Tinh Dien Tro Suat

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    Resistivity is the property of a material thatdetermines the electrical resistance of a specificsample.

    The block of material has resistance (R) andresistivity ().

    remains constant regardless of size or shape.

    Resistivity

    l

    h

    w

    4

    4

    R= l

    w h=

    l

    A

    Resistivity

    Calculate resistance between front and back faces :

    Ais the area through which the current must passand can be used where the cross-section is notrectangular, e.g. for a wire with circular cross-section.

    If length increases, resistance increases and viceversa. Opposite for area.

    The S.I. unit of resistivity is the m, but thepractical unit is the cm.

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    Sheet resistance

    In IC technology we often have conducting layerswith constant depth (hin figure).

    Resistance therefore depends upon the aspect ratioas viewed from the surface (l/w).

    Define sheet resistance (Rs) so that resistance is:

    R=Rs

    l

    w

    Rsis given in /square where l = w.

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    The relation between and Rsis:

    But since l = w:

    Using sheet resistance, define resistance of an area(e.g. in a silicon IC) by number of squares.

    R =

    Rs

    4

    Sheet Resistance

    R= 4 Rs

    Rs

    l

    w

    = l

    wh

    =Rs h

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    Example 1

    An aluminium rod 30cm long with a cross-section of0.5cm x 0.25cm has a voltage of 100mV applied acrossit and a current of 13.9A is observed to flow. Calculatethe resistivity, , of the aluminium.

    R= V/I= 0.1/13.9A = 7.2 x 10-4

    R= l/whor = Rwh/lso = 7.2 x 10-4x 0.005 x 0.0025/0.3 = 3 x 10-8m.

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    0.8m

    2m

    Example 2

    An area of undoped (high resistivity) silicon containsa region of doped silicon (so much lower resitivity) forfabricating a 20 kresistor, as shown in the figure. Ifthe resistivity, , of the doped silicon is 10-3m,calculate the sheet resistance,R

    s, the number of

    squares of doped silicon required for the resistor, andhence the length of the resistor.

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    Example 2 Solution

    We can assume that the doped silicon is a conducting areasurrounded by insulator.

    Rs= /h= 10-3/0.8 x 10-6= 1.25 x 103/square = 1.25k/square.

    No of squares = aspect ratio l/wsince all squares must havesides of length w(in this case 2m). R= R

    sl/wor l/w= R/R

    s.

    No of squares = Value of resistor/Rs

    = 20k/1.25k = 16 squares. Length of resistor = No of squares x length of side of a square

    =16 x 2m = 32m.

    Alternatively to find the length:

    R= Rsl/wor l= Rw/R

    s= 20 x 103x 2 x 10-6/1.25 x 103= 32m.

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    Range of Resistivity Values

    Values cover 30 orders of magnitude!

    Log Scale

    22

    20

    12

    10

    2

    0

    -8

    -10 m

    cm

    3.103m

    Intrinsic Si

    3.10-8m

    Aluminium

    Doped Si Insulators

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    Electric Field

    The gradient of thepotential.

    The electric field, Ebetween two pointsdistance lapart withpotential difference Vis:

    Ehas units of V m-1.

    Also

    Conductivity and Electric Field

    Conductivity

    The conductivity is thereciprocal of resistivity, i.e.the conductivity is givenby:

    The S.I. unit is obviously -1 m-1, but the unit ofconductance (-1 ) is theSiemen (S), so conductivityactually has unit S m-1.

    =1

    E =

    V

    l

    E=

    dV

    dx

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    Current Density

    The current density isthe current per unitarea.

    IfIis the total currentflowing through anareaA, the currentdensity Jis:

    Jhas units of A m-2.

    J = IA

    Divide electric field bycurrent density to get:

    This is just a slightlydifferent form ofOhms Law.

    E

    J=

    Vl

    IA

    = RA

    l=

    i.e. EJ=

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    Electric Current

    Current is a flow of charge.

    We can measure current by measuring the chargethat flows by in unit time (I = Q/t).

    Current is carried by charged particles (carriers)each carrying a known charge.

    Current is therefore determined by three factors:

    The amount of charge on each carrier. The number of charge carriers in unit volume(known as the carrier concentration or density).

    The velocity of the charge carriers.

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    Carrier Concentration

    Electric current carried by charged particles(positive or negative).

    Called carrier concentration nor p(dependingwhether the charge is negative or positive).

    S.I. unit for nand pis carriers/m3(or simplym-3).

    Practical unit used is cm-3

    rather than the m-3

    .

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    Carrier Concentration

    Each carrier has charge.

    Negative charge carriers are electrons andcharge is electronic charge (q= 1.602 x 10-19C) .

    Positive charge carriers have positive charge ofsame amount.

    Sometimes charge carriers have multiples of q,

    but not in normal conduction, and we will notconsider these more unusual situations.

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    Mobility

    Another important factor contributing to current.

    Carrier mobility ().

    Carriers accelerated by electric field, butdecelerated again by collisions with atoms.

    Leads to a mean carrier velocity, , per appliedelectric field.

    =

    velocity

    electricfield=

    v

    E

    Units are m2v-1s-1. Practical unit is cm2v-1s-1.

    v

    The formula for mobility is: