TSV CHIP STACKING MEETS PRODUCTIVITY - SEMI.ORG Kostner TSV Chip... · tsv chip stacking meets...

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TSV CHIP STACKING MEETS PRODUCTIVITY EUROPEAN 3D TSV SUMMIT 22-23.1.2013 GRENOBLE HANNES KOSTNER DIRECTOR R&D BESI AUSTRIA

Transcript of TSV CHIP STACKING MEETS PRODUCTIVITY - SEMI.ORG Kostner TSV Chip... · tsv chip stacking meets...

Page 1: TSV CHIP STACKING MEETS PRODUCTIVITY - SEMI.ORG Kostner TSV Chip... · tsv chip stacking meets productivity european 3d tsv summit 22-23.1.2013 grenoble hannes kostner director r&d

TSV CHIP STACKING MEETS PRODUCTIVITY

EUROPEAN 3D TSV SUMMIT 22-23.1.2013 GRENOBLE

HANNES KOSTNER

DIRECTOR R&D BESI AUSTRIA

Page 2: TSV CHIP STACKING MEETS PRODUCTIVITY - SEMI.ORG Kostner TSV Chip... · tsv chip stacking meets productivity european 3d tsv summit 22-23.1.2013 grenoble hannes kostner director r&d

OVERVIEW

• Flip Chip Packaging Evolution

• The ‘Simple’ World of C4

• New Flip Chip Demands

• TCB Requirements for TSV Chip Stacking

• TCB Bonder Development

• Architectural considerations

• Innovation & Implementation

• Status and Outlook

• TCB Productivity

• Evaluations

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FLIP CHIP PACKAGING EVOLUTION THE ‘SIMPLE’ WORLD OF C4

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FLIP CHIP PACKAGING EVOLUTION NEW FLIP CHIP DEMANDS

ultra low-k wide I/O

low mechanical strength

MARKET DRIVERS

copper pillar & thin die

3D & fine pitch

integration density power consumption performance

Interconnect Technology

gradient bonding

Thermo Compression Bonding

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Applications

2D TC

3D TSV 2.5 & 3D

Panel

Strip

Singulated

(Boat)

Wafer

Side by Side

Stacked

2.5D TSV

TC

NCF

TC

CUF

TC

MUF

Technologies

TC

NCP

Upstream

Dispensing

Fluxing

C2S

C2C

C2W

Multi Chip

Inert

In-Situ

Dispensing

TC

The world of TC

FLIP CHIP PACKAGING EVOLUTION NEW FLIP CHIP DEMANDS

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Through Silicon Via‘s

Thin Die handling

Cu-Pillars & Stacking

2µm@10mm Co-Planarity

Fine Pitch

± 2µm Placement Accuracy

Insitu Soldering & Productivity Demands

200°C/s Heating & 100°C/s Cooling

I/O-Density & NCF

Bondforce ≤ 250N

FLIP CHIP PACKAGING EVOLUTION TCB REQUIREMENTS FOR TSV CHIP STACKING

Cu-Pillars & CUF

Bond Control

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Core Capability #1

Accuracy

Co-

Planarity

Core Capability #2

Bond

Control

Core Capability #3

TCB

TCB

3 TCB Core Capabilities

are essential for yield!

FLIP CHIP PACKAGING EVOLUTION TCB REQUIREMENTS FOR TSV CHIP STACKING

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TCB BONDER DEVELOPMENT ARCHITECTURAL CONSIDERATIONS

Rigid & Heavy Elastic & Lightweight

Accuracy Accurate Axis

Appropriate Alignment system

Thermal Drift Compensation

Accurate Axis

Appropriate Alignment system

Thermal Drift Compensation

Co-Planarity Rigid System Mechatronic Co-planarity

Control

Bond Control z-Stiffness Active z-Position Control

Productivity Limited by z-Stiffness & Weight

Fast Temp. Ramping

Lightweight Construction

Fast Temp. Ramping

Flexibility per footprint Architectural Limits Comparable to C4 FC Bonder

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Tilt due to elastic gantry deformation

Kinematic Restraint System

Mechatronics Solution

with

Coplanarity control

TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION – CO-PLANARITY CONTROL

Page 10: TSV CHIP STACKING MEETS PRODUCTIVITY - SEMI.ORG Kostner TSV Chip... · tsv chip stacking meets productivity european 3d tsv summit 22-23.1.2013 grenoble hannes kostner director r&d

TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION – 250N BONDHEAD

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Heater

Tool

Chip

Heater

Tool

Chip

Cooling fluid (e.g. air)

Active Gas cooling

TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION

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Cooling ramp: -90°/sec

TCB BONDER DEVELOPMENT INNOVATION & IMPLEMENTATION

0

50

100

150

200

250

300

350

400

450

0 5 10 15 20

Tem

pera

tur

[°c

]

Time [s]

Temp P2[°C]

Temp P3[°C]

Temp P4[°C]

Temp P5[°C]

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0 1 2 3 4 5 t [s]

Typical TC P&P cycle (TC process time: 4s)

6 7

Phase 1:

• Bond

(TC process)

Phase 2:

• Move to rel. adjust

• Rel. Adjust

• Move to Pick

• Wait

Phase 3:

• Pick

• Move to ULC

Phase 4:

• ULC

• Move to Bond

tool temperature

221 °C

260 °C

T [°C]

180 °C 160 °C

1 2 3 4

160 °C

max cooling:

-50 °C/s

max ramping:

+100 °C/s

5.6

REL ULC MOVE MOVE MOVE MOVE WAIT Bond (TC process)

PIC

K

*) without inspections

WAIT interval

can be used

for inspection

STATUS AND OUTLOOK TCB PRODUCTIVITY - ACTUAL

Page 14: TSV CHIP STACKING MEETS PRODUCTIVITY - SEMI.ORG Kostner TSV Chip... · tsv chip stacking meets productivity european 3d tsv summit 22-23.1.2013 grenoble hannes kostner director r&d

Phase 1:

• Bond

(TC process)

Phase 2:

• Move to rel. adjust

• Rel. Adjust

• Move to Pick

Phase 3:

• Pick

• Move to ULC

Phase 4:

• ULC

• Move to Bond

*) without

inspections

0 0.5 1 1.5 2 2.5 t [s]

tool temperature

221 °C

260 °C

T [°C]

160 °C

1 2 3 4

160 °C

max cooling:

-100 °C/s

max

ramping:

+200 °C/s

REL ULC MOVE MOVE Bond (TC process)

PIC

K

MOVE MOVE

2.5 s cyle time / b. head

based on +200/-100 °C/s

ramping

1400 UPH / bond head

Upside UPH: 2800 sprint UPH for machine

STATUS AND OUTLOOK TCB PRODUCTIVITY – UPSIDE POTENTIAL

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STATUS AND OUTLOOK EVALUATIONS

• 1st TC-Bonder Buyoff was very successful with first time dual head/single

pass assembly of Multi Layer TSV stacks @ 50µ die thickness

• 2nd Evaluation is ongoing

• In total we talk to 27 companies. All are decided to utilize TCB technology

sooner or later

12 OSATs

9 IDMs

2 Foundries

2 Fabless

2 Research Institutes

1 Material Supplier

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SUMMARY