Toggle and Torque: MRAM at EverspinTechnologies Mather, S...
20
Toggle and Torque: MRAM at Everspin Technologies Nick Rizzo F.B. Mancoff, R. Whig, K. Smith, K. Nagel, T. Andre, P.G. Mather, S. Aggarwal, J. M. Slaughter, D. Mitchell, S. Tehrani
Transcript of Toggle and Torque: MRAM at EverspinTechnologies Mather, S...
Toggle
an
d T
orq
ue:
MR
AM
at
Ever
spin
Tec
hn
olo
gie
s
Nic
k R
izzo
F.B
. M
anco
ff, R
. W
hig
, K
. S
mit
h, K
. N
agel
, T
. A
ndre
, P
.G.
Mat
her
, S
. A
ggar
wal
, J.
M. S
laughte
r, D
. M
itch
ell,
S. T
ehra
ni
Eve
rSp
in™
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d t
he
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rSp
inlo
go
are
tra
de
ma
rks
of
Eve
rSp
inT
ech
no
log
ies,
In
c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
am
es
are
th
e p
rop
ert
y o
f th
eir
re
spe
ctiv
e o
wn
ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
T
he
lea
din
g d
evel
op
er a
nd
ma
nu
fact
ure
r o
f in
tegra
ted
m
ag
net
ic p
rod
uct
s.
In
du
stry
-fir
st M
RA
M m
anu
fact
ure
r si
nce
Ju
ne
200
6
E
mb
edd
ed M
RA
M s
yst
ems:
1st
SO
C i
nto
pro
du
ctio
n i
n 2
010
In
teg
rate
d m
agn
etic
sen
sors
: 1
stin
teg
rate
d s
yst
em i
n 2
01
0
F
orm
ed a
s E
ver
spin
in J
un
e 2
008
–P
rev
iou
sly
pa
rt o
f F
rees
cale
Sem
ico
nd
uct
or
E
xp
an
ded
po
rtfo
lio
to
50
pro
du
cts
curr
entl
y
F
ocu
s o
n i
nno
vat
ion
, q
ual
ity
, co
st,
reli
abil
ity
, m
anu
fact
ura
bil
ity
Ev
ersp
inin
tro
du
ctio
n
Eve
rSp
in™
an
d t
he
Eve
rSp
inlo
go
are
tra
de
ma
rks
of
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rSp
inT
ech
no
log
ies,
In
c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
am
es
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e p
rop
ert
y o
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ctiv
e o
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ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
Cu
rren
t M
RA
M p
ort
foli
o
48-B
GA
•x8
Asynchro
nou
s p
ara
llel I/O
•x16
Asynchro
no
us p
ara
llel I/O
44-T
SO
PII
•x8
Asynchro
nou
s p
ara
llel I/O
•x16
Asynchro
no
us p
ara
llel I/O
8-D
FN
–S
PI-
com
patible
serial I/O
–40 M
Hz; N
o w
rite
dela
y
16-b
it I/O
Part
Num
ber
Density
Configura
tion
MR
4A
16
B16
Mb
1M
X1
6
MR
2A
