TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due...

52

Transcript of TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due...

Page 1: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 2: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 3: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 4: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 5: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 6: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 7: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 8: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 9: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 10: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 11: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 12: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 13: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 14: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 15: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 16: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 17: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 18: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 19: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 20: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 21: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 22: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 23: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 24: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 25: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 26: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 27: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 28: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 29: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 30: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 31: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 32: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 33: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 34: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 35: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 36: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 37: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 38: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 39: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 40: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 41: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 42: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 43: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 44: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 45: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 46: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 47: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 48: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 49: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 50: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 51: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and
Page 52: TU Wien · 2011. 1. 31. · ide, degradation of the device, leakage effects on drain currents due to crystal defects, tunneling, impact ionization, interface charge formation and