Tinh Dien Tro Suat
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Transcript of Tinh Dien Tro Suat
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Resistivity is the property of a material thatdetermines the electrical resistance of a specificsample.
The block of material has resistance (R) andresistivity ().
remains constant regardless of size or shape.
Resistivity
l
h
w
4
4
R= l
w h=
l
A
Resistivity
Calculate resistance between front and back faces :
Ais the area through which the current must passand can be used where the cross-section is notrectangular, e.g. for a wire with circular cross-section.
If length increases, resistance increases and viceversa. Opposite for area.
The S.I. unit of resistivity is the m, but thepractical unit is the cm.
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Sheet resistance
In IC technology we often have conducting layerswith constant depth (hin figure).
Resistance therefore depends upon the aspect ratioas viewed from the surface (l/w).
Define sheet resistance (Rs) so that resistance is:
R=Rs
l
w
Rsis given in /square where l = w.
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The relation between and Rsis:
But since l = w:
Using sheet resistance, define resistance of an area(e.g. in a silicon IC) by number of squares.
R =
Rs
4
Sheet Resistance
R= 4 Rs
Rs
l
w
= l
wh
=Rs h
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Example 1
An aluminium rod 30cm long with a cross-section of0.5cm x 0.25cm has a voltage of 100mV applied acrossit and a current of 13.9A is observed to flow. Calculatethe resistivity, , of the aluminium.
R= V/I= 0.1/13.9A = 7.2 x 10-4
R= l/whor = Rwh/lso = 7.2 x 10-4x 0.005 x 0.0025/0.3 = 3 x 10-8m.
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0.8m
2m
Example 2
An area of undoped (high resistivity) silicon containsa region of doped silicon (so much lower resitivity) forfabricating a 20 kresistor, as shown in the figure. Ifthe resistivity, , of the doped silicon is 10-3m,calculate the sheet resistance,R
s, the number of
squares of doped silicon required for the resistor, andhence the length of the resistor.
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Example 2 Solution
We can assume that the doped silicon is a conducting areasurrounded by insulator.
Rs= /h= 10-3/0.8 x 10-6= 1.25 x 103/square = 1.25k/square.
No of squares = aspect ratio l/wsince all squares must havesides of length w(in this case 2m). R= R
sl/wor l/w= R/R
s.
No of squares = Value of resistor/Rs
= 20k/1.25k = 16 squares. Length of resistor = No of squares x length of side of a square
=16 x 2m = 32m.
Alternatively to find the length:
R= Rsl/wor l= Rw/R
s= 20 x 103x 2 x 10-6/1.25 x 103= 32m.
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Range of Resistivity Values
Values cover 30 orders of magnitude!
Log Scale
22
20
12
10
2
0
-8
-10 m
cm
3.103m
Intrinsic Si
3.10-8m
Aluminium
Doped Si Insulators
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Electric Field
The gradient of thepotential.
The electric field, Ebetween two pointsdistance lapart withpotential difference Vis:
Ehas units of V m-1.
Also
Conductivity and Electric Field
Conductivity
The conductivity is thereciprocal of resistivity, i.e.the conductivity is givenby:
The S.I. unit is obviously -1 m-1, but the unit ofconductance (-1 ) is theSiemen (S), so conductivityactually has unit S m-1.
=1
E =
V
l
E=
dV
dx
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Current Density
The current density isthe current per unitarea.
IfIis the total currentflowing through anareaA, the currentdensity Jis:
Jhas units of A m-2.
J = IA
Divide electric field bycurrent density to get:
This is just a slightlydifferent form ofOhms Law.
E
J=
Vl
IA
= RA
l=
i.e. EJ=
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Electric Current
Current is a flow of charge.
We can measure current by measuring the chargethat flows by in unit time (I = Q/t).
Current is carried by charged particles (carriers)each carrying a known charge.
Current is therefore determined by three factors:
The amount of charge on each carrier. The number of charge carriers in unit volume(known as the carrier concentration or density).
The velocity of the charge carriers.
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Carrier Concentration
Electric current carried by charged particles(positive or negative).
Called carrier concentration nor p(dependingwhether the charge is negative or positive).
S.I. unit for nand pis carriers/m3(or simplym-3).
Practical unit used is cm-3
rather than the m-3
.
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Carrier Concentration
Each carrier has charge.
Negative charge carriers are electrons andcharge is electronic charge (q= 1.602 x 10-19C) .
Positive charge carriers have positive charge ofsame amount.
Sometimes charge carriers have multiples of q,
but not in normal conduction, and we will notconsider these more unusual situations.
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Mobility
Another important factor contributing to current.
Carrier mobility ().
Carriers accelerated by electric field, butdecelerated again by collisions with atoms.
Leads to a mean carrier velocity, , per appliedelectric field.
=
velocity
electricfield=
v
E
Units are m2v-1s-1. Practical unit is cm2v-1s-1.
v
The formula for mobility is: