10 20 3010
100
1000
CÍÙÙCÓÙÙCØÙÙ
Figure 20.Figure 20.Figure 20.Figure 20. IGBT transient thermal impedanceIGBT transient thermal impedanceIGBT transient thermal impedanceIGBT transient thermal impedance(D=tÔ/T)
tÔ, PULSE WIDTH [s]
ZÚÌœ†
, TR
AN
SIE
NT T
HE
RM
AL IM
PE
DA
NC
E [K
/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i: rÍ[K/W]: Í[s]:
1 4.6E-3 2.4E-5
2 0.1431 3.3E-4
3 0.2097 3.1E-3
4 0.2185 0.01636424
5 0.01204762 0.1753518
6 1.9E-3 1.713276
7 2.1E-4 4.662402 τ
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IHY15N120R3IH-series
Rev. 2.1 2009-11-25
Figure 21.Figure 21.Figure 21.Figure 21. Diode transient thermal impedance as aDiode transient thermal impedance as aDiode transient thermal impedance as aDiode transient thermal impedance as afunction of pulse widthfunction of pulse widthfunction of pulse widthfunction of pulse width(D=tÔ/T)
tÔ, PULSE WIDTH [s]
ZÚÌœ†
, TR
AN
SIE
NT T
HE
RM
AL IM
PE
DA
NC
E [K
/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i: rÍ[K/W]: Í[s]:
1 4.6E-3 2.4E-5
2 0.1431 3.3E-4
3 0.2097 3.1E-3
4 0.2185 0.01636424
5 0.012 0.1753518
6 1.9E-3 1.713276
7 2.1E-4 4.662402 τ
Figure 22.Figure 22.Figure 22.Figure 22. Typical diode forward current as aTypical diode forward current as aTypical diode forward current as aTypical diode forward current as afunction of forward voltagefunction of forward voltagefunction of forward voltagefunction of forward voltage
VŒ, FORWARD VOLTAGE [V]
IŒ, FO
RW
AR
D C
UR
RE
NT [A
]
0 1 2 30
15
30
45TÎ=25°CTÎ=175°C
Figure 23.Figure 23.Figure 23.Figure 23. Typical diode forward voltage as aTypical diode forward voltage as aTypical diode forward voltage as aTypical diode forward voltage as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature
TÎ, JUNCTION TEMPERATURE [°C]
VŒ,
FO
RW
AR
D V
OLTA
GE
[V
]
0 25 50 75 100 125 150 1751.0
1.5
2.0
2.5I†=7.5AI†=15AI†=30A
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IHY15N120R3IH-series
Rev. 2.1 2009-11-25
PG-TO247HC-3 (PG-TOHC-3)
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IHY15N120R3IH-series
Rev. 2.1 2009-11-25
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IHY15N120R3IH-series
Rev. 2.1 2009-11-25
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