16
A4
Mb
25
6K
x1
6
MR
1A
16
A2
Mb
12
8K
x1
6
MR
0A
16
A1
Mb
64
Kx16
8-b
it I/O
Part
Num
ber
Density
Configura
tion
MR
2A
08
A4
Mb
51
2K
x8
MR
0A
08
B1
Mb
12
8K
x8
MR
256A
08
B25
6K
b32
kX
8
SP
I I/O
Part
Num
ber
Density
Configura
tion
MR
25H
10
1M
b12
8K
x8
MR
25H
512
51
2K
b64
Kx8
MR
25H
256
25
6K
b32
Kx8
16-b
it I/O
Part
Num
ber
Density
Configura
tion
MR
4A
16
B16
Mb
1M
X1
6
MR
2A
16
A4
Mb
25
6K
x1
6
MR
1A
16
A2
Mb
12
8K
x1
6
MR
0A
16
A1
Mb
64
Kx16
8-b
it I/O
Part
Num
ber
Density
Configura
tion
MR
2A
08
A4
Mb
51
2K
x8
MR
0A
08
B1
Mb
12
8K
x8
MR
256A
08
B25
6K
b32
kX
8
SP
I I/O
Part
Num
ber
Density
Configura
tion
MR
25H
10
1M
b12
8K
x8
MR
25H
512
51
2K
b64
Kx8
MR
25H
256
25
6K
b32
Kx8
Eve
rSp
in™
an
d t
he
Eve
rSp
inlo
go
are
tra
de
ma
rks
of
Eve
rSp
inT
ech
no
log
ies,
In
c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
am
es
are
th
e p
rop
ert
y o
f th
eir
re
spe
ctiv
e o
wn
ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
•2009:
Red
Her
ring A
war
d:
Top 1
00 m
ost
pro
mis
ing
tec
h c
om
pan
ies
•2008:
Busi
nes
s W
eek “
Most
Succ
essf
ul
Sta
rtups”
•2008:
Forb
es/W
olf
e E
mer
gin
g T
ech R
eport
s –
“com
pan
ies
to w
atch
”
•2007:
Des
ign N
ews
Gold
en M
ouse
trap
Aw
ard
•2007:
R&
D M
agaz
ine
-T
op 1
00 I
nven
tions
of
2007
•2007:
EE
Tim
es C
hin
a A
ce A
war
d -
Bes
t P
roduct
of
the
Yea
r –
Mem
ory
•2007:
Japan
Em
bed
ded
Syst
ems
Expo -
Mem
ory
of
Yea
r
•2007:
In-S
tat’
s In
novat
ion A
war
d
•2006:
Nam
ed P
roduct
of
the
Yea
r by E
lect
ronic
Pro
duct
s
•2004:
MIT
Tec
hnolo
gy R
evie
w-
MR
AM
“T
oggle
”is
one
of
5 K
ille
r 2003 P
aten
ts
Ev
ersp
inM
RA
M R
eco
gn
ized
as
Ind
ust
ry
Bre
ak
thro
ug
h P
rod
uct
Most
Su
ccess
ful
US
Sta
rtu
ps
Eve
rSp
in™
an
d t
he
Eve
rSp
inlo
go
are
tra
de
ma
rks
of
Eve
rSp
inT
ech
no
log
ies,
In
c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
am
es
are
th
e p
rop
ert
y o
f th
eir
re
spe
ctiv
e o
wn
ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
Ev
ersp
inA
pp
lica
tio
ns,
Cu
sto
mer
s
Valu
e d
iffe
ren
tiati
on
No
n-v
ola
tile
Fa
st r
ead
an
d w
rite
Un
lim
ited
en
du
ran
ce
Hig
hly
rel
iab
le
Log
os,
tra
dem
ark
s, i
mag
es a
nd
cop
yri
gh
t re
fere
nce
s ar
e th
e p
rop
erty
of
the
resp
ecti
ve
com
pan
ies
note
d.
Eve
rSp
in™
an
d t
he
Eve
rSp
inlo
go
are
tra
de
ma
rks
of
Eve
rSp
inT
ech
no
log
ies,
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c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
am
es
are
th
e p
rop
ert
y o
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eir
re
spe
ctiv
e o
wn
ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
Mem
ory
Co
mp
ari
son
To
ggle
MR
AM
(18
0 n
m)
To
ggle
MR
AM
(65
nm
)*
ST
MR
AM
(65
nm
)*
FL
AS
H
(65
nm
)+
DR
AM
(65
nm
)+
SR
AM
(65
nm
)+
cell
siz
e (µ µµµ
m2)
1.2
50
.16
0.0
4†
0.0
40
.03
0.3
Rea
d t
ime
35
ns
10
ns
10
ns
10
-50
ns
10
ns
1 n
s
Pro
gra
m t
ime
5 n
s5
ns
10
ns
0.1
-100
ms
10
ns
1 n
s
Pro
gra
m
ener
gy
/bit
150
pJ
100
pJ
1 p
J1
0 n
J5
pJ
Nee
ds
refr
esh
5 p
J
En
du
ran
ce>
10
15
> 1
015
>10
15
> 1
015
rea
d,
> 1
05
wri
te>
10
15
> 1
015
No
n-v
ola
tili
tyY
ES
YE
SY
ES
YE
SN
ON
O
* 6
5n
m M
RA
M v
alu
es a
re
pro
jecte
d
+ T
hes
e valu
es a
re
fro
m t
he
ITR
S r
oad
map
†T
his
cel
l si
ze
on
ly c
on
sid
ers
bit
are
a a
nd
ign
ores
CM
OS
lim
itati
on
s
Toggle
MR
AM
Eve
rSp
in™
an
d t
he
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rSp
inlo
go
are
tra
de
ma
rks
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rSp
inT
ech
no
log
ies,
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c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
am
es
are
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e p
rop
ert
y o
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re
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ctiv
e o
wn
ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.•Sen
se p
ath e
lect
rica
lly i
sola
ted
fro
m p
rogra
m p
ath
ON
for
sensi
ng,
OF
F f
or
pro
gra
mm
ing
I RefI s
ense
Wri
te L
ine
1
Wri
te L
ine
2I
I
Bo
tto
m
Ele
ctro
de
To
p
Ele
ctro
de
Mag
net
ic T
unnel
Junct
ion
To
gg
le M
RA
M B
it C
ell
H
H
Eve
rSp
in™
an
d t
he
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rSp
inlo
go
are
tra
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ma
rks
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rSp
inT
ech
no
log
ies,
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c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
am
es
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e p
rop
ert
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re
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ctiv
e o
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ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
To
gg
le s
wit
chin
g f
or
ba
lan
ced
SA
F
H>Hsw
M1
M2
AF
coupli
ng
M1
= M
2
H>Hsat
H<Hsw
•Low
er E
ner
gy t
o “
flop”
and s
ciss
or
•Fie
ld e
xce
eds
SA
F s
tren
gth
Eve
rSp
in™
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go
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rSp
inT
ech
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ies,
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c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
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es
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e p
rop
ert
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re
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ctiv
e o
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ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
Wri
te
Lin
e 2
Wri
te
Lin
e 1
Wri
te L
ine
1
Wri
te L
ine
2
t 0t 1
t 2t 3
t 4
H
To
gg
le M
RA
M S
wit
chin
g S
eq
uen
ce
I
00
IH
I
H
I
•Ph
ased
curr
ent
pu
lses
pro
du
ce r
ota
ting
fie
ld
•To
gg
le –
sam
e fi
eld
seq
uen
ce a
lway
s ch
ang
es s
tate
of
bit
Eve
rSp
in™
an
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he
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go
are
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rks
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rSp
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ech
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ies,
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ll
oth
er
pro
du
ct o
r se
rvic
e n
am
es
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e p
rop
ert
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ctiv
e o
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ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
0
80
160
240
320
400
480
560
060
120
180
240
300
360
420
480
540
600
H<
Hsw
: D
oes
n’t
Sw
itch
Hsw
<H
<H
sat:
Sw
itch
es
H>
Hsa
t: D
oes
n’t
sw
itch
H1 (
Oe)
H2 (Oe)
To
gg
le b
it s
wit
chin
g
•Thre
shold
pro
gra
mm
ing e
nsu
res
hig
h r
elia
bil
ity
Th
eore
tica
l si
mu
lati
on
of
Toggle
sw
itch
ing
Op
era
ting
Reg
ion
T =
125 º
C
Non-S
witch
ing
Regio
n
Bit L
ine
Curr
en
t
Digit Line Current
Op
era
ting
Reg
ion
T =
125 º
C
Non-S
witch
ing
Regio
n
Bit L
ine
Curr
en
t
Digit Line Current4M
hig
h s
pee
d m
emory
tes
t
0 e
rrors
Sp
in T
orq
ue
MR
AM
Eve
rSp
in™
an
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rSp
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go
are
tra
de
ma
rks
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rSp
inT
ech
no
log
ies,
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c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
am
es
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e p
rop
ert
y o
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re
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ctiv
e o
wn
ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
Mv
iaL
ow
er
Ele
ctro
de
Dig
it L
ine
Bit
lin
e
I
Toggle
MR
AM
Cell
siz
e ≈
1 µ
m2
CM
OS
0.1
8µ
m
I
Com
pari
son
of
0.1
8 µ µµµ
m T
oggle
MR
AM
an
d 6
5n
m S
T-M
RA
M
To
gg
le
bit
ST
bit
ST
-MR
AM
Cel
l si
ze ≈
0.0
4 µ
m2
CM
OS
65n
m
I ≈
100 µ µµµ
A
Toggle
MR
AM
:
•lik
ely
more
rel
iable
•in p
roduct
ion
ST
-MR
AM
has potential to be:
•hig
her
den
sity
–(i
f J c
can b
e
reduce
d t
o u
tili
ze m
inim
um
pas
s
XT
OR
)
•low
er w
rite
pow
er
Bit
lin
e
Mvia
Dig
it
Lin
e
Mag
net
ic
Cla
ddin
g
Top V
iew
Sid
e V
iew
Rea
d X
tor
Eve
rSp
in™
an
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go
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rks
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rSp
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ech
no
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ies,
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c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
am
es
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e p
rop
ert
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ctiv
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ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
-0.8
-0.4
0.0
0.4
0.8
1.2
50
0
55
0
60
0
65
0
70
0
75
0
80
0
85
0
90
0
010
20
30
40
50
60
70
Resistance (ohms)
DC
curr
ent
(mA
)
MR (%)
-0.8
-0.4
0.0
0.4
0.8
1.2
50
0
55
0
60
0
65
0
70
0
75
0
80
0
85
0
90
0
010
20
30
40
50
60
70
Resistance (ohms)
DC
curr
ent
(mA
)
MR (%)
•Use
sp
in m
om
entu
m f
rom
curr
ent
to c
han
ge
dir
ecti
on o
f S
, m
.
m∆
SN
et c
han
ge
inh
=S
per
e−
Fix
ed
Lay
er
Tu
nn
el
Bar
rier
Fre
e
layer
Torque
tS=
∆∆
Rem
anen
tlo
op
: 1
00
ms I-
pu
lse
TMR (%)
0.1
2 µ
m x
0.1
9 µ
m
CF
B F
ree
layer
on
Mg
O
100
nm
Jc
~ 1
06-1
07
A/c
m2
Sp
in T
orq
ue
Pro
gra
mm
ing f
or
Hig
h D
ensi
ty,
Lo
w P
ow
er M
RA
M
•Opti
cal
pat
tern
ing o
f
0.1
um
bit
s
Eve
rSp
in™
an
d t
he
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rSp
inlo
go
are
tra
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ma
rks
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rSp
inT
ech
no
log
ies,
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c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
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es
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e p
rop
ert
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ctiv
e o
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.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
•Lo
wer
th
e R
A u
nti
l m
inim
um
Ch
all
enge
of
ST
-MR
AM
:
Red
uce
cri
tica
l cu
rren
t d
ensi
ty Jc
I Pas
s
tran
sist
or
MT
J
Vsw
∝RAVbd
∝lo
g(RA
)
⇒
00.5
11.5
0
0.2
0.4
0.6
0.81
Vap
pli
ed
Sw
itch
ing
Dis
trib
uti
on
Bre
akdow
n
Dis
trib
uti
on
Vsw
Vbd
Nee
d >
12
σse
par
atio
n
•Isat≈
500
µ µµµA/µ µµµ
m g
ate
wid
th
for
Si
XT
OR
•Low
Jc
⇒sm
all
pas
s X
tor
•Low
Jc
⇒no t
unnel
bar
rier
bre
akdow
n
For h
igh
den
sity
:F
or h
igh
reli
ab
ilit
y:
Eve
rSp
in™
an
d t
he
Eve
rSp
inlo
go
are
tra
de
ma
rks
of
Eve
rSp
inT
ech
no
log
ies,
In
c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
am
es
are
th
e p
rop
ert
y o
f th
eir
re
spe
ctiv
e o
wn
ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
0.4
0.6
0.81
1.2
1.4
1.6
1.8
1.0
10
.01
00
.010
00
.0
Bre
ak
dow
n v
olt
age
(Vbd)
vs.
RA
com
pari
son
Vbd
(V)
RA
(Ω µ
m2)Oper
atin
g
Ran
ge
for
ST
-MR
AM
•quas
ista
ticVbd
•bit
siz
e ≈
0.1
x0.2
µm
2
•Vbd
dec
reas
es a
ppro
x. lo
gar
ithm
ical
ly a
s R
A d
ecre
ases
.
Eve
rSp
in™
an
d t
he
Eve
rSp
inlo
go
are
tra
de
ma
rks
of
Eve
rSp
inT
ech
no
log
ies,
In
c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
am
es
are
th
e p
rop
ert
y o
f th
eir
re
spe
ctiv
e o
wn
ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
To
red
uce
Jc
for
spin
to
rqu
e sw
itch
ing
()
()(
)s
ks
cM
Ht
Me
Jπ
εα
21
2+
≈h
I
Sp
in t
orq
ue
Hig
her
eff
icie
ncy
ε
Hig
her
MR
Low
dam
pin
g (
α)
free
lay
er
Per
pen
dic
ula
r Hk
in f
ree
lay
er
Low
Ms
and/o
r
thin
ner
fre
e la
yer
(Eb
∝ ∝∝∝MsV
)
•Nee
d c
om
bin
atio
n o
f good p
roper
ties
for
low
Jc
TkE b
b
e0τ
τ=
Tim
e t
o d
ata
loss
Eve
rSp
in™
an
d t
he
Eve
rSp
inlo
go
are
tra
de
ma
rks
of
Eve
rSp
inT
ech
no
log
ies,
In
c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
am
es
are
th
e p
rop
ert
y o
f th
eir
re
spe
ctiv
e o
wn
ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
ST
Sw
itch
ing a
nd
bre
ak
do
wn
fro
m
16k
b C
MO
S a
rrays
05
00
10
00
15
00
20
00
0
0.51
V(m
V)
Pro
ba
bil
ity
Bit
s
swit
ch
ed
Break
dow
n
•Pu
lse d
urati
on
tp
= 1
00n
s
•Bit
siz
e:
0.1
µ µµµm
x 0
.18
µ µµµm
Sep
ara
tio
n>
20
σ σσσ
0200
400
600
800
110
3×
0
50
100
150
Frequency
Bit
res
ista
nce
(Ω
)
His
togram
of
several
hu
nd
red
bit
s in
low
R s
tate
sw
itch
ed
1000 t
imes
Bef
ore
puls
es
Aft
er
1000 p
uls
es
(50 n
s dura
tion)
•Good
sep
arati
on
> 1
2σ σσσ
, b
ut
nee
d t
o e
val.
larger
nu
mb
er o
f b
its,
more
cycle
s
•Vo
ltag
e in
clu
des
pa
ss t
ran
sist
or
Eve
rSp
in™
an
d t
he
Eve
rSp
inlo
go
are
tra
de
ma
rks
of
Eve
rSp
inT
ech
no
log
ies,
In
c. A
ll
oth
er
pro
du
ct o
r se
rvic
e n
am
es
are
th
e p
rop
ert
y o
f th
eir
re
spe
ctiv
e o
wn
ers
.
©E
ve
rSp
inT
ech
no
log
ies
20
09
.
T
oggle
MR
AM
in p
roduct
ion (
since
2006)
and i
s a
hig
hly
rel
iable
,
fast
, nonvola
tile
mem
ory
.
S
T-M
RA
M h
as p
ote
nti
al f
or
hig
her
den
sity
, lo
wer
pow
er i
f I sw
can
be
furt
her
red
uce
d.
•Fro
m s
wit
chin
g k
ilobit
CM
OS
arr
ays
at tp
= 1
00ns:
<I sw>
≈0.5
mA
, <Eb/kbT
> ≈
75
<σsw
> ≈
4%
, <
σbd>
≈3%
Sep
arat
ion >
12σ
Su
mm
ary